不同退火温度对HfO_2薄膜结构和性能的影响

采用等离子增强蒸发镀膜方法在石英玻璃上制备了HfO_2薄膜,并进行了退火实验。利用X射线衍射(XRD)、纳米压入仪、紫外-可见分光光度计等分别研究了不同退火温度对HfO_2薄膜表面硬度、晶体结构和光学性能的影响。结果发现:未退火的HfO_2薄膜为非晶结构,退火之后,薄膜变为多晶结构,呈现出(002)晶面择优生长;随着退火温度的增加,膜层的表面硬度有明显提高;退火后,可见光波段和近红外波段透过率没有明显的变化。     

掺杂工艺对Al-F共掺ZnO薄膜性能的影响

采用溶胶-凝胶旋涂工艺在普通玻璃基片上制备出Al-F共掺杂ZnO薄膜,共掺杂离子浓度从0．25％增加到1．25％,退火气氛分别为空气、氢气和氩气,退火温度均为450℃。利用SEM测试方法研究了共掺杂离子浓度和退火气氛对薄膜表面形貌的影响;用紫外-可见分光光度计及四探针法等仪器对其对其透光性以及电阻率进行了测试,进一步研究了退火气氛对薄膜光电性能的影响。结果表明：制备的Al-F共掺杂ZnO薄膜多数表面平整,晶粒致密均匀;各种气氛下制备的薄膜在可见光大部分范围内透过率均超过80％;通过比较不同气氛下各种薄膜的电阻率,得知在H2气氛中退火处理后其电阻率最低为9．36×10^-2Ω·cm;与单一掺杂Al离子或F离子的薄膜相比较,Al—F共掺ZnO薄膜电阻率最低。     

烧结温度对ZrO2薄膜表面形貌及力学性能的影响

采用溶胶-凝胶法在玻璃基体表面制备了经300℃,400℃和500℃烧结热处理的ZrO2薄膜.利用X射线衍射仪、原子力显微镜和纳米压痕仪研究了烧结温度对ZrO2薄膜表面形貌和力学性能的影响.实验结果表明,随着烧结温度的增加,ZrO2的晶体结构由少量的单斜晶相逐渐转变为单斜晶相和四方晶相的混合相.薄膜表面形貌逐渐改善,薄膜的表面粗糙度和颗粒度依次减小,薄膜的表面粗糙度分别为10.5 nm、7.2 nm和5.6 nm,ZrO2的粒径分别为188 nm、153 nm和130 nm.ZrO2薄膜的弹性模量和硬度都显著提高,薄膜的弹性模量分别为89.6 GPa、114.2 GPa和128.9 GPa,薄膜的硬度分别为7.6 GPa、10.3 GPa和15.1 GPa.     

退火时间对Bi/Te多层薄膜结构和热电性能的影响

采用磁控溅射法在玻璃衬底上室温沉积厚度不同的Bi/Te多层薄膜,在氩气保护下对薄膜在150℃进行不同时间退火处理,研究了退火时间对Bi/Te多层薄膜物相组成、微观形貌、表面粗糙度和热电性能的影响。结果表明:退火过程使Bi、Te原子在相邻单质层界面上产生了强烈的扩散反应,生成以Bi_2Te_3为主相的Bi-Te化合物;随退火时间的延长,薄膜的界面空洞增多,表面粗糙度变大。短时间退火可提高薄膜的热电性能;而随退火时间的延长,量子尺寸效应逐渐显现,薄膜的载流子浓度、迁移率、电导率和Seebeck系数均出现明显的振荡现象,沉积的单质层越厚,振荡周期越大。     

退火气氛对溶胶-凝胶法制备ZnO∶Sn薄膜性能的影响

采用溶胶-凝胶法以旋涂的方式在石英玻璃上制备锡掺氧化锌(ZnO∶Sn)透明导电薄膜,在不同的退火气氛下对薄膜进行热处理,以此研究退火气氛对薄膜的微观结构和光电性能的影响。通过X射线衍射仪、扫描电子显微镜、紫外-可见分光光度计和四探针测试仪等手段对薄膜样品进行分析表征,实验表明:不同气氛条件下热处理的ZnO∶Sn薄膜仍为六方纤锌矿结构并沿c轴择优生长,且在可见光范围(400~900 nm)样品的平均透过率均超过80%。其中,在氮气气氛下退火处理的薄膜电阻率减小至3.152×10~(-2)Ω·cm,在惰性气体中热处理有效提高了薄膜的光电特性。     

高硬度硅橡胶耐热性能与压缩回弹性能的改善

研究了Al2O3和气相法白炭黑对硅橡胶的增强作用,考察了表面处理Al2O3对不同硬度硅橡胶性能的影响。结果表明,Al2O3增强的硅橡胶老化前后的性能均优于白炭黑填充体系。Al2O3经硅烷偶联剂处理后提高了表面活性。不同硬度混炼胶的并用,可使硅橡胶硬度、耐热性和压缩回弹性满足使用要求。     

镁合金电镀Ni-Al_2O_3薄膜的研究

采用电镀方法对镁合金进行表面镀膜处理,间接提高其硬度和耐蚀性。借助硬度计和浸泡法对表面电镀Ni-Al2O3薄膜的镁合金的硬度和耐蚀性进行了测试。结果表明:表面镀膜能一定程度提高镁合金基体的硬度和耐蚀性,但此两项性能的彰显受电镀参数的影响。加载适宜的电流密度且电极水平面对面放置时,表面电镀Ni-Al2O3薄膜的镁合金的硬度较高,耐蚀性也较好。     

退火对机加工ZTM／SiCp陶瓷力学性能的影响

本文对电熔莫来石为基体制备的热压ZTM/SiCp陶瓷加工后进行退火处理,对其常温力学性能及表面形态的变化进行了研究,证明了经过退火处理后的机加工试样,表面有玻璃相析出,同时常温断裂强度有一定程度上升。认为退火处理对机加工ZTM/SiCp陶瓷产生两种作用:1.表面机加工裂纹的愈合或钝化;2.机加工表面残余应力的消除。     

TiO2薄膜的相变与光学性能

采用射频磁控溅射法在单晶硅片和石英玻璃片上沉积TiO2薄膜.通过X射线衍射、原子力显微镜、X射线光电子能谱、紫外可见光谱和荧光发射光谱对薄膜的结构、相组成和表面形貌进行了表征.研究了退火温度对薄膜相结构、表面化学组成、形貌及光学性能的影响.结果表明:沉积的TiO2薄膜为无定形结构,经400℃以上退火后的薄膜出现锐钛矿相,600℃以上退火后的薄膜开始出现金红石相,1000℃以上退火的薄膜完全转变为金红石相.随着退火温度的升高,晶粒尺寸逐渐增大,仅在950～l000℃时出现减小,1 000℃退火的薄膜组成为TiOx.随着退火温度的升高,薄膜的透射率下降,折射率和消光系数有所增加.     

射频磁控溅射法制备PI基CeO2-TiO2复合薄膜

采用射频磁控溅射技术在柔性基体PI(聚酰亚胺)上制备了纳米CeO2-TiO2复合薄膜.借助X射线衍射(XRD)、原子力显微镜(AFM)和紫外-可见光谱仪分别研究了薄膜的物相结构、表面生长形貌和薄膜的紫外-可见光透过率及光学能隙,并用WS-2000型薄膜划痕仪测定薄膜与基体的界面结合强度.实验结果表明:沉积态的薄膜为非晶态,经200℃退火处理4h后,转化为良好的晶态,薄膜中主要含有锐钛矿相结构;溅射功率对薄膜的形貌,光学性能及界面结合力均有影响.尤其当溅射功率为120W时,薄膜的综合性能最优;平均晶粒尺寸110nm,表面粗糙度为160nm,吸光率达80%,光学能隙Eg仅为(2.65±0.05)eV,划痕法测量涂层与基体的附着力为60N.     

Structural and Gas Sensing Properties of Annealed ZnO Thin Film

Annealed ZnO thin film at 400 °C for two hours was deposited on a glass substrate by using pulsed laser deposition (PLD). The structural properties of the annealed ZnO thin film were studied by XRD, TEM and SEM. Gas sensing properties for different gases such as H₂ and LPG were investigated. Applying XRD the size of the nanocrystals is found to be 10.61 nm. SEM of the thin film consisted of many grains distributed uniformly throughout the surface. An annealed ZnO thin film sensor showed the typical n-type semiconducting behavior in the case of H₂ and LGP gases at low and high operating temperature range, respectively. When working at 50 and 140 °C the sensor exhibits very good dynamic response–recovery characteristics to H₂ and LGP, respectively. These results along with a simple fabrication process demonstrate that the annealed ZnO thin film at 400 °C for two hours is promising for developing low cost and high performance H₂ and LPG sensors. The low cost of the sensor element fabrication, high H₂ and LPG sensitivity, fast response and quick recovery make the entire fabrication process a front-runner and cost-effective for the production of annealed ZnO thin film H₂ and LPG sensors.     

溶胶-凝胶法制备Sm2O3光学薄膜

以氯化钐为起始原料,采用溶胶-凝胶法在玻璃和Si(100)基板上制备了Sm2O3光学薄膜,在300～800℃对薄膜进行1～3 h热处理.采用X射线衍射、原子力显微镜和紫外-可见自记式分光光度计等对薄膜的结晶取向、显微结构和光学性能进行了表征.结果表明:Sm2O3薄膜在玻璃基板和Si(100)基板上均表现出沿(311)晶面定向生长的特征;Si基板更有利于生长致密而且结晶良好的薄膜;所制备的薄膜对紫外线有强烈吸收作用,而对可见光有较好的透过作用,随着热处理温度的升高,薄膜结晶性变好,取向性增强,光吸收性能增强,薄膜的禁带宽度减小.     

溶胶-凝胶法制备疏水型SiO2薄膜的研究

采用溶胶-凝胶工艺,以正硅酸乙酯（TEOS）为前驱体,结合三甲基氯硅烷（TMCS）对胶粒的修饰作用,利用浸渍提拉法在玻璃表面制备了具有一定疏水能力的SiO2薄膜.考察了TMCS的掺杂量、醇硅比、加水量及热处理温度对薄膜疏水性的影响.     

Hydrophilic/hydrophobic conversion of Ni-doped TiO2 thin films on glass substrates

Nickel-doped titanium oxide thin films were prepared on soda–lime–silica glass substrates by using a metal naphthenate. Films prefired at 500 °C for 10 min were finally annealed at 600 °C for 30 min in air. Contact angle measurement was used for analyzing hydrophilic/hydrophobic conversion. NiTiO₃, rutile and anatase peaks were obtained for the film after nickel doping. The film containing nickel showed a shift towards the visible in the absorption threshold.     

Effect of isomerization on the stability of the surface aggregation structure of chlorinated polyacrylamide thin films on the basis of interferometric observations

Three isomers of chlorinated polyacrylamides were synthesized by a solution polymerization technique. The prepared polymers were dissolved in acetone to prepare 0.1 and 0.05 wt % solution concentrations. Polymer thin films were then prepared by spin‐casting from acetone solutions onto a glass substrate. The prepared films were characterized by Fourier transform infrared (FTIR) spectroscopy and annealed at 80°C for 6 h. The surface morphology of the prepared films was studied before and after annealing with an interference microscope to determine the effect of isomerization on the stability of the polymer thin films. The thin film of the polymer with a chlorine atom in the para‐position showed better stability due to the ionic interaction with the glass substrate. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 2601–2606, 2002     

Bimetallic non-alloyed NPs for improving the broadband optical absorption of thin amorphous silicon substrates

We propose the use of bimetallic non-alloyed nanoparticles (BNNPs) to improve the broadband optical absorption of thin amorphous silicon substrates. Isolated bimetallic NPs with uniform size distribution on glass and silicon are obtained by depositing a 10-nm Au film and annealing it at 600°C; this is followed by an 8-nm Ag film annealed at 400°C. We experimentally demonstrate that the deposition of gold (Au)-silver (Ag) bimetallic non-alloyed NPs (BNNPs) on a thin amorphous silicon (a-Si) film increases the film''s average absorption and forward scattering over a broad spectrum, thus significantly reducing its total reflection performance. Experimental results show that Au-Ag BNNPs fabricated on a glass substrate exhibit resonant peaks at 437 and 540 nm and a 14-fold increase in average forward scattering over the wavelength range of 300 to 1,100 nm in comparison with bare glass. When deposited on a 100-nm-thin a-Si film, Au-Ag BNNPs increase the average absorption and forward scattering by 19.6% and 95.9% compared to those values for Au NPs on thin a-Si and plain a-Si without MNPs, respectively, over the 300- to 1,100-nm range.     

脉冲准分子激光扫描沉积(PLD)高c轴取向V2O5/Si薄膜及结构分析

采用脉冲准分子激光大面积扫描沉积技术,在Si(111)单晶衬底上沉积了多晶V2O5薄膜,经300℃以上退火处理得到了具有高c-轴取向生长的V2O5膜。300℃以上热退火处理的薄膜表面具有正常的化学计量比（无氧缺位）,晶粒间界明显,晶粒呈针棒状,晶粒尺寸在100－200nm之间。采用X射线衍射（XRD）、Raman光谱（RS）、Fourier红外光谱（FT－IR）及透射电镜扫描附件（STEM）对沉积及不同温度下退火处理的样品进行了结构分析。研究结果表明：V2O5/Si薄膜经400℃热处理后表面部分处于低价态的钒离子已被氧化为V2O5。     

Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO2 thin film

In order to fabricate tetragonal yttria stabilized zirconia samples with large grain size, 3 mol% Y₂O₃ doped zirconia thin films were grown on (0001) α-Al₂O₃ substrate by pulsed laser deposition (PLD) followed by subsequent high temperature annealing. The thin film samples were annealed at 1200°C, 1250°C, 1300°C, and 1350°C in order to obtain larger grain size without Y segregation. The microstructure and chemical composition of these annealed films were analyzed using atomic force microscopy, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy. The as-grown thin film was found to be composed of [111]-oriented grains of ∼100 nm connected with small-angle tilt boundaries. Based on analysis of annealed thin films, it was revealed that grain growth of tetragonal zirconia occurred anisotropically. Cross section scanning transmission electron microscopy observations revealed that such grain growth behavior is affected by the step-terrace structures of the sapphire substrate. Energy-dispersive X-ray spectroscopy showed that Y was found to distribute almost uniformly below 1300°C but to segregate at the grain boundaries at 1350°C. As a conclusion, the 1300°C-annealed sample shows the largest grain size with homogeneous Y distributions.     

不同衬底上ZnO:Al透明导电薄膜的性能

室温下,采用射频磁控溅射法在玻璃和聚对苯二甲酸乙二醇酯（polyethylene terephthalate,PET）上沉积了掺铝的氧化锌（ZnO：Al,AZO）透明导电薄膜。通过X射线衍射仪分析不同衬底上AZO薄膜的结构,采用四探针测试仪及紫外可见光分光光度计测试薄膜的光电性能。结果表明：沉积在两种衬底上的AZO薄膜都具有六方纤锌矿结构,最佳取向均为[002]方向;玻璃衬底和PET衬底上制备的AZO薄膜的方阻分别为19/sq和45/sq,薄膜透光率均高于90%。实验表明,柔性衬底透明导电氧化物薄膜可以代替硬质衬底透明导电薄膜使电子器件向小型化、轻便化方向发展。     

Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

Thin films comprising 0.5 mol% aluminum-doped zinc oxide (AZO) were prepared on glass substrates by a spin-coating method for transparent conducting oxide (TCO) applications. UV laser was selected for the annealing of AZO thin films, due to the well matched energy bandgap between UV laser and AZO films. After the rapid thermal annealing (RTA) process, post UV laser annealing was carried out by varying the scan speed of the laser beam, and the effects of laser annealing on the structural, morphological, electrical, and optical properties were analyzed. The results indicated that UV laser annealing based on various scan speeds affects the microstructure, sheet resistance, and optical transmittance of the AZO thin films, compared with those of the only RTA processed thin films. X-ray diffraction (XRD) analysis showed that all films that preferentially grew normally on the substrate had a (002) peak. The optical transmittance spectra of the laser/RTA annealed AZO thin films exhibited greater than 83% transmittance in the visible region. Also, the sheet resistance (1.61 kΩ/sq) indicated that optimized UV laser annealing after the RTA process improves film conductance.