Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET

Silicon - In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET...     

Gate All Around Junctionless Dielectric Modulated BioFET Based Hybrid Biosensor

Silicon - Here in this work, we demonstrate the concept of hybrid biosensor based on embedded cavity gate all around (GAA) junctionless field effect transistors (JLT) capable of sensing,...     

Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor

Silicon - This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within...     

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Silicon - The gate material work function engineering and hetero-dielectric engineering concepts are discussed in this paper to design a novel triple material DG Tunnel FET. The three different...     

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Silicon - Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due to their design and the device they are based on. The...     

Low-K Dielectric Pocket and Workfunction Engineering for DC and Analog/RF Performance Improvement in Dual Material Stack Gate Oxide Double Gate TFET

Silicon - In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF performance in dual material stack gate oxide double gate tunnel field effect transistor. For this,...     

Dual Metal Double Gate Ge-Pocket TFET (DMG-DG-Ge-Pocket TFET) with Hetero Dielectric: DC & Analog Performance Projections

Silicon - This work exclusively illustrates dual-metal double gate Ge pocket tunnel field effect transistor (DMG-DG-Ge pocket TFET) with hetero gate dielectric. This structure includes dual-metal...     

Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

Silicon - In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate...     

Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current

Silicon - In this paper, to solve the problem of higher ambipolar leakage current (Iambipolar) of Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS SBMOS), we...     

Analytical Modeling of a Triple Material Double Gate TFET with Hetero-Dielectric Gate Stack

Silicon - In this paper, we propose and develop an analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising...     

Design and Simulation of Symmetrical Dual Gate on Drain Side with Overlapped and Underlapped Regions of TFET

Silicon - A unique Symmetrical Dual Metal Gate Extended on drain side with overlapped and underlapped three regions of Tunnel Field Effect Transistor (DG-ED-TFET) have been designed and...     

Surface Potential Modeling and Simulation Analysis of Dopingless TFET Biosensor

Silicon - The present paper has proposed a dielectric modulated gate underlap dopingless tunnel field effect transistor (DM-GUD-TFET). In the proposed device, a cavity is introduced on side of the...     

Design and Comparative Analysis of Heterogeneous Gate Dielectric Nanosheet TFET with Temperature Variance

Silicon - In this article, a Heterogeneous Gate-Dielectric Nanosheet Tunnel Field Effect Transistor (HD-NSH-TFET) with three channels is investigated using the 3-D Visual TCAD simulator. The HD...     

Design and Investigation of Split Gate Dielectric Modulated JLFET for Detection of Biological Molecule Using TCAD Simulation

Silicon - Here, a split gate insulator-controlled Junction less FET also known as SG-DM-JLFET is investigated and proposed to recognize biomolecules such as uricase, biotin, or aminopropyl-...     

Influence of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET for Improved Analog/RF Performance

Silicon - This paper investigates the RF Stability performance of the Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET using 3D -...     

Analytical Modelling and Simulation of Si-Ge Hetero-Junction Dual Material Gate Vertical T-Shaped Tunnel FET

Silicon - In this paper, a compact 2D analytical modelling of surface potential and simulation of Si-Ge hetero-junction Dual Material Gate Vertical t-shape T-FET is presented. In the proposed...     

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Silicon - In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. Firstly,...     

Novel Attributes and Analog Performance Analysis of Dual Material Gate FINFET Based High Sensitive Biosensors

Silicon - In this study dual material gate FinFET is designed to work as a dielectric modulated biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold voltage,...     

Improvement of Subthreshold Characteristics of Dopingless Tunnel FET Using Hetero Gate Dielectric Material: Analytical Modeling and Simulation

An improved subthreshold analytical model of Dual Material Double Gate Junctionless Tunnel FET (DMDG JLTFET) with stacked / hetero-dielectric gate oxide structure is proposed. The stacked gate oxide structure comprises of Silicon-dioxide (SiO₂) and Titanium Oxide (TiO₂). The high-K gate stack engineered device overcomes the Short Channel Effects (SCEs) caused by the ultrathin silicon devices. The subthreshold analysis is carried out by solving a two-dimensional Poisson’s equation using Parabolic approximation method. These characteristics are analyzed against various device parameters. Also, the impact of different high-K gate oxide materials with SiO₂ is also studied. A comparative analysis of short channel effects for DMDG TFET and DMDG JLTFET has been carried out. The results reveal that the proposed device provides better I_ON current, low leakage current and improved Transconductance-to-drain current ratio. Using TCAD Sentaurus device simulator, the subthreshold analytical model results have been simulated and verified with other TFET models.