基于功率合成技术的166GHz大功率源研制

冰云探测对于提高天气预报准确性、监测极端天气现象等具有重要的意义.考虑到冰云粒子尺寸、形状分布等因素,利用太赫兹频段被动遥感仪器能更好地解决冰云探测的难题. 664 GHz作为一个重要的探测频点,其接收机射频前端主要包括664 GHz二次谐波混频器、332 GHz二倍频器以及166 GHz大功率源.作者在太赫兹二倍频设计的基础上,利用两路功率合成技术实现166 GHz大功率源,目的是提供给后级的332 GHz二倍频器足够的输入功率,从而能够驱动谐波混频器工作.实验结果表明,上述大功率源在164~172 GHz频率范围内输出功率大于46m W;在168 GHz处有最大输出功率59 m W.以上研究有效解决了本振链路中G波段输出功率不足的问题,为研制更高频段的太赫兹系统提供了技术支撑.     

基于GaAs肖特基二极管的330GHz接收前端技术研究

基于GaAs肖特基二极管,设计实现了310~330 GHz的接收机前端.接收机采用330 GHz分谐波混频器作为第一级电路,为降低混频器变频损耗,提高接收机灵敏度,分析讨论了反向并联混频二极管空气桥寄生电感和互感,采用去嵌入阻抗计算方法,提取了二极管的射频、本振和中频端口阻抗,实现了混频器的优化设计,提高了变频损耗仿真精度.接收机的165 GHz本振源由×6×2倍频链实现,其中六倍频采用商用有源器件,二倍频则采用GaAs肖特基二极管实现,其被反向串联安装于悬置线上,实现了偶次平衡式倍频,所设计的倍频链在165 GHz处输出约10 dBm的功率,用以驱动330 GHz接收前端混频器.接收机第二级电路采用中频低噪声放大器,以降低系统总的噪声系数.在310~330 GHz范围内,测得接收机噪声系数小于10.5 dB,在325 GHz处测得最小噪声系数为8.5 dB,系统增益为(31±1)dB.     

150 GHz大功率二倍频器

基于六阳极结反向串联型砷化镓平面肖特基容性二极管,采用平衡式二倍频器结构,成功研制出一种大功率150 GHz二倍频器。使用三维电磁场与非线性谐波平衡联合仿真方法,提高了仿真结果和实际的吻合度,并根据设计结果完成倍频器的加工、装配和测试。倍频器在输出频率为146~158 GHz下的倍频效率达到7%以上;在输出频率为154 GHz时,倍频效率达到12%,输出功率达到71 mW。     

High Efficiency and Wideband 300 GHz Frequency Doubler Based on Six Schottky Diodes

A high efficiency and wideband 300 GHz frequency doubler based on six Schottky diodes is presented in this paper. This balanced doubler features a compact and robust circuit on a 5-μm-thick, 0.36-mm-wide, and 1-mm-long GaAs membrane, fabricated by LERMA-C2N Schottky process. The conversion efficiency is mainly better than 16% across the wide bandwidth of 266–336 GHz (3 dB fractional bandwidth of 24%) when pumping with 20–60 mW input power (P _in) at the room temperature. A peak output power of 14.75 mW at 332 GHz with a 61.18 mW P _in, an excellent peak efficiency of 30.5% at 314 GHz with 43.86 mW P _in and several frequency points with outstanding efficiency of higher than 25% are delivered. This doubler served as the second stage of the 600 GHz frequency multiplier chain is designed, fabricated, and measured. The performance of this 300 GHz doubler is highlighted comparing to the state-of-art terahertz frequency doublers.     

A High Power 320-356GHz Frequency Multipliers with Schottky Diodes

A 320-356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate.Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying effficiency.The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals,and better thermal transportation.The whole multiplying circuit is optimized and established in Computer simulation technology (CST) suite.The highest measured multiplying efficiency is 8.0％ and its output power is 5.4mW at 328GHz.The measured typical output power is 4.0mW in 320-356GHz.     

Hybrid Integrated Triplers Frequency Doublers and to 300 and 450 GHz

High-power wide-band submillimeter-wave frequency sources have been developed. A frequency doubler to 300 GHz has delivered an output power of 5 mW with 3-dB-down bandwidth of more than 10 GHz. A frequency tripler to 450 GHz with an output power of 0.5 mW has also been tested. These multiplier output powers are highest values in the respective frequency regions up to date. The successful performances have been achieved by use of GaAs Schottky-barrier diodes and hybrid integrated circuits which are specially designed to obtain high output power.     

多阳极220GHz倍频器单片设计

介绍了一款基于GaAs肖特基二极管单片工艺的220 GHz倍频器的设计过程以及测试结果。为提高输出功率,倍频器采用多阳极结构,8个二极管在波导呈镜像对称排列,形成平衡式倍频器结构。采用差异式结电容设计解决了多阳极结构端口散射参数不一致问题,提高了倍频器的转换效率和工作带宽。对设计的倍频器进行流片、装配和测试,测试结果显示：倍频器在204～234 GHz频率范围内,转化效率大于15%;226 GHz峰值频率下实现最大输出功率为90.5 mW,转换效率为22.6%。设计的220 GHz倍频器输出功率高,转化效率高,工作带宽大。     

340 GHz GaN大功率固态倍频链

随着太赫兹技术的应用和发展,对大功率太赫兹固态源的需求愈加迫切。文中基于GaN肖特基二极管(SBD)工艺设计并制造了具有高功率输出的170 GHz和340 GHz太赫兹倍频器,实现了340 GHz大功率太赫兹固态倍频链。采用多管芯GaN SBD提高器件功率承载能力,综合开展电路优化设计提升倍频性能,通过仿真研究和实验测试,验证了倍频器设计的有效性和先进性。170 GHz倍频器的实测峰值输出功率达到580 mW,倍频效率为14.5%。340 GHz倍频器的实测峰值输出功率为66 mW,倍频效率为12.5%。该太赫兹固态倍频链性能优良,在太赫兹系统中具有重要的应用价值。     

664GHz 接收前端技术研究

基于X 波段源,通过9×2×2 次倍频链实现了输出约1-2mW 的320-356GHz 全固态倍频源。该信号源作为本振信 号驱动664GHz 接收前端的二次谐波混频器,该混频器采用了有源偏置技术以降低混频器的本振驱动功率和接收机的噪 声温度。仿真结果表明,混频二极管在0.3mW 本振驱动功率及0.35V 直流偏置下,在650-680GHz 带宽内,仿真得到的 单边带变频损耗小于12dB,666GHz 最小损耗为10.8dB。     

A frequency doubler for 200 GHz with a planar Schottky varactor

A frequency doubler for 200 GHz utilising a planar surface channel Schottky varactor was designed, constructed and tested. The doubler employes novel split-waveguide mount design with two sliding backshorts at both input and output waveguides. The theoretical maximum efficiency of the doubler is 44.0 % with input power level of 32 mW and the maximum output power is 16.5 mW with input power level of 50 mW. The measured maximum efficiency of the doubler was 7.1 % and the maximum output power was 2.6 mW     

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.     

A broadband 800 GHz Schottky balanced doubler

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 μm thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved ≈10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature     

1-18GHz GaAs单片集成电调衰减器

本文叙述了单片宽带GaAs MESFET电调衰减器的设计和制作.单片微波集成衰减器由3个MESFET按T型连接构成,整个芯片的尺寸为1.02×0.72mm.在1～18GHz范围内,插入损耗为2.0～2.7dB,各衰减状态下的输入和输出电压驻波比≤2.0,最大衰减量达20dB.在9GHz下的1dB插入压缩点功率为300mW.     

High-Output, Single- and Dual-Diode, Millimeter-Wave Frequency Doublers

A balanced, dual-diode varactor frequency doubler for 85-116 GHz is described and its performance compared to that of a single-diode device. The balanced doubler can provide a minimum of 18 mW between 85 and 116 GHz for 190-mW maximum safe input power, while the single-diode doubler using the same diode-type exhibits a minimum output power of 10 mW over the same frequency range for a maximum safe input power of 90 mW. An improved single-diode design using a higher break-down voltage diode has achieved a minimum output power of 18 mW between 97 and 116 GHz for a maximum safe input power of 150 mW. These devices have been used in cascade with a frequency tripler to implement a 6X multiplier chain to 310-350 GHz with a minimum output power in this submillimeter band of 0.6 mW.     

毫米波倍频上变频功放组件

该组件是将输入信号 (1 5 GHz,1 0 d Bm)倍频至 3 0 GHz,与本振信号 (5 GHz,1 0 d Bm)上变频到 3 5 GHz,然后进行功率放大输出。其倍频部分采用 Ga As PHEMT有源倍频并进行放大 ,混频电路采用 Ga As二极管的双平衡混频 ,滤波放大后由 8mm波导输出。最终结果为输出频率为 3 5 GHz,输出功率为 1 7d Bm,谐波抑制度大于 40 d BC,偏离中心频率± 2 0 0 MHz带宽内 ,幅度不平坦度小于 1 .5 d B。整个组件尺寸仅为 60 mm×2 2 mm× 1 5 mm。     

0.2 THz二倍频器研究

基于六阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz大功率二倍频器。肖特基二极管倒装焊接在50m石英电路上。采用电磁场和电路联合设计仿真获得了二倍频器的倍频效率。当入射功率在100 mW时,输出频率在190~225 GHz带内效率大于5%。在小功率（Pin100 mW）和大功率（Pin300 mW）注入条件下,测试了倍频电路的输出功率和倍频效率。在100 mW驱动功率下采用自偏压测试,最大输出功率为14.5 mW@193 GHz,对应倍频效率为14%;在300 mW驱动功率下采用自偏压测试,在188~195 GHz,输出功率大于10 mW,最大输出功率为35 mW@192.8 GHz,对应倍频效率为11%。     

An all-solid-state broad-band frequency multiplier chain at 1500 GHz

We report the results of a high-performance all-solid-state broad-band frequency multiplier chain at 1500 GHz, which uses four cascaded planar Schottky-barrier varactor doublers. The multipliers are driven by monolithic-microwave integrated-circuit-based high electron-mobility transistor power amplifiers around 95 GHz with 100-150 mW of pump power. The design incorporates balanced doublers utilizing novel substrateless and membrane device fabrication technologies, achieving low-loss broad-band multipliers working in the terahertz range. For a drive power of approximately 100 mW in the 88-99-GHz range, the doublers achieved room-temperature peak efficiencies of approximately 30% at the 190-GHz stage, 20% at 375 GHz, 9% at 750 GHz, and 4% at the 1500-GHz stage. When the chain was cooled to 120 K, approximately 40 /spl mu/W of peak output power was measured for 100 mW of input pump power.     

W-band monolithic frequency doubler using vertical GaAs varactor diode with n/sup +/ buried layer

A W-band monolithic frequency doubler was designed and fabricated using a vertical GaAs varactor diode that has an n/sup +/ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversation efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.<>     

0.2THz宽带非平衡式倍频电路研究

基于四阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz宽带非平衡式二次倍频电路。肖特基二极管倒装焊接在75 m石英电路上。在小功率和大功率注入条件下,测试了倍频电路的输出功率和倍频效率。输入功率在10~15 mW时,通过加载正向偏置电压,在210~224 GHz,倍频效率大于3%,在212 GHz处有最高点倍频效率为7.8%。输入功率在48~88 mW时,在自偏压条件下,210~224 GHz带内倍频效率大于3.6%,在214 GHz处测得最大倍频效率为5.7%。固定输出频率为212 GHz,在132 mW功率注入时,自偏压输出功率最大为5.7 mW,加载反向偏置电压为-0.8 V时,输出功率为7.5 mW。     

高功率110 GHz平衡式肖特基二极管频率倍频器

高频段的太赫兹信号通常是由多个倍频器级联输出的,因此要求倍频链路的前级必须具备高输出功率的能力。为了提升太赫兹倍频器的功率容量和效率,结合高频特性下肖特基二极管有源区电气模型建模方法,采用高热导率的陶瓷基片,利用对称边界条件,在HFSS和ADS中实现对倍频器电路的分析和优化,研制出了高功率110 GHz平衡式倍频器。最终测试结果表明,驱动功率为28 dBm左右时,该倍频器在102~114.2 GHz的工作带宽内的最高输出功率和效率分别为108 mW和17.6%,为链路后续的二倍频和三倍频提供足够的驱动功率。