Crystal structures and microwave dielectric properties of low-firing Ca5Zn4-xMgxV6O24 ceramics

Ca₅Zn_4-xMg_xV₆O₂₄ (x?=?0–3) microwave dielectric ceramics with low sintering temperature were synthesized via the conventional solid-state reaction. Effects of the substitution of Mg²⁺ for Zn²⁺ on crystal structures and microwave dielectric properties were investigated. XRD and Rietveld refinement showed the solid solution single phase formed when 0?≤?x?≤?2, but a few ZnO was observed when x?=?3. Meanwhile, the lattice parameters were found to decrease monotonously with Mg content increasing. The vibration modes of Raman were confirmed and the relationship with microwave dielectric properties was analyzed. Appropriate substitution of Mg²⁺ improved the packing fraction, the cation ordering degree, and the Y-site bond valence, contributing to high Q×f and low | τ_f |. However, the ε_r reduced with the increasing content of Mg²⁺ due to the decrease of ion polarizability. Finally, the best microwave dielectric properties were achieved at x?=?2 with ε_r =?11.0, Q?×?f?=?66,365?GHz (at 10.0?GHz), and τ_f =??80.4?ppm/°C.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

The effects of dispersants on sinterability and microwave dielectric properties of Zr0.8Sn0.2TiO4 ceramics

This study investigated the effects of dispersants (deionised water and ethanol) on the sinterability, phase compositions and microwave dielectric properties of Zr_0.8Sn_0.2TiO₄ ceramics prepared by a solid-state reaction. Results showed the presence of impurity phases in low-density ceramics with ethanol as dispersant sintered from 1500?°C to 1550?°C. However, pure phase was detected in samples prepared with deionised water as dispersant when sintering temperature ranged from 1512?°C to 1550?°C. The microwave dielectric properties of the samples with deionised water significantly improved compared with those with ethanol. Thus, deionised water was suitable for preparing Zr_0.8Sn_0.2TiO₄ ceramics with a high density of approximately 98%, ε_r of 39.83, Q ×?f of 33,700?GHz and τ_f of +?3.5?ppm/°C.     

Influence of Cr3+ substitution for Mg2+ on the crystal structure and microwave dielectric properties of CaMg1-xCr2x/3Si2O6 ceramics

The CaMg_1-xCr_2x/3Si₂O₆ (0?≤?x?≤?0.1) microwave dielectric ceramics were synthesized via conventional solid state reaction. In this study, the effects of Cr³⁺ substituting for Mg²⁺ on morphology, crystal structure and microwave dielectric properties of CaMg_1-xCr_2x/3Si₂O₆ ceramics were explored. XRD diffraction patterns exhibited that the CaMg_1-xCr_2x/3Si₂O₆ ceramics possessed the pure phase of CaMgSi₂O₆ when x?≤?0.06 and a small amount of secondary phase Ca₃Cr₂(SiO₄)₃ for 0.08?≤?x?≤?0.1. SEM micrographs revealed that the substitution of Mg²⁺ with Cr³⁺ could decrease the grain size. The apparent density was affected by the concentration of Mg vacancies. The correlation between crystal structure and microwave dielectric properties was investigated through the Rietveld refinement and Raman analysis. The microwave dielectric properties were mainly dependent on relative density, ionic polarizabilities, internal strain ?, disordered structure and MgO₆ octahedron distortions. Finally, CaMg_1-xCr_2x/3Si₂O₆ (x?=?0.02) ceramics sintered at 1270?°C for 3?h exhibited excellent microwave dielectric properties of ε_r?=?8.06, Q?×?f?=?89054?GHz, τ_f?=??44.92182?ppm/ºC.     

Co2O3 substitution effects on the structure and microwave dielectric properties of low-firing (Zn0.9Mg0.1)TiO3 ceramics

Low-firing (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ (x = 0.02–0.10) (ZMC_xT) microwave dielectric ceramics with high temperature stability were synthesized via conventional solid-state reaction. The influences of Co₂O₃ substitution on the phase composition, microstructure and microwave dielectric properties of ZMC_xT ceramics were discussed. Rietveld refinement results show the coexistence of ZnTiO₃ and ZnB₂O₄ phases at x = 0.02–0.10. (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ ceramic with x = 0.06 (ZMC_0.06T) obtains the best combination microwave dielectric properties of: ε_r = 21.58, Q × f = 53,948 GHz, τ_f = ? 54.38 ppm/°C. For expanding its application in LTCC field, 3 wt% ZnO-B₂O₃-SiO₂ (ZBS) and 9 wt% TiO₂ was added into ZMC_0.06T ceramic, great microwave dielectric properties were achieved at 900 °C for 4 h: ε_r = 26.03, Q × f = 34,830 GHz, τ_f = ? 4 ppm/°C, making the composite ceramic a promising candidate for LTCC industry.     

Lattice structure analysis and optimised microwave dielectric properties of LiAl1-x(Zn0.5Si0.5)xO2 solid solutions

Low-permittivity LiAl_1-x(Zn_0.5Si_0.5)_xO₂ microwave dielectric ceramics were prepared by the solid-state reaction method. Single-phase LiAlO₂ solid solutions with a tetragonal structure were achieved at x ≤ 0.12. Partial substitution of [Zn_0.5Si_0.5]³⁺ for Al³⁺ could improve the microstructure and prevent from absorbing moisture of pure LiAlO₂ ceramics, which slightly increases their relative permittivity (ε_r). The quality factor (Q × f) and temperature coefficient of resonant frequency (τ_f) were closely related to the crystallinity and cation disorder of the B-site characterized by the full width at half-maximum of B₁⁽¹⁾ –mode assigned to Li–O–Al stretching. The optimum microwave dielectric properties (ε_r = 6.12, Q × f = 56986 GHz and τ_f = -122 ppm/°C) were obtained in the sample with x = 0.02 sintered at 1300 °C.     

Crystal structure and microwave dielectric properties of NaPb2B2V3O12(B=Mg,Zn) ceramics

Two low temperature sintered NaPb₂B₂V₃O₁₂ (B?=?Mg, Zn) ceramics with garnet structure were synthesized through conventional solid state reaction route and their crystal structure and microwave dielectric properties were investigated for the first time. Rietveld refinements of XRD patterns show both the compounds belong to cubic symmetry with space group Ia-3d. Observed number of Raman bands and group theoretical predictions also confirm cubic symmetry with space group Ia-3d for both NPMVO and NPZVO. At the optimum sintering temperature of 725?°C NPMVO has a relative permittivity of 20.6?±?0.2, unloaded quality factor (Q_uxf) of 22,800?±?1500?GHz (f?=?7.7?GHz) and temperature coefficient of resonant frequency +25.1?±?1?ppm/°C while NPZVO has relative permittivity of 22.4?±?0.2, Q_uxf of 7900?±?1500?GHz (f?=?7.4?GHz) and near zero temperature coefficient of resonant frequency of -6?±?1?ppm/°C at 650?°C. The relative permittivity of the compounds is inversely related to the corresponding Raman shifts.     

Low temperature sintering and microwave dielectric properties of 0.5LaAlO3–0.5SrTiO3 ceramics using copper oxide additions

The microwave dielectric properties and the microstructures of 0.5LaAlO₃–0.5SrTiO₃ ceramics with CuO addition prepared with conventional solid-state route have been investigated. Doping with CuO (up to 1 wt.%) can effectively promote the densification and remain comparable dielectric properties of 0.5LaAlO₃–0.5SrTiO₃ ceramics. It is found that 0.5LaAlO₃–0.5SrTiO₃ ceramics can be sintered at 1400 °C due to the sintering aid effect resulted from CuO as addition observed by scanning electron microscopy. The dielectric constant as well as the Q×f value decreases with increasing CuO content. At 1460 °C, 0.5LaAlO₃–0.5SrTiO₃ ceramics with 0.25 wt.% CuO addition possess a dielectric constant (_r) of 35.2, a Q×f value of 24 000 (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of −13.5 ppm/°C.     

Dielectric abnormality and high-permittivity microwave dielectric properties of SrO-TiO2-CeO2 solid solution

The SrO-TiO₂-CeO₂ (Sr_1?1.5×Ce_xTiO₃, SCTO, 0?≤?x?≤?0.2, sintered in N₂) solid solution exhibited the existence of dielectric abnormality/anomaly (for polished samples) and high-permittivity microwave dielectric properties (for unpolished samples). X-ray diffraction (XRD) and Rietveld refinement, along with high-resolution transmission electron microscopy (HRTEM), indicated the evidence of cubic like structure. The SEM-EDX maps demonstrated the formation of a complete solid solution, which further support the XRD results. X-ray photoelectron spectroscopy (XPS) analysis showed mixture of ion valence states upon lattice defects formation. The activation of the TO2/TiO4 polar bands usually described a relaxor-type-dielectric anomaly. The ε′-T curve, together with the polar nature measurements exhibited hysteresis loops, indicating that ceria ions induced weak relaxor behavior. The observed Q×f values were primarily dependent on the lattice defects and Ti³⁺ cations. The temperature coefficient of resonant frequency (${\tau }_f$) shifted gradually from more positive (+1321?ppm/°C) to less positive (+539?ppm/°C) values with a rise of Ce content (x). The unpolished sample with x?=?0.2 exhibited a high permittivity microwave dielectric properties with ε_r =?182, ${\tau }_f$?=?+539?ppm/°C, and Q×f =?668?GHz.     

Nonstoichiometric microwave dielectric ceramics [(Na0.5-xBi0.5+x/3)0.5Ca0.5]MoO4 with low sintering temperatures

In this work, [(Na_0.5-xBi_0.5+x/3)_0.5Ca_0.5]MoO₄ (x = ±0.03, ±0.06, ±0.09, ±0.12) microwave dielectric ceramics prepared by the solid-state reaction method are investigated. All the samples can be sintered well below 800℃. The sintered ceramics show a scheelite structure without any secondary phase, indicating that a solid solution is formed in nonstoichiometric [(Na_0.5-xBi_0.5+x/3)_0.5Ca_0.5]MoO₄. While x value increases from -0.12 to 0.12, the relative permittivity rises from 16.7 to 21.0, TCF value is improved from -21 ppm/℃ to +1 ppm/℃, and Q × f value varies in the range of 17,000 GHz and 34,000 GHz. The Raman analysis reveals that one of the external modes is attributed to be the main factor affecting the performances. When x = 0.09 and 0.12, high performance microwave dielectric ceramics can be well densified at low sintering temperatures (750−775℃) with relative permittivities of 20.9–21.0, improved Q × f values of 31,400−33,000 GHz, and near-zero temperature coefficients of resonate frequency (|TCF| ≈ ±2 ppm/℃).     

Densification, microstructural evolution and microwave dielectric properties of fluxed sintered 12R-Ba(Ti0.5Mn0.5)O3 ceramics

Doped hexagonal BaTiO₃ (h-BaTiO₃) ceramics have recently been identified as potential candidates for use in microwave dielectric resonators. However, similar to other common microwave ceramics, doped h-BaTiO₃ ceramics require a sintering temperature higher than 1400 °C. In this study, the effects of Bi₂O₃ and Li₂CO₃ on the densification, microstructural evolution and microwave properties of hexagonal 12R-Ba(Ti_0.5Mn_0.5)O₃ ceramics were examined. Results indicate that Bi₂O₃ and Li₂CO₃ are able to effectively reduce the sintering temperature of 12R-Ba(Ti₀₅Mn_0.5)O₃ ceramics through liquid phase sintering while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 12R-Ba(Ti_0.5Mn_0.5)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 1200 °C (?_r: 36.0, Qf_r: 6779 GHz, and τ_f: 25.3 ppm/°C), and 5 wt% Li₂CO₃ sintered at 1200 °C (?_r: 28.1, Qf_r: 5304 GHz, and τ_f: 35.3 ppm/°C).     

Phase composition,Raman spectra,infrared spectra and dielectric properties of Li2MgTi1-x(Mg1/3Nb2/3)xO4 ceramics at microwave frequency

The Li₂MgTi_1-x(Mg_1/3Nb_2/3)_xO₄ (0?≤x?≤?0.5) ceramics were prepared by the conventional solid-state method. The relationship among phase composition, substitution amount and microwave dielectric properties of the ceramics was symmetrically investigated. All the samples possess the rock salt structure with the space group of Fm-3m. As the x value increases from 0 to 0.5, the dielectric constant linearly decreases from 16.75 to 15.56, which can be explained by the variation of Raman spectra and infrared spectra. The Q·f value shows an upward tendency in the range of 0?≤x?≤?0.3, but it then decreases when x?>?0.3. In addition, the temperature coefficient of resonant frequency (τ_f) is shifted toward zero with the increasing (Mg_1/3Nb_2/3)⁴⁺ addition. By comparison, the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r=?16.19, Q·f =?160,000?GHz and τ_f =??3.14?ppm/°C.     

The microwave dielectric properties and crystal structure of low temperature sintering LiNiPO4 ceramics

The LiNiPO₄ ceramic for the LTCC technology was prepared via the traditional solid-state reaction route and its dielectric properties were investigated for the first time. The best dielectric properties of LiNiPO₄ ceramics with a ε_r of 7.18, Q×f value of 27,754?GHz and τ_f of ?67.7?ppm/°C were obtained in samples sintered at 825?°C for 2?h. Rietveld refinement was firstly employed to study the crystal structure and dielectric properties of LiNiPO₄ ceramics. Unfortunately, the relatively large negative τ_f was unfavorable to practical applications. Therefore, we introduced TiO₂, which possessed a considerable positive τ_f, to obtain a desired τ_f value. The prepared LiNiPO₄ ceramics with 15?wt% TiO₂ sintered at 900?°C for 2?h exhibited excellent dielectric properties of ε_r～11.49, Q×f～10,792?GHz, τ_f～?2.8?ppm/°C. The Ag co-fired experiments confirmed the excellent chemical compatibility with LiNiPO₄-TiO₂ ceramics which might be potential dielectric LTCCs for high frequency applications.     

Cold sintered temperature stable xLi2MoO4-(1-x)(LiBi)0.5MoO4 microwave dielectric ceramics

Temperature stable xLi₂MoO₄-(1-x)(LiBi)_0.5MoO₄ (x = 0, 40, 50, 60, 70, 100 vol%) microwave dielectric ceramics obtained by cold sintering process (CSP) under a mild sintering condition (120 ℃/30 min/200 MPa) are introduced in this work. The XRD, SEM, and Raman analysis indicate the coexistence of Li₂MoO₄ and (LiBi)_0.5MoO₄ phases. Li₂MoO₄-(LiBi)_0.5MoO₄ ceramics are compatible with Ag and Al electrode materials under cold sintering condition. The specimens exhibit high relative densities and good microwave dielectric properties (relative permittivities: 31.5–5.5; Q×f values: 1900 - 18,500 GHz; TCF values: from +144 ppm/℃ to ?106 ppm/℃), in particular, TCF = +0.7 ppm/℃ can be obtained in the case of x = 50 vol%. The extrapolated microwave dielectric properties obtained by the fitted infrared reflectivity spectrum are close to the measured data, revealing that the dielectric responses of cold sintered Li₂MoO₄-(LiBi)_0.5MoO₄ ceramics in the microwave range are dominated by the polar optical phonons.     

Effect of ZnO doping on the microstructure and microwave dielectric properties of 0.2CaTiO3-0.8(Li0.5Sm0.5)TiO3 ceramics

0.2CaTiO₃-0.8(Li_0.5Sm_0.5)TiO₃-xZnO(x = 0, 0.3, 0.6, 0.9, 1.2 wt%, 0.2CT-0.8LST-xZnO) with orthogonal perovskite structure were fabricated by the solid state method. The effects of ZnO additives on the microwave dielectric properties of 0.2CT-0.8LST ceramics were systematically investigated. With increasing the dopant (x) concentration, the dielectric constant (ε_r) and the temperature co-efficient of resonance frequency (τ_f) decreased, however, the Q × f values increased. The relationship between vibration mode and microwave dielectric properties was studied using Raman spectroscopy. The Q × f value of ceramics was related to the half-height width of Raman scattering. Narrower Raman scattering peaks corresponded to longer microwave energy propagation decay times and higher Q × f value. Based on X-ray photoelectron spectroscopy (XPS), the addition of Zn²⁺ ions limited the reduction of Ti⁴⁺ cations. The excellent dielectric properties were obtained when x = 1.2 wt% with ε_r = 100.25, Q × f = 6525 GHz, and τ_f = ?12.12 ppm/°C.     

Crystal structure,far-infrared spectra,and microwave dielectric properties of bazirite-type BaZr(Si1-xGex)3O9 ceramics

Novel BaZr(Si_1-xGe_x)₃O₉ (0 ≤ x ≤ 1.0) microwave dielectric ceramics were prepared by solid-state reaction sintering at 1200–1450 °C for 5 h Ge⁴⁺ ions occupied the Si⁴⁺ positions, and BaZr(Si_1-xGe_x)₃O₉ solid solutions were obtained. The BaZr(Si_1-xGe_x)₃O₉ (0 ≤ x ≤ 1.0) ceramics exhibited hexagonal structures with P-6c2 space groups and octahedral layers and [Si/Ge₃O₉]^6- rings. Owing to these structural characteristics, the ceramics exhibited low permittivity. With an increase in x, the relative permittivity (ε_r) values of the BaZr(Si_1-xGe_x)₃O₉ (0 ≤ x ≤ 1.0) ceramics increased from 7.68 (x = 0) to 9.45 (x = 1.0), while their quality factor (Q × f) values first increased and then decreased. The Q × f value (10,300 GHz at 13.43 GHz) of the BaZrSi₃O₉ (x = 0) ceramic improved with the substitution of Si⁴⁺ by Ge⁴⁺. A high Q × f value (36,100 GHz at 13.81 GHz) was obtained for the BaZr(Si_1-xGe_x)₃O₉ (x = 0.2) ceramic, and the Q × f values of the BaZr(Si_1-xGe_x)₃O₉ ceramics could be controlled by varying the Si/Ge-site bond valence. The temperature coefficient of resonance frequency (τ_f) values of the BaZr(Si_1-xGe_x)₃O₉ ceramics were mainly affected by the O2-site bond valence, and the optimum τ_f value (?22.8 ppm/°C) was achieved for the BaZrSi₃O₉ ceramic. The BaZr(Si_1-xGe_x)₃O₉ (x = 0.2) ceramic showed the optimum microwave dielectric properties (ε_r = 8.36, Q × f = 36,100 GHz at 13.81 GHz, and τ_f = ?34.5 ppm/°C).     

Structural dependence of microwave dielectric properties of spinel structured Mg2(Ti1-xSnx)O4 solid solutions: Crystal structure refinement,Raman spectra study and complex chemical bond theory

Mg₂(Ti_1-xSn_x)O₄ (x?=?0–1) ceramics were prepared through conventional solid-state method. This paper focused on the dependence of microwave dielectric properties on crystal structural characteristics via crystal structure refinement, Raman spectra study and complex chemical bond theory. XRD spectrums delineated the phase information of a spinel structure, and structural characteristic of these compositions were achieved with the help of Rietveld refinements. Raman spectrums were used to depict the correlations between vibrational phonon modes and dielectric properties. The variation of permittivity is ascribed to the Mg₂(Ti_1-xSn_x)O₄ average bond covalency. The relationship among the B-site octahedral bond energy, tetrahedral bond energy and temperature coefficient are discussed by defining on the change rate of bond energy and the contribution rate of octahedral bond energy. The quality factor is affected by systematic total lattice energy, and the research of XPS patterns illustrated that oxygen vacancies can be effectively restrained in rich oxygen sintering process. Obviously, the microwave dielectric properties of Mg₂(Ti_1-xSn_x)O₄ compounds were obtained (${\epsilon }_r$= 12.18, $Q\times f$?=?170,130?GHz, ${\tau }_f$?=??53.1?ppm/°C, x?=?0.2).     

Effects of CaTiO3 addition on the densification and microwave dielectric properties of BiSbO4 ceramics

In this study, the effects of CaTiO₃ addition on the sintering characteristics and microwave dielectric properties of BiSbO₄ were investigated. Pure BiSbO₄ achieved a sintered density of 8.46 g/cm³ at 1100 °C. The value of sintered density decreased with increasing CaTiO₃, and sintering at a temperature higher than 1100 °C led to a large weight loss (>2 wt%) caused by the volatile nature of the compound. Samples either sintered above 1100 °C or with a CaTiO₃ content exceeding 3 wt% showed poor densification. SEM micrographs revealed microstructures with bimodal grain size distribution. The size of the smaller grains ranged from 0.5 to 1.2 μm and that of the larger grains between 3 and 7 μm. The microwave dielectric properties of the (1−x) BiSbO_4−x CaTiO₃ ceramics are dependent both on the x value and on the sintering temperature. The 99.0 wt% BiSbO₄–1.0 wt% CaTiO₃ ceramic sintered at 1100 °C reported overall microwave dielectric properties that can be summarized as ε_r≈21.8, Q×f≈61,150 GHz, and τ_f≈−40.1 ppm/°C, all superior to those of the BiSbO₄ ceramics sintered with other additives.     

Temperature stability,low loss and defect relaxation of MgO-TiO2 microwave dielectric ceramics modified by Ca0.8Sr0.2TiO3

Temperature-stable and low-loss microwave dielectrics based on the MgO-TiO₂ system with nominal formation Mg_n+1Ti_nO_3n+1 (n = 5, MT) were prepared via the conventional solid-state reaction method. Ca_0.8Sr_0.2TiO₃ (CST) was chosen as a τ_f compensator for matrix MT to form the composite ceramics (1-x)Mg₆Ti₅O₁₆-xCa_0.8Sr_0.2TiO₃ (0.10 ≤ x ≤ 0.26, MT-CST). The effects of CST additions on the phase composition, defect relaxation behavior, and microwave dielectric properties of MT were investigated. It revealed that undoped MT was basically consisted of MgTiO₃ as a major phase and Mg₂TiO₄ as a minor phase, and such two phases coexisted well with CST additions. Interestingly, τ_f could be tuned close to zero (?1.28 ppm/°C) for the MT-CST ceramics at x = 0.22, accompanied with a high Q×f value ~ 74,200 GHz and a proper ε_r ~ 20.25 (9.90 GHz). These materials possessed a good potential for applications in microwave components and devices. Meanwhile, significant relaxation phenomena were observed in all the MT-CST samples using dielectric spectroscopy and thermally stimulated depolarization current (TSDC) techniques. The oxygen-vacancy-related defects, shown as ($T{i}_{Ti}^{\prime }$)-($V_O^{??}$) dipoles and $V_O^{??}$, were the main types of defects in MT-CST, which was responsible for the relaxation behavior; meanwhile, the defect concentrations increased with the increase of CST content, thus resulting in the increase of dielectric loss at low and high frequencies.     

Low-temperature preparation and microwave dielectric properties of cold sintered Li2Mg3TiO6 nanocrystalline ceramics

This study aims to fabricate Li₂Mg₃TiO₆ ceramics with ultrafine grains using a novel cold sintering process combined with a post-annealing treatment at a temperature <?950?°C. In this study, phase composition, sintering behavior, microstructure evolution, and microwave dielectric properties of the resultant nanocrystalline ceramics were investigated for the first time. The as-compacted green pellets at 180?°C yielded a high relative density of ~ 90% and the ceramics that were post-sintered over a broad temperature range (800–950?°C) possessed highly dense microstructure with a relative density of ~ 96%. The average grain size varied from 100 to 1200?nm for the samples sintered at 800–950?°C. Furthermore, the quality (Q × f) values of the obtained specimens exhibited a strong positive dependency on the grain size, which increased from 17,790 to 47,960?GHz for grain sizes ranging between 100 and 1200?nm, while the dielectric permittivity (ε_r) and temperature coefficient of the resonant frequency (τ_f) values did not undergo any significant changes over this range of grain size.