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1.
A technique to enhance the linearity of continuous-time operational transconductance amplifiers (OTA)-C filters working at high frequencies is proposed. Each OTA consumes 10.5 mW and the transconductance can be tuned from 70 to 160 /spl mu/A/V while the IM3 remains below -70 dB up to 50 MHz for a 1.3-V/sub pp/ differential input. For a 20-MHz low-pass second-order filter implementation, the measured IM3 with an input voltage of 1.3 V/sub pp/ is below - 65 dB. The supply voltage is 3.3 V. Experimental results of the circuit, fabricated in a standard CMOS 0.35-/spl mu/m technology, are presented.  相似文献   

2.
A pseudo-differential fully balanced fully symmetric CMOS operational transconductance amplifier (OTA) architecture with inherent common-mode detection is proposed. Through judicious arrangement, the common-mode feedback circuit can be economically implemented. The OTA achieves a third harmonic distortion of -43 dB for 900 mV/sub pp/ at 30 MHz. The OTA, fabricated in 0.5-/spl mu/m CMOS process, is used to design a 100-MHz fourth-order linear phase filter. The measured filter's group delay ripple is 3% for frequencies up to 100 MHz, and the measured dynamic range is 45 dB for a total harmonic distortion of -46 dB. The filter consumes 42.9 mW per complex pole pair while operating from a /spl plusmn/1.65-V power supply.  相似文献   

3.
A sixth-order 10.7-MHz bandpass switched-capacitor filter based on a double terminated ladder filter is presented. The filter uses a multipath operational transconductance amplifier (OTA) that presents both better accuracy and higher slew rate than previously reported Class-A OTA topologies. Design techniques based on charge cancellation and slower clocks are used to reduce the overall capacitance from 782 down to 219 unity capacitors. The filter's center frequency and bandwidth are 10.7 MHz and 400 kHz, respectively, and a passband ripple of 1 dB in the entire passband. The quality factor of the resonators used as filter terminations is around 32. The measured (filter + buffer) third-intermodulation (IM3) distortion is less than -40 dB for a two-tone input signal of +3-dBm power level each. The signal-to-noise ratio is roughly 58 dB while the IM3 is -45 dB; the power consumption for the standalone filter is 42 mW. The chip was fabricated in a 0.35-/spl mu/m CMOS process; filter's area is 0.84 mm/sup 2/.  相似文献   

4.
This brief describes a new linear operational transconductance amplifier (OTA) and its application to a ninth-order Bessel filter. To improve the linearity of the OTA, we employ a mobility compensation circuit which combines the transistors operating in the triode and the subthreshold regions. The proposed technique enhances the linearity of the transconductance without loss of the input swing range. The proposed OTA shows /spl plusmn/0.5% Gm variation and the total harmonic distortion of less than - 60-dB over the input range of /spl plusmn/0.8-V. The ninth-order Bessel filter employing the proposed OTA has been implemented in a 0.35-/spl mu/m n-well CMOS process under 3.3-V supply voltage. It shows the cutoff frequency of 8 MHz and the power consumption of 65 mW.  相似文献   

5.
A 550-MHz linear-phase low-pass continuous-time filter is described. The operational transconductance amplifier (OTA) is based on complementary differential pairs in order to achieve high-frequency operation. A common-mode feedback (CMFB) based on a Class AB amplifier with improved stability at high frequencies is introduced. Results for the stand alone OTA show a unity gain frequency of 1 GHz while the excess phase is less than 5/spl deg/. The filter is based on G/sub m/-C biquads and achieves IM3 <-40 dB for a two-tone input signal of -10 dBm each. The power consumption of the fourth-order filter is 140 mW from supply voltages of /spl plusmn/1.65 V. The chip was fabricated in a standard 0.35-/spl mu/m CMOS technology.  相似文献   

6.
In this paper we present a bulk-driven CMOS triode-based fully balanced operational transconductance amplifier (OTA) and its application to continuous-time filters. The proposed OTA is linearly tunable with the feature of low distortion and high output impedance. It can achieve wide input range without compromising large transconductance tuning interval. Using a 0.18 μm n-well CMOS process, we have implemented a third-order elliptic low-pass filter based on the proposed OTA. Both the simulation and measurement results are reported. The total harmonic distortion is more than −45 dB for fully differential input signals of up to 0.8 V peak–peak voltage. A dynamic range of 45 dB is obtained under the OTA noise integrated over 1 MHz.  相似文献   

7.
A new low-voltage pseudo-differential CMOS transconductor using transistors in the saturation region is presented. It keeps the input common-mode voltage constant, while its transconductance is easily tunable through a DC voltage preserving linearity for a moderate range of G/sub m/ values. Post-layout results for a 2.7 V-0.5 /spl mu/m CMOS design dissipating less than 1.5 mW show a 1:2 G/sub m/ tuning range with an almost constant bandwidth over 600 MHz. Total harmonic distortion figures are below -60 dB over the whole range at 10 MHz up to a 100 /spl mu/A/sub p-p/ differential output.  相似文献   

8.
We present design techniques that make possible the operation of analog circuits with very low supply voltages, down to 0.5 V. We use operational transconductance amplifier (OTA) and filter design as a vehicle to introduce these techniques. Two OTAs, one with body inputs and the other with gate inputs, are designed. Biasing strategies to maintain common-mode voltages and attain maximum signal swing over process, voltage, and temperature are proposed. Prototype chips were fabricated in a 0.18-/spl mu/m CMOS process using standard 0.5-V V/sub T/ devices. The body-input OTA has a measured 52-dB DC gain, a 2.5-MHz gain-bandwidth, and consumes 110 /spl mu/W. The gate-input OTA has a measured 62-dB DC gain (with automatic gain-enhancement), a 10-MHz gain-bandwidth, and consumes 75 /spl mu/W. Design techniques for active-RC filters are also presented. Weak-inversion MOS varactors are proposed and modeled. These are used along with 0.5-V gate-input OTAs to design a fully integrated, 135-kHz fifth-order elliptic low-pass filter. The prototype chip in a 0.18-/spl mu/m CMOS process with V/sub T/ of 0.5-V also includes an on-chip phase-locked loop for tuning. The 1-mm/sup 2/ chip has a measured dynamic range of 57 dB and draws 2.2 mA from the 0.5-V supply.  相似文献   

9.
A feedforward compensation scheme with no Miller capacitors is proposed to overcome the bandwidth limitations of traditional Miller compensation schemes. The technique has been used in the design of an operational transconductance amplifier (OTA) with a dc gain of 80 dB, gain bandwidth of 1.4 GHz, phase margin of 62/spl deg/, and 2 ns settling time for 2-pF load capacitor in a standard 0.35-/spl mu/m CMOS technology. The OTA's current consumption is 4.6 mA. The OTA is used in the design of a fourth-order switched-capacitor bandpass /spl Sigma//spl Delta/ modulator with a clock frequency of 92 MHz. It achieves a peak signal-to-noise ratio of 80 and 54 dB for 270-kHz (GSM) and 3.84-MHz (CDMA) bandwidths, respectively and consumes 19 mA of current from a /spl plusmn/1.25-V supply.  相似文献   

10.
A CMOS operational transconductance amplifier (OTA) for low-power and wide tuning range filter application is proposed in this paper. The OTA can work from the weak inversion region to the strong inversion region to maximize the transconductance tuning range. The transconductance can be tuned by changing its bias current. A fifth-order Elliptic low-pass filter implemented with the OTAs was integrated by TSMC 0.18-mum CMOS process. The filter can operate with the cutoff frequency of 250 Hz to 1 MHz. The wide tuning range filter would be suitable for multi-mode applications, especially under the consideration of saving chip areas. The third-order inter-modulation (IM3) of -40 dB was measured over the tuning range with two tone input signals. The power consumption is 0.8 mW at 1-MHz cutoff frequency and 1.8-V supply voltage with the active area less than 0.3 mm2  相似文献   

11.
基于衬底驱动MOS技术,设计了一种0.8 V高性能全差分CMOS跨导运算放大器(OTA)。在互补输入差分对的衬底端施加信号,避开MOSFET阈值电压的限制,以达到超低压应用。在0.8 V的电源电压下,其直流开环增益为73.8 dB,单位增益带宽为16.4 MHz。基于该OTA,采用无源网络模拟法,设计实现了截止频率为5 MHz,通带波纹为0.5 dB的三阶椭圆OTA-C滤波器。仿真结果表明了所设计滤波器的正确性。  相似文献   

12.
A fully differential wideband sixth-order switched-capacitor bandpass filter is designed for channel selection in cable TV applications. A modified double-sampling pseudo-two-path technique is proposed to achieve a second-order wideband bandpass filter with a single opamp. Implemented in a standard double-poly four-metal 0.35-/spl mu/m CMOS process and operated at 176-MHz sampling frequency, the filter achieves a measured center frequency of 44 MHz with a bandwidth of 6.28 MHz and a dynamic range of 58.3 dB at 3% IM3. The filter consumes 92.5mW at a single 3.0-V supply and occupies a chip area of 0.52 mm /sup 2/.  相似文献   

13.
A full CMOS seventh-order linear phase filter based on g/sub m/-C biquads with a -3-dB frequency of 200 MHz is realized in 0.35-/spl mu/m CMOS process. The linear operational transconductance amplifier is based on complementary differential pairs in order to achieve both low-distortion figures and high-frequency operation. The common-mode feedback (CMFB) employed takes advantage of the filter architecture; incorporating the load capacitors into the CMFB loop improves further its phase margin. A very simple automatic tuning system corrects the filter deviations due to process parameter tolerances and temperature variations. The group delay ripple is less than 5% for frequencies up to 300 MHz, while the power consumption is 60 mW. The third-harmonic distortion is less than -44 dB for input signals up to 500 mV/sub pp/. The filter active area is only 900 /spl times/ 200 /spl mu/m/sup 2/. The supply voltages used are /spl plusmn/1.5 V.  相似文献   

14.
A 0.25-/spl mu/m single-chip CMOS single-conversion tunable low intermediate frequency (IF) receiver operated in the 902-928-MHz industrial, scientific, and medical band is proposed. A new 10.7-MHz IF section that contains a limiting amplifier and a frequency modulated/frequency-shift-key demodulator is designed. The frequency to voltage conversion gain of the demodulator is 15 mV/kHz and the dynamic range of the limiting amplifier is around 80 dB. The sensitivity of the IF section including the demodulator and limiting amplifier is -72 dBm. With on-chip tunable components in the low-power low-noise amplifier (LNA) and LC-tank voltage-controlled oscillator circuit, the receiver measures an RF gain of 15 dB at 915 MHz, a sensitivity of -80 dBm at 0.1% bit-error rate, an input referred third-order intercept point of -9 dBm, and a noise figure of 5 dB with a current consumption of 33 mA and a 2450 /spl mu/m/spl times/ 2450 /spl mu/m chip area.  相似文献   

15.
Low-voltage high-gain differential OTA for SC circuits   总被引:1,自引:0,他引:1  
A new differential operational transconductance amplifier (OTA) for SC circuits that operates with a supply voltage of less than two transistor threshold voltages is presented. Its simplicity relies on the use of a low-voltage regulated cascode circuit, which achieves very high output impedance under low-voltage restrictions. The OTA has been designed to operate with a supply voltage of V/sub DD/=1.5 V, using a 0.6 /spl mu/m CMOS technology with transistor threshold voltages of V/sub TN/=0.75 V and V/sub TP/=-0.85 V. Post-layout simulation results for a load capacitance (C/sub L/) of 2 pF show a 75 MHz gain-bandwidth product and 100 dB DC gain with a quiescent power consumption of 750 /spl mu/W.  相似文献   

16.
The design of a high-voltage output driver in a digital 0.25-/spl mu/m 2.5-V technology is presented. The use of stacked devices with a self-biased cascode topology allows the driver to operate at three times the nominal supply voltage. Oxide stress and hot carrier degradation is minimized since the driver operates within the voltage limits imposed by the design rules of a mainstream CMOS technology. The proposed high-voltage architecture uses a switching output stage. The realized prototype delivers an output swing of 6.46 V to a 50-/spl Omega/ load with a 7.5-V supply and an input square wave of 10 MHz. A PWM signal with a dual-tone sinusoid at 70 kHz and 250 kHz results in an IM3 of -65 dB and an IM2 of -67 dB. The on-resistance is 5.9 /spl Omega/.  相似文献   

17.
A novel CMOS linear programmable transconductor is presented. It is based on a telescopic cascode operational transconductance amplifier with source degeneration implemented by means of highly linear tunable active resistors. The transconductor has been designed in a 0.5 mum CMOS technology featuring a third-order intermodulation (IM3) of -54.8 dB at 10 MHz for a 1 Vpp output voltage. Its feasibility for Gm-C filter design has been experimentally validated with a 1 MHz tunable third-order Chebyshev lowpass filter suitable for Bluetooth applications.  相似文献   

18.
This brief presents a high-linearity operational transconductance amplifier (OTA) based on pseudodifferential structures. The linearity is improved by mobility compensation techniques as the device size is scaled down to achieve high speed operation. Transconductance tuning could be achieved by a MOS operating in the linear region. The OTA fabricated in the 0.18-mum CMOS process occupies a small area of 4.5 x 10-3 mm-2. The measured third-order intermodulation (IM3) distortion with a 400 mVPP differential input under 1-V power supply voltage remains below -52 dB for frequency up to 50 MHz. The static power consumption is 2.5 mW. Experimental results demonstrate the agreement with theoretical analyses.  相似文献   

19.
A micropower fourth-order elliptical switched-capacitor (SC) low-pass filter for biomedical applications has been designed and measured. The charge transfer error of an SC integrator using a transconductance amplifier is discussed. Also first-order noise and PSRR calculations are performed and compared with the results of simulations and measurements. The measurements show that by careful optimization of the gain bandwidth, slew rate, and gain of the amplifiers, high-performance low-power SC filters can be constructed. The cutoff frequency of the filter is 5 kHz, the ripple in the passband is 0.27 dB, and stopband rejection is 49 dB. The power consumption of the filter is 190 /spl mu/W with /spl plusmn/2.5-V power supplies. The dynamic range of the filter is 75 dB, and the total harmonic distortion over the whole passband range is below 0.25% for a 2-V/SUB pp/ input signal. The PSRR of the filter is above 40 dB at frequencies below 3 kHz.  相似文献   

20.
A CMOS 80-200-MHz fourth-order continuous-time 0.05/spl deg/ equiripple linear phase filter with an automatic frequency tuning system is presented. An operational transconductance amplifier based on transistors operating in triode region is used and a circuit that combines common-mode feedback, common-mode feedforward, and adaptive bias is introduced. The chip was fabricated in a 0.35-/spl mu/m process; filter experimental results have shown a total harmonic distortion less than -44 dB for a 2-V/sub pp/ differential input with a single 2.3-V power supply. The group delay ripple is less than 4% for frequencies up to 1.5 f/sub c/. The frequency tuning error is below 5%.  相似文献   

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