InN材料及器件的最新研究进展

InN材料是性能优良的Ⅲ-Ⅴ族氮化物半导体材料,在光电子领域有着非常重要的应用价值,由此成为最近国际国内研究的热点.就InN材料的制备方法、p型掺杂、电学特性、光学特性、器件的研究应用以及国内研究的最新进展进行了综述.     

氨热法生长大GaN晶体展望

宽带隙Ⅲ族氮化物（AIN,GaN和InN）器件工艺进展比其大尺寸体单晶材料生长快得多。由于缺乏热和晶格匹配衬底,影响了低成本、低缺陷（低损耗）器件的生产。一个有希望的批量生产大尺寸Ⅲ族氮化物单晶的方法是高压条件下利用超临界氨的氨热技术。已用水热法生长出直径3英寸（0001）ZnO晶体。最近,首次用氨热法生长出直径1英寸（0001）GaN晶体。     

氧化亚锡薄膜晶体管的研究进展EI北大核心CSCD

p型金属氧化物材料氧化亚锡由于其特有的光学和电学性能,使得其在催化、传感、光电器件等领域受到越来越多人的青睐。本文重点介绍了氧化亚锡在薄膜晶体管中的研究应用,薄膜晶体管作为显示器驱动面板核心部件,其在显示器中的作用至关重要。本文归纳了氧化亚锡薄膜晶体管的研究进展,对氧化亚锡微观性能分析、氧化亚锡薄膜材料制备以及晶体管制备方法等进行介绍。通过对氧化亚锡晶体结构以及电子结构进行详细介绍,探讨了氧化亚锡性能微观调控机制;并通过对氧化亚锡材料的制备以及器件的应用研究,分析了氧化亚锡薄膜晶体管所面临的器件电流开关比低的问题并展望其在互补金属氧化物半导体器件方向的前景,以期为制备稳定和环保的p型金属氧化物薄膜晶体管提供参考。     

二维MXenes材料在柔性光电探测器中的应用展望

二维过渡金属碳/氮化物(MXenes)自2011年被首次报道以来,凭借其特殊的二维层状结构、优异的导电性和电化学性能在能源、催化、传感、电磁屏蔽和微波吸收等领域吸引了极大关注。近几年,随着对该材料认识的不断加深,其在光电领域的研究也不断深入。与其它领域不同,光电器件聚焦于延伸MXenes材料半导体性质,通过设计表面官能团、精准控制层数等来打开材料带隙,从而使其从金属性质转变为半导体性质。本文主要围绕MXenes材料的光电性质,介绍其在柔性光电子器件中的应用,系统阐述MXenes材料在透明电子器件、光电探测器、图像传感器、光电晶体管、人工神经视觉网络系统的应用前沿现状与趋势,并展望了MXenes基柔性光电器件面临的挑战以及未来发展前景。     

Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展

简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程。以II-VI族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响。以此为基础,综述了II-VI族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了II-VI族化合物半导体量子结构材料与器件的发展趋势。     

ZnO薄膜V族掺杂的研究进展

ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键.概述了ZnO薄膜V族元素氮、磷、砷(N、P、As)p型掺杂的研究进展,分析对比了3种元素的掺杂和p型转变特性,简单介绍了共掺杂技术,提出了有待进一步研究的问题.     

p型ZnO掺杂及其发光器件研究进展与展望

ZnO是一种新型的Ⅱ-Ⅵ族宽带隙半导体,具有很多优异的的光电性能.但一般制备出的ZnO薄膜材料均是n型,很难实现p型的掺杂.ZnO的p型掺杂是实现其光电器件应用的关键技术,也是目前ZnO研究的关键课题.目前在p型ZnO的掺杂理论和实验方面都有很大的进展,对此进行了详细的分析与论述,并且展望了p型ZnO薄膜制备的前景.     

Ⅱ-Ⅵ族化合物半导体量子结构材料和器件的研究与发展

简要介绍了量子结构材料与器件中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程.以Ⅱ-Ⅵ族化合物半导体为例,介绍了量子尺寸效应对于激子束缚能的影响.以此为基础,综述了Ⅱ-Ⅵ族化合物半导体量子阱、量子点等量子结构材料以及量子结构器件在光电探测、发光器件与太阳能电池领域的研究现状,并总结了Ⅱ-Ⅵ族化合物半导...     

铜铁矿基p-TSO材料的化学合成及其光电器件研究

铜铁矿基三元氧化物CuMO_2是p型的宽禁带半导体材料,具有紫外截止、可见光区和近红外光区高度透明的光学特性和良好的电学性能。主要综述了CuMO_2铜铁矿基材料近年来报道较多的溶胶-凝胶、水热合成、静电纺丝以及聚合物辅助沉积4种化学制备方法及其当前的研究现状,详细介绍了CuMO_2铜铁矿基的紫外光电探测器、钙钛矿太阳能电池以及薄膜晶体管等光电器件的制备和性能研究。这些研究表明,CuMO_2三元氧化物极有望应用于低成本、高效益、稳定性好的光电器件和p型薄膜晶体管中,其性能研究及其器件探索拥有较大的研究潜力。然而现阶段其薄膜制备的合成温度偏高,低维铜铁矿材料的电学性能有待进一步提升。因此,铜铁矿基光电器件的研发与应用是一项挑战与机遇并存的工作。     

AlInN光电薄膜的研究进展

AlInN三元合金是优良的Ⅲ-Ⅴ族氮化物半导体材料,具有优良的光学和电学性能,在光电子器件应用方面具有广阔的应用前景.详细评述了近年来AlInN薄膜材料在生长技术、晶体结构、表面形貌、热学特性、光电特性等方面的研究,为AlInN三元合金在光电方面的基础和应用研究提供了重要参考.     

Recent progress in transparent oxide semiconductors: Materials and device application

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(β-Ga₂O₃), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO₂F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al₂O₃. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.     

ZnO的点缺陷结构与p型化转变的研究进展

ZnO是一种典型的直带隙宽禁带半导体材料,是下一代光电材料的代表.但由于P型化转变困难,使ZnO在光电领域的应用受到了极大限制.系统分析了ZnO的本征点缺陷结构和P型化转变方面的理论和实验研究成果,认为ZnO的n型电导应起源于本征点缺陷Zn或Vo.通过V族元素实现P型化转变的关键在于其稳定性,因此通过亚稳的点缺陷之间的相互作用实现相对较稳定的p-ZnO是V族元素掺杂实现P型化转变的研究方向.考虑到I族元素在ZnO中的固溶度较高且受主能级较浅,通过I族元素的掺杂实现高电导p-ZnO也是实现P型化转变的思路;但是Ⅰ族元素的掺杂会引起严重的自补偿,因此实现I族元素在ZnO晶格中的定位是Ⅰ族元素掺杂实现P型化转变的研究方向.     

Examining the anomalous electrical characteristics observed in InN nanowires

Research interest in InN has intensified in recent years because of its unique material properties and promising applications in electronic and photonic devices. Measurements on InN nanowires presented by Chang et al., [J. Electron. Mater. 35, 738 (2006)] showed an anomalous resistance behavior in InN nanowires with diameters less than 90 nm. We examine possible theories presented in literature to explain this intriguing observation. We propose that the presence of a high density electron accumulation layer at the surface of thin InN nanowires is the most probable cause for the uncharacteristic relationship between the total measured resistance and the ratio of length-to-area. High density surface electron accumulation layer, characteristic of InN films and nanowire, promotes a surface conduction path distinct from the bulk conduction. For large diameter nanowires, bulk conduction is likely to be the dominant mechanism while surface conduction is proposed to play a major role for small diameter InN nanowires.     

Recent progress in p-type doping and optical properties of SnO2 nanostructures for optoelectronic device applications

SnO(2) semiconductor is a host material for ultraviolet optoelectronic devices applications because of its wide band gap (3.6 eV), large exciton binding energy (130 meV) and exotic electrical properties and has attracted great interests. The renewed interest is fueled by the availability of exciton emission in nanostructures, high quality epitaxial films, p-type conductivity, and heterojunction light emitting devices. This review begins with a survey of the patents and reports on the recent developments on SnO2 films. We focus on the epitaxial growth, p-type doping and photoluminescence properties of SnO(2) films and nanostructures, including the achievements in our group. Finally, the applications of SnO(2) nanostructures to optoelectronic devices including heterojunction light emitting devices, photodetectors and photovoltaic cells will be discussed.     

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.     

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Wurtzite‐structured III‐group nitrides, like GaN, InN, AlN, and their alloys, present both piezoelectric and semiconducting properties under straining owing to the polarization of ions in a crystal with non‐central symmetry. The piezoelectric polarization charges are created at the interface when a strain is applied. As a result, a piezoelectric potential (piezopotential) is produced, which is used as a “gate” to tune/control the charge transport behavior across a metal/semiconductor interface or a p‐n junction. This is called as piezotronic effect. A series of piezotronic devices and applications have been developed, such as piezotronic nanogenerators (NGs), piezotronic transistors, piezotronic logic devices, piezotronic electromechanical memories, piezotronic enhanced biochemical, and gas sensors and so on. With the flourished development of piezotronic effect, the piezo‐phototronic effect, as the three‐way coupling of piezoelectric polarization, semiconductor properties, and optical excitation, utilizes the piezopotential to modulate the energy band profile and control the carrier generation, transportation, separation, and/or recombination for improving performances of optoelectronic devices. This paper intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo‐phototronics, covering from the fundamental principles to devices and applications. This study will provide important insight into the potential applications of GaN based electronic/optoelectronic devices in sensing, active flexible/stretchable electronics/optoelectronics, energy harvesting, human‐machine interfacing, biomedical diagnosis/therapy, and prosthetics.

     

ZnO薄膜的本征缺陷、p型掺杂及其新型功能器件

ZnO是一种宽禁带半导体材料(3.37eV),具有较高的激子结合能(60meV),室温下激子仍然存在。由于其结构特点及优异的光电性能,ZnO在微电子学、光电子学、集成光学和微电子机械系统等高技术领域有着广阔的应用前景,在国内外引起极大的关注。但本征的ZnO呈n型电导,p型ZnO的获得因较强的自补偿效应,存在较大困难,限制了其应用水平。针对ZnO目前的研究、就其本征缺陷、p型掺杂以及新型功能器件等方面做一简要评述。     

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Heteroepitaxial growth of metal-catalyst-free indium nitride (InN) nanorods on GaN/sapphire substrates by radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system was investigated. We found that different N/In flow ratios together with the growth temperatures greatly influenced the surface morphology of InN nanorods and their structural properties. The InN nanorods have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM). Optical property was evaluated by photoluminescence (PL) measurements. At lower growth temperatures, InN nanorods were successfully grown. A pronounced two-dimensional growth mode was observed at higher growth temperature of 500 degrees C, and these films showed preferred orientation along the c-axis. XRD patterns and SEM images reveal that InN nanorods has high quality wurtzite structure with FWHM approaching 900 arcsec, and they have uniform diameters of about 150 nm and length of about 800 nm. Meanwhile, no metallic droplet was observed at the end of the nanostructured InN, and this is strong evidence that the nanorods are grown via the self-catalyst process. The PL peak at 0.8 eV is attributed to the quantum confinement and Moss-Burstein effects. These observations provide some valuable insights into the physical-chemical process for manufacturing InN nanorods devices.