Damping of coherent oscillations in a quantum dot photodiode

In this letter, we develop a model to describe the Rabi oscillations observed in a quantum-dot photodiode. Using a multi-level density matrix formulation, which includes multi-exciton and single particle states, we show that the damping observed in recent experiments is the result of a non-resonant excitation from or to the continuum of the wetting layer states.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Insulating state in open quantum dots and quantum dot arrays

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e²/h.     

Picosecond timescale carrier dynamics of InAs quantum dots: The role of a continuum background

We have investigated the ultrafast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots emitting at 1.3 μm by means of time resolved photoluminescence upconversion measurements with a time resolution of about 200 fs. The detection energies scan the spectral region from the energy of the quantum dot excitonic transition up to the barrier layer absorption edge. We found, under high excitation intensity, that the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.     

Voltage-controlled linewidth of excitonic transitions in a single self-assembled quantum dot

We report electron and hole tunnelling phenomena in a single self-assembled quantum dot as a function of the applied electric field. We use absorption spectroscopy which allows us to measure excitonic transitions under conditions where optical recombination cannot be observed due to the high, ionizing, electric field.     

Non-perturbative optical response of a “fluctuating” single quantum dot

We present a model that treats the inter-band optical transitions within a non-perturbative framework which incorporates .both the coherent coupling to light and the incoherent coupling to different reservoirs. It allows us to calculate the photoluminescence line shape and also to simulate its excitation experiments on actual single dots.     

Coherent spectroscopy of a strongly driven triple quantum dot molecule

Based on a calculation model,we study the interference phenomena of serially coupled V-type and Λ-type triple quantum dots (CTQDs) driven simultaneously by a strong driving field and a weak probe field.Strongly depending on the configuration of the three-level CTQD,the probe absorption spectra,which are shown in the tunneling current,exhibit various quantum coherence properties.In the case where the two pairs of transitions of the CTQD have a small eigenfrequency difference △ω,the double-coupling effect of the driving field results in two Autler-Townes doublets and one weak Mollow triplet in one spectrum.With the value of △ω increasing,only one Autler-Townes splitting remains due to the single-coupling of the field.We also find that the effect of spontaneous emission of phonons may lead to an obvious background current,which can be used to distinguish which transition is driven by the driving field in experiment.The interesting quantum property of a CTQD revealed in our results suggests its potential applications in quantum modulators and quantum logic devices.     

Eigenstate symmetry probed by biexciton transitions in a single quantum dot

The eigenstate symmetry in CdSe/ZnSe single quantum dots (SQDs) has been studied by low-temperature magnetoluminescence spectroscopy. Regarding both, the fine structure splitting and the polarization properties of the biexciton transition, the influence of exchange and Zeeman interaction on the eigenstate symmetry of the final state of recombination, the ground state of the single exciton, is investigated.     

Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields

We report on the measurements of the photoluminescence from the s-shell of a single InAs/GaAs quantum dot in magnetic fields up to 23 T. The observed multiline emission is attributed to different charge states of a single dot. Characteristic anticrossing of emission lines is explained in terms of hybridization of final states of a triply charged exciton (X⁻³).     

Single-photon detection mechanism in a quantum dot transistor

We study the transport mechanisms in a quantum dot MODFET by tuning the localization induced by charge stored on the quantum dots with light. The temperature dependence of the resistivity of a macroscopic sample reveals a hopping transport when the dots contain an excess of electrons. The resistance of a mesoscopic sample however, which is capable of detecting single photons, exhibits a much weaker dependence upon temperature. This points towards source-drain tunnelling as a transport mechanism and is confirmed by a statistical analysis of the single-photon-induced conductance steps. The complexity of the conducting paths increases as the average hopping length reduces.     

Coupling effects on Rabi oscillations in quantum dots chains

In this work, we calculate the temporal evolution of electronic states under AC electric fields. We do that by obtaining the eigenenergies and wave functions of states of the first two minibands for arrays of 10 cylindrical quantum dots, both vertically and laterally coupled, which exhibit notable difference in their symmetry levels and coupling magnitudes. We observe an important dependence of the Rabi amplitude on the wave function symmetry and the coupling magnitude, and conclude that Rabi oscillations at the terahertz range are best suited for the higher coupling between dots.     

Magnetoconductance of a few-electron open quantum dot

Magnetoconductance of a small open lateral dot is studied both theoretically and experimentally for the conditions when the dot contains down to 15 electrons. We confirm the existence of a new regime for open dots in which the transport through the structure occurs through individual eigenstates of the corresponding closed dot. In particular, at low magnetic fields the characteristic features in the conductance are related to the underlying eigenspectrum shells. When the number of modes in the leads is reduced more detailed structures within the shells due to single eigenlevels becomes discernible. At higher fields Landau level condensation is evident as well as the crossing of levels collapsing to the different Landau levels.     

Giant optical anisotropy in single InAs quantum dots

We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization-resolved photoluminescence spectroscopy in single QDs reveals a linear polarization ratio which fluctuates, from one dot to another, in sign and in magnitude with absolute values up to 82%. We do not observe any dependence of the linear polarization on incident power and temperature.     

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence(RF) from single In As quantum dots(QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He–Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond(ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.     

Linear and nonlinear optical properties in a disk-shaped quantum dot with a parabolic potential plus a hyperbolic potential in a static magnetic field

Linear and nonlinear optical properties in a disk-shaped quantum dot (DSQD) with a parabolic potential plus a hyperbolic potential in a static magnetic field are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy levels and the wave functions of an electron are obtained by three kinds of approximation methods. It is found that optical absorption coefficients and refractive index changes are not only by the characteristic parameters of the hyperbolic potential and the confinement frequency, but also by the magnetic field.     

Coherent optical spectroscopy due to lattice vibrations in a single quantum dot

We theoretically investigate a coherent optical spectroscopy of a strongly driven quantum dot without and with the coupling between exciton and phonons. In the absence of this coupling, we achieve the experimental results obtained by Xu et al. [Science 317, 929 (2007)]. However, while taking this coupling into account, we observe some new features in the probe absorption spectrum including two sharp phonon-induced sidebands. Our results also demonstrate that the lifetime of phonons will play an important role in this coherent spectroscopy.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Vibrational spectroscopy of InAs and AlAs quantum dot structures

In this paper we present an experimental comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QDs) by means of infrared and Raman spectroscopies. The first observation of optical phonons localized in InAs and AlAs QDs using infrared spectroscopy is demonstrated. Confined optical phonon frequencies of the QDs measured by means of Raman scattering are compared with those deduced from the analysis of infrared spectra performed in the framework of the dielectric function approximation.     

Spin-flip effects in a parallel-coupled double quantum dot molecule

We investigate theoretically the electronic transport through a parallel-coupled double quantum dot (DQD) molecule attached to metallic electrodes, in which the spin-flip scattering on each quantum dot is considered. Special attention is paid to the effects of the intradot spin-flip processes on the linear conductance by using the equation of motion approach for Green’s functions. When a weak spin-flip scattering on each quantum dot is present, the single Fano peak splits into two Fano peaks, and the Breit–Wigner resonance may be suppressed slightly. When the spin-flip scattering strength on each quantum dot becomes strong, the linear conductance spectrum consists of two Breit–Wigner peaks and two Fano peaks due to the quantum interference effects. The positions and shapes of these resonant peaks can be controlled by using the magnetic flux through the quantum device.