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1.
    
The in situ formation of a light‐emitting p–n or p–i–n junction in light‐emitting electrochemical cells (LECs) necessitates mixed ionic–electronic conductors in the active layer. This unique characteristic requires electronic, luminescent, and ionic ingredients that work synergistically in the LECs. The material requirements that lead to promising electroluminescent properties are discussed and the important components reported so far are surveyed. Particular attention is paid to the working mechanisms behind junction formation and stabilization to create efficient and stable electroluminescence in conjugated‐polymer‐based LECs. Keeping these fundamentals in mind explains how LEC devices have evolved from classic conjugated polymer blends into highly stable crosslinked, hybrid composite, and stretchable device architectures. To conclude, a future development strategy is proposed based on a dual approach: develop new materials specifically for LEC devices and explore novel ways to efficiently process and stabilize the p–i–n junction, which will drive improvements in both LEC external quantum efficiency and operating lifetime toward truly low‐cost solid‐state lighting applications.  相似文献   

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Using a planar electrode geometry, the operational mechanism of iridium(III) ionic transition metal complex (iTMC)‐based light‐emitting electrochemical cells (LECs) is studied by a combination of fluorescence microscopy and scanning Kelvin probe microscopy (SKPM). Applying a bias to the LECs leads to the quenching of the photoluminescence (PL) in between the electrodes and to a sharp drop of the electrostatic potential in the middle of the device, far away from the contacts. The results shed light on the operational mechanism of iTMC‐LECs and demonstrate that these devices work essentially the same as LECs based on conjugated polymers do, i.e., according to an electrochemical doping mechanism. Moreover, with proceeding operation time the potential drop shifts towards the cathode coincident with the onset of light emission. During prolonged operation the emission zone and the potential drop both migrate towards the anode. This event is accompanied by a continuous quenching of the PL in two distinct regions separated by the emission line.  相似文献   

4.
    
A combination of impedance spectroscopy, device characterization, and modeling is used to pinpoint key processes in the operation of polymer light‐emitting electrochemical cells (LECs). At low applied voltage, electric double layers with a thickness of ≈2–3 nm are shown to exist at the electrode interfaces. At voltages exceeding the bandgap potential of the conjugated polymer (V ≥ 2.5 V for superyellow), a light‐emitting p–n junction forms in situ, with a steady‐state structure that is found to depend strongly on the applied voltage. This is exemplified by that the effective p–n junction thickness (dpn) for a device with an interelectrode gap of 90 nm decreases from ≈23 nm at 2.5 V to ≈6 nm at 3.9 V. The current increases with decreasing dpn in a concerted manner, while the brightness reaches its peak at V = 3.4 V when dpn ≈ 10 nm. The existence of an optimum dpn for high brightness in LECs is attributed to an offset between an increase in the exciton formation rate with decreasing dpn, due to an increasing current, and a simultaneous decrease in the exciton radiative decay rate, when an increasing fraction of excitons diffuses away from the p–n junction into the surrounding non‐radiative doping regions.  相似文献   

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2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n‐type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p‐type behavior, however, remains challenging. Here, a novel one‐step growth has been developed to attain p‐type MoS2 layers in large scale by using Mo‐containing sol–gel, including 1% tungsten (W). Atomic‐resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as‐grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p‐type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft‐lithography techniques, which enables patterned growth of p‐type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as‐prepared MoS2, which shows strong rectifying behavior.  相似文献   

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Light‐emitting electrochemical cells (LECs) have emerged as some of the simplest light‐emitting devices. Indeed, numerous LECs have been produced using fluorescent polymers; however, initial LEC structures require a mixture of polymers and electrolytes, thus strictly limiting their applicability. In contrast, recent advances in device technologies and material synthesis have opened a route for LECs using nonpolymeric materials. This progress report focuses on current developments in the device concepts, mechanisms, and characteristics of LECs that allow the utilization of nonpolymeric materials. First, the three primary device types, namely, electrochemically doped, ionic‐material, and electrostatically doped LECs, are categorized, and their distinct features are described. Second, electrochemically doped LECs based on small molecules and branched molecules are introduced. Then, an overview of the rapidly growing field of ionic‐material LECs, especially ionic transition metal complexes, ionic small molecules and perovskites, and their characteristics are provided. Following these results, recent achievements in solid‐state materials, such as inorganic single crystals, quantum dots, and 2D materials, as electrostatically doped LECs are highlighted. Finally, an overview and evaluation of these LECs reveal the key directions and remaining issues that must be overcome to further functionalize LECs, which provide a versatile approach for new lighting applications comprising emergent materials.  相似文献   

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Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K+ center of the silicon nitride (SixNy). An obvious change from pristine p‐type BP to n type is observed after the deposit of the SixNy on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm2 V–1 s–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~104. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.  相似文献   

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Much effort has gone into research on light‐emitting electrochemical cells (LECs) in recent years. LECs have a simple structure and can be fabricated using low‐cost methods and materials and are seen as the next big thing in organic devices after organic light‐emitting diodes (OLEDs). In particular, expectations are high, in that LECs could be used to create a new generation of low‐cost lighting systems, making use of their surface‐emitting property. Getting such systems to the market will require the development of highly efficient white light‐emitting LECs. A variety of methods for obtaining white emission based on the light‐mixing principle have been explored. Among these, the use of exciplexes formed between donor‐type and acceptor‐type molecules is one of the more promising. Exciplex emission is broad in spectrum and can be used to produce LECs with a high color rendering index. In this progress report, the recent developments in research into LECs designed to utilize exciplex emission and present technologies used to obtain white emission are discussed. The potential for using thermally activated delayed fluorescence to improve efficiency is described. Finally, the latest developments in optical engineering techniques for LECs are also discussed.  相似文献   

11.
    
The characteristic doping process in polymer light‐emitting electrochemical cells (LECs) causes a tradeoff between luminescence intensity and efficiency. Experiments and numerical modeling on thin film polymer LECs show that, on the one hand, carrier injection and transport benefit from electrochemical doping, leading to increased electron‐hole recombination. On the other hand, the radiative recombination efficiency is reduced by exciton quenching by polarons involved in the doping. Consequently, the quasi‐steady‐state luminescent efficiency decreases with increasing ion concentration. The transient of the luminescent efficiency shows a characteristic roll‐off while the current continuously increases, attributed to ongoing electrochemical doping and the associated exciton quenching. Both effects can be modeled by exciton polaron‐quenching via diffusion‐assisted Förster resonance energy transfer. These results indicate that the tradeoff between efficiency and intensity is fundamental, suggesting that the application realm of future LECs should be sought in high‐brightness, low‐production cost devices, rather than in high‐efficiency devices.  相似文献   

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Triethylene glycol, a common side chain, is attached to two different dye moieties, diketopyrrolopyrrole (DPP) and isoindigo (II), and their bromo derivative monomers are copolymerized, respectively, with common bisstannyl alkylated bithiophene via Stille coupling. The resulting donor–acceptor low‐bandgap copolymers, namely, PTDPP‐DT and PTII‐DT, are rationally deigned and synthesized conjugated polymeric systems suitable for doping. Both polymers are successfully investigated as single‐component and composite‐system‐based electrochemical transistors and light‐emitting electrochemical cells. A PTDPP‐DT thin film exhibits relatively high electrical conductivity of up to 80 S cm−1 in the electrochemically doped state, whereas PTII‐DT thin film prevents the macroscopic charge transport due to a large‐scale crystalline disorientation. Upon evaluating both polymers as active conjugated materials in light‐emitting electrochemical cells, they both exhibit emission under efficient electron/hole doping conditions.  相似文献   

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Solid‐state lighting (SSL) is one of the biggest achievements of the 20th century. It has completely changed our modern life with respect to general illumination (light‐emitting diodes), flat devices and displays (organic light‐emitting diodes), and small labeling systems (light‐emitting electrochemical cells). Nowadays, it is however mandatory to make a transition toward green, sustainable, and equally performing lighting systems. In this regard, several groups have realized that the actual SSL technologies can easily and efficiently be improved by getting inspiration from how natural systems that manipulate light have been optimized over millennia. In addition, various natural and biocompatible materials with suitable properties for lighting applications have been used to replace expensive and unsustainable components of current lighting devices. Finally, SSL has also started to revolutionize the biomedical field with the achievement of efficient implantable lighting systems. Herein, the‐state‐of‐art of (i) biological materials for lighting devices, (ii) bioinspired concepts for device designs, and (iii) implantable SSL technologies is summarized, highlighting the perspectives of these emerging fields.  相似文献   

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While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH3NH3PbI3) is large with a value of ≈10?8 S cm?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH3NH3PbI3?xBrx) light‐emitting devices indicates that I? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries.  相似文献   

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16.
Multicrystalline solar cells break down strongly at reverse voltages well below the theoretical limit. Previous explanations were based on assuming a constant depth of the junction below the surface. In this work, preferred phosphorous diffusion at special line defects in grain boundaries is shown to lead to spikes in the p–n junctions even below flat surfaces. The curvature radii of the spherical p–n junction bending are measured by electron beam‐induced current to be in the range of 300–500 nm, leading to the observed type III avalanche breakdown voltages. Copyright © 2012 John Wiley & Sons, Ltd.  相似文献   

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Triplet–triplet annihilation (TTA) is studied in a wide range of fluorescent host:guest emitter systems used in organic light‐emitting devices (OLEDs). Strong TTA is observed in host:guest systems in which the dopant has a limited charge‐trapping capability. On the other hand, systems in which the dopant can efficiently trap charges show insignificant TTA, an effect that is due, in part, to the efficient quenching of triplet excitons by the trapped charges. Fluorescent host:guest systems with the strongest TTA are found to give the highest OLED electroluminescence efficiency, a phenomenon attributed to the role of TTA in converting triplet excitons into additional singlet excitons, thus appreciably contributing to the light output of OLEDs. The results shed light on and give direct evidence for the phenomena behind the recently reported very high efficiencies attainable in fluorescent host:guest OLEDs with quantum efficiencies exceeding the classical 25% theoretical limit.  相似文献   

18.
    
The Dirac point(s) in graphene field‐effect transistors (GFETs) are of great importance for electronic application. However, the lack of the effective means to distinguish the electrical properties of graphene at the contact and channel regions limits a clear understanding of their contributions to the Dirac point(s). A method, which can characterize the electrical properties of graphene under metal contact and in the channel, is developed, respectively. It is found that the Fermi levels of graphene at the contact and channel regions are quite different in the GFETs. The difference in Fermi levels results in the penetration of the doping effect under the contact into the channel with a length as long as 1 µm. The difference also causes the double Dirac point feature in the long‐channel GFET due to the combined graphene properties both in contact and channel. One of the two Dirac points diminished in short‐channel GFET due to the penetration of doping effect under the contact. The study demonstrates that the electrical behavior of short‐channel GFET is dominated by the contact region. This paces a way to deeply understand and further improve the performances of GFETs by controlling the Fermi levels in the whole devices.  相似文献   

19.
    
Light‐emitting electrochemical cells (LECs) are solid‐state lighting devices that convert electric current to light within electroluminescent organic semiconductors, and these devices have recently attracted significant attention. Introduced in 1995, LECs are considered a great breakthrough in the field of light‐emitting devices for their applications in scalable and adaptable fabrication processes aimed at producing cost‐efficient devices. Since then, LECs have evolved through the discovery of new suitable emitters, understanding the working mechanism of devices, and the development of various fabrication methods. LECs are best known for their simple architecture and easy, low‐cost fabrication techniques. The key feature of their fabrication is the use of air stable electrodes and a single active layer consisting of mobile ions that enable efficient charge injection and transport processes within LEC devices. More importantly, LEC devices can be operated at low voltages with high efficiencies, contributing to their widespread interest. This review provides a general overview of the development of LECs and discusses how small molecules can be utilized in LEC applications by overcoming the use of traditional lighting materials like polymers and ionic transition metal complexes. The achievements of each study concerning small molecule LECs are discussed.  相似文献   

20.
    
MXenes (Ti3C2) are 2D transition‐metal carbides and carbonitrides with high conductivity and optical transparency. However, transparent MXene electrodes suitable for polymer light‐emitting diodes (PLEDs) have rarely been demonstrated. With the discovery of the excellent electrical stability of MXene under an alternating current (AC), herein, PLEDs that employ MXene electrodes and exhibit high performance under AC operation (AC MXene PLEDs) are presented. The PLED exhibits a turn‐on voltage, current efficiency, and brightness of 2.1 V, 7 cd A?1, and 12 547 cd m?2, respectively, when operated under AC with a frequency of 1 kHz. The results indicate that the undesirable electric breakdown associated with heat arising from the poor interface of the MXene with a hole transport layer in the direct‐current mode is efficiently suppressed by the transient injection of carriers accompanied by the alternating change of the electric polarity under the AC, giving rise to reliable light emission with a high efficiency. The solution‐processable MXene electrode can be readily fabricated on a flexible polymer substrate, allowing for the development of a mechanically flexible AC MXene PLED with a higher performance than flexible PLEDs employing solution‐processed nanomaterial‐based electrodes such as carbon nanotubes, reduced graphene oxide, and Ag nanowires.  相似文献   

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