One-pot synthesis of MoSe<Subscript>2</Subscript> hetero-dimensional hybrid self-assembled by nanodots and nanosheets for electrocatalytic hydrogen evolution and photothermal therapy

We designed and prepared a hetero-dimensional hybrid (HDH) based on molybdenum selenide (MoSe2) nanodots (NDs) anchored in few-layer MoSe2 nanosheets (NSs) (MoSe2 HDH) via a one-pot hydrothermal process.The MoSe2 HDH exhibits excellent electrocatalytic activity toward hydrogen evolution reaction (HER).This is because,on the one hand,the edge-abundant features of MoSe2 NDs and the unique defect-rich structure at the interface of MoSe2 NSs/NDs could bring in more active sites for HER;on the other hand,the random stacking of the flake-like MoSe2 NSs on the surface of the supporting electrode may achieve efficient charge transport.Additionally,the MoSe2 HDH shows good water stability,desirable biocompatibility,and high near infrared (NIR) photothermal conversion efficiency.Therefore,the MoSe2 HDH is investigated as a nanomedicine in NIR photothermal therapy (PTT) for cancer.Specifically,the MoSe2 HDH can be applied as a dual-modal probe for computed tomography (CT) and photoacoustic tomography (PA) imaging owing to its strong X-ray attenuation ability and NIR absorption.Therefore,the MoSe2 HDH,combining PTr with CT/PA imaging into one system,holds great potential for imaging-guided cancer theranostics.This work may provide an ingenious strategy to prepare other hetero-dimensional layered transition metal dichalcogenides.     

Epitaxial growth of large-area and highly crystalline anisotropic ReSe<Subscript>2</Subscript> atomic layer

The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices.However,because of its low lattice symmetry and interlayer decoupling,anisotropic growth and out-of-plane growth occur easily,yielding thick flakes,dendritic structure,or flower-like structure.In this study,we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy.To achieve controllable growth,a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system.Within the confined reaction space,the nucleation density and growth rate of ReSe2 were significantly reduced,favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness.The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (＜600 ℃).Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm2/(V.s).Furthermore,the ReSe2 device exhibited an outstanding photoresponse to near-infrared light,with responsivity up to 8.4 and 5.1 A/W for 850-and 940-nm light,respectively.This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.     

Highly sensitive and rapidly responding room-temperature NO<Subscript>2</Subscript> gas sensors based on WO<Subscript>3</Subscript> nanorods/sulfonated graphene nanocomposites

Metal oxide/graphene nanocomposites are emerging as promising materials for developing room-temperature gas sensors. However, the unsatisfactory performances owing to the relatively low sensitivity, slow response, and recovery kinetics limit their applications. Herein, a highly sensitive and rapidly responding room-temperature NO₂ gas sensor based on WO₃ nanorods/sulfonated reduced graphene oxide (S-rGO) was prepared via a simple and cost-effective hydrothermal method. The optimal sensor response of the WO₃/S-rGO sensor toward 20 ppm NO₂ is 149% in 6 s, which is 4.7 times higher and 100 times faster than that of the corresponding WO₃/rGO sensors. In addition, the sensor exhibits excellent reproducibility, selectivity, and extremely fast recovery kinetics. The mechanism of the WO₃/S-rGO nanocomposite gas sensor is investigated in detail. In addition to the high transport capability of S-rGO as well as its excellent NO₂ adsorption ability, the superior sensing performance of the S-rGO/WO₃ sensor can be attributed to the favorable charge transfer occurring at the S-rGO/WO₃ interfaces. We believe that the strategy of compositing a metal oxide with functionalized graphene provides a new insight for the future development of room-temperature gas sensors.

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High-performance multilayer WSe<Subscript>2</Subscript> field-effect transistors with carrier type control

In this study, high-performance multilayer WSe₂ field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe₂ FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe₂ thickness. The carrier type evolves with increasing WSe₂ channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ～4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe₂ as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe₂ FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

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Novel fabrication of an SnO(2) nanowire gas sensor with high sensitivity

We fabricated a nanowire-based gas sensor using a simple method of growing SnO(2) nanowires bridging the gap between two pre-patterned Au catalysts, in which the electrical contacts to the nanowires are self-assembled during the synthesis of the nanowires. The gas sensing capability of this network-structured gas sensor was demonstrated using a diluted NO(2). The sensitivity, as a function of temperature, was highest at 200?°C and was determined to be 18 and 180 when the NO(2) concentration was 0.5 and 5?ppm, respectively. Our sensor showed higher sensitivity compared to different types of sensors including SnO(2) powder-based thin films, SnO(2) coating on carbon nanotubes or single/multiple SnO(2) nanobelts. The enhanced sensitivity was attributed to the additional modulation of the sensor resistance due to the potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire.     

Ultrasensitive chemiresistors based on electrospun TiO2 nanofibers

Nanostructured semiconducting metal oxides and particularly single nanowire devices offer exceptional gas sensitivity but at the expense of statistical variations and excessive noise levels. In this study TiO2/poly(vinyl acetate) composite nanofiber mats were directly electrospun onto interdigitated Pt electrode arrays, hot pressed at 120 degrees C, and calcined at 450 degrees C. This resulted in a novel multiple nanowire network composed of sheaths of 200-500 nm diameter cores filled with readily gas accessible approximately 10 nm thick single-crystal anatase fibrils. TiO2 nanofiber sensors tested for NO2, in dry air, exhibited exceptional sensitivity showing with, for example, a 833% increase in sensor resistance when exposed to 500 ppb NO2 at 300 degrees C, consistent with a detection limit estimated to be well below 1 ppb. Unusual response patterns were observed at high NO2 concentrations (> 12.5 ppm), consistent with n to p inversion of the surface-trap limited conduction facilitated by the high surface-to-volume ratio of this material.     

Electrical and oxygen sensing properties of Nd<Subscript>1−x</Subscript>Ba<Subscript>x</Subscript>CoO<Subscript>3</Subscript> ceramics

Nd_1?xBa_xCoO₃ (0?≤?x?≤?0.2) ceramics was synthesized by solid state reaction. All the samples have an orthorhombic perovskite structure (Space group P n m a). The electrical transport property indicates that Ba doped NdCoO₃ ceramics goes through semiconductor–metal phase transition. The electrical resistivity of Nd_1?xBa_xCoO₃ (0?≤?x?≤?0.15) ceramics decreases, while the electrical resistivity of Nd_0.8Ba_0.2CoO₃ ceramics increases with the increase of temperature. The chemical-sensing property shows that Nd_1?xBa_xCoO₃ ceramics is very sensitive to oxygen. Also, increasing Ba²⁺ doping concentration can reduce the oxygen desorption rate and increase the sensitivity of resistivity. These results indicate that Ba²⁺ doped NdCoO₃ ceramics is not only the good candidate of the cathode materials of solid fuel cells but also the good materials of gas sensor devices.     

YN<Subscript>2</Subscript> monolayer: Novel p-state Dirac half metal for high-speed spintronics

In spintronics,it is highly desirable to find new materials that can simultaneously possess complete spin-polarization,high-speed conduction electrons,large Curie temperature,and robust ferromagnetic ground states.Using first-principles calculations,we demonstrate that the stable YN2 monolayer with octahedral coordination is a novel p-state Dirac half metal (DHM),which not only has a fully spin-polarized Dirac state,but also the highest Fermi velocity (3.74 x 105 m/s) of the DHMs reported to date.In addition,its half-metallic gap of 1.53 eV is large enough to prevent the spin-flip transition.Because of the strong nonlocal p orbitals of N atoms (N-p) direct exchange interaction,the Curie temperature reaches over 332 K.Moreover,its ferromagnetic ground state can be well preserved under carrier doping or external strain.Therefore,the YN2 monolayer is a promising DHM for high-speed spintronic devices and would lead to new opportunities in designing other p-state DHMs.     

SWCNT气体传感器的NO2气敏特性

为了提高NO2气体检测的灵敏度和速度,以单壁碳纳米管（SWCNT）为装配介质,采用介电电泳方法获得单壁碳纳米管场效应晶体管（SWCNT—FET）作为气体传感器检测装置,通过原子力显微镜（AFM）和扫描电子显微镜（SEM）表征,结果显示,利用介电电泳方法能够成功地把SWCNTs装配到芯片的源漏两极间;通入NO2气体前后电特性变化情况的测试结果表明,选择接入电场频率为2MHz,峰峰值电压10V,介电电泳持续时间10s时,制备出SWCNT—FET成功率高,通入NO2气体后的电导率增加三个数量级。利用紫外光持续照射10min,SWCNT上的气体分子解附,使气体传感器可重复利用。     

Probing the intrinsic optical quality of CVD grown MoS<Subscript>2</Subscript>

Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance.The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is,therefore,highly desirable.Here,we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2).We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2.Low-temperature PL measurements are also used to evaluate the structural defects in MoS2,via defect-associated bound exciton emission,which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures.This work therefore provides a sensitive,noninvasive method to characterize the optical properties of TMDs,allowing the tuning of the growth parameters for the development of optoelectronic devices.     

MWCNT-polymer composites as highly sensitive and selective room temperature gas sensors

Multi-walled carbon nanotubes (MWCNTs)-polymer composite-based hybrid sensors were fabricated and integrated into a resistive sensor design for gas sensing applications. Thin films of MWCNTs were grown onto Si/SiO(2) substrates via xylene pyrolysis using the chemical vapor deposition technique. Polymers like PEDOT:PSS and polyaniline (PANI) mixed with various solvents like DMSO, DMF, 2-propanol and ethylene glycol were used to synthesize the composite films. These sensors exhibited excellent response and selectivity at room temperature when exposed to low concentrations (100 ppm) of analyte gases like NH(3) and NO(2). The effect of various solvents on the sensor response imparting selectivity to CNT-polymer nanocomposites was investigated extensively. Sensitivities as high as 28% were observed for an MWCNT-PEDOT:PSS composite sensor when exposed to 100 ppm of NH(3) and - 29.8% sensitivity for an MWCNT-PANI composite sensor to 100 ppm of NO(2) when DMSO was used as a solvent. Additionally, the sensors exhibited good reversibility.     

An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS‐Pentacene Films

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO₂ sensor based on 6,13‐bis(triisopropylsilylethynyl)­pentacene (TIPS‐petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors.     

Effect of composition on steady state and transient photoconductivity in isocoordinated In<Subscript>x</Subscript>Sb<Subscript>30−x</Subscript>Se<Subscript>70</Subscript> (0 ≤ x ≤ 25) chalcogenide films

The study of steady state and transient photocurrent measurement provide important information about carrier generation and recombination phenomena in various semiconducting systems for photo-sensor device applications. In the present work, the composition dependent analysis of photocurrents was studied for thermally evaporated Se-rich In_xSb_30?xSe₇₀ films of average thickness 800 nm. The indirect optical gap has been calculated from the transmission and reflection data and the variation of molecular units was studied from the Raman spectroscopy. The initial rise of photocurrent sharply to approach a steady state value during illumination and fast decay to a constant persistent current after stopping the illumination has been observed. The intensity dependence of photocurrent obeys the power law I_Ph?=?F^γ, where the value of exponent tells about the recombination process. The decay of photocurrent has been fitted with stretched exponential function for different compositions and at different light intensities. These results are important for the development of low cost photo absorbers for solar cell applications and visible region responsive photo sensor devices.     

Vapor growth of SnO<Subscript>2</Subscript> whiskers

Tin dioxide whiskers have been prepared by vapor growth in a tube furnace in flowing argon at a constant evaporation temperature, and the effect of carrier-gas flow rate during growth on their morphology, phase composition, and IR spectrum has been studied. The whiskers are more than 0.5 mm in length and are well crystallized. Reducing the flow rate of the carrier gas during whisker growth makes it possible to reduce the fraction of phases containing tin in lower oxidation states and favors preferential whisker growth along the c axis.     

Fabrication of flexible reduced graphene oxide/Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> hollow nanospheres based on-chip micro-supercapacitors for integrated photodetecting applications

Micro-supercapacitors (MSCs) as important on-chip micropower sources have attracted considerable attention because of their unique and advantageous design for optimized maximum functionality within a minimized sized chip and excellent mechanical flexibility/stability in miniaturized portable electronic device applications. In this work, we report a novel, high-performance flexible integrated on-chip MSC based on hybrid nanostructures of reduced graphene oxide/Fe₂O₃ hollow nanospheres using a microelectronic photo-lithography technology combined with plasma etching technique. The unique structural design for on-chip MSCs enables high-performance enhancements compared with graphene-only devices, exhibiting high specific capacitances of 11.57 F·cm^-3 at a scan rate of 200 mV·s^-1 and excellent rate capability and robust cycling stability with capacitance retention of 92.08% after 32,000 charge/discharge cycles. Moreover, the on-chip MSCs exhibit superior flexibility and outstanding stability even after repetition of charge/discharge cycles under different bending states. As-fabricated highly flexible on-chip MSCs can be easily integrated with CdS nanowire-based photodetectors to form a highly compacted photodetecting system, exhibiting comparable performance to devices driven by conventional external energy storage units.

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Surfactant assisted solid-state synthesis and gas sensor application of a SWCNT/SnO2 nanocomposite material

Although tin oxide has been the most widely investigated metal oxide material for gas detection, it suffers from the large resistance and high operating temperature. This could be overcome by hybridization with nanostructured carbon. In this work, tin oxide nanoparticles with ultrasmall sizes of 1-3 nm have been uniformly coated onto bundles of single-walled carbon nanotubes by a surfactant assisted solid state synthesis approach for the first time. Gas sensor properties of the as-synthesized nanocomposite material toward NO2 (from 5 to 60 ppm) are measured at 150 degrees C. Compared to the pure carbon tubes gas sensors, the nanocomposite gas sensor responds to NO2 in low concentrations with good linearity, high sensitivity, and fast recovery, while working at a relatively low temperature.     

CO<Subscript>2</Subscript> gas sensitivity of sputtered zinc oxide thin films

For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO₂ gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8·5 mbar for 18 h. Argon and oxygen gases were used as sputtering and reactive gases, respectively. ZnO phase could be crystallized using a pure metal target of zinc. The structure of the films determined by means of X-ray diffraction method indicates that the zinc oxide single phase can be fabricated in this substrate temperature range. The sensitivity of the film synthesized at substrate temperature of 130°C is 2·17 in the presence of CO₂ gas at a measuring temperature of 100°C.     

Low-concentration NO/sub 2/ detection with an adsorption porous silicon FET

Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO/sub 2/ detection by using the APSFET is demonstrated for the first time. NO/sub 2/ concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.     

Microstructure and H<Subscript>2</Subscript>S gas sensing properties of nanocrystalline perovskite-type La<Subscript>0.6</Subscript>Co<Subscript>0.4</Subscript>Mn<Subscript>0.5</Subscript>Ni<Subscript>0.5</Subscript>O<Subscript>3</Subscript>

Nanocrystalline La_1−x Co _x Mn_1−y Ni _y O₃ (x = 0.2 and 0.4; y = 0.1, 0.3, and 0.5) thick films sensors prepared by sol–gel method were studied for their H₂S gas sensitivity. The structural and morphological properties have been carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Average particle size estimated from XRD and TEM analyses was observed to be 30–35 nm. The gas response characteristics were found to depend on the dopants concentration and operating temperature. The maximum H₂S gas response of pure LaMnO₃ was found to be at 300 °C. In order to improve the gas response, material doped with transition metals Co and Ni on A- and B-site, respectively. The La_0.6Co_0.4Mn_0.5Ni_0.5O₃ shows high response towards H₂S gas at an operating temperature 250 °C. The Pd-doped La_0.6Co_0.4Mn_0.5Ni_0.5O₃ sensor was found to be highly sensitive to H₂S at an operating temperature 200 °C. The gas response, selectivity, response time and recovery time were studied and discussed.