基于DG5252塔康信标模拟信号发生器的设计与实现

为了解决传统塔康模拟设备存在造价昂贵、无法通过软件在线升级等缺陷,设计基于 DG5252 塔康信标模拟信号发生器。通过上位机软件与 DG5252 进行数据交互,模拟塔康模拟设备部分功能。经测试,该塔康信标模拟信号发生器模拟效果良好,具有较强的使用价值。     

塔康信标智能化控制系统分析与实现

以现代塔康信标为主要参照物，介绍了塔康信标智能化控制系统硬件配置，分析了塔康信标智能化控制系统软件设计思想，并且着重阐述了塔康信标智能化控制系统的各种检测及控制权的归属，以及对信标应答器、监测器的评估方法。其设计思想是现代塔康信标控制系统的发展趋势，对其它现代无线电导航信标控制系统的设计具有较大的参考价值。     

采用高增益塔康天线构建战术导航网

通过对塔康导航系统作用距离的估算,得出提高塔康导航系统作用距离的有效措施是提高塔康系统地面信标天线的增益,建议塔康地面信标采用高增益塔康天线构建战术导航网络。     

基于SoPC的脉冲发生器

为了给分布式拉曼测温系统中的激光器提供激励源,设计一个稳定性好、纳秒级脉宽、周期可控、占空比可调的高速脉冲发生器.以Altera公司的CycloneⅡ系列的EP2C5Q208C8为核心的核心板和一些外围器件组成硬件电路.高速脉冲发生器是在Quartus Ⅱ软件平台下,使用VHDL在FPGA上用硬件逻辑电路设计.脉冲发生器控制系统是利用Quartus Ⅱ开发软件和其中集成的SoPC Builder系统开发工具进行设计.实验结果表明,该脉冲发生器稳定输出脉宽为10～500 ns,周期为1 μs～1 ms,占空比可调的窄脉冲,满足分布式拉曼测温系统的要求.     

机载塔康无源自身导航可行性探讨

本文提出一种利用塔康机载接收机方位测量功能实现飞机电磁静默条件下无源自身导航的方案。该方案利用两台小型机载塔康设备接收机，分别接收地面两个已知位置坐标的塔康信标发射的方位信息，来推算飞机相对塔康信标发射机的相对位置，从而实现飞机的无源自身导航。     

卫星测控系统新型校相体制的研究与实现

在许多卫星测控系统中,使用标校塔信标信号进行自动校相,存在一定的局限性,如无法设置标校塔、信号质量不好、标校塔维护困难等。为了克服这些局限性,研究了一种新的校相体制,设计了地面校相信号模拟源,产生校相所需的信号,进行自动校相。从理论上分析,设计的校相信号模拟源完全能满足系统自动校相的精度要求。该校相体制可以应用于许多测控系统中,对研究测控系统的无塔标校具有指导意义。     

增强型塔康信标天线

塔康信标天线直接影响塔康系统的作用距离和测位精度。现有塔康信标天线存在调制电路损耗与调制方向图衰减等固有特性，造成地面设备需求的发射功率大，并且覆盖距离内往往存在无法测距的“零陷区”。本文提出应用收、发波束分离原理的两种增强型塔康天线概念，可望有效改善或解决这些问题。     

基于FPGA的FSK调制与解调器设计

在EDA技术开发平台Quartus Ⅱ上设计实现了一种新型的2FSK信号调制解调器,利用m序列的随机性和确定性来产生输入基带信号,用分频器把时钟信号分频成两个不同频率的信号.详细介绍了基于FPGA的2FSK信号发生器的设计方法,提供了VHDL源代码在Quartus Ⅱ环境下的仿真结果.整个系统的功能在EDA技术开发平台上均调试通过,并在ACEX1K系列FPGA上硬件实现,具有较高的实用性和可靠性.     

基于FPGA LPM多功能信号发生器设计

以FPGA芯片为载体,通过QuartusⅡ的LPM_ROM模块和VHDL语言为核心设计一个多功能信号发生器,根据输入信号的选择可以输出递增锯齿波、递减锯齿波、三角波、阶梯波和方波等5种信号,通过QuartusⅡ软件进行波形仿真、定时分析,仿真正确后,利用实验板提供的资源,下载到芯片中实现预定功能。     

DDS技术实现可调信号发生器

介绍采用DDS技术、FPGA芯片和D/A转换器,设计一个频率、相位可控的多种输出波形信号发生器。基于QuartusⅡ软件设计实现,并下载至FPGA器件,使用SignalTapⅡ嵌入式逻辑分析仪进行实时测试。经过软件仿真和电路测试,输出波形达到了技术要求,能够满足多种试验的需要,且性能稳定,使用灵活,节约试验成本。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.