共查询到17条相似文献,搜索用时 125 毫秒
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基态施主能级分裂因素被引入了SiC基MOS电容模型。考虑到能级分裂后,电容C-V特性曲线平带附近的Kink效应,得到有效减弱;并且能级分裂对C-V特性的影响,随掺杂浓度的增加和温度的降低而增强,同时也与杂质能级深度相关。对于耗尽区和弱积累区,由于能级分裂的影响,电容的表面电荷面密度将分别有所增加和降低。 相似文献
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在半导体材料中,谷轨道耦合作用使得施主能级发生分裂(Valley-orbit splitting)。通过引进电子在分裂能级上的配分函数和综合平均能量增量,得到了适用于施主能级分裂的分布函数。利用新得到的分布函数对掺As的Si和含N的6H-SiC进行最小二乘曲线拟合,得到的杂质热电离能与光电离能完全吻合。 相似文献
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《固体电子学研究与进展》2017,(3)
位于SiO_2/SiC界面处密度较高的陷阱,不仅俘获SiC MOSFET沟道中的载流子,而且对沟道中的载流子形成散射、降低载流子的迁移率,因而严重影响了SiC MOSFET的开关特性。目前商业化的半导体器件仿真软件中迁移率模型是基于Si器件开发,不能体现SiO_2/SiC界面处的陷阱对沟道中载流子的散射作用。通过引入能正确反映界面陷阱对载流子作用的迁移率模型,利用半导体器件仿真软件研究了界面陷阱对SiC MOSFET动态特性的影响。结果表明,随着界面陷阱密度的增加,SiC MOSFET开通过程变慢,开通损耗增加,而关断过程加快,关断损耗减小;但是由于沟道载流子数量的减少、导通电阻的增加,总损耗是随着界面陷阱密度的增加而增加。 相似文献
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《固体电子学研究与进展》2016,(5)
通过二维数值模拟的方法,研究了短沟道器件中不同位置的界面电荷对pMOS器件阈值电压的影响。把pMOS器件栅氧化层等分成不同的区域,随即可以在不同的区域设置不同的界面电荷,从而很好地模拟了器件界面电荷处于不同位置时阈值电压漂移的变化情况,并同时考虑了不同漏极偏置的影响;为了探究其变化机制,还提取和比较了一些特殊情况下器件的表面势。这些研究有助于明确器件哪些位置的界面电荷对阈值电压漂移影响更大,这对深刻理解带漏极偏置的负偏压温度不稳定性效应有一定的帮助和促进。 相似文献
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《固体电子学研究与进展》2018,(2)
研究了一种霍尔迁移率在片测试方法,通过在片测量反型层电荷密度ns和反型层方块电阻Rs得到反型层载流子的霍尔迁移率。通过在待测芯片上固定一个环形磁体获得一个高强度磁场,并且测试磁体与芯片距离和磁场强度的关系。讨论了反型层电荷密度ns和反型层方块电阻Rs的测试原理和方法,采用多次测量求导的办法,消除了霍尔电压测试过程中由于样品制备和测试系统的原因引入漂移电压,提高了测试精度。基于该方法完成测试平台搭建,并应用该测试平台完成了对SiC MOSFET样品霍尔迁移率的测试,得到了霍尔迁移率随栅极电压变化的关系。 相似文献
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组分和热历程对LEC GaAs中深施主能级(EL2)的影响 总被引:1,自引:0,他引:1
用红外吸收的方法测量了不同组分的原生未掺杂LEC GaAs晶锭不同部位EL2浓度([EL2]),并用热处理后快速冷却的方法模拟晶体生长后冷却过程中的不同阶段,测量分析了各阶段[EL2]的变化.在实验结果的基础上对EL2生成过程及影响其生成的因素进行了讨论. 相似文献
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J. Banqueri F. Gámiz J. E. Carceller P. Cartujo J. A. López-Villanueva 《Journal of Electronic Materials》1993,22(9):1159-1163
The electron inversion-layer mobility in a metal oxide semiconductor field effect transistor, as a function of the transverse
electric field, has been studied in the temperature range 13–300K for different interface-state densities. Experimental data
are in excellent agreement with a simple semi-empirical model. However, the term attributed by other authors to phonon scattering
depends on the interface-state density, even at high temperatures, and becomes negative at low temperatures. These facts are
shown to be a consequence of the dependence of coulomb scattering on the transverse electric field. 相似文献
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建立了两种碳化硅(SiC)器件JFET和MOSFET的失效模型.失效模型是在传统的电路模型的基础上引入了额外附加的泄漏电流,其中,SiC JFET是在漏源极引入了泄漏电流,SiC MOSFET是在漏源极和栅极引入了泄漏电流;同时,为了体现温度和电场强度与失效的关系,用与温度和电场强度相关的沟道载流子迁移率代替了传统电路模型所采用的常数迁移率.有关文献的实验结果和半导体器件的计算机模拟(Technology Computer Aided Design,TCAD)验证了两种SiC器件失效模型的准确性.所建立的失效模型能够对比SiC JFET和SiC MOSFET的短路特性. 相似文献
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文章研究了SiC中杂质非完全离化对器件性能的影响.通过考虑场致离化效应,分析了空间电荷区电荷密度与表面势的关系,得出在SiC MOSFET反型条件下,可近似认为杂质完全离化.在此基础上,模拟了4H-SiC MOSFET的漏电流-栅压曲线和迁移率-栅压曲线.模拟结果与实验数据非常吻合. 相似文献
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Zhuo Kang Haonan Si Suicai Zhang Jing Wu Yu Sun Qingliang Liao Zheng Zhang Yue Zhang 《Advanced functional materials》2019,29(15)
Photoelectrochemical water splitting via consumption of solar energy is considered an alternative approach to address both fossil resource and global warming issues. On the basis of the bottom‐up technique, major strategies have been developed to enrich the complexity of nanostructures by incorporating various functional components to realize outstanding photoelectrochemical (PEC) performance for hydrogen evolution, such as high solar‐to‐hydrogen efficiency and long‐term stability. In such a PEC system, each nanomaterial component individually, and more importantly, together with the formed interfaces, contributes to PEC performance elevation. Specifically, the two types of interfaces that have emerged, i.e., the interfaces between photoelectrodes and electrolytes (solid–liquid contact) and the interfaces inside photoelectrodes (solid–solid contact), have both been effectively engineered to facilitate charge separation and transportation and even enhance the antiphotocorrosion properties. A comprehensive understanding, summary, and review of such interface engineering protocols may provide novel and effective approaches for PEC system designing. 相似文献
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Enhanced Water‐Splitting Performance of Perovskite SrTaO2N Photoanode Film through Ameliorating Interparticle Charge Transport 下载免费PDF全文
Yujiao Zhong Zhaosheng Li Xin Zhao Tao Fang Huiting Huang Qinfeng Qian Xiaofeng Chang Peng Wang Shicheng Yan Zhentao Yu Zhigang Zou 《Advanced functional materials》2016,26(39):7156-7163
Here SrTaO2N has been found to exhibit photoelectrochemical water splitting, with a theoretical solar‐to‐hydrogen efficiency of 14.4%. Ameliorating the interparticle charge transport by H2 annealing, the solar photocurrent of the SrTaO2N(H) granular film at 1.23 V versus reversible hydrogen electrode (RHE) is increased by ≈250% in comparison with the SrTaO2N film. Using an aberration corrected scanning transmission electron microscope and super‐X energy dispersive spectroscopy, the atomic scale observation has proved a decrease of oxygen concentrations in the surface of SrTaO2N(H) particle, which may allow its electrical conductivity to be increased from 0.77 × 10?6 to 2.65 × 10?6 S cm?1 and therefore the charge separation efficiency has been greatly increased by ≈330%. After being modified by Co–Pi water oxidation catalyst, the SrTaO2N(H) photoanode shows a solar photocurrent of 1.1 mA cm?2 and an incident photo‐to‐current efficiency value of ≈20% at 400–460 nm and 1.23 V versus RHE, which suggests that it is a new promising photoanode material for solar water splitting. 相似文献