外刊题录

1.半导体中离子注入杂质结构的计算机模拟模型S.S.Commun.,Vol.47,No.4,P.259,1983,72.具有SiO_2图形的硅衬底上无定形硅膜的横向固相外延Appl.Phys.Lett.,Vol.43,No.11,P.1028,1983,123.新MRS型负性抗蚀剂组分的最佳化IEEE Trans.ED,Vol.30,No.12,P.1780,1983,124.环境气体对未掺杂LEC GaAs晶体的影响Jap.J.Appl.Phys.Pt.1,Vol.22,No.11,p.1652,1983,115.InP中磷析出与时间和温度的关系J.Vac.Sci.Technol.B,Vol.1,No.3,P.825,1983,7～9     

外刊题录

1.聚酰亚胺薄膜的热性能和腐蚀特性Jap. J. Appl. Phys. pt. l. Vol. 23, No. 3,P. 384, 19842.用过硫酸铵作光致抗蚀剂、去除剂和清洗氧化剂Semiconductor Int., Vol. 7, No. 4,P. 109, 19843.NF_3:一种新的干法腐蚀气体S. S. Technol., Vol. 27, No. 3, P. 172,1984.4.用三甲基镓Ga源MBE生长GaAsJ. Appl. Phys., Vol. 55, No. 8, P. 3163,1984     

外刊题录

1.掺磷多晶硅膜中 1/f噪声的解释:品格散射的Hooge模型J.Appl.Phys,Vol.56,No.10,p.3022,1984.112.热生长SiO_2由固有氧化应力引起的致密作用J.Phys.D,Appl.Phys,Vol,17,No.11,p.2331,1984.113.半导体中杂质态的一种新研究法S.S.Commun,Vol.52,No.4,p.385,1984.104.带有欧姆接触的半导体中的双极热漂移ФТП,Vol.18,No.9,p.1507,1984.9     

外刊题录

1.GaAs-GaAlAs异质结构中电子迁移率与温度的关系Appl.Phys.Lett.、Vol.45,No.2,P.294,1984.72.半导体器件失效分析—理论、方法和实践Microelectron.J.,Vol.15,No.1,P.5,1984.1-23.双极功率器件(晶体管)Microelectron.Reliab,Vol.24,No.2,P.313,19844.新型硅微波功率晶体管可靠性大大提高Microw.RF,Vol.27,No.7,P.71,1984.75.大功率半导体器件采用ⅡA型金钢石作散热器提高了输出功率Microw.RF,Vol.27,No.7,P.74,1984.7     

外刊题录

1.半绝缘GaAs中表面电导的机理Appl.Phys.Lett.,Vol.44,No.9,P.869,19842.GaAs MOCVD中一种新的硅掺杂源——乙硅烷Appl.Phys.Lett.,Vol.44,No.10,P.986,19843.用超掺杂结构开发新半导体材料(制作超高速器件)Vol.29,No.8,P.7,19844.乳胶掩模材料电子材料,Vol.23,No.8,P.42,19845.光致抗蚀剂材料电子材料,Vol.23,No.8,P.51,19846.GaAs MESFET跨导和衬底特性之间的相互关系IEEE Electron Dev.Lett.,Vol.5,No.6,     

外刊题录

1.砷化镓可透基区晶体管设计的改进IEEE Trans.ED,Vol.30,No.10,P.13481983,102.硅化物工艺对双极晶体管电流增益的影响IEEE Trans,ED,Vo.30.No,10,P.1406,1983,103.松下使用MBE成功地研制出新结构的GaAs FET(日)电子技术,Vol.25,No.12,P.13,1983,114.制作亚微米厚GaAs薄膜的一种新方法APPl.Phys.Lett.,Vol.43,No.5,P.488,1983,95.多晶硅中硼和磷的扩散特性Thin Solid Films,Vol.100,No.3,P.235,1983,2     

目标背景研究专题题录介绍

1.Infrared Simulation Model SENSAT-2红外模拟模型 SENSAT-2《Appl.Opt.》1987,V.26,N.12,pp.2376～2382.2.High Speed Infrared Radiome(?)er 高速红外辐射计《JOSA》1959,V.49,N.2,p.179.3.Spectral Radiation of Sky and Terrain at Wavelength between 1 and 20 Micron 波长在1～20μm 的天空光谱辐射《JOSA》1960,V.50,N.12.PP.1308～8～1320.4.Re-Entry Radiation From A IRBM 中程弹道导弹再入辐射《IRE.Trans.on Millitary Electronics》1961.Vol.Mil-5,N,1,pp.19～25.     

光导碲镉汞专题文献索引

概述 001 光电导一百年 Photocondaetivity-A centennial,F.Stokmann,Phys.Status Solidi(a),1973,Vol.15,No.2,pp.381-390. 002 现代红外探测器 Modern infrared drectors,E.H.Putley,Phys.Technl 1973,Vol.4,no.3,pp.202-22.     

外刊题录

1.等离子体化学处理对单晶硅热氧化时缺陷形成的影响ИAH HeopιaнMamep.,Vol.21,No.1,P.5,1985,12.用MOCVD法生长GaAs外延层的形态J.Cryst.Growth,Vol.69,No.1,p.23,1984,113.聚酰亚胺膜的热特性、物理特性和腐蚀特性J.Electrochem.Soc.,Vol.132,No.1,P.155,1985,14.用于VLSI的改进型磷硅玻璃     

显示器件文献索引(续)

肠彩色显示用的液晶材料万于一表示用液晶材料向尾昭夫,今朋周治日立郭瑜(日)vol.63,No.J,pp.231~23),ioaz.96.染料与液晶Dyes and Liquid CrystalG .W.GrayDye Pigm(英)Vol.3,No.2/3,PP.203~209,1982.97.液晶显示器用的涂料Dyes for Liquid Crystal DisPlaysE .M Engler,A.C.LoweIBM Teeh Diselosure Bull,Vol.23,No.12,PP.55~ 58,1981,阳.液晶显示器用的黄色染料Yellow Dyes for Liquid Crystal DisPlays.N .J.Cleeak,R J CoxIBM Teeh Diselosure Bull,Vol.23,No.12,PP.5540一 55遵2,1 981.99.宾主型显示器中偶氮…     

VCSELs based on arrays of sub-monolayer InGaAs quantum dots

Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10–12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors. Original Russian Text ? S.A. Blokhin, N.A. Maleev, A.G. Kuz’menkov, Yu. M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, V.V. Dyudelev, G.S. Sokolovskiĭ, V.I. Kuchinskiĭi, M.M. Kulagina, M.V. Maximov, V.M. Ustinov, A.R. Kovsh, S.S. Mikhrin, N.N. Ledentsov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 633–638.     

外刊题录

1.SiO_2层中离子注入感生陷阱的俘获截面与电场的关系 Thin Solid Films.,Vol.99,No.4,P.331,1983.12.纯GaAs和掺杂GaAs中的空穴输运 J.AP-pl.,Phys.,Vol.54,No.8,P.4446,1983.83.掺磷多晶硅膜ac特性的说明:横过低势垒晶粒间界的传导 J.APPl.Phys.,Vol.54,No.8,P.4463,1983.84.氮化硅中的缺陷和杂质态 J.APPl.Phys.,Vol.54,No.8,P.4490,1983.85.具有亚微米分辨率和工艺稳定的自显影抗蚀剂 APPl.Phys.Lett.,Vol.43,No.1,P.74,1983.76.用于细条光刻的抗蚀剂 PIEEE.,Vol.71,No.5,P.570,1983.5     

外刊题录

1.GaAs材料技术的现状和将来展望Semiconductor World,Vol3.No.4,p.108,19842.短垂直沟道N~+-N~--N~+GaAs MES-FET的数值分析IEEE Electron DeV.Lett.,Vol.5,No.2,p.43,19843.具有负微分电阻的场效应晶体管(AlGaAs/GaAs异质结构)IEEE Electron Dev.Lett,Vol.5,No.2,p.5 7,19844.高耐压(850V)高速功率晶体管NEC技报,Vol.36,No.8,p.177,1983     

文献索引

(共八十二篇)仁1〕直波微波相位爵(英文) H .A.Dropkm IRE工n七er.Conv.Ree.,Pt.1,pP.143~147, 1058.〔2]精确的微波相移测量(英文) M .Magid IRE Trans.onl,Vo!.17,No.3一4, pp.321一331,1958. 泽文见“电子学泽丛”第从期,第49~57页。〔3]甚高须和超高缓振幅及相位的测量方法 (英文) G .D.Mozlteath,D.J Wllythe,K.W.T. Hughes PIEE,Vol.107,Pt.B,No.32,pP.150一154, 1960〔4〕超高镇速精波或脉冲波精密相位酚(英 文) R .T.Stevens E legtz、onies,Vol,33,No.10,pP.54一57, 1960.t6」微波频率相对相移的测量(英文) C .…     

A Modified Block Matching Motion Estimation Algorithm for the Very Low Bit-Rate video Coding

1IntroductionMohonestimationplaysanimportantroleindigitalvideocompression.Block-matchingtechniquehasbeenadoptedinmanyvideocompressionstandardssuchasH.261,MPEG-l,MPEG-2andH.263.Eventhoughthealgorithmtoestimatethemotionvectorsisnotspecifiedexplicitly.However,despiteitssuccessfulapplications,itproducesarathernoisyinchonfield.Inverylowbit-ratevideocodingapplications,theamountofthesideinformationfortheinchonfieldrepresentsanimPOrtantportionofthetotalbit-rate.Therefore,motionestimatetechniques…     

博士论文选题举例

1.J.A.Roumeliotis,”Propagation and scattering of electromagnetic wavein eccentric cylindrical and spherical conductor-dielectric configurations“,Ph.D.Thesis。Department of Electrical Engineering,National Technical Univer-sity of Athens,Greece,1979(in Greek).(Journal of The Franklin Institute,Vol.312,No.1,July 1981,p.58).2.W.B.Dolson,”Free electron laser theory,”Ph.D.dissertation,StanfordUniv.,Stanford,CA.,1977.     

红外成象技术专题题录索引(二)

1.中程空空导弹的多传感器导引头Multise仍or seeker for medium range air--to一ir而ssiles,D.V.Satish Chandra,SPIEVol.1306,1990,P.1802.自动成象红外导引头性能的评估系统Automated imaging infrared seeker perform-ance evaluatfon system,James.T.Ffournoy,Elisa R.Towry,Nancy 5.DeeP,SPIE Vol.1311,1990,P.Z121宾实地形的长、短波红外图象之间的相关性Correlation between images in the LW】R andSWIR of natura]grou耐terrai扶E.Agassi,K .wilner,N.Benyosef, SPIE Vol.1442,P.1264.一种商分辨率的机载多传…     

扫频技术资料索引

1.hp微波反射计 J .K.H、Intoi一and N.L.PaPI,as He、v lett一Paek盯d J.vol.6,sePtember一oetobe了,1954.2。比值计 N .L PaPPas IEEE Trans 011 Instrumel一tation,Vol.PG卜3,PP·25一触,APri],1954.3.自动显示有反射系数的波导阻抗计 H .L.Baehmal- IRE Tra才15 on MTT,Vo].MTT一3,PP·22一30,Januar了,1955.4.高频宽带反射计 R .T.Adans and A.Hor7atl- Elee.eommurl.,Vol.32一PP.118一125,June,1955.5.微波自动增盆控制系统 JorgenP·villding Trans.IRE,Vol.MTT一4,P.244.1956. 6.高频下小反射的幅度和…     

外刊题录

1.多品膜中载流子输运的扩散模型S.S.Electron.,Vol.27,No.7,p.633,1984.72.在有少量水的情况下硅外延层生长时引入的硼J.Electrochem.Soc.,Vol.131No.8,P.1900,1984.83.利用新的直拉法生长无缺陷GaAs晶体电子技术[日],Vol.26,NO.14,P.40,1984.124.光外延法和分子层外延法生长砷化镓外延层的技术     

激光损伤

001滋光摸结构对石英损伤的影晌 V G.Draggoo et al,Effeets of laser modestructure on damage in Quartz,IEEE J.Of Qu-ant.Eleetron.,Vol.QE一8,Feb.1972.Portl,pp.54一57. 002增退膜的激光感应损伤 R .R.Austin et al.,Laser indueed damage ofantirefleetion eoatings,Appl.Opties,Vol.12,Ma-reh 1972,pp.695一59了。 003滋光辐射对透明介质的破坏程度 1 .A Fersman et al.,Stages of surfaee fraetu-re of a transparent dieleetrie during laser irra-diation,KVANTOVAIA ELEKTRONIKA,No.3,1971sPP.61一66. 00…