介质/金属/介质透明导电薄膜研究进展

介质/金属/介质(dielectric/metal/dielectric,D/M/D)多层膜既透明又导电且具有柔性,最有可能替代ITO膜,作为透明导电电极,应用于柔性显示、太阳能电池等光电器件。本文介绍D/M/D膜系的起源,分析了透明导电机理,然后,从多层膜制备参数,热处理工艺及纳米银层表面等离激元共振对多层膜光电性能的影响三个方面综述了D/M/D膜系中得到广泛研究的二氧化钛/银/二氧化钛多层膜的最新研究进展,并展望了D/M/D透明导电薄膜的研究方向。     

CuPc/ZnS多层复合薄膜的制备及光电性能的研究

为了找到制备具有最佳光电导性能的CuPc/ZnS多层复合薄膜的工艺参数 ,研究了CuPc/ZnS多层复合膜的层数系列、CuPc膜层的厚度系列、ZnS膜层的厚度系列和基板温度系列的光电导性能和结构。利用表面电位衰减、紫外 可见光谱和X射线衍射分析了复合薄膜的光电导性能和结构及其关系 ,探讨了改变复合膜层数、CuPc膜层和ZnS膜层的厚度以及基板温度对CuPc/ZnS多层复合薄膜的光电导性能和结构的影响     

某些D/M非对称膜系的光谱吸光度

研究了由 Al 和 Ag 为基膜,SiO、SnO_2、CeO_2、ZnS 或 CdS 为介质层所组成的非对称型D/M 光学膜系在320—1000nm 波长范围内的光谱吸光恃性。发现单一的 Al 和 Ag 膜在750—950nm 范围内具有相当强烈的吸光作用;在 D/M 膜系中,金属(M)膜层愈厚,光谱吸光度愈大。介质(D)膜的性质对于光谱吸光特性有密切的关系。一般说来,当介质膜厚度相等时,膜系吸光度的光谱选择度相同。通过对 D/M 膜系的光谱透过率、光谱吸光度和色度的研究,可望开拓适用干节能和新能源的新型材料。     

制备工艺参数对TiNx/Ag/TiNx低辐射膜性能的影响

采用射频磁控溅射法在玻璃基片上沉积了TiNx/Ag/TiNx低辐射膜,研究了制备工艺参数对低辐射膜光学性能的影响以及低辐射膜的耐腐蚀性能.结果表明,TiNx薄膜可对膜系起到很好的保护作用,当膜系的TiNx保护层厚度为32nm、内层TiNx膜厚为16nm(氮气流量为55sccm)、Ag层厚度为16nm时,制备的低辐射膜系具有优良的透过率、低辐射性能和耐腐蚀性能.     

膜层厚度对CuPc／ZnS多层复合薄膜光电性能的影响

为了找到制备CuPc/ZnS多层复合膜薄膜最佳光电导性能的参数,本文研究了CuPc/ZnS多层复合膜的CuPc膜层的厚度系列、ZnS膜层的厚度系列的光电导性能和结构,利用表面电位衰减仪、紫外－可见光谱仪和X射线衍射仪等设备分析了复合薄膜的光电导性能和结构及其关系,探讨了改变CuPc、ZnS膜层的厚度对CuPc/ZnS多层复合膜薄膜的光电导性能和结构的影响。     

膜层厚度对CuPc/ZnS多层复合薄膜光电性能的影响

为了找到制备CuPc ZnS多层复合膜薄膜最佳光电导性能的参数 ,本文研究了CuPc ZnS多层复合膜的CuPc膜层的厚度系列、ZnS膜层的厚度系列的光电导性能和结构 ,利用表面电位衰减仪、紫外 -可见光谱仪和X射线衍射仪等设备分析了复合薄膜的光电导性能和结构及其关系 ,探讨了改变CuPc、ZnS膜层的厚度对CuPc ZnS多层复合膜薄膜的光电导性能和结构的影响     

CuPc／ZnS多层复合薄膜的制备及光电性能的研究

为了找到制备具有最佳光电导性能的CuPc/ZnS多层复合薄膜的工艺参数，研究了CuPc/ZnS多层复合膜的层数系列、CuPc膜层的厚度系列、ZnS膜层的厚度系列和基板温度系列的光电导性能和结构。利用表面电位衰减、紫外－可见光谱和X射线衍射分析了复合薄膜的光电导性能和结构及其关系，探讨了改变复合膜层数、CuPc膜层和ZnS膜层的厚度以及基板温度对CuPc/ZnS多层复合薄膜的光电导性能和结构的影响。     

某些D/M非对称膜系的透光特性

透明薄膜是一种光谱选择性材料,探明该膜系的光谱选择度,对于开发新型能源材料具有重要意义。作者研究了在 Al 和 Ag 基膜上分别沉积 SiO,SnO_2,CeO_2,ZnS 和 CdS 介质膜,组成 D/M 非对称膜系,测定了它们在320—1000nm 波长范围内的光谱透过率。证明各种介质膜对于金属基膜光谱选择度的影响基本相似,但对于透过率峰值的影响却明显不同;一般说来,介质膜对于 Ag 膜的光谱透过率会产生较大的增益,而且介质膜愈厚,增透性愈好。实验结果表明,采用 D/M 非对称膜系,有可能研制出光谱选择度满意的透明热反射镜材料。     

AZO透明导电薄膜光电性能的研究进展

掺铝氧化锌(AZO)薄膜其原料来源广、经济无毒,且具有优越的光电性能,可以与传统铟锡氧化物(ITO)薄膜相媲美,是优良的透明导电材料。目前,关于各制备工艺参数对AZO薄膜的影响规律及其影响机理仍是研究热点。综述了透明导电AZO薄膜光学与电学性能的研究进展,讨论了各制备工艺条件对薄膜性能的影响,分析了AZO/metal/AZO多层膜的研究现状,并对AZO薄膜的研究方向给予了展望。     

可调的透明导电膜研究进展

简述了透明导电薄膜材料,特别是对目前研究比较活跃的透明导电氧化物（TCO）及金属基复合透明导电多层膜的发展现状和趋势;同时从选材、膜层设计、制备方法到工艺制定,研究透明导电膜光电性能诸多影响因素和规律,探讨D／M／D多层膜的微观结构与其光电性能的内在联系,以及多层膜的热稳定性和界面反应等问题,并采用电介质TiO2与金属Ag交替生成TiO2／Ag／TiO2三明治结构制备了几种具有优异光电性能的透明导电膜。经优化设计的纳米多层膜具有奇特的光电性能可调性,根据需要,用于平面显示器透明电极、太阳能电池板等的在可见光区具有高的透过率（T550≥90％）和在红外光区高的反射率（R2500≥90％）,其方块电阻仅为～5Ω／sq;而用于紫外固化的则在紫外固化的主峰365 nm处具有高的透射率（T365≥80％）,而在1600 nm的红外波段反射率也超过了90％。     

The effect of annealing on structural, electrical and optical properties of nanostructured ZnS/Ag/ZnS films

In this paper a ZnS/Ag/ZnS (ZAZ) nano-multilayer structure is designed theoretically and optimum thicknesses of ZnS and Ag layers are calculated at 35 and 17 nm, respectively. Several conductive transparent ZAZ nano-multilayer films are deposited on a glass substrate at room temperature by thermal evaporation method. Changes in the electrical, structural, and optical properties of samples are investigated with respect to annealing in air at different temperatures. High-quality nano-multilayer films with the sheet resistance of 8 Ω/sq and the optical transmittance of 83% at 200 °C annealing temperature are obtained. The figure of merit is applied on the ZAZ films and their performance as transparent conductive electrodes are determined.     

Influence of Ag thickness on electrical, optical and structural properties of nanocrystalline MoO3/Ag/ITO multilayer for optoelectronic applications

In this study, MoO₃/Ag/ITO/glass (MAI) nano-multilayer films were deposited by the thermal evaporation technique and then were annealed in air atmosphere at 200 °C for 1 h. The effects of Ag layer thickness on electrical, optical and structural properties of the MoO₃(45 nm)/Ag(5-20 nm)/ITO(45 nm)/glass nano-multilayer films were investigated. The sheet resistance decreased rapidly with increasing Ag thickness. Above a thickness of 10 nm, the sheet resistances became somewhat saturated to a value of 3(Ω/□). The highest transparency over the visible wavelength region of spectrum (85%) was obtained for 10 nm Ag layer thickness. Carrier mobility, carrier concentrations, transmittance and reflectance of the layers were measured. The allowed direct band-gap for an Ag thickness range 5-20 nm was estimated to be in the range 3.58-3.71 eV. The XRD pattern showed that the films were polycrystalline. X-ray diffraction has shown that Ag layer has a (111) predominant orientation when deposited. The figure of merit was calculated for MAI multilayer films. It has been found that the Ag layer thickness is a very important factor in controlling the electrical and optical properties of MAI multilayer films. The optimum thickness of the Ag layer for these films was determined. The results exhibit that the MAI transparent electrode is a good structure for use as the anode of optoelectronic devices.     

Ag层厚度对AZO/Ag/AZO透明导电薄膜性能的影响

在室温条件下,采用磁控溅射技术在玻璃衬底上生长了AZO/Ag/AZO多层透明导电薄膜。主要研究了Ag层厚度对多层透明导电薄膜结构和性能的影响。研究表明,AZO和Ag分别延(002)面和(111)面高度择优生长,随着Ag层厚度的增加,多层透明导电薄膜的电阻率不断降低,透过率呈现先降低再增加最后再降低的变化趋势,其中Ag层厚度为8nm的样品获得最大品质因子33.1×10^-3Ω^-1,综合性能最佳。     

Improving efficiency of organic light-emitting diodes fabricated utilizing AZO/Ag/AZO multilayer electrode

Multilayer transparent electrode based on Al-doped zinc oxide (AZO)/Ag/Al-doped zinc oxide (AZO) was fabricated by sputtering, and a green organic light-emitting diode (OLED) device utilizing AZO/Ag/AZO as anode was fabricated. The AZO/Ag/AZO multilayer film exhibited superior square resistance and optical transmittance to those of commercial indium tin oxide (ITO). In comparison with the green OLEDs based on ITO and pure AZO anode, the green OLED based on AZO/Ag/AZO showed the highest light-emitting efficiency. The results indicate that AZO/Ag/AZO multilayer electrodes are a promising low-cost, low-toxic and low-temperature processing electrode scheme for OLED application.     

Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

We have investigated the effect of electron beam irradiation as well as insertion of a Ag layer on the electrical and optical properties of the ITO or IZO films. The results show that electron beam irradiation as well as inserting a very thin Ag layer can significantly reduce sheet resistance of the ITO/Ag/ITO and IZO/Ag/IZO films. The electron beam irradiation also increases light transmittance and optical band gap of the ITO/Ag/ITO multilayer films; meanwhile, it has not influence on the transmittance of the IZO/Ag/IZO films. These results can be explained by that In and Zn cation in IZO film have strong tendency to preserve their coordination with oxygen.     

Transparent conductive film having sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide

New transparent conductive films having the sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide (GIO/Ag/GIO) were prepared by conventional magnetron sputtering method at ambient substrate temperature. The electrical and optical properties of the films were compared with those of conventional indium-tin-oxide (ITO) films and ITO/Ag/ITO sandwich films. The GIO/Ag/GIO (40 nm/8 nm/40 nm) sandwich films, in which the GIO film was deposited using a GIO ceramic target with In content [In/(Ga + In)] of 10 at.%, exhibited a low sheet resistance of 11.3 Ω/sq and a large average transmittance of over 92.9% in the visible region (400-800 nm). This GIO/Ag/GIO films also exhibited a novel characteristic of transparency in the ultraviolet region; they showed high transmittance of 82.2% at the wavelength of 330 nm and 40.8% at the wavelength of 280 nm, which was not shown in the ITO films and the ITO/Ag/ITO sandwich films. The GIO/Ag/GIO sandwich films are useful as transparent electrode for emitting devices of ultraviolet radiation because of both their high conductivity and high transparency in the ultraviolet region.     

Improved electrical and optical properties of ITO/Ag/ITO films by using electron beam irradiation and their application to ultraviolet light-emitting diode as highly transparent p-type electrodes

We have investigated the effect of insertion of a Ag layer in ITO film as well as electron beam irradiation to the multilayer films on the electrical and optical properties of the ITO-based multilayer deposited by magnetron sputtering method at room temperature. Inserting a very thin Ag layer between ITO layers resulted in a significant decrease in sheet resistance and increased the optical band gap of the ITO/Ag/ITO multilayer to 4.35 eV, followed by a high transparency of approximately 80% at a wavelength of 375 nm. We have also fabricated ultraviolet light-emitting diodes (LED) by using the ITO/Ag/ITO p-type electrode with/without electron beam irradiation. The results show that the UV-LEDs having ITO/Ag/ITO p-electrode with electron beam irradiation produced 19% higher optical output power due to the low absorption of light in the p-type electrode.     

A study of photoconductive properties of vacuum-sublimated copper-phthalocyanine/zinc sulphide multilayer films

Copper-phthalocyanine (CuPc)/zinc sulphide (ZnS) multilayer films were prepared by vacuum-sublimation. X-ray diffraction, optical absorption spectra and photoconductive properties were measured for the multilayer films. The results showed that the photoconductive properties of the CuPc/ZnS multilayer films were better than that of the CuPc film. The effects of the pair number on the photoconductive properties of the multilayer films were studied. It was found that three-pair CuPc/ZnS multilayer film had the best photoconductive properties with the light sensitivity S=100 lx s and residual potential V_R=17 V.     

Ultrathin metal layer, ITO film and ITO/Cu/ITO multilayer towards transparent antenna

The authors have investigated radioelectrical performances of monopole antennas fabricated from transparent conducting films. Ultrathin copper layer, Indium Tin Oxide (ITO) film and ITO/Cu/ITO multilayer have been deposited by r.f. sputtering. For each sample, sheet resistance, optical transparency, radioelectrical performances have been evaluated and discussed. This research shows that multilayer technology is suitable for UHF band applications.     

High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature

We have fabricated, by simultaneous DC and RF magnetron sputtering, multilayer transparent electrodes having much lower electrical resistance than the widely used transparent conductive oxide electrodes. The multilayer structure consists of three layers (ZnO/Ag/ZnO). Ag films with different film thickness were used as metallic layers. Optimum thicknesses of Ag and ZnO films were determined for high optical transmittance and good electrical conductivity. Several analytical tools such as spectrophotometer, atomic force microscopy, scanning electron microscopy and four-point probe were used to explore the possible changes in electrical and optical properties. A high quality transparent electrode, having resistance as low as 3 Ω/sq and high optical transmittance of 90% was obtained at room temperature and could be reproduced by controlling the preparation process parameters. The electrical and optical properties of ZnO/Ag/ZnO multilayers were determined mainly by the Ag film properties. The performance of the multilayers as transparent conducting materials was also compared using a figure of merit.