Surface contribution to the energy loss of slow ions

We calculate the stopping power and the energy lost by a low energy ion approaching and crossing the surface of a semi-infinite medium at normal incidence. The specular reflection model is used to describe the behaviour of the medium. The contribution to the energy loss due to surface and bulk excitations is analyzed in terms of the excitation of electron-hole pairs and damped plasmons.     

Phonon contribution to wetting phenomena: macroscopic theory

We present a macroscopic treatment that clarifies the role of phonons in the wetting of a solid by an ideal liquid, such as liquid ⁴He. We show that in the equation for the wetting temperature the phonon contribution cancels exactly. Therefore, a pure phonon mechanism always results in wetting, and other mechanisms determine whether wetting or non-wetting occurs. The importance of ripplon excitations for the wetting phenomenon is discussed.     

An improved method of energy calibration for position-sensitive silicon detectors

Energy calibration of resistive charge division-based position-sensitive silicon detectors is achieved by parabolic fitting in the traditional method, where the systematic variations of vertex and curvature of the parabola with energy must be considered. In this paper we extend the traditional method in order to correct the fitting function, simplify the procedure of calibration and improve the experimental data quality. Instead of a parabolic function as used in the traditional method, a new function describing the relation of position and energy is introduced.The energy resolution of the 8.088 Me V α decay of213 Rn is determined to be about 87 ke V(FWHM), which is better than the result of the traditional method, 104 ke V(FWHM). The improved method can be applied to the energy calibration of resistive charge division-based position-sensitive silicon detectors with various performances.     

Phonon heat transport in silicon nanowires

Thermal conductivity of silicon and porous silicon nanowires based on the equation of phonon radiative transport is theoretically evaluated. The thermal conductivities of silicon nanowires with square cross-sections are found to match molecular dynamics simulation results reasonably well. It is shown that the results of meso-porous silicon nanowires are about two orders of magnitude lower than that of silicon nanowires in a wide range of temperature (50 K-300 K). Received 24 April 2001 and Received in final form 23 December 2001     

Phonon field contribution to the g shift in Yb: YES

The dynamic crystal field correction to the g factor of Yb⁺³: YES is evaluated. The approach is through the normal modes of the compex. It is found that the zero point phonon field contribution is in agreement with the observed g shift.     

Measurement of radiation energy by spectrometric systems based on uncooled silicon detectors

The results of measurements of radiation energy for single-channel detection systems based on uncooled silicon planar detectors and spectrometric readout electronics, developed at the Kharkiv Institute of Physics and Technology National Scientific Center, are presented. Radiation sources of ⁵⁵Fe, ²⁴¹Am, ⁵⁷Co, ¹³⁷Cs, and ^99MTc and characteristic X-ray radiation (CXR) are used in the experiments. The radiation energy in the range of E _γ = 3–140 keV is measured by a spectrometer based on a Si PIN detector. The energy resolution (full width at half maximum, FWHM) in this energy range changes with increasing photon energy from 0.97 to 1.3 keV. The CXR of calcium (K _α = 3.69 keV) is measured by a Si planar detector with an input aluminum foil. Emission lines in the energy range of E _γ = 0.04–0.662 MeV are measured by a CsI(Tl) scintillator-silicon PIN-photodiode detection system. The energy resolution of the spectrometer changes with quantum energy increasing from 22 to 70 keV. The CXR from cesium and iodine with K _α 31 and 28.6 keV, respectively, is recorded.     

The fabrication of high quality silicon junction detectors by low energy ion implantation

High quality silicon junction detectors have been made by implantation of boron and phosphorus ions into silicon wafers. Resolutions of 20 keV for Po α-particles were obtained.     

Counterdoped extrinsic silicon infrared detectors

A novel type of doping scheme is described which could lead to background-limited operation of extrinsic, photoconductive i.r. detectors in the 3–5 μm and 8–14 μm bands at much higher operating temperatures than is possible with conventional dopants. The scheme involves compensation of a very deep level with a shallow impurity of the opposite type. A theoretical analysis is given which shows that very exact compensation is not necessary for good detector performance.     

Phonon energy in an anharmonic quasi-one-dimensional solid

For the first time, the phonon energy per unit volume in a large anharmonic quasi-one-dimensional solid is determined by considering all polarizations of the various modes of phonon propagation and by assuming the solid as a lattice of atoms behaving as the Morse oscillators. In this context the equilibrium phonon occupation number, which is given by the Bose distribution, replaces formally the vibrational quantum number into the expression for the Morse-oscillator energy. In addition, the quasi-harmonic solid is discussed within the above framework so that the phonon energy per unit volume is calculated for a large quasi-harmonic and quasi-one-dimensional solid.     

300 eV—1GeV质子在硅中非电离能损的计算

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.引起质子在硅中NIEL的作用机理有库仑相互作用和核相互作用,质子能量范围从位移损伤阈能到1 GeV.当质子能量位于低能区时,库仑相互作用占主导地位,采用解析方法和TRIM程序计算NIEL;当质子能量位于高能区时,NIEL主要来自质子与靶原子核的弹性和非弹性相互作用,使用MCNPX/HTAPE3X进行模拟仿真计算由核反应引起的NIEL.实现了能量范围为300 eV—1 GeV的质子入射硅时NIEL的计算.计算结果表明,MCNPX/HTAPE3X可用于计算高能质子在材料中产生的反冲核所引起的NIEL,结合解析方法和TRIM程序可计算得到由于库仑相互作用引起的NIEL.     

Interfacial contribution to cluster free energy

The Monte Carlo technique of “overlapping distributions” is used for computing directly the free energy difference F_{N + 1} ?F_N between two clusters containing respectively N + 1 and N solute atoms, in the square and the simple cubic Ising model with nearest neighbour interactions. High accuracy results are obtained within reasonable computer times. The capillarity approximation gives a good fit to the data, provided the following is taken into account: (i) the specific bulk and surface energies are given their macroscopic equilibrium values; (ii) a curvature correction to the surface specific energy has to be introduced: it is positive for two dimensions and negative for three dimensions; (iii) a size independent term is to be added in three dimensions; it may be viewed as a corner contribution; (iv) the coefficient of the logarithmic term is given its more recent value. When introduced in the master equation which describes the kinetics of the cluster population, within the simplifying assumptions of the classical nucleation theory, good agreement is found, for the shapes of the cluster size distributions, with the numerical experiments on the kinetic Ising model in two dimensions. However, the time scales of both computations do not match linearly. Possible reasons for this discrepancy are discussed.     

Effect of surface excitations on the reflection electron energy loss spectrum in silicon

The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter P _S and theoretical calculations. The relative contribution of surface excitations is also determined by decomposing the integral reflection electron energy loss spectra into Gaussian curves.     

Phonon contribution to the shear viscosity of a superfluid Fermi gas in the unitarity limit

We present a detailed analysis of the contribution of small-angle Nambu–Goldstone boson (phonon) collisions to the shear viscosity, η$\eta$, in a superfluid atomic Fermi gas close to the unitarity limit. We show that the experimental values of the shear viscosity coefficient to entropy ratio, η/s$\eta /s$, obtained at the lowest reached temperature can be reproduced assuming that phonons give the leading contribution to η$\eta$. The phonon contribution is evaluated considering 1↔2$1\leftrightarrow 2$ processes and taking into account the finite size of the experimental system. In particular, for very low temperatures, T?0.1T_F$T?0.1T_F$, we find that phonons are ballistic and the contribution of phonons to the shear viscosity is determined by the processes that take place at the interface between the superfluid and the normal phase. This result is independent of the detailed form of the phonon dispersion law and leads to two testable predictions: the shear viscosity should correlate with the size of the optical trap and it should decrease with decreasing temperature. For higher temperatures the detailed form of the phonon dispersion law becomes relevant and, within our model, we find that the experimental data for η/s$\eta /s$ can be reproduced assuming that phonons have an anomalous dispersion law.     

Laser plasma monitored by silicon carbide detectors

The excellent physical and chemical properties and the radiation hardness of silicon carbide (SiC) render this material particularly suitable for the realization of radiation detectors. In this paper we describe the main properties of SiC and the processes needed to realize good performance detectors. To this purpose, we made SiC Schottky diodes that were electrical characterized by using different techniques. In order to test the radiation hardness, the diodes were irradiated with different ion beams and the analysis of the electrical measurements allowed to identify the defects responsible of the device degradation. These detectors have been used to monitor the multi-MeV ions of the plasma emitted by irradiation of various targets with 300-ps laser at high intensity (10¹⁶?W/cm²). These measurements highlighted that the use of SiC detectors enhances the sensitivity to ions detection due to the cutting of the visible and soft ultraviolet radiation emitted from plasma. The small rise time and the proportionality to ion energy evidence that these detectors are a powerful tool for the characterization of ion generated by high-intensity pulsed laser.