太阳电池铸造多晶硅材料的结构缺陷及其控制

铸造多晶硅具有高的性价比,已成为主要的光伏材料,其晶体内的结构缺陷显著影响太阳电池的转换效率。综述了传统铸造多晶硅太阳电池材料和新型黑硅太阳电池材料的研究进展,同时阐述了控制多晶硅中的杂质、晶界、位错的途径及方法。     

薄膜太阳电池用TCO薄膜制造技术及其特性研究

阐述了玻璃衬底、柔性衬底透明导电氧化物薄膜(Transparent conductive oxides-TCO)以及硅基薄膜太阳电池应用方面的最新研究成果。绒面结构可以提高薄膜太阳电池效率和稳定性并降低生产成本。磁控溅射技术和LP-MOCVD技术是制造绒面结构ZnO-TCO薄膜(例如"弹坑"状和"类金字塔"状表面)的主流生长技术;高迁移率TCO薄膜(IMO、IWO、ZnO∶Ga等)以及柔性衬底TCO薄膜是研究开发的重点。     

玻璃基片硅薄膜太阳电池的制备与研究现状

硅薄膜太阳电池已成为太阳电池研究的一个热点.主要阐述了玻璃基片硅薄膜太阳电池的制备方法以及研究进展,提出了影响发展的几种因素以及在以后的研究中需重点解决的问题.     

钙钛矿相有机金属卤化物太阳电池研究进展与展望

钙钛矿相有机金属卤化物太阳电池是以钙钛矿相有机金属卤化物作为吸光材料的薄膜太阳电池,因制备工艺简单、成本低廉、能量回报周期短以及光电转换效率高等优点而备受科学家的青睐。在钙钛矿相有机金属卤化物太阳电池研究发展的短短5年时间内,其光电转换效率已从最初的3.8%迅速上升到20%以上,超过了非晶硅、染料敏化、有机太阳电池等新一代薄膜电池历经10多年研究的成果。为了进一步提升效率,以期获得实际应用,钙钛矿相有机金属卤化物太阳电池的工作机制、新材料、温和制备工艺和稳定性是研究者们最为关注的研究方向。解决这些问题,对钙钛矿相有机金属卤化物太阳电池今后的发展起着指导和借鉴作用。介绍了钙钛矿相有机金属卤化物太阳电池的结构及其工作原理,对国内外钙钛矿相有机金属卤化物太阳电池的研究进行了总结和分析,指出了目前钙钛矿相有机金属卤化物太阳电池研究的不足,并对其未来的研究提出了一些建议。     

有机共混结构太阳电池的稳定性

有机共混结构太阳电池由于质轻、价廉、柔性,受到人们的广泛关注。随着有机共混结构太阳电池的能量转换效率的不断提高,其性能的稳定性也受到人们的重视。文中从太阳光、空气中的氧气和水分等因素对有机共混结构太阳电池的电极、活性层等的作用来说明这些因素对有机共混结构太阳电池稳定性的影响,阐述了影响有机太阳电池稳定性的原因,提出了解决有机共混结构太阳电池稳定性的方法,为高性能、高稳定性的有机共混结构太阳电池的研究提供有价值的参考。     

硅纳米晶体在太阳电池中的应用

硅纳米晶体的电子和光学特性使其在改善太阳电池的性能方面扮演着重要角色。目前,硅纳米晶体在太阳电池中应用的主要方式有利用纯硅纳米晶体薄膜制作太阳电池、硅纳米晶体与无机(氧化硅、氮化硅或碳化硅等)或有机(P3HT)薄膜基质结合构成复合结构太阳电池、硅纳米晶体与碳纳米结构(富勒烯或单壁碳纳米管)结合形成复合结构、硅纳米晶体与传统的染料敏化太阳电池结合、利用硅纳米晶体的减反射或下转换作用将硅纳米晶体与体硅太阳电池结合。硅纳米晶体也有可能在新概念太阳电池如多激子太阳电池、中间带太阳电池和热载流子太阳电池中得到应用。     

极富发展前景的多晶硅薄膜太阳电池

太阳能光伏发电具有的许多特征使其对未来能源非常重要,正在形成一门新兴的产业,但达到大规模地面应用需要解决提高光电转换效率和降低成本这两大难题。多晶硅薄膜太阳电池能在廉价衬底上制备,成本远低于晶体硅太阳电池,转换效率可接近晶体硅太阳电池,并且具有光电性能稳定的特点。国内外光伏界都投入了大量的人力物力研究开发多晶硅薄膜太阳电池,取得了可喜的进展。     

钙钛矿太阳电池廉价新材料有望面世

正廉价的空穴传输材料的提出和利用降低了钙钛矿电池的成本,提高了电池的稳定性,为钙钛矿太阳电池的大规模生产提供了技术借鉴。随着钙钛矿太阳电池技术的发展,目前其最高光电转换效率已超过15%,高于新一代薄膜太阳电池的效     

基于对氯苄胺的2D/3D钙钛矿太阳能电池

三维(3D)有机–无机金属卤化物钙钛矿薄膜的表面和晶界处存在大量缺陷,容易导致载流子的非辐射复合并加快3D钙钛矿分解,进而影响钙钛矿太阳能电池(PSCs)能量转换效率(PCE)及稳定性.本研究通过引入对氯苄胺阳离子,与3D钙钛矿薄膜及其表面过剩的碘化铅反应后原位形成了二维(2D)钙钛矿,实现了对3D钙钛矿薄膜表面和晶界...     

铜锌锡硫薄膜太阳电池及其研究进展

近些年,人们越来越关注太阳辐射的光伏利用。光伏发电技术在迅猛发展,薄膜太阳电池从占有主导地位的硅晶片技术中抢占了一定的市场份额。其中铜锌锡硫薄膜太阳电池因具有低成本、高的光电转化效率和吸收系数、合适的禁带宽度和环境友好等优点成为近年来薄膜太阳电池研究的热点。本文阐述了铜锌锡硫薄膜太阳电池的器件结构和性能特点,介绍了铜锌锡硫薄膜太阳电池的制备方法和研究进展,并对今后主要的发展方向进行了展望。     

Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

Thin films of Cu(In,Ga)Se₂ (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process.In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects.For the interpretation of the results two defect models are taken into account.     

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se₂ (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 μm were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects.     

Effects of RF power and pressure on performance of HF-PECVD silicon thin-film solar cells

High-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) is a widely applicable method of deposition over a large area at a high rate for fabricating silicon thin-film solar cells. This investigation presents the properties of hydrogenated amorphous silicon (a-Si:H) films and the preparation of highly-efficient p-i-n solar cells using an RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells on the properties and mechanism of growth of the a-Si:H thin films and the solar cells is studied. The a-Si:H thin films prepared under various deposition conditions have widely varying deposition rates, optical-electronic properties and microstructures. When the deposition parameters were optimized, amorphous silicon-based thin-film silicon solar cells with efficiency of 7.6% were fabricated by HF-PECVD. These results are very encouraging for the future fabrication of highly-efficient thin-film solar cells by HF-PECVD.     

Carbon nanotube arrays for optical design of amorphous silicon solar cells

Effective light trapping is essential for the conversion efficiency increase in thin film solar cells. Vertically aligned multiwalled carbon nanotubes (MWNTs) arrays with proper spacing form an ideal light trapping structure. In this work, we have demonstrated feasibility of the incorporation of MWNTs as back contact into amorphous silicon solar cells. Intrinsic amorphous silicon films were uniformly deposited onto vertically aligned MWNTs arrays. Scanning Electron Microscopy (SEM) was used to investigate the surface morphology of our films. The film surface area exposed to light was found to be increased dramatically due to the high-aspect ratio of MWNTs. Our findings open up a new way of managing light in thin film silicon solar cells by controlling the nano-geometry of MWNTs on substrates.     

钙钛矿薄膜缺陷调控策略在太阳能电池中的应用

研究钙钛矿晶体缺陷对于推动钙钛矿太阳能电池的发展至关重要.缺陷不仅会引起大量非辐射复合,而且会造成器件稳定性下降.为降低材料缺陷对光伏性能的影响,有必要深入了解钙钛矿薄膜缺陷的种类及抑制方法.根据电子特性,缺陷可分为富电子缺陷和缺电子缺陷.利用Lewis酸碱理论,富电子缺陷可以被Lewis酸钝化,而缺电子缺陷可以被Le...     

晶体硅太阳电池光衰减现象研究的新进展

晶体硅太阳电池一直占据光伏市场的主导地位,关于其光衰减的研究也因此受到了广泛关注。综合评述了近年来国内外晶体硅太阳电池光衰减现象的研究进展,介绍了硼氧缺陷、铁硼对以及铜相关的缺陷导致光衰减的基本机制,着重阐述了硼氧缺陷的产生率、钝化率以及相应的激活能大小与硼氧含量的关系。最后介绍了减弱或避免光衰减的一些措施。     

Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films

We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si) films deposited on Cr-coated glass substrates. High-pressure water-vapor annealing (HPWVA) is effective to improve the minority carrier lifetime of poly-Si films up to 10 µs long. Diode and solar cell characteristics can be seen only in the solar cells formed using poly-Si films after HPWVA, indicating the need for defect termination. The actual solar cell operation demonstrated indicates feasibility of using poly-Si films formed through FLA on glass substrates as a thin-film solar cell material.     

Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)

Bismuth‐based compounds have recently gained increasing attention as potentially nontoxic and defect‐tolerant solar absorbers. However, many of the new materials recently investigated show limited photovoltaic performance. Herein, one such compound is explored in detail through theory and experiment: bismuth oxyiodide (BiOI). BiOI thin films are grown by chemical vapor transport and found to maintain the same tetragonal phase in ambient air for at least 197 d. The computations suggest BiOI to be tolerant to antisite and vacancy defects. All‐inorganic solar cells (ITO|NiO_x|BiOI|ZnO|Al) with negligible hysteresis and up to 80% external quantum efficiency under select monochromatic excitation are demonstrated. The short‐circuit current densities and power conversion efficiencies under AM 1.5G illumination are nearly double those of previously reported BiOI solar cells, as well as other bismuth halide and chalcohalide photovoltaics recently explored by many groups. Through a detailed loss analysis using optical characterization, photoemission spectroscopy, and device modeling, direction for future improvements in efficiency is provided. This work demonstrates that BiOI, previously considered to be a poor photocatalyst, is promising for photovoltaics.     

Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp annealing (FLA) of amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Crystallinity of the ngp-Si films can be controlled by changing lamp irradiance. Secondary ion mass spectroscopy (SIMS) profiles of dopants in the ngp-Si films after FLA shows no serious diffusion. A minority carrier lifetime of over 5 μs is observed from these ngp-Si films after defect termination process using high pressure water vapor annealing (HPWVA), showing possibility of application for high-efficient thin film solar cells.