La0.9Sr0.1MnO3薄膜中电流效应研究

用直流磁控溅射法在(100)LaAlO₃衬底上制备了La_0.9Sr_0.1MnO₃薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La_0.9Sr_0.1MnO₃薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内，薄膜的峰值电阻率随电流增大而减小，在4 mA下获得了30.5%的峰值电阻率变 关键词： 掺杂锰氧化合物 0.9Sr_0.1MnO₃薄膜')" href="#">La_0.9Sr_0.1MnO₃薄膜 电流诱导效应 相分离理论     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO₃(STO)衬底上成功制备出c取向的La_1.85Sr_0.15CuO₄(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温 关键词： 1.85Sr_0.15CuO₄薄膜')" href="#">La_1.85Sr_0.15CuO₄薄膜 超导电性 晶体结构     

钙钛矿结构La0.9Sb0.1MnO3的庞磁电阻性质

一种新的钙钛矿结构的庞磁电阻氧化物La_0.9Sb_0.1MnO₃已用固态反应方法制 成，通过超导量子干涉器件(SQUID)装置测量研究了它的电输运性质和磁性质.x射线光电子 能谱分析证明，该氧化物中Sb的价态是+5价，因此该氧化物是一种新的电子掺杂型庞磁电阻 材料. 关键词： 钙钛矿结构 0.9Sb_0.1MnO₃')" href="#">La_0.9Sb_0.1MnO₃ 电子掺杂 庞磁电阻     

应变对La_(1-x)Sr_xMnO_3薄膜的物理性质的影响(英文)

Both tensile strain and compressive strain effects on the properties of La_(1-x)Sr_xMnO_3 (x=0.1) films were investigated.The films on SrTiO_3 (100) display 'unusual' tensile strain~([1]), which supports a ferromagnetic metallic behavior when film thickness is larger than 10nm.The films on NdGaO_3 (100) presenting compressive strain, on the other hand, demonstrate strongly enhanced insulating behavior.Inordertoobtainunambiguousresults,allfilmsampleswerepreparedusingthesamedepositionconditi…     

氧非正分La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n异质结的整流特性研究

利用脉冲激光沉积技术在掺Nb的SrTiO₃衬底上制备了氧非正分La_0.9Ba_0.1MnO_3-δ/SrTiO₃:Nb p-n异质结.在20—300K这一较宽的温度范围内获得了光滑的整流曲线.整流实验表明：该p-n异质结的正向扩散电压V_D随着温度升高在薄膜金属—绝缘转变温度附近出现极大值,表现出与氧正分La_0.9Ba_{0. 关键词： 0.9}Ba_0.1MnO_3-δ薄膜')" href="#">La_0.9Ba_0.1MnO_3-δ薄膜 锰氧化物p-n结 整流性质     

La0.82Te0.18MnO3薄膜的输运特性和光诱导效应

用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La_0.82Te_0.18MnO₃单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变，转变点温度为283 K.其电阻率在T<T_MI时符合电子-电子、电子-磁振子散射公式；在T>T_MI时为小极化子输运.薄膜在低温段连续激光(波长为532 nm，40 mW)作用下电阻率显著增大，电阻变化率在253 K达到最大值51.1%,该变化率远大于相同条件下的空穴掺杂材料；在高温段产生了较小的光电导，电阻变化率小于10%.这些现象主要与激光激励下自旋系统和小极化子的变化有关.La_0.82Te_0.18MnO₃薄膜在激光诱导下具有明显的与自旋相关的弛豫现象.激光开始作用时薄膜电阻率随时间的变化符合指数关系. 关键词： 0.82Te_0.18MnO₃薄膜')" href="#">La_0.82Te_0.18MnO₃薄膜 光诱导 输运特性 电子掺杂     

外延生长La0.7Sr0.3MnO3薄膜厚度对缺陷影响的慢正电子分析

采用脉冲激光沉积方法在(LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7衬底上外延生长了La_0.7Sr_0.3MnO₃薄膜,并采用慢正电子束方法分析了薄膜在不同厚度和不同退火气氛下参数S的变化. 分析表明,薄膜中包含两种机制引入的氧空位,分别是薄膜生长气氛中氧压偏低造成薄膜的氧缺乏和由于薄膜应变引入空位型缺陷. 当薄膜厚度较薄时,应变造成的晶格畸变化比较大,当薄膜的厚度大于11 nm时,薄膜的应变驰豫已经比较完全. 原位退火的样品中正电子主要是被氧缺乏引起的氧空位捕获. 在氧气中退火的样品,S随厚度的变化反映了应变对薄膜微结构的影响.     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

Y替代La2/3Ca1/3MnO3体系的结构与输运行为

系统研究了(La1-xYx)2/3Ca1/3MnO3(0.0≤x≤0.3)体系的结构和输运行为.结果表明，实验样品具有很好的单相结构，随Y掺杂浓度的增加，金属—绝缘体（M—I）转变温度T-MI向低温区移动，对应的峰值电阻率ρp升高，对x=0.3样品，较未替代样品（x=0.0）增幅达8个数量级.在外加磁场下，材料表现出很强的磁电阻效应.同时，从实验结果出发，直接给出了输运特性与晶体结构之间的关联，并从双交换模型和可变程跃迁理论出发，对实验结果进行了初步讨论. 关键词： La2/3Ca1/3MnO3锰氧化物 Y替代 晶体结构 输运行为     

Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

We report here studies on the influence of oxygen pressure on the electroresistance behavior of La_0.9Sr_0.1MnO₃ thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication. Supported by the National Natural Science Foundation of China (Grant No. 10334070) and the National Key Basic Research Program of China (Grant No. 2004CB619004)     

Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films

La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.     

High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are wort...     

电脉冲对多晶La0.7Ca0.3MnO3比热的影响

对电脉冲诱导的不同电阻态下La_0.7Ca_0.3MnO₃样品的比热进行了研究.实验结果表明,电脉冲导致La_0.7Ca_0.3MnO₃样品比热随电阻状态发生可逆变化.比热随电阻状态的减小而减小.低温比热拟合及不同电阻状态下的比热差与温度关系说明,声子对比热的贡献不随电阻状态变化,磁性和载流子对比热的贡献是导致La_0.7Ca_0.3MnO₃样品比热变化的原因.电脉冲诱导O离子沿一维扩展性缺陷的电化学迁移,导致材料中局部区域的O离子浓度发生变化.O离子浓度的变化导致载流子浓度的变化,同时载流子浓度的变化将使得低温下磁性耦合强度发生变化,从而导致比热发生变化. 关键词： 0.7Ca_0.3MnO₃')" href="#">La_0.7Ca_0.3MnO₃ 比热 氧离子迁移     

La0.1Bi0.9-xEuxFeO3化合物的结构与性能研究

利用固相反应烧结技术制备La_0.1Bi_0.9-xEu_xFeO₃系列化合物. 利用X射线粉末衍射进行物相鉴定和结构分析,确定了材料的相关系：x≤0.05,材料为R3c结构相;0.08≤x≤0.12,材料为赝R3c结构相;x≥0.15是Pbnm相,其中0.15≤x≤0.20区域Pbnm相存在畸变. 磁测量结果表明,材料具有弱铁磁性,对于x≤0.20材料,磁矩在x=0.12成分存在极值. 利用阻抗分析仪测量了室温介电常数随成分的变化关系.讨论了材料的结构与弱铁磁性和室温介电常数间的关系. 关键词： 0.1Bi_0.9-xEu_xFeO₃')" href="#">La_0.1Bi_0.9-xEu_xFeO₃ X射线衍射 磁性 介电常数     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.     

Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction

Perovskite manganite La_0.9Ba_0.1MnO₃(LBMO) films were deposited on (0 0 1)-oriented single crystal yttria-stabilized zirconia (YSZ) substrate by 90° off-axis radio frequency magnetron sputtering. The film thickness ranged from 10 nm to 100 nm. Grazing incidence X-ray diffraction technique and high resolution X-ray diffraction were applied to characterize the structure of LBMO films. The LBMO film mainly consisted of (0 0 1)-orientated grain as well as weakly textured (1 1 0)-orientated grain. The results indicated that an amorphous layer with thickness of about 4 nm was formed at the LBMO/YSZ interface. The strain in LBMO film was small and averaged to be about -0.14%. The strain in the film was not lattice mismatch-induced strain but residual strain due to the difference in thermal expansion coefficient between film and substrate.     

Structural properties of Bi1-xLaxFeO3 studied by micro-Raman scattering

This paper reports that La-doped BiFeO 3(Bi1-x La x FeO3,x = 0,0.1,0.2,0.3,0.6,0.8 and 1.0) were studied by using micro-Raman spectroscopy and x-ray diffraction(XRD).The XRD patterns indicate that the structure of Bi1-xLaxFeO 3 changes from rhombohedral BiFeO3 to orthorhombic LaFeO3.The results of Raman spectroscopy show good agreement with the XRD results.Strikingly,the phonon peak at around 610 cm-1 and the two-phonon peaks in the high frequency range exist in all compounds and enhance with increasing La substitution.The increasing intensity of the 610 cm-1 peak is attributed to the changes in the FeO 6 octahedron during the rhombohedral-orthorhombic phase transition.The enhancements of the two-phonon peaks are associated with the breakdown of the cycloid spin configuration with the appearance of the orthorhombic structure.These results indicate the existence of strong spin-phonon coupling in Bi1-xLax FeO3,which may provide useful information for understanding the effects of La content on the structural and magnetic properties of Bi1-xLaxFeO3.     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES