Ultrafast All‐Optical Switching of Germanium‐Based Flexible Metaphotonic Devices

Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light–matter interactions within the semiconductor. Here, a germanium‐thin‐film‐based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub‐picosecond decay constant of 670 fs is attributed to the presence of trap‐assisted recombination sites in the thermally evaporated germanium film.     

A Solution‐Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon‐Near‐Zero Medium

All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon‐near‐zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all‐optical control and device design. Here the authors demonstrate ultrafast all‐optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet‐chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub‐picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution‐processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.     

A Superconducting Dual‐Channel Photonic Switch

The mechanism of Cooper pair formation and its underlying physics has long occupied the investigation into high temperature (high‐T_c) cuprate superconductors. One of the ways to unravel this is to observe the ultrafast response present in the charge carrier dynamics of a photoexcited specimen. This results in an interesting approach to exploit the dissipation‐less dynamic features of superconductors to be utilized for designing high‐performance active subwavelength photonic devices with extremely low‐loss operation. Here, dual‐channel, ultrafast, all‐optical switching and modulation between the resistive and the superconducting quantum mechanical phase is experimentally demonstrated. The ultrafast phase switching is demonstrated via modulation of sharp Fano resonance of a high‐T_c yttrium barium copper oxide (YBCO) superconducting metamaterial device. Upon photoexcitation by femtosecond light pulses, the ultrasensitive cuprate superconductor undergoes dual dissociation–relaxation dynamics, with restoration of superconductivity within a cycle, and thereby establishes the existence of dual switching windows within a timescale of 80 ps. Pathways are explored to engineer the secondary dissociation channel which provides unprecedented control over the switching speed. Most importantly, the results envision new ways to accomplish low‐loss, ultrafast, and ultrasensitive dual‐channel switching applications that are inaccessible through conventional metallic and dielectric based metamaterials.     

Solution‐Processed All‐Ceramic Plasmonic Metamaterials for Efficient Solar–Thermal Conversion over 100–727 °C

Low‐cost and large‐area solar–thermal absorbers with superior spectral selectivity and excellent thermal stability are vital for efficient and large‐scale solar–thermal conversion applications, such as space heating, desalination, ice mitigation, photothermal catalysis, and concentrating solar power. Few state‐of‐the‐art selective absorbers are qualified for both low‐ ( < 200  ° C) and high‐temperature ( > 600  ° C) applications due to insufficient spectral selectivity or thermal stability over a wide temperature range. Here, a high‐performance plasmonic metamaterial selective absorber is developed by facile solution‐based processes via assembling an ultrathin ( ≈ 120 nm) titanium nitride (TiN) nanoparticle film on a TiN mirror. Enabled by the synergetic in‐plane plasmon and out‐of‐plane Fabry–Pérot resonances, the all‐ceramic plasmonic metamaterial simultaneously achieves high, full‐spectrum solar absorption (95%), low mid‐IR emission (3% at 100  ° C), and excellent stability over a temperature range of 100–727  ° C, even outperforming most vacuum‐deposited absorbers at their specific operating temperatures. The competitive performance of the solution‐processed absorber is accompanied by a significant cost reduction compared with vacuum‐deposited absorbers. All these merits render it a cost‐effective, universal solution to offering high efficiency (89–93%) for both low‐ and high‐temperature solar–thermal applications.     

Improved Morphology and Performance of Solution‐Processed Metal‐Oxide Thin‐Film Transistors Due to a Polymer Based Interface Modifier

The influence of a polymer interface modifier on the performance of solution‐processed indium‐based metal‐oxide (MO) thin‐film transistors (TFTs) is investigated. We use the polymer ethoxylated polyethylenimine (PEIE). Compared to a reference sample this modification enhances the mobility by a factor of four, clearly reduces the contact and the sheet resistance, and decreases the charge carrier activation energy by about 20%. The improved electrical performance originates from both a reduced contact and a reduced sheet resistance of the TFTs. The molecular dipole of PEIE reduces the work function of the electrodes. Adversely the dipole enhances the off current and the trap density at the semiconductor/dielectric interface for bottom‐contact transistors with small channel length. The substrate becomes highly polar with a PEIE‐treatment. Accordingly, topographical studies of bottom‐contact TFTs show a very similar MO film morphology on the electrodes and in the channel for modified TFTs, whereas in the untreated samples the film has a higher roughness on the electrodes than in the channel. TFTs in top‐contact configuration with the polymer interface layer at the dielectric/semiconductor interface also show higher mobility compared to the reference MOTFTs which displays that the improved performance is due to the improved morphology of the MO film.     

Solution‐Processing of High‐Purity Semiconducting Single‐Walled Carbon Nanotubes for Electronics Devices

High‐purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) are of paramount significance for the construction of next‐generation electronics. Until now, a number of elaborate sorting and purification techniques for s‐SWCNTs have been developed, among which solution‐based sorting methods show unique merits in the scale production, high purity, and large‐area film formation. Here, the recent progress in the solution processing of s‐SWCNTs and their application in electronic devices is systematically reviewed. First, the solution‐based sorting and purification of s‐SWCNTs are described, and particular attention is paid to the recent advance in the conjugated polymer‐based sorting strategy. Subsequently, the solution‐based deposition and morphology control of a s‐SWCNT thin film on a surface are introduced, which focus on the strategies for network formation and alignment of SWCNTs. Then, the recent advances in electronic devices based on s‐SWCNTs are reviewed with emphasis on nanoscale s‐SWCNTs' high‐performance integrated circuits and s‐SWCNT‐based thin‐film transistors (TFT) array and circuits. Lastly, the existing challenges and development trends for the s‐SWCNTs and electronic devices are briefly discussed. The aim is to provide some useful information and inspiration for the sorting and purification of s‐SWCNTs, as well as the construction of electronic devices with s‐SWCNTs.