利用真空变温薄膜电阻实验仪测量热电材料特性参数

利用北京交通大学理学院自主开发的VTR10型真空变温薄膜电阻实验仪对热电材料的热电阻率进行了多次测量,并用该装置精确测定了热电材料的塞贝克系数,得到了热电材料的电阻率随温度变化的曲线和塞贝克系数随温度变化的曲线.     

新型超导体MgCNi3的输运性质研究

测量了新型超导体MgCNi3(Tc=8K)的电阻率、正常态Hall效应和热电势等输运性质.电阻率温度曲线表明,在高于70K的温区可以用电声子散射的BlochGr櫣ｎｅｉｓｅｎ公式拟合.Hall系数RH和热电势S在Tc以上的整个温度范围都为负值,强烈表明MgCNi3的载流子类型为电子型.RH在从Tc到140K的温区内基本不随温度变化,但在140K到室温范围,RH随温度升高其绝对值减小,对RH的这种温度依赖关系进行了讨论.S在150K以上近似与温度成线性关系,而在150K以下显示非线性,用电声子相互作用的重整 关键词： 电阻率 热电势 Hall效应     

Sm2-xCexCuO4单晶的赝能隙行为研究

我们在电子型超导体Sm1.85Ce0.15CuO4中首次观察到赝能隙的证据.研究了在O2中不同退火时间,单晶Sm1.85Ce0.15CuO4样品的电阻率ρ和热电势S,电阻率ρ的测量结果显示退火后样品高温区电阻率ρ、dρ/dT和热电势的斜率dS/dT斜率增加,意味着载流子浓度下降,与减小Ce掺杂量x的作用等效.所有的样品S～T和ρ～T曲线在某个温度T*下都发生斜率的改变,该转变温度随着退火时间的增加而向高温区移动,而且越来越明显.这可能是因为该温度下赝能隙被打开,热电势曲线在某个温度下存在一个最小值,这是载流子局域化的表现;热电势曲线上50K附近观察到一个明显的声子曳引峰,正的峰值表示载流子符号在低温区发生了改变,即由高温的电子型变为低温的空穴型,与霍尔系数实验中斜率变化一致.     

Sn-Bi合金熔体可逆液液结构转变的研究

本文采用直流四电极电阻法研究了Sn-Bi系合金熔体在连续几轮的升降温过程中电阻率随温度的变化规律.结果表明,Sn-Bi合金熔体在连续几轮的升降温过程都出现了电阻率随温度的异常变化.由于电阻率是结构敏感物理参数之一,电阻率随温度的异常变化间接表明合金熔体发生了温度诱导的液态结构转变,而且转变具有一定的可逆性.对比纯锡和纯铋的电阻率实验结果,可以认为结构转变的可逆性主要与合金中Sn的有关.     

NaxCoO2晶体的制备、结构和物性

本文以氢氧化钠(NaOH)为溶剂,用高温溶液电解法成功生长出了α相和γ相的NaxCoO2单晶.通过少量SrCO3的添加,可以人为控制晶体产品的晶体学相.以NaOH为溶剂生长出γ相NaxCoO2晶体,添加SrCO3则生长出α相NaxCoO2晶体.对单晶样品的电阻率的测量发现,α相NaxCoO2的电阻率随温度降低而升高,呈半导体特性,而γ相NaxCoO2的电阻率则随温度降低而降低,呈金属性.α相NaxCoO2的热电势低于同温度下γ相NaxCoO2热电势,在300K时分别为30μV/K和70μV/K左右,但均随温度降低而减小,即热电势的温度关系均表现为金属型行为.     

新型超导体MgB2的热电势和电阻率研究

测量了MgB₂的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T²依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度T_c(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能E_F、能带宽度 关键词： 新型超导体 热电势 电阻率     

新型超导体MgB_2的热电势和电阻率研究

测量了MgB-2的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T2依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度Te(零电阻36.6K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能EF、能带宽度等.     

烧结温度对La0.1Sr0.9TiO3陶瓷热电性能的影响

利用传统固相反应方法, 分别在1440℃, 1460℃, 1480℃和1500℃烧结条件下, 制备了钙钛矿结构的La_0.1Sr_0.9TiO₃陶瓷样品. 样品的粉末X射线衍射结果显示, 不同烧结温度的La_0.1Sr_0.9TiO₃ 陶瓷样品均为单相的正交结构. 从样品的扫描电子显微照片来看, 随着烧结温度的增加, 平均晶粒尺寸逐渐增大. 在室温至800℃的测试温区, 测试了样品的电阻率和Seebeck系数, 系统地研究了不同烧结温度对样品热电性能的影响. 结果表明, 样品的电阻率在测试温区内随着测试温度的升高先略微降低, 然后逐渐升高;总体来看, 样品的电阻率随烧结温度的升高先增大后降低. 在测试温区内, Seebeck系数均为负值, 表明样品的载流子为电子; 随着测试温度的升高, Seebeck系数绝对值均有所增大;随烧结温度升高, Seebeck系数绝对值逐渐增大后显著降低. 1480℃制备的样品因其相对较低的电阻率和相对较高的Seebeck系数绝对值, 在165℃时得到最大的功率因子21 μW·K^-2·cm^-1.     

无序度对Au/Pd膜热电势的影响

我们用磁控溅射的方法制备了一系列无序度不同的Au50Pd50膜。在13K－300K的温度范围内，我们对不同无序度Au50Pd50膜的电阻率、热电势作了系统的测量，发现热电势随无序度的增加而减小，其温度依赖关系与同种成份的晶态合金的热电势温度依赖关系也很不相同。本文初步分析和讨论了其物理原因。     

不同退火条件下Nd1.85Ce0.15CuO4-δ单晶输运性质的研究

本文测量了电子型高温超导体Nd1.85Ce0.15 CuO4-δ单晶在不同退火条件下的ab面电阻率(ρ)和热电势(S).电阻率曲线偏离了费米液体理论T2的温度依赖关系和热电势在整个测量温区(15～300 K)都为正值表明在这一体系中有两种载流子共存.基于此,我们提出了一个空穴型窄带叠加在一个电子型宽带的双能带模型.进一步的退火处理实验表明:这一理论模型能很好的解释电阻率和热电势在不同退火条件下的行为,并有助于我们分析在不同退火过程中能带的结构和填充位置的变化.在深度去氧退火过程中,能带结构保持不变的但能带填充度增加使得费米能(EF)上升了;在加氧退火过程中EF位置不变而空穴型窄带变宽了.     

Temperature dependence of transport coefficients in liquid and amorphous metals

We apply the muffin-tin effective medium approximation to calculate the temperature dependence of the resistivity and thermopower of amorphous and liquid metals. The results show unambiguously that a large resistivity is accompanied by a negative temperature coefficient, in agreement with the experimental situation. This behavior is shown to result from a pseudo-gap which opens in the one-particle spectrum due to strong scattering at the quasi zone boundary and which tends to close under an increase in temperature. In turn the thermopower is found to have non-trivial density and temperature dependences.     

La2-xBaxCuO4单晶反常的正常态输运性质研究

测量了La2-xBaxCuO4系列单晶样品的电阻率和热电势,我们发现,当＝0．125（x＝1／8）时,La2-xBaxCuO4的截流子是所有样品中局域化最强的,但数据分析结果显示,它又是弱域化行为,文中我们讨论了Tc的被压制的原因,得出这可能与低温下LTO到LTT的结构相变,空穴与自旋的静态条纹有序有关,热电势结果观察不到任何声子曳引的痕迹,表明在LBCO体系中电声子的相互作用很弱。     

Diffusion thermopower of a two-dimensional hole gas in SiGe in a quantum Hall insulating state

Both the temperature dependence of resistivity and thermopower of a two-dimensional hole gas in SiGe show a reentrant metal-insulator transition at filling factor nu=1.5, but with strikingly different behavior of the two coefficients. As the temperature is decreased in the insulating state, the resistivity diverges exponentially while the thermopower decreases rapidly, suggesting that the insulating state is due to the presence of a mobility edge rather than a gap at the Fermi energy.     

Anisotropic growth of indium antimonide nanostructures

InSb nanostructures have been synthesized by the use of gas aggregation process. Nanoparticles with different shapes are obtained by controlling the growth and deposition temperature of the InSb nanoclusters. Triangular nanocrystals are commonly observed when the clusters are extracted from the condensation chamber of the source and deposited on the room temperature substrate at high vacuum. When the deposition is performed inside the condensation chamber at high temperature near the melting point of bulk InSb, nanoparticles formed on the substrate surface show several kinds of 3-dimensional morphologies, such as triangular or rectangular prisms, as well as hexagonal tablets. Keeping the same conditions for the cluster source operation and deposition, after long time growth, nanorods with hexagonal and quadrangular cross sections are formed through vapor-liquid-solid (VLS) process. The origin of the difference on the morphologies and shapes of the nanostructures is attributed to the anisotropic growth of InSb, which is temperature dependent.     

Some problems in understanding the electronic transport properties of carbon nanotube ropes

The resistance of single-wall carbon nanotube (SWCN) ropes or mats, and some individual tubes, typically shows a crossover from non-metallic to metallic temperature dependence as temperature increases. This systematic pattern is consistent with a series heterogeneous model involving metallic resistance and tunnelling through barriers such as defects and inter-rope contacts. The metallic resistivity term increases linearly with temperature for the ropes or mats, but faster for the individual nanotubes. In contrast to the almost vanishing thermoelectric power expected from electronic band structure calculations, the measured values for mats or films (including recent measurements in a vacuum) are even larger than for typical metals. The thermopower increases with temperature as for metals, but has a characteristic non-linear shape. This temperature dependence can be modelled, for example, with parallel conduction in metallic and semiconducting tubes, but the size of the metallic thermopower required is anomalously large.     

Abnormal resistivity behavior of Cu–Ni and Cu–Co alloys in undercooled liquid state

The resistivity behavior of undercooled liquid Cu–Ni and Cu–Co alloys had been studied in the contactless method, to probe the structure transition in undercooled melts during the cooling process. Over the entire concentration range, linear behavior of resistivity with temperature was obtained in liquid and undercooled liquid Cu–Ni system. It implied that the formation of icosahedral order might not influence the electron scattering in undercooled liquid Cu–Ni alloys. Similar results were obtained in Cu–Co system in the vicinity of liquidus temperature. A turning point was obvious in temperature coefficient of resistivity for undercooled liquid Cu–Co alloys around the bimodal line, which was interpreted to be responsible for metastable liquid–liquid phase separation. During liquid phase separation process, resistivity decreased and the temperature coefficient of resistivity was larger than that of homogeneous melts. In combination with transmission electron microscopy and scanning electron microscope studies on the as-solidified microstructure, this was interpreted as the formation of egg-type structure and concentration change in Cu-rich and Co-rich phases. The mechanism controlling the separation and droplets motion was also discussed in undercooled liquid Cu–Co system.     

High-temperature abnormal behavior of resistivities for Bi–In melts

The patterns of electrical resistivities versus temperature in large temperature range have been studied, using the D.C. four-probe method, for liquid Bi–In alloys (Bi–In(33 wt%), Bi–In(38 wt%), Bi–In(50.5 wt%), Bi–In(66 wt%)). The clear turning point of each resistivity–temperature curves of the liquid Bi–In alloys is observed at the temperature much above the melting point, in which temperature range the resistivity–temperature coefficient increases rapidly. Except for the turning temperature range, the resistivities of Bi–In alloys increase linearly with temperature. Because resistivity is sensitive to the structure, this experiment shows the structural transition in Bi–In melts at the temperature much higher than the liquidus. And it is suggested that there are different Bi–In short-range orderings in different Bi–In melts, so the resistivity–temperature curves have the turns at different temperatures and the resistivity–temperature coefficients are also different.     

Decreasing electrical resistivity of gold along the melting boundary up to 5 GPa

ABSTRACT

The electrical resistivity of gold was experimentally measured at high pressures from 2 to 5?GPa and temperatures ～300?K above melting. The resistivity decreased as a function of pressure and increased as a function of temperature as expected. The temperature dependence of resistivity in the solid and liquid phases are comparable to 1?atm results. The observed melting temperatures at each pressure agree well with previous experimental and theoretical studies. The essential result of this study is that resistivity decreases along the pressure-dependent melting boundary, conflicting with a prediction of invariant behavior as reported in the literature. This result is discussed in terms of the interaction between s and d-bands as both pressure and temperature increase along the melting boundary. The thermal conductivity of gold was calculated from the measured electrical resistivity using the Wiedemann-Franz law. The temperature-induced effect on the thermal conductivity at high temperatures is as expected in both the solid and liquid phase while the pressure-effect shows some variability.     

Resistance,magnetoresistance, and thermopower of zinc nanowire composites

We report a very large enhancement of the thermopower of 4 nm diameter metallic Zn nanowires, with a temperature dependence that is consistent with that of their electrical resistivity and the Mott formula. The temperature dependence of the resistance, magnetoresistance, and thermopower of composites consisting of 15, 9, and 4 nm diameter Zn nanowires imbedded in porous host materials is reported. The 15 nm wires are metallic. The smaller wires show 1D weak localization, but the electrical resistivity mostly follows a T(-1/2) law, and the thermopower of the 4 nm wires saturates at -130 microV/K.