Room-Temperature Synthesis of 2D Janus Crystals and their Heterostructures

Janus crystals represent an exciting class of 2D materials with different atomic species on their upper and lower facets. Theories have predicted that this symmetry breaking induces an electric field and leads to a wealth of novel properties, such as large Rashba spin–orbit coupling and formation of strongly correlated electronic states. Monolayer MoSSe Janus crystals have been synthesized by two methods, via controlled sulfurization of monolayer MoSe₂ and via plasma stripping followed thermal annealing of MoS₂. However, the high processing temperatures prevent growth of other Janus materials and their heterostructures. Here, a room-temperature technique for the synthesis of a variety of Janus monolayers with high structural and optical quality is reported. This process involves low-energy reactive radical precursors, which enables selective removal and replacement of the uppermost chalcogen layer, thus transforming classical transition metal dichalcogenides into a Janus structure. The resulting materials show clear mixed character for their excitonic transitions, and more importantly, the presented room-temperature method enables the demonstration of first vertical and lateral heterojunctions of 2D Janus TMDs. The results present significant and pioneering advances in the synthesis of new classes of 2D materials, and pave the way for the creation of heterostructures from 2D Janus layers.     

Lattice vibrations and Raman scattering in two-dimensional layered materials beyond graphene

We review lattice vibrational modes in atomically thin two-dimensional (2D) layered materials, focusing on 2D materials beyond graphene, such as group VI transition metal dichalcogenides, topological insulator bismuth chalcogenides, and black phosphorus. Although the composition and structure of those materials are remarkably different, they share a common and important feature, i.e., their bulk crystals are stacked via van der Waals interactions between “layers” while each layer is comprised of one or more atomic planes. First, we review the background of some 2D materials (MX₂, M = Mo, W; X = S, Se, Te. Bi₂X₃, X = Se, Te. Black phosphorus), including crystalline structures and stacking order. We then review the studies on vibrational modes of layered materials and nanostructures probed by the powerful yet nondestructive Raman spectroscopy technique. Based on studies conducted before 2010, recent investigations using more advanced techniques have pushed the studies of phonon modes in 2D layered materials to the atomically thin regime, down to monolayers. We will classify the recently reported general features into the following categories: phonon confinement effects and electron–phonon coupling, anomalous shifts in high-frequency intralayer vibrational modes and surface effects, reduced dimensionality and lower symmetry, the linear chain model and the substrate effect, stacking orders and interlayer shear modes, polarization dependence, and the resonance effect. Within the seven categories, both intralayer and interlayer vibrational modes will be discussed. The comparison between different materials will be provided as well.

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Potential 2D Materials with Phase Transitions: Structure,Synthesis, and Device Applications

Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few‐layers and then become a large and important subfamily of two‐dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long‐range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase‐transition materials have vast potential for use in new‐concept and functional devices. Here, potential 2D phase‐transition materials with CDWs and magnetic and dipole ordering, including transition metal dichalcogenides, transition metal halides, metal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced. The structures and experimental phase‐transition properties are summarized for the bulk materials and some of the obtained monolayers. In addition, recent experimental progress on the synthesis and measurement of monolayers, such as 1T‐TaS₂, CrI₃, and Cr₂Ge₂Te₆, is reviewed.     

Folded MoS2 layers with reduced interlayer coupling

We study molybdenum disulfide （MoS2） structures generated by folding single-layer and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.     

Superlubricity between MoS2 Monolayers

The ultralow friction between atomic layers of hexagonal MoS₂, an important solid lubricant and additive of lubricating oil, is thought to be responsible for its excellent lubricating performances. However, the quantitative frictional properties between MoS₂ atomic layers have not been directly tested in experiments due to the lack of conventional tools to characterize the frictional properties between 2D atomic layers. Herein, a versatile method for studying the frictional properties between atomic‐layered materials is developed by combining the in situ scanning electron microscope technique with a Si nanowire force sensor, and the friction tests on the sliding between atomic‐layered materials down to monolayers are reported. The friction tests on the sliding between incommensurate MoS₂ monolayers give a friction coefficient of ≈10^?4 in the regime of superlubricity. The results provide the first direct experimental evidence for superlubricity between MoS₂ atomic layers and open a new route to investigate frictional properties of broad 2D materials.     

0D Cs3Cu2X5 (X = I,Br, and Cl) Nanocrystals: Colloidal Syntheses and Optical Properties

0D lead‐free metal halide nanocrystals (NCs) are an emerging class of materials with intriguing optical properties. Herein, colloidal synthetic routes are presented for the production of 0D Cs₃Cu₂X₅ (X = I, Br, and Cl) NCs with orthorhombic structure and well‐defined morphologies. All these Cs₃Cu₂X₅ NCs exhibit broadband blue‐green photoluminescence (PL) emissions in the range of 445–527 nm with large Stokes shifts, which are attributed to their intrinsic self‐trapped exciton (STE) emission characteristics. The high PL quantum yield of 48.7% is obtained from Cs₃Cu₂Cl₅ NCs, while Cs₃Cu₂I₅ NCs exhibit considerable air stability over 45 days. Intriguingly, as X is changed from I to Br and Cl, Cs₃Cu₂X₅ NCs exhibit a continuous redshift of emission peaks, which is contrary to the blueshift in CsPbX₃ perovskite NCs.     

Emergence of an Antiferromagnetic Mott Insulating Phase in Hexagonal π‐Conjugated Covalent Organic Frameworks

While the search for 2D organic semimetallic Dirac materials displaying, like graphene, a Dirac cone at the Fermi level remains active, attention is also being paid to the quantum phase transition from semimetal to antiferromagnet. Such a transition in graphene‐like materials is predicted based on theoretical investigations of the 2D honeycomb lattice; it occurs (within a Hubbard model) when the on‐site electron–electron Coulomb repulsion (U) is much larger than the nearest‐neighbor inter‐site electronic coupling (t). Here, monomers carrying long‐lived radicals are considered and used as building blocks to design 2D hexagonal π‐conjugated covalent organic frameworks (COFs). Both the nonmagnetic semimetallic phase and magnetically ordered phases are evaluated. It is found that the electronic coupling between adjacent radical centers in these COFs is more than an order of magnitude smaller than in graphene while the on‐site Coulomb repulsion is reduced to a lesser extent. The resulting large U/t ratio drives these COFs into the antiferromagnetic side of the phase diagram. This work provides a first theoretical evidence of the realization of an antiferromagnetic Mott insulating phase in 2D π‐conjugated COFs and allows a strategy to achieve quantum phase transitions from antiferromagnet to spin liquid and to semimetal to be outlined.     

Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo,W, Nb; X = S,Se) monolayers with grain boundaries

Layered transition metal dichalcogenides with unique mechanical, electronic, optical, and chemical properties can be used for novel nanoelectronic and optoelectronic devices. Large-area monolayers synthesized using chemical vapor deposition are often polycrystals with many dislocations and grain boundaries (GBs). In the present paper, atomic structure and electronic properties of MX₂ (M = Mo, W, Nb; X = S, Se) with the GBs were investigated using first principles based on density functional theory. Simulation results revealed that the zigzag-oriented GBs (which consist of pentagon/heptagons (5-7) pairs) were more stable than the armchair-oriented GBs (which consist of pentagon/heptagons (5-7-5-7) pairs). The GBs induced defect levels are located within the band gap for the semiconductor materials of MX₂ (M = Mo, W; X = S, Se) monolayers, and the NbS₂ and NbSe₂ remained as metallic materials with GBs. Results provided a possible pathway to build these nano-layered materials into nanoelectronic devices.     

Nonconfinement Structure Revealed in Dion–Jacobson Type Quasi‐2D Perovskite Expedites Interlayer Charge Transport

Dion–Jacobson (DJ) type 2D perovskites with a single organic cation layer exhibit a narrower distance between two adjacent inorganic layers compared to the corresponding Ruddlesden–Popper perovskites, which facilitates interlayer charge transport. However, the internal crystal structures in 2D DJ perovskites remain elusive. Herein, in a p‐xylylenediamine (PDMA)‐based DJ perovskite bearing bifunctional NH₃⁺ spacer, the compression from confinement structure (inorganic layer number, n = 1, 2) to nonconfinement structure (n > 3) with the decrease of PDMA molar ratio is unraveled. Remarkably, the nonconfined perovskite displays shorter spacing between 2D quantum wells, which results in a lower exciton binding energy and hence promotes exciton dissociation. The significantly diminishing quantum confinement promotes interlayer charge transport leading to a maximum photovoltaic efficiency of ≈11%. Additionally, the tighter interlayer packing arising from the squeezing of inorganic octahedra gives rise to enhanced ambient stability.     

Excitonic Properties of Chemically Synthesized 2D Organic–Inorganic Hybrid Perovskite Nanosheets

2D organic–inorganic hybrid perovskites (OIHPs) represent a unique class of materials with a natural quantum‐well structure and quasi‐2D electronic properties. Here, a versatile direct solution‐based synthesis of mono‐ and few‐layer OIHP nanosheets and a systematic study of their electronic structure as a function of the number of monolayers by photoluminescence and absorption spectroscopy are reported. The monolayers of various OIHPs are found to exhibit high electronic quality as evidenced by high quantum yield and negligible Stokes shift. It is shown that the ground exciton peak blueshifts by ≈40 meV when the layer thickness reduces from bulk to monolayer. It is also shown that the exciton binding energy remains effectively unchanged for (C₆H₅(CH₂)₂NH₃)₂PbI₄ with the number of layers. Similar trends are observed for (C₄H₉NH₃)₂PbI₄ in contrast to the previous report. Further, the photoluminescence lifetime is found to decrease with the number of monolayers, indicating the dominant role of surface trap states in nonradiative recombination of the electron–hole pairs.     

Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets

We report on Raman spectroscopy of few quintuple layer topological insulator bismuth selenide (Bi2Se3) nanoplatelets (NPs), synthesized by a polyol method. The as-grown NPs exhibit excellent crystalline quality, hexagonal or truncated trigonal morphology, and uniformly flat surfaces down to a few quintuple layers. Both Stokes and anti-Stokes Raman spectroscopy for the first time resolve all four optical phonon modes from individual NPs down to 4 nm, where the out-of-plane vibrational A(1g)(1) mode shows a few wavenumbers red shift as the thickness decreases below ~15 nm. This thickness-dependent red shift is tentatively explained by a phonon softening due to the decreasing of the effective restoring force arising from a decrease of the van der Waals forces between adjacent layers. Quantitatively, we found that the 2D phonon confinement model proposed by Faucet and Campbell cannot explain the red shift values and the line shape of the A(1g)(1) mode, which can be described better by a Breit–Wigner–Fano resonance line shape. Considerable broadening (~17 cm(–1) for six quintuple layers) especially for the in-plane vibrational mode E(g)(2) is identified, suggesting that the layer-to-layer stacking affects the intralayer bonding. Therefore, a significant reduction in the phonon lifetime of the in-plane vibrational modes is probably due to an enhanced electron–phonon coupling in the few quintuple layer regime.     

Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS2 and ZrSe2

Recent reports on thermal and thermoelectric properties of emerging 2D materials have shown promising results. Among these materials are Zirconium-based chalcogenides such as zirconium disulfide (ZrS₂), zirconium diselenide (ZrSe₂), zirconium trisulfide (ZrS₃), and zirconium triselenide (ZrSe₃). Here, the thermal properties of these materials are investigated using confocal Raman spectroscopy. Two different and distinctive Raman signatures of exfoliated ZrX₂ (where X = S or Se) are observed. For 2D-ZrX₂, Raman modes are in alignment with those reported in literature. However, for quasi 1D-ZrX₂, Raman modes are identical to exfoliated ZrX₃ nanosheets, indicating a major lattice transformation from 2D to quasi-1D. Raman temperature dependence for ZrX₂ are also measured. Most Raman modes exhibit a linear downshift dependence with increasing temperature. However, for 2D-ZrS₂, a blueshift for A1g mode is detected with increasing temperature. Finally, phonon dynamics under optical heating for ZrX₂ are measured. Based on these measurements, the calculated thermal conductivity and the interfacial thermal conductance indicate lower interfacial thermal conductance for quasi 1D-ZrX₂ compared to 2D-ZrX₂, which can be attributed to the phonon confinement in 1D. The results demonstrate exceptional thermal properties for Zirconium-based materials, making them ideal for thermoelectric device applications and future thermal management strategies.     

Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications

III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp²-bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.     

In Search of Chiral Molecular Superconductors: κ-[(S,S)-DM-BEDT-TTF]2ClO4 Revisited

The relationship between chirality and superconductivity is an intriguing question. The two enantiomeric crystalline radical cation salts κ-[(S,S)-DM-BEDT-TTF]₂ClO₄ and κ-[(R,R)-DM-BEDT-TTF]₂ClO₄, showing κ-type arrangement of the organic layers, are investigated in search for superconducting chiral molecular materials following a 1992 report indicating the occurrence of a superconducting transition in the former compound. While the initial interpretation is presently challenged through in-depth temperature and pressure dependent single crystal resistivity measurements combined with band structure calculations, the two chiral conductors show metal like behavior with room temperature conductivities of 10–30 S cm⁻¹ at ambient pressure and stabilization of the metallic state down to the lowest temperatures under moderate pressures. Moreover, their structural and theoretical investigations reveal an original feature, namely the existence of two different κ layers with 1D and 2D electronic dimensionality, respectively, as a consequence of an interlayer charge transfer. The resistivity drop observed for one sample below 1 K and insensitive to magnetic field, possibly results from mixing in-plane and out-of-plane contributions to the measured resistance and suggests current induced charge order melting. This feature contradicts the occurrence of superconductivity in these chiral molecular conductors and leaves open the discovery of the first chiral molecular superconductors.     

Light‐Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion

2D materials cover a wide spectrum of electronic properties. Their applications are extended from electronic, optical, and chemical to biological. In terms of biomedical uses of 2D materials, the interactions between living cells and 2D materials are of paramount importance. However, biointerfacial studies are still in their infancy. This work studies how living organisms interact with transition metal dichalcogenide monolayers. For the first time, cellular digestion of tungsten disulfide (WS₂) monolayers is observed. After digestion, cells intake WS₂ and become fluorescent. In addition, these light‐emitting cells are not only viable, but also able to pass fluorescent signals to their progeny cells after cell division. By combining synthesis of 2D materials and a cell culturing technique, a procedure for monitoring the interactions between WS₂ monolayers and cells is developed. These observations open up new avenues for developing novel cellular labeling and imaging approaches, thus triggering further studies on interactions between 2D materials and living organisms.     

Synthesis of Large‐Area InSe Monolayers by Chemical Vapor Deposition

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high‐quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In₂O₃ in a chemical vapor deposition (CVD) system, resulting in large‐area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm², comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion‐gel‐gated field‐effect transistors based on CVD InSe monolayers exhibit n‐type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm² V^?1 s^?1 along with an on/off current ratio, of >10⁴ at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.     

Merits and Challenges of Ruddlesden–Popper Soft Halide Perovskites in Electro‐Optics and Optoelectronics

Following the rejuvenation of 3D organic–inorganic hybrid perovskites, like CH₃NH₃PbI₃, (quasi)‐2D Ruddlesden–Popper soft halide perovskites R₂A_n?1Pb_nX_3n+1 have recently become another focus in the optoelectronic and photovoltaic device community. Although quasi‐2D perovskites were first introduced to stabilize optoelectronic/photovoltaic devices against moisture, more interesting properties and device applications, such as solar cells, light‐emitting diodes, white‐light emitters, lasers, and polaritonic emission, have followed. While delicate engineering design has pushed the performance of various devices forward remarkably, understanding of the fundamental properties, especially the charge‐transfer process, electron–phonon interactions, and the growth mechanism in (quasi)‐2D halide perovskites, remains limited and even controversial. Here, after reviewing the current understanding and the nexus between optoelectronic/photovoltaic properties of 2D and 3D halide perovskites, the growth mechanisms, charge‐transfer processes, vibrational properties, and electron–phonon interactions of soft halide perovskites, mainly in quasi‐2D systems, are discussed. It is suggested that single‐crystal‐based studies are needed to deepen the understanding of the aforementioned fundamental properties, and will eventually contribute to device performance.     

Synergism of Geometric Construction and Electronic Regulation: 3D Se‐(NiCo)Sx/(OH)x Nanosheets for Highly Efficient Overall Water Splitting

The exploration of highly efficient electrocatalysts for both oxygen and hydrogen generation via water splitting is receiving considerable attention in recent decades. Up till now, Pt‐based catalysts still exhibit the best hydrogen evolution reaction (HER) performance and Ir/Ru‐based oxides are identified as the benchmark for oxygen evolution reaction (OER). However, the high cost and rarity of these materials extremely hinder their large‐scale applications. This paper describes the construction of the ultrathin defect‐enriched 3D Se‐(NiCo)S_x/(OH)_x nanosheets for overall water splitting through a facile Se‐induced hydrothermal treatment. Via Se‐induced fabrication, highly efficient Se‐(NiCo)S_x/(OH)_x nanosheets are successfully fabricated through morphology optimization, defect engineering, and electronic structure tailoring. The as‐prepared hybrids exhibit relatively low overpotentials of 155 and 103 mV at the current density of 10 mA cm^?2 for OER and HER, respectively. Moreover, an overall water‐splitting device delivers a current density of 10 mA cm^?2 for ≈66 h without obvious degradation.     

The compressive stress transition in Al,V, Zr,Nb and W metal films sputtered at low working pressures

Investigation of internal stresses in thin sputtered films of Al, V, Zr, Nb and W extends the observation of compression at low working pressures that was originally detected with Cr (D. W. Hoffman and J. A. Thornton, Thin Solid Films, 40 (1977) 355–363) and probes the atomic mass dependence of the transition pressure that was subsequently detected with Ti, Ni, Mo and Ta (J. A. Thornton and D. W. Hoffman, J. Vac. Sci. Technol., 14 (1977) 164–168). The observation of compressive stresses at sufficiently low sputtering pressures in all ten of the elements so far examined strongly supports the generality of this phenomenon. The five new metals under study also confirm the overall increase of the transition pressure with atomic mass indicated by the metals examined earlier. However, periodic deviations from the general trend are now evident among the group IVB, VB and VIB elements examined. The electrical conductivity and optical reflectance of the sputtered metal films exhibit abrupt changes in behavior near the transition pressure for compressive stresses. Above the transition pressure the conductivity and reflectance drop off rapidly; below the transition pressure these properties tend to level off at maximum values for the sputtered metal films. The interpretation of these observations in terms of a peening mechanism of energetic particle bombardment is discussed. Data are presented for films up to 0.3 μm thick sputtered onto glass substrates at a nominal deposition rate of 1 nm s^?1 over the pressure range 0.067–4.0 Pa of argon.     

Out‐of‐Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2 and MoSe2 on Au(111)

Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS₂ and MoSe₂ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out‐of‐plane strain in both MoS₂ and MoSe₂ layers, whereas no strain generation is observed on polycrystalline Au or SiO₂/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S? Mo? S (Se? Mo? Se) structure and Au atoms via unique moiré superstructure formation for MoS₂ and MoSe₂ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out‐of‐plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS₂ or MoSe₂ layer.