含硅聚酰亚胺的发展现状

近年来各种含硅聚酰亚妥相继开发,它既保持了聚酰亚胺的耐热及电气性能,又具有有机硅的溶解性,良好的粘接性及低吸湿性。其主要用于微电子工业,宇航及印刷线路工业等。本文侧重介绍了聚硅氧烷－聚酰亚胺嵌段共聚物。     

高阻隔聚酰亚胺的研究进展

聚酰亚胺是一类高性能的功能材料,广泛应用于航天、航空、微电子等高科技领域。由于其耐高温、高强度、高模量、高抗蠕变、高尺寸稳定、低热膨胀系数、耐辐射、耐腐蚀等优点能很好的满足OLED封装材料的高要求,是柔性OLED衬底或封装材料的最佳选择之一。介绍了OLED对衬底/封装材料的要求,概述了聚酰亚胺的性能及目前高阻隔聚酰亚胺的研究现状,展望了高阻隔聚酰亚胺材料的发展趋势。     

可溶性聚酰亚胺制备研究进展

根据分子设计思路的不同,分别从分子主链引入柔性基团、大的侧基、非共平面结构、含氟基团、不对称结构,共聚以及制备超支化聚酰亚胺等7个方面介绍了近年来制备可溶性聚酰亚胺的研究进展,并在分子水平上讨论了各方法能够改善聚酰亚胺溶解性的原因。     

聚酰亚胺增韧改性研究进展

综述了国内外近几年对聚酰亚胺(PI)增韧的研究进展,对超支化增韧、柔性基团增韧、二胺二酐增韧及结构改性进行了概述。超支化分子具有高度支化的三维立体结构和更多的端基,可降低分子链的纠缠;柔性基团可提高分子链的柔顺性,两者均可提高材料的韧性;设计合成新型二胺二酐可用于改善PI的韧性;破坏原来分子链的结构,可降低分子链与苯环间的共轭,提高PI的韧性;对今后的研究方向和趋势进行了展望：分别将超支化与柔性基团和二胺二酐结合,协同增韧PI。     

Polyimides from diamines and dianhydrides

Novel polyimides have been synthesized by reacting 3,3′,4,4′-benzophenone tetracarboxylic acid dianhydride with three diamines having the general structure: Polyimide films obtained have been evaluated for their thermal and electrical properties. The dependence of the thermal stability of the polyimides on the structure of the diamine component has been established. The specific volume resistivity has been found to be of the order of 10¹⁵ Ω cm for all the polyimides.     

聚酰亚胺的研究进展及应用

本文简单介绍了聚酰亚胺的合成及改性的研究,同时也介绍了聚酰亚胺在航空、航天以及电子领域的应用进展。     

X-ray lithography

The advent of X-ray lithography as a natural compliment to electron beam pattern generation and photolithography seems to be filling a need in the fabrication of submicron devices. The X-ray technique, which is simple for single level devices, lags behind other lithographies in registration techniques. However, its proven high resolution capabilities is responsible for the increased interest in further development. At present a, variety of mask substrates are being evaluated with no one material exhibiting an overwhelming advantage. The type of substrate used is closely coupled to the permissable wavelength of the X-ray source. The X-rays used for lithography to date vary from Rh L (4Å) up to CK (44Å). Each wavelength shows a distinct advantage and disadvantage. For example, at short wavelengths substrates can be relatively massive but resists are less sensitive and high resolution masks have low contrasts. At longer wavelengths, resists are more sensitive and masks have higher contrast, but defects due to dust are more probable. The use of more than one X-ray source could fulfill the requirements imposed by mask making and device fabrication. High throughput for both masks and device require both foster resists and higher intensity X-ray sources.     

Submicron lithography in Japan

1Mbit D-RAM. the most advanced VLSI device, is realized by a high performance stepper with the conventional optical techniques. However, as the optical lithography has an inherent limit of resolution, new technologies are being developed rapidly for the development of new generation VLSI devices (4M-16Mbit D-RAM) using shorter wavelength photons of i-line. Electron beam (EB) lithography is already in practical mask making products, but the resolution limit is about 0.5 μm because of proximity effects. In order to make higher resolution and higher precision masks, high voltage EB technique is being developed to minimize the proximity effect, and fabricated 0.25 μm line and space by a single scan at 50kV. X-ray technology 1; becoming practical after a long laboratory-level study, using high performance X-ray resists (CPMS: chlorinated polymetylstylene). Focused Ion Beam (FIB) technology has been anticipated for its capability of submicron lithography due to a reduced proximity effect. High speed submicron Si MOSFET and GaAs MESFET with 0.25 μm gate have been fabricated using FIB technology. Activities of submicron lithography technology in Japan (optical stepper, EB, X-ray, and FIB) are described.     

Ferroelectric lithography

The fact that domain polarization affects the surface properties suggests a method to direct chemical reactions on ferroelectric substrates. In combination with domain manipulation at small scales, a new lithography process is developed to assemble several classes of nanostructures. Three domain patterning techniques, which employ contact electrodes, SPM and e-beam are introduced, with focus on the physical interactions between electrons and ferroelectrics. The effects of electron beam parameters on polarization reorientation are quantified and it is shown that both positive and negative polarization can be achieved depending on conditions. Potential applications of ferroelectric lithography on fabrication of complex structures are illustrated.     

聚酰亚胺的合成方法与改性

聚酰亚胺是一种重要的高性能聚合物材料,由于其优异的耐热性能、介电性能、粘附性能、耐辐射性能、力学机械性能以及很好的化学物理稳定性等,近年来在航天航空、电子电力、精密机械等高新技术领域得到了广泛的应用。本文介绍了聚酰亚胺的合成方法与改性。     

含硅聚酰亚胺的合成与性能

含硅聚酰亚胺由于具有可溶性、粘合性、吸湿性以及电绝缘性等方面的优势,近年来逐渐成为聚酰亚胺改性研究的热点。本文主要综述了近年来主链型含硅聚酰亚胺、侧链型含硅聚酰亚胺以及聚酰亚胺含硅无机复合材料的合成方法及其改性性能,并对含硅聚酰亚胺的研究发展进行了展望。     

Polyimides as precursors for artificial carbon

The pyrolysis behavior of different commercially available polyimides has been studied by means of thermoanalysis, dilatometry and analysis of the gaseous pyrolysis products. Based on the results of these measurements the chemistry of the thermal degradation is discussed. The carboneous residues have been investigated by X-ray, nitrogen adsorption and elemental analysis. The polyimides were successfully applied as binder precursor for C/C-composites.     

聚酰亚胺的合成方法及应用

综述了聚酰亚胺的主要合成方法:溶液缩聚法、熔融缩聚法、界面缩聚法和气相沉积法。探讨了聚酰亚胺在聚酰亚胺薄膜、聚酰亚胺纤维、聚酰亚胺胶黏剂和聚酰亚胺泡沫材料方面的应用研究。     

含硅聚酰亚胺的合成与性能

介绍了含硅聚酰亚胺的若干不同合成和改性方法及相应产物的性能特点.     

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

Flexible memory devices are one of the most crucial elements in the wearable electronics. In this work, polyimides (PIs)-based flexible resistive memory devices with an excellent thermal and mechanical durability are demonstrated. Four kinds of functional PIs are derived from the heterocyclic diamines including 2,6-diaminodibenzo-p-dioxin (OODA) and 2,6-diaminothianthrene, and dianhydrides including 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 3,3′,4,4′-biphenyltetracarboxylic dianhydride. PI with diamine of OODA and dianhydride of 6FDA (PI(OODA_6FDA)) possesses outstanding thermal and mechanical properties with a high glass transition temperature of 352 °C, a low coefficient of thermal expansion of 28.1 ppm K⁻¹, and a high elongation at break of 10%. In addition, PI(OODA_6FDA)-based memory shows write-once-read-many behavior with a high on/off current ratio of 10⁶ and a stable data retention, attributed to the donor–acceptor charge transfer between the polymer chains. The retained current levels at a low resistive state can be observed even with thermal treatment at 200 °C for 24 h or 1000 times cyclic bending at a bending radius of 5 mm. These results demonstrate the potential of heterocyclic PIs for flexible resistive memory.     

不同官能团对聚酰亚胺改性方法研究进展

由于聚酰亚胺骨架结构刚硬和分子链间有较强的相互作用,使其具有高熔点和软化温度,且在多数有机溶剂中的溶解性和黏结性较差等一系列缺点,限制了其应用范围。综述了卤素、杂环、杂原子、不饱和键和其他方面等五种改性类型对聚酰亚胺改性方法及对聚酰亚胺的溶解性、耐热性及热稳定性的影响。     

Polyimides containing s‐triazine rings

A series of new polyimides containing s‐triazine rings have been synthesized via Diels–Alder intermolecular polymerization of 2,6‐bis(2‐furanylmethylimino)‐4‐isopropoxy‐1,3,5‐triazine with various bis(maleimide)s. All the poly(imino‐s‐triazine imide)s were characterized by elemental analyses, FTIR spectral studies, number average molecular weight ( M _n) by non‐aqueous conductometric titration and thermogravimetry. Glass‐fibre reinforced composites were prepared via an in situ Diels–Alder intermolecular reaction between 2,6‐bis(2‐furanylmethylimino)‐4‐isopropoxy‐1,3,5‐triazine and various bis(maleimide)s. The composites were characterized for chemical resistivity and mechanical properties. © 2003 Society of Chemical Industry     

新型非对称聚酰亚胺的合成与性能研究

通过对4,4’-双(N-甲基联苯酰亚胺)的单硝化反应、亲核取代反应、水解反应和闭环脱水反应,成功合成了2-邻甲基苯氧基4,4’,5,5’-联苯四甲酸二酐。将这种新型非对称酸酐与4,4’-二氨基二苯醚和对苯二胺进行高温聚合反应制得了非对称聚酰亚胺。聚酰亚胺的特性黏度分别为0.55dL/g和0.89dL/g,它们在有机溶剂中的溶解性能较好,同时具有优良的热稳定性和热氧稳定性。     

一种不对称可溶性聚酰亚胺的制备及性能

以间氨基苯酚(m-AP)为基本原料经缩合反应制得3-氨基-4'-硝基二苯醚(ANDPE),经水合肼还原得3,4'-ODA;将此单体与均苯四甲酸二酐(PMDA)通过缩聚反应,经热亚胺化制备含不对称结构的聚酰亚胺。结果表明:ANDPE的收率达96.3%,以非水电位滴定法测得还原产物3,4'-ODA的纯度达99.4%以上;不对称结构的引入保持了3,4'-ODA/PMDA-PI的优异的耐热性能,改善了力学性能以及电学性能,显著提高了其在有机溶剂中的溶解性能,玻璃化温度降至314℃,加工性能得到明显改善。