硅中离子注入RTA剩余损伤对p－n结反向漏电流的影响

采用静电计测量了ＢＦ￣＋２、Ｆ￣＋Ｂ￣＋和Ａｒ￣＋＋Ｂ￣＋注入硅ＲＴＡ二极管的反向漏电流；借助高压透射电镜观察了ＢＦ￣＋２、Ｆ￣＋＋Ｂ“和Ａｒ￣＋＋Ｂ￣＋注入硅ＲＴＡ剩余损伤；深入讨论了剩余损伤对二极管反向漏电流的影响。结果表明，１）ＢＦ￣＋２注入二极管的反向漏电流最小，２）注入层剩余损伤和ＲＴＡ期间导致的热应力可能是影响二极管反向漏电流的主要原因。     

P埋层技术研究

介绍了在Ｓｉ￣＋注入的ｎ－ＧａＡｓ沟道层下面用Ｂｅ￣＋或Ｍｇ￣＋注入以形成ｐ埋层。采用此方法做出了阈值电压０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ，也做出了夹断电压－０．４～－０．６Ｖ、跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。     

化学镀Ni—Cr—P合金工艺研究

论述了化学镀Ｎｉ—Ｃｒ—Ｐ合金的可行性，指出：镀液的配制方法对镀层含铬量有较大影响，将Ｃｒ￣（６＋）还原为Ｃｒ￣（３＋），并形成Ｃｒ￣（３＋）活性络离子后再加入镀液，控制其它条件在最佳范围，可使镀层含铬量达１％以上。镀液中的铬合剂、稳定剂对镀层质量、镀层组成、沉积速度有较大影响。化学镀过程中应严格控制ｐＨ值，因为它对沉积过程有极大影响。化学镀Ｎｉ—Ｃｒ—Ｐ合金镀层具有较小的电阻温度系数，适用于电子零部件的表面处理。     

形成优质Si~＋注入SI—GaAs层的研究

在ＧａＡｓ集成电路研制中需要高电激活率、高迁率的ｎ型薄层．本文研究了引Ｓｉ＋注入ＧａＡｓ形成的ｎ型层光电特性与材料参量、注入和退火条件的关系．结果表明材料生长中的杂质污染和缺陷对注入层电特性有直接影响．材料或退火过程中Ａｓ和Ｇａ的原子比［Ａｓ］／［Ｃａ］稍大时，注入层中电激活率和迁移率都高．实验还证明，２９Ｓｉ＋注入时ＢＦ＋束流的影响会使注入层电激活率和迁移率下降．本文指出注入时剂量不宜过大，白光快速退火时温度不宜过高，一般在９６０℃５秒退火为佳．     

GaAs低能Si^＋及SiF^＋离子注入研究

本文对３０ｋｅｖ Ｓｉ＾＋和分子离子ＳｉＦ＾＋注入半绝缘ＧａＡｓ的行为进行了研究对比。注入Ｓｉ＾２＋样品的Ｓｉ原子纵向分布与相同条件下用ＳＩＣＴ模拟程序理论计算出的分布相一致。经灯光９００℃１０″ＲＴＡ，电激活率可达６０％，电化学Ｃ－Ｖ测得的载流子纵向分布与注入态ＳＩＭＳ结果相同，可以获得近０．２μｍ的ＧａＡｓ有源层。而注入分子离子ＳｉＦ＾＋样品，虽注入层较浅，但灯光退火后，电激活率很低。因此，用     

n~＋p~＋p－n结隔离CMOS铝栅工艺

本文介绍一种新的ｎ￣＋ｐ￣＋ｐ－ｎ结隔离铝栅大规模集成电路工艺。它与常规铝栅ＣＭＯＳ工艺的重要区别在于，采用ｎ￣＋ｐ￣＋ｐ－ｎ结隔离技术，芯片上无低掺杂浓度区与厚的场氧化绝缘膜，场氧化膜与栅氧化膜在同一工序中完成并且厚度相接近。文中重点阐述了ｎ￣＋ｐ￣＋ｐ－ｎ结隔离击穿与ｎ￣＋，ｐ￣＋区掺杂浓度ｐ－ｎ结深度和器件特征尺寸之间的关系以及该工艺在电路中的应用等问题。     

Si~＋、As~＋双离子注入半绝缘GaAs的研究

本文采用Ｓｉ＋和Ｓｉ＋、Ａｓ＋单、双离子多重注入半绝缘砷化镓［ＨＢ－ＳＩＧａＡｓ（Ｃｒ）］．研究发现，双离子注入层经无包封快速热退火后，激活率和电子迁移率较单Ｓｉ＋注入样品明显提高．Ｒａｍａｎ谱显示结构完整性好，并且有好的载流子剖面分布．文中从化学计量比角度出发分析了激活率提高的原因和从注入离子增强扩散系数分布来解释了多重Ｓｉ＋、Ａｓ＋双注入的载流子浓度剖面分布．     

SIMOX材料制备中注入剂量优化研究

本文采用ＳＩＭＳ、ＴＥＭ、ＲＢ等测试手段，分析了注入剂量改变对ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔｅｄＯＸｙｇｅｎ）材料顶层硅和埋氧化层微结构的影响，研究结果表明，注入剂量低至０．６ｘ１０１８Ｏ＋／ｃｍ２时，经过１３００℃，６小时的高温退火过程，能形成界面清晰的三层结构，得到高结晶度的表面硅层，埋氧化层中存在尺寸较大的硅岛；标准注入剂量（１．８ｘ１０１８Ｏ＋／ｃｍ２）形成的ＳＩＭＯＸ材料表层硅出现明显的缺陷，分析结果表明，注入过程中表面存在的缺陷经高温退火后仍有部分残留，成为最终材料表面缺陷的原因之一；形成低表面缺陷和高绝缘性能埋氧化层的优化注入剂量在注入能形成连续氧化物的临界注入剂量左右。     

自对准GaAsMESFET的二维数值分析

本文对源漏ｎ＾＋浅结注入的自对准ＧａＡｓＭＥＳＦＥＴ内部的电位，电场及载流子浓度的稳态分布进行了二维数值分析，分析表明，不同ｎ＾＋注入深度对器件的特性有一定的影响。当ｎ＾＋注入深度为有源层厚度的１／４时，畴的体积最小。适当选取ｎ＾＋区边缘与栅之间的距离可提高器件的击穿电压。     

As^＋注入Si1—xGex中应变驰豫的双晶X射线衍射研究

作者首次用Ｘ射线双晶衍射技术对注入Ａｓ＾＋的Ｓｉ０．５７Ｇｅ０．４３合金的晶格损伤消除和应变驰豫进行了研究，并与未注入Ａｓ＾＋的Ｓｉ０＼５７Ｇｅ０＼４３合金的应变驰豫进行了比较。结表明，退火后，注入Ａｓ＾＋的 Ｓｉ１－ｘＧｅｘ外延层中的应变分布不同于未注入Ａｓ＾＋的应变分布。对于注入Ａｓ＾＋的Ｓｉ０．５７Ｇｅ０．４３样品，其Ｘ射线衍射峰的半宽度ＦＷＨＭ由于退火引起应变驰豫导致镶嵌结构的产生而展宽。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.