共查询到13条相似文献,搜索用时 62 毫秒
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提出了一种新的方法对短沟道SOI MOSFETs亚阈区的二维表面势的解析模型进行了改进,即摄动法.由于在短沟道SOI MOSFETs中不仅需要计及不可动的电离杂质,而且需要考虑自由载流子的数量和分布的影响.利用摄动法求解非线性泊松方程可以得到短沟道SOI MOSFETs二维的表面势解析模型.通过与二维数值模拟器MEDICI模拟结果比较,证明了在亚阈区改进模型所得的结果比只计及不可动的电离杂质的SOI MOSFETs模型所得的结果吻合更好. 相似文献
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随着微电子技术进入纳米领域,功耗成为制约技术发展的主要因素,因此,低功耗器件成为半导体器件领域的研究热点。负电容场效应晶体管基于铁电材料的负电容效应可有效地降低器件的亚阈值摆幅,从而降低器件的功耗。该文设计了一种基于绝缘体上硅(SOI)结构的铁电负电容场效应晶体管,利用TCAD Sentaurus仿真工具对负电容晶体管进行仿真研究,得到了亚阈值摆幅为30.931 mV/dec的负电容场效应晶体管的器件结构和参数。最后仿真研究了铁电层厚度、等效栅氧化层厚度对负电容场效应晶体管亚阈值特性的影响。 相似文献
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利用MOS管亚阈值特性,构造了输入输出均为电流信号的模拟乘法器;经过变形,设计了模拟概率计算电路.以此为基础,通过晶体管级的模拟电路设计,构造了新型的网格码模拟译码器,给出了模拟译码器的译码性能.模拟结果表明,在速度一定的条件下,与采用数字电路实现的概率译码器相比,该模拟译码器在功耗和芯片面积上至少减少了一个数量级. 相似文献
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n型纳米非对称双栅隧穿场效应晶体管(DG-TFET)速度快、功耗低,在高速低功耗领域具有很好的应用前景,但其阈值电压的表征及其模型与常规MOSFET不同.在深入研究n型纳米非对称DG-TFET的阈值特性基础上,通过求解器件不同区域电场、电势的方法,建立了n型纳米非对称DG-TFET器件阈值电压数值模型,探讨了器件材料物理参数以及漏源电压对阈值电压的影响,通过与Silvaco Atlas的仿真结果比较,验证了模型的正确性.研究表明,n型纳米非对称DG-TFET的阈值电压分别随着栅介质层介电常数的增加、硅层厚度的减薄以及源漏电压的减小而减小,而栅长对其阈值电压的影响有限.该研究对纳米非对称DG-TFET的设计、仿真及制造有一定的参考价值. 相似文献
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An analytical subthreshold surface potential model for short-channel pocket-implanted (double-halo) MOSFET is presented. The effect of the depletion layers around the source and drain junctions on channel depletion layer depth, which is very important for short-channel devices, is included. Using this surface potential, a drift-diffusion based analytical subthreshold drain current model for short-channel pocket-implanted MOSFETs is also proposed. A physically-based empirical modification of the channel conduction layer thickness that was originally proposed for relatively long-channel conventional device is made for such short-channel double-halo devices. Very good agreement for both the surface potential and drain current is observed between the model calculation and the prediction made by the 2-D numerical device simulation using Dessis. 相似文献
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基于泊松方程和边界条件,推导了对称三材料双栅应变硅金属氧化物半导体场效应晶体管(MOSFET:metal oxide semiconductor field effect transistor)的表面势解析解.利用扩散-漂移理论,在亚阈值区电流密度方程的基础上,提出了亚阈值电流与亚阈值斜率二维解析模型.分析了沟道长度、功函数差、弛豫SiGe层的Ge组份、栅介质层的介电常数、应变硅沟道层厚度、栅介质高k层厚度和沟道掺杂浓度等参数对亚阈值性能的影响,并对亚阈值性能改进进行了分析研究.研究结果为优化器件参数提供了有意义的指导.模型解析结果与DESSIS仿真结果吻合较好. 相似文献
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提出了一种新的全耗尽SOI MOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层-硅界面处的电势最小值用于监测SOI MOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOI MOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性. 相似文献
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提出了一种新的全耗尽SOI MOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层-硅界面处的电势最小值用于监测SOI MOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOI MOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性. 相似文献
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A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation. 相似文献
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A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fiRing-parameters, and verified by the 3-D numerical simulation. 相似文献