共享单车和铜铟镓硒薄膜太阳电池注定有缘

本文结合铜铟镓硒薄膜太阳电池的优点,分析了该种电池在共享单车领域的应用优势,在此基础上,分析了该种电池在共享单车领域的市场前景以及目前国内产量供给情况.     

共蒸发三步法制备CIGS薄膜的性质

采用PID温度控制器控制共蒸发设备中蒸发源及衬底加热的温度,以三步法工艺制备CIGS(Cu(In,Ga)Se2)薄膜,通过恒功率加热衬底测试温度的变化,可实现在线组分监测,得到CIGS薄膜的组成重现性很好.CIGS薄膜的表面光洁,粗糙度多数小于10nm.但是组成相同的CIGS薄膜,其结晶择优取向可能不同,主要有(112)和(220)/(204)两种;其结晶形貌也有很大的不同,晶粒粗大且成柱状的薄膜电池效率高,虽然从Cu/(In+Ga)＜1的组成可以认为CIGS薄膜为贫Cu结构,但Hall测试多数CIGS薄膜呈p型,少数呈n型.     

掺Na制备柔性聚酰亚胺衬底CIGS薄膜太阳电池

研究了Na掺入对低温沉积柔性聚酰亚胺(PI)衬底Cu(In,Ga)Se2(CIGS)薄膜的结构和电学特性影响。研究结果表明:Na元素的掺入使Ga元素的扩散受到了阻滞,但对CIGS薄膜晶粒尺寸没有明显的影响,少量的Na可提高CIGS薄膜的载流子浓度和降低电阻率;Na的掺入可明显提高CIGS薄膜太阳电池的器件特性,通过优化掺Na工艺,制备的柔性PI衬底—CIGS薄膜太阳电池的最高转换效率达到10.4%。     

共蒸发三步法制备CIGS薄膜的性质

采用PID温度控制器控制共蒸发设备中蒸发源及衬底加热的温度,以三步法工艺制备CIGS(Cu(In,Ga)Se2)薄膜,通过恒功率加热衬底测试温度的变化,可实现在线组分监测,得到CIGS薄膜的组成重现性很好.CIGS薄膜的表面光洁,粗糙度多数小于10nm.但是组成相同的CIGS薄膜,其结晶择优取向可能不同,主要有(112)和(220)/(204)两种;其结晶形貌也有很大的不同,晶粒粗大且成柱状的薄膜电池效率高,虽然从Cu/(In Ga)＜1的组成可以认为CIGS薄膜为贫Cu结构,但Hall测试多数CIGS薄膜呈p型,少数呈n型.     

CdS薄膜的结构特性及其对Cu(In,Ga)Se2(CIGS)薄膜太阳电池的影响

报道了CdS薄膜的CBD法沉积及其结构特性,其中的水浴溶液包括硫脲、乙酸镉、乙酸铵和氨水溶液.研究了水浴溶液的pH值、温度、各反应物溶液的浓度和滴定硫脲与倾倒硫脲等基本工艺参数对CdS薄膜结构特性的影响.其中,溶液的pH值对CdS薄膜的特性起着关键的作用.XRD图显示了随着溶液pH值的变化,薄膜的晶相由六方相向立方相转变.CdS薄膜的这两种晶相对CIGS薄膜太阳电池性能的影响不相同.c-CdS(立方相的CdS)与CIGS之间的晶格失配和界面态密度分别为1.419%和8.507×1012cm-2,而h-CdS(六方相的CdS)与CIGS之间的晶格失配和界面态密度则分别为32.297%和2.792×1012cm-2.高效CIGS薄膜太阳电池需要的是立方相CdS薄膜.     

聚酰亚胺衬底CIGS薄膜附着性的改善

为改善聚酰亚胺(PI)衬底Cu(In,Ga)Se2(CIGS)薄膜的附着性,提出在NaF沉积前预先在Mo层上蒸发沉积100nm厚的In-Ga-Se(IGS)薄膜的新掺Na工艺。结果表明:这种IGS-NaF-CIGS式新工艺可显著改善CIGS薄膜的附着,而且CIGS薄膜材料和器件特性没有显著退化;新工艺促进了NaInSe2的生成,减少了In-Se二元相的残余,但也造成薄膜电阻率的升高和电池填充因子的下降,进而导致制备的PI衬底CIGS电池的转换效率由9.8%降至9.0%。综合考虑附着性的改善和器件效率的轻微下降,新工艺利大于弊,有很好的应用前景。     

Cu(In1-xGax)Se2薄膜太阳电池的J-V特性

对Cu(In1-xGax)Se2(CIGS)太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数.采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好.对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因.     

硒化温度对Cu(In, Al)Se2薄膜结构和光学性质的影响

采用了磁控溅射制备Cu-In-Al金属前驱体薄膜,后硒化快速退火得到铜铟铝硒(Cu(In,Al)Se2,CIAS)薄膜.研究了硒化温度对CIAS薄膜晶体结构和光学性质的影响.研究发现CIAS薄膜的晶体结构依赖于硒化温度,其禁带宽度随硒化温度升高发生红移.研究结果表明,CIAS薄膜的最佳硒化温度为540℃,其晶体结构为纯黄铜矿结构,禁带宽度为.34 eV,对应太阳电池理论最大效率的吸收层材料禁带宽度     

CIGS薄膜(InGa)2Se3-富Cu-富In(Ga)的演变

采用三步共蒸发工艺顺序沉积铜铟镓硒(CuInGaSe2,CIGS)薄膜.薄膜的厚度、组份、晶相结构分别由台阶仪、X射线荧光光谱仪(XRF)和X射线衍射仪(XRD)来表征.在(In,Ga)2Se3预制层-富Cu相的演变过程中,依次发生以下相变:Cu(In,Ga)5Se8、Cu(In,Ga)3Se5、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)Se2(液相CuxSe).在富Cu相-富In(Ga)相的演变过程中,依次发生以下相变:Cu(In,Ga)Se2(液相CuxSe)、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)3Se5、Cu(In,Ga)5Se8.对这两个演变过程中薄膜的生长机理和结构特性进行了讨论.     

CdS薄膜的结构特性及其对Cu(In,Ga)Se2(CIGS)薄膜太阳电池的影响

报道了CdS薄膜的CBD法沉积及其结构特性,其中的水浴溶液包括硫脲、乙酸镉、乙酸铵和氨水溶液.研究了水浴溶液的pH值、温度、各反应物溶液的浓度和滴定硫脲与倾倒硫脲等基本工艺参数对CdS薄膜结构特性的影响.其中,溶液的pH值对CdS薄膜的特性起着关键的作用.XRD图显示了随着溶液pH值的变化,薄膜的晶相由六方相向立方相转变.CdS薄膜的这两种晶相对CIGS薄膜太阳电池性能的影响不相同.c-CdS(立方相的CdS)与CIGS之间的晶格失配和界面态密度分别为1.419%和8.507×1012cm-2,而h-CdS(六方相的CdS)与CIGS之间的晶格失配和界面态密度则分别为32.297%和2.792×1012cm-2.高效CIGS薄膜太阳电池需要的是立方相CdS薄膜.     

薄膜太阳能电池的研究进展

薄膜太阳能电池是缓解能源危机的新型光伏器件。评述了薄膜太阳能电池的优缺点,主要介绍了薄膜硅太阳能电池、多元化合物薄膜太阳能电池和有机薄膜太阳能电池的研究现状,总结了它们各自在价格成本、光电转换效率及对环境影响等方面的特点,并对其发展趋势进行了展望。     

近空间升华法制备高取向硒化锑薄膜太阳电池

硒化锑太阳电池以其原材料丰富、工艺简单和结 构稳定等优势,近年来得到了快速发 展。本论文采用近空间升华法制备硒化锑光电薄膜,并对硒化锑的生长进行了机理研究和参 数优化。结果显示:衬底温度的提升有助于硒化锑薄膜的晶化。当衬底温度为 340 ℃时,薄 膜具有较高的晶化率和致密的表面形貌。另一方面,蒸发间距的改变能够调制硒化锑薄膜的 择优取向。当蒸发间距为10 mm时,薄膜具有明显的(002)取向的择优,对应(Sb₄Se₆)n带 垂直于衬底生长,使硒化锑光吸收层具有优异的载流子传输特性。将优化好的硒化锑薄膜应 用到太阳电池中,以FTO/CdS/Sb₂Se₃/P3HT/C的器件结构,获得了5.78%的光电转换效率,其 中开路电压为0.375 V,短路电流密度为28.01 mA/cm²,填充因子为54.94%。以上研究为高 取向性硒化锑太阳电池的优化制备提供了技术路线,并显示出了硒化锑太阳电池的研究潜力 。     

Chemical incorporation of copper into indium selenide thin‐films for processing of CuInSe2 solar cells

A chemical method of incorporating copper into indium selenide thin‐films has been investigated, with the goal of creating a precursor structure for conversion into CuInSe₂ (CIS) layers suitable for solar cell processing. The precursor and converted layers have been investigated with scanning electron microscopy (SEM), X‐ray diffraction (XRD), Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS). From these measurements, the incorporation of copper into the indium selenide layers is concluded to proceed by an ion‐exchange reaction. This reaction results in the formation of a precursor layer with a graded compositional depth‐profile containing the crystalline phases In₂Se₃ and Cu_2−xSe. Selenisation of the precursor layer homogenises the composition and forms chalcopyrite CIS. These CIS layers exhibit a dense microstructure with rough surface morphology, which is ascribed to a non‐optimal selenisation process. Solar cells with the structure ZnO: Al/i‐ZnO/CdS/CIS/Mo/glass have been processed from the selenised layers and have exhibited efficiencies of up to 4% under simulated AM1·5 illumination. Copyright © 2008 John Wiley & Sons, Ltd.     

Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH₃ incorporated TFTs is significantly improved from 2.8 to 1.0 V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses, Zn-N and O-H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia.     

Transport properties of copper indium aluminum selenide thin films deposited by successive Ionic layer adsorption and reaction

Cu(InAl)Se₂ (CIAS) thin films have been prepared by successive ionic layer adsorption and reaction (SILAR) technique on well-cleaned glass substrates. The structure, composition, morphology, optical, electrical, and Hall effect studies of prepared thin films have been studied. X-ray diffraction studies confirmed the polycrystalline nature of the thin films with a chalcopyrite structure. Scanning electron microscopy studies revealed that the morphology of the prepared films was smooth, dense, uniform, and granular. Composition of various constituents such as Cu, In, Al, and Se in the CIAS films has been determined from energy dispersive x-ray analysis. Optical properties have been studied in detail from the transmittance spectra in the visible and near infrared region and the optical transition has been found to be direct and allowed with the band gap of around 1.16–1.50 eV. Electrical analysis helps to identify that in high temperature region the conductivity is attributed due to thermal excitation of the charge carriers from grain boundaries to the neutral region of the grains. Transport properties of CIAS thin films have been studied in the temperature range 298–398 K and the transport parameters are evaluated and reported in this paper in detail.     

Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm–40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV–1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Ω cm–33.0 Ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS_0.9Se_0.1 have exhibited maximum output, a V_OC of 0.74 V, J_SC of 18.50 mA cm^?2, ff of 0.75 and efficiency of 11.40% for 60 mW cm^?2 illumination.     

硒化锑薄膜光伏性能调控研究进展

硒化锑太阳能电池具有较高的理论转换率,是近年来颇受关注的太阳能电池之一。人们在研究过程中发现硒化锑薄膜性能受到多重因素影响。本文从退火工艺、组成和微结构等方面阐述关于它们对硒化锑薄膜光伏性能的影响的最新研究进展,并分析原因,提出了增强硒化锑薄膜光伏效应的建议及研究方向。     

Cu_2ZnSn(S,Se)_4薄膜太阳能电池的研究进展

锌黄锡矿结构的Cu_2Zn Sn(S,Se)_4(CZTSSe)材料,由于具有价格低廉、带隙合适、吸光系数高等优良光电性能,很适合作为新一代无机薄膜太阳能电池的吸光层材料,已受到各国科研人员的高度关注。国内外采用多种沉积薄膜技术来制备CZTSSe吸光层材料,主要包括真空和非真空方法。综述了最近CZTSSe太阳能电池制备技术所取得的一些进展,尤其对采用溶液法制备CZTSSe太阳能电池的发展现状做了重点阐述。展望了CZTSSe太阳能电池的发展趋势。     

氧分压对铟镓锌氧薄膜晶体管性能影响

采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT),通过调节IGZO薄膜工艺中氧分压,研究不同氧分压对TFT器件电学性能的影响。实验结果表明,所有器件都展现出良好的电学特性,随着氧分压从10%增加到50%,TFT的阈值电压由0.5 V增加到2.2 V,而亚阈值摆幅没有发生变化。在栅极施加30 V偏压3600 s后,随着氧分压的增加,阈值电压向正向的漂移量由1 V增加到9 V。经过分析得出高氧分压的IGZO-TFT器件中载流子浓度低,建立相同导电能力的沟道时所需要栅极电压会更大,阈值电压会增加。而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态,栅介质层(GI)会俘获更多的电子,造成阈值电压漂移量较大的现象。