共查询到19条相似文献,搜索用时 62 毫秒
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量子阱无序的窗口结构InGaAs/GaAs/AlGaAs量子阱激光器 总被引:3,自引:0,他引:3
对SiO2薄膜在快速热退火条件下引起的空位诱导InGaAs/GaAs应变量子阱无序和SrF2薄膜抑制其量子阱无序的方法进行了实验研究。并将这两种技术的结合(称为选择区域量子阱无序技术)应用于脊形波导InGaAs/GaAs/AlGaAs应变量子阱激光器,研制出具有无吸收镜面的窗口结构脊形波导量子阱激光器。该结构3μm条宽激光器的最大输出功率为340mW,和没有窗口的同样结构的量子阱激光器相比,最大输出功率提高了36%。在100mW输出功率下,发射光谱中心波长为978nm,光谱半宽为1.2nm。平行和垂直方向远场发散角分别为7.2°和30° 相似文献
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地于半导体分别限制单量子阱激光器,为了降低阈值电流,提高外量子效率,分析和讨论了影响阈值电流和外量子效率的各种因素,并做了一定的数值计算,给出了量佳结构参数。 相似文献
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综述了近几年来国外在量子阱半导体激光器方面的开发现状,着重阐述了在提高器件性能方面获得低阈值电流,降低α参数和线宽的重要性。 相似文献
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本文报道用分子束外延设备研制梯度折射率分别限制式单量子阱AlGaAs/GaAs脊形波导半导体激光器。该激光器具有良好的性能,条宽5μm器件室温阈值电流23mA,线性连续输出单模激光功率大于15mW。 相似文献
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采用MOCVD 方法成功地研制了具有线性GRIN 结构GaAs/AlGaAs单量子阱激光器。该激光器的峰值波长为815~825 nm ,阈值电流为130 m A。工作电流在480 m A 时,单面连续输出光功率高达200 m W,且基本保持在单模工作状态。工作在970 m A 时,单面连续输出光功率为0.5 W。 相似文献
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An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin barrier into the QW are determined. The first experimental observation of an increase in mobility by a factor of 1.3 in a QW of thickness L=26 nm upon introducing a thin (1–1.5 nm) AlAs barrier is reported. 相似文献
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The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution inL valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 μA per 1 μm stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively. 相似文献
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The room-temperature electroreflectance and reflectance of a GaAs/AlGaAs single quantum well (QW) structure are studied. An oscillatory behavior of the electroreflectance signal as a function of the thickness of the top AlGaAs barrier layer is observed. The experimental data are analyzed using a dielectric function of QWs and the transfer matrix method for multilayer systems. This analysis allows the determination of the parameters of the QW and the barrier layers. 相似文献
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为研究太赫兹量子级联激光器(THz QCLs)中的热传输及有效散热方法,建立了二维/三维有限元热分析模型,模拟计算了GaAs/AlGaAs THz QCLs低温工作时的温度及热流分布;并讨论了源区结构参数、热沉材料及散热膜层对器件热传输的影响规律。研究结果表明,器件源区温度水平方向分布较均匀,垂直方向温差大,源区热量主要依靠热沉导出;减小源区厚度、增加腔长与减小脊宽均有利于促进热传导并降低源区温度;在器件顶部增加AlN薄膜具有显著的辅助散热效果,当薄膜厚度大于8 μm时,源区温降趋于缓慢。 相似文献
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Ion beam milling-induced damage in a 500 AA AlGaAs/40 AA GaAs/500 AA AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500-1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80-85%) of the original luminescence intensity was recovered on annealing at 400 degrees C for 5 min.<> 相似文献
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The results of simulations of Γ−X scattering in GaAs/AlGaAs quantum wells are presented, discussing the importance of the mole fraction, doping density, and lattice and electron temperatures in determining the scattering rates. A systematic study of Γ−X scattering in GaAs/AlxGa1−xAs heterostructures, using a single quantum well to determine the importance of well width, molar concentration x, lattice temperature, and doping density, has been performed. After this we consider a double quantum well to determine the role of intervalley scattering in the transport through single-layer heterostructures, i.e. Γ−X−Γ scattering compared with Γ−Γ scattering. Finally, we estimate the relative importance of intervalley scattering in a GaAs-based quantum-cascade laser device and compare it with other relevant scattering mechanisms important to describe carrier dynamics in the structure. Our simulations suggest that Γ−X scattering can be significant at room temperature but falls off rapidly at lower temperatures. 相似文献
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本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。该器件具有较低的阈值电流密度和单模运转特性,连续输出功率可达55mw。 相似文献
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GaAs/AlGaAs quantum well infrared photodetector with low noise 总被引:1,自引:0,他引:1
DIENG Jun WANG Bin HAN Jun LI Jian-jun SHEN Guang-di 《光电子快报》2005,1(1):37-39
A novel kind of multi-quantum well infrared photodetector(QWlP) is presented. In the new structure device,a p-type contact layer has been grown on the top of the conventional structure of QWlP,then a small tunneling current is instead of the large compensatory current,which made the device low dark current and low noise characteristics. The measured result of dark current is consistent with the calculated result, and the noise of the new structure QWIP is decreased to one third of the conventional QWlP. 相似文献
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Reports GaAs/AlGaAs quantum well waveguide phase modulators with high phase shift coefficients, as large as 520 degrees per V mm. By operating at wavelengths far below the bandedge and applying DC bias the authors achieve large electro-optic modulation with low absorption loss in device lengths on the order of 100 μm and drive voltages on the order of 1 V 相似文献