Modulation of ultrafast laser-induced magnetization precession in BiFeO_3-coated La_(0.67)Sr_(0.33)MnO_3 thin films

The ultrafast laser-excited magnetization dynamics of ferromagnetic(FM) La_(0.67)Sr_(0.33)MnO_3(LSMO) thin films with BiFeO_3(BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique.Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect.The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films,which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.     

Effect of an interface boundary on the magnetooptical and magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>/La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> heterostructures

The optical, magnetooptical (Kerr effect and magnetotransmission), and magnetotransport properties of La_2/3Ca_1/3MnO₃/La_2/3Sr_1/3MnO₃ and La_2/3Ca_1/3MnO₃/SrTiO₃/La_2/3Sr_1/3MnO₃ heterostructures on SrTiO₃ substrates are studied. The contribution of the interface boundary to the magnetotransmission is typical of a material with a transitional composition. It is found that a 2-nm-thick SrTiO₃ spacer does not influence the shape and position of the magnetotransmission peak in a field normal to the surface of the heterostructure but increases the contribution of the upper layer to the magnetotransmission in the Voigt geometry and also enhances the magnetoresistance that is due to the tunneling of spin-polarized carriers through the spacer. The Kerr spectra taken of the heterostructures are typical of single-layer single-crystal films.     

Magnetotransport properties of nano-constriction array in La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> film

Nano-constriction array in La_0.67Sr_0.33MnO₃ film was fabricated by using ion beam etching masked by a monolayer of packed and ordered array of SiO₂ microspheres. Nano-constrictions of around 50 nm in width were fabricated. The low field magnetoresistance (LFMR) exhibited in the samples were observed to be current dependent and the I-V characteristics of the film were found to be nonlinear. These observations were attributed to the co-existence of the ferromagnetic regions and the nano-constricted region of weakened ferromagnetic coupling where Mn³⁺-O-Mn⁴⁺ bond were distorted due to the ion beam bombardment. The spin polarized bias current would strengthen local ferromagnetic coupling when passing through this nano-constricted regions. This current effect is relatively large comparing to the external magnetic field to the drop of resistance.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Kinetics of magnetization reversal in a thin La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> manganite film

The kinetics of magnetization reversal of a thin LSMO film has been studied for the first time. It is shown that the magnetic domain structure critically depends on the conditions of structure formation. In the demagnetized state (after zero-field cooling from T _c ), a maze-like domain microstructure with perpendicular magnetization is formed in the film. However, after field cooling and/or saturating magnetization by a field of arbitrary orientation, the [110] direction of spontaneous magnetization in the film plane is stabilized; this pattern corresponds to macrodomains with in-plane magnetization. Further film magnetization reversal (both quasi-static and pulsed) from this state is implemented via nucleation and motion of 180° “head-to-head” domain walls. Upon pulse magnetization reversal, the walls “jump” at a distance proportional to the applied field strength and then undergo thermally activated drift. All dynamic characterisitcs critically depend on the temperature when the latter varies around the room temperature.     

Iron-induced magnetic,transport and magnetoresistance behavior in Nd<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films

The effects of Fe doping on Mn site in the colossal magnetoresistive film, Nd_0.67Sr_0.33MnO₃ have been studied by preparing the series Nd_0.67Sr_0.33Mn_1-xFe_xO₃ (x=0,0.05 and 0.1). Upon doping, no structural changes have been found. However, the Curie temperature, the associated metal-to-insulator transition temperature and the magnetization decrease drastically with Fe doping. The resistivity in the paramagnetic regime for all the samples follows Emin–Holsteins theory of small polaron. The polaron activation energy, W_p and resistivity coefficient, A increase with Fe doping. This effect may be ascribed to the fact that upon Fe doping, the long-range ferromagnetic order is destroyed and, therefore, W_p is enhanced in the system. As compared to the La-based system, Fe doping has a stronger tendency to destabilize the long-range ferromagnetic order in the Nd-based system. Large MR (as high as 90%) observed in the epitaxial NSMFO film may be attributed to the good lattice-matching between the grown film and substrate. PACS 75.47.Gk; 75.47.Lx; 75.70.-i     

Coercive field enhancement in microstructured (La<Subscript>0.4</Subscript>Pr<Subscript>0.6</Subscript>)<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> thin films

The perovskite material (La_0.4Pr_0.6)_0.67Ca_0.33MnO₃ (LPCMO) has complex electronic and magnetic behavior based on phase competition between ferromagnetic metallic (FMM) and insulating phases with similar free energies. Experimental evidence has indicated that in-plane stress anisotropy influences these phases and can affect electronic and magnetic properties. Here we investigate the roles that both stress and shape anisotropies may play in controlling the coercive field of the material. LPCMO thin films of various thicknesses (20, 25, and 30 nm) were deposited on (110) NdGaO₃ (NGO) substrates using pulsed laser deposition and the coercive fields were measured. Photolithography was then used to fabricate microstructured arrays of LPCMO on the NGO substrates for each of the films. The coercive fields of these arrays of LPCMO were compared to the behavior of the corresponding unpatterned LPCMO thin films across a range of temperatures. Microstructure arrays for the thicker (25 and 30 nm) films showed a substantial increase in the coercive field after forming the arrays, whereas a thinner film (20 nm) showed almost no change in the coercive field. Stress anisotropy continues to play a dominant role in the behavior of LPCMO thin films and dimensionality of the magnetic domains also influences the results. The films show 2D behavior when film thickness approaches the size of the critical radius for single-to-multidomain transitions. Making thicker films allows for 3D behavior and a role for shape anisotropy to influence the coercive fields.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Structure and magnetoresistance of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> films grown coherently on (001)NdGaO<Subscript>3</Subscript>

40-to 120-nm-thick (001)La_0.67Ca_0.33MnO₃ films grown through laser evaporation on (001)NdGaO₃ were studied. The lattice parameters of the La_0.67Ca_0.33MnO₃ films measured in the substrate plane (a_∥=3.851 Å) and along the normal to its surface (a_⊥=3.850 Å) practically coincided with that of the pseudocubic neodymium gallate. The unit-cell volume of the La_0.67Ca_0.33MnO₃ film was slightly smaller than that of stoichiometric bulk samples. The position of the maximum in the temperature dependence of electrical resistivity did not depend on the thickness of the La_0.67Ca_0.33MnO₃ film. The negative magnetoresistance (MR≈?0.25, H=0.4 T) of La_0.67Ca_0.33MnO₃ films reached a maximum at 239–244 K.     

Response of the electrical resistivity and magnetoresistance of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> films to biaxial tensile strains

The structure, electrical resistivity, and magnetoresistance of (50-nm)La_0.67Ca_0.33MnO₃ epitaxial films grown on a [(80 nm)Ba_0.25Sr_0.75TiO₃/La_0.3Sr_0.7Al_0.65Ta_0.35O₃] substrate with a substantial positive lattice misfit have been studied. The tensile biaxial strains are shown to account for the increase in the cell volume and in the relative concentration of Mn⁺³ ions in the manganite films as compared to those for the original material (33%). The peak in the temperature dependence of the resistivity ρ of La_0.67Ca_0.33MnO₃ films was shifted by 30–35 K toward lower temperatures relative to its position in the ρ(T) graph for a manganite film grown on (001)La_0.3Sr_0.7Al_0.65Ta_0.35O₃. For T < 150 K, the temperature dependences of ρ of La_0.67Ca_0.33MnO₃/Ba_0.25Sr_0.75TiO₃/La_0.3Sr_0.7Al_0.65Ta_0.35O₃ films could be well fitted by the relation ρ = ρ₀ + ρ₁T^4.5, where ρ₀ = 0.35 mΩ cm and the coefficient ρ₁ decreases linearly with increasing magnetic field. In the temperature interval 4.2–300 K, the magnetoresistance of manganite films was within the interval 15–95% (μ₀H = 5 T).     

Electrical resistivity and magnetotransport properties of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films biaxially compressed by the substrate

The structure, electrical resistivity, and magnetoresistance of La_0.67Ba_0.33MnO₃(20 nm) films grown coherently on an La_0.3Sr_0.7Al_0.65Ta_0.35O₃(001) substrate with a lattice misfit of about 1% were studied. The rigid connection of the manganite layer with the bulk substrate brought about the unit cell distortion of the substrate (a _⊥/a _‖ = 1.02) and a decrease in the unit cell volume as compared to that of the corresponding bulk crystals (a _‖ and a _⊥ are the unit cell parameters measured in the substrate plane and along the surface normal, respectively). The temperature T _M ≈ 295 K, at which the electrical resistivity ρ of the (20 nm)La_0.67Ba_0.33MnO₃ films reached a maximum, was 40–45 K lower than that for the corresponding bulk crystals. The negative magnetoresistance (MR ≈ ?0.25 for μ₀ H = 1 T) attained a peak value at T _MR ≈ 270 K. The response of ρ to a magnetic field depended substantially on the angle between the current flow in the film and the direction of the magnetic field.     

Magnetotransport characteristics of strained La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> epitaxial manganite films

The electrical and magnetic characteristics of La_0.7Sr_0.3MnO₃ (LSMO) epitaxial manganite films are investigated by different methods under conditions when the crystal structure is strongly strained as a result of mismatch between the lattice parameters of the LSMO crystal and the substrate. Substrates with lattice parameters larger and smaller than the nominal lattice parameter of the LSMO crystal are used in experiments. It is shown that the behavior of the temperature dependence of the electrical resistance for the films in the low-temperature range does not depend on the strain of the film and agrees well with the results obtained from the calculations with allowance made for the interaction of electrons with magnetic excitations in the framework of the double-exchange model for systems with strongly correlated electronic states. Investigations of the magneto- optical Kerr effect have revealed that an insignificant (0.3%) orthorhombic distortion of the cubic lattice in the plane of the NdGaO₃(110) substrate leads to uniaxial anisotropy of the magnetization of the film, with the easy-magnetization axis lying in the substrate plane. However, LSMO films on substrates (((LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7)(001)) ensuring minimum strain of the films exhibit a biaxial anisotropy typical of cubic crystals. The study of the ferromagnetic resonance lines at a frequency of 9.76 GHz confirms the results of magnetooptical investigations and indicates that the ferromagnetic phase in the LSMO films is weakly inhomogeneous.     

The size effect on transport properties of colossal magnetoresistance materials La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

High quality La_0.67Ca_0.33MnO₃ (LCMO) film was deposited via a novel pulsed electron deposition technique on SrTiO₃(100) single crystal substrate. The micro-bridge with different widths was fabricated by using electron beam lithography (EBL) technique and their transport properties were studied. For the micro-bridges with width of 2 and 1.5 μm, the insulator-to-metal transition temperature (T _P) keeps unchanged compared with the film. For the micro-bridges with width of 1 μm, the T _P shifts towards the lower temperature by 50 K. When the width decreases down to 500 nm, the insulator-to-metal transition disappears. The magnetoresistance behavior of these micro-bridges was studied, and the results show that the low field magnetoresistance (LFMR) decreases and the high field magnetoresistances (HFMR) keep almost unchanged as the width of micro-bridge is reduced. Supported by the Key Project of the Natural Science Foundation of Zhejiang Province of China (Grant No. Z605131), the National Natural Science Foundation of China (Grant No. 60571029), and W. H. Tang was supported by the Creative Research Group of National Natural Science Foundation of China (Grant No. 60321001)     

Raman measurements on thin films of the La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> manganite: a probe of substrate-induced effects

We report on a Raman study of the phonon spectrum of La _0.7Sr_0.3MnO₃ thin films epitaxially grown on LaAlO₃. The spectrum, as a function of film thickness d, does not change over the 1000–100 ? range, whereas a strong hardening of the phonon frequencies of both bending and stretching modes is apparent in ultra-thin films (d<100 ?) where substrate-induced effects are remarkable. This behaviour, which appears to be related with the measured d-dependence of the insulator-to-metal transition temperature, is ascribed to co-operative effects of MnO₆ octahedra rotation and charge-localization. Raman spectroscopy proves to be a simple and powerful tool to monitor subtle structural modifications hardly detectable with conventional diffraction techniques in ultra-thin films.     

Electrical resistivity and magnetotransport in La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> films asymmetrically biaxially compressed by an NdGaO<Subscript>3</Subscript>(001) substrate

The La_0.67Ba_0.33MnO₃(40 nm) films are quasi-coherently grown on an NdGaO₃(001) substrate with an orthorhombic unit cell distortion of ～1.4%. The biaxial compressive stresses generated during nucleation and growth lead to a decrease in the unit cell volume of the grown layers. This, in turn, results in a decrease (by ～35 K) in the temperature of the maximum in the dependence of the electrical resistivity ρ of the layers on the temperature. For T < 150 K, the electrical resistivity ρ of the films increases in proportion to ρ₂ T ^4.5 and the coefficient ρ₂ decreases almost linearly with increasing magnetic field H. The negative magnetoresistance (≈?0.17 for μ₀ H = 1 T) reaches a maximum at temperatures close to room temperature. The response of the electrical resistivity ρ of the La_0.67Ba_0.33MnO₃(40 nm) films to the magnetic field depends on the crystallographic direction of the film orientation and the angle between H and I (where I is the electric current through the film).     

Study of mechanochemically prepared nanocrystalline La<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>MnO<Subscript>3</Subscript>

The nanocrystalline La_0.8Sr_0.2MnO₃ (LSM) is prepared by varying the revolutions per minute and milling time of planetary monomill during the mechanochemical method. The LSM forms in a relatively shorter milling time with an increase in the milling speed from 250 to 600 rpm. The structural phase transition from orthorhombic to rhombohedral phase in the LSM prepared by ball milling at the speed 250 rpm for 36 h is seen due to sintering it at 700 °C for 4 h. The crystallite size reduces with the increase in both the milling speed and the milling time individually or combined. The microhardness (HV) and sintered density increase with the reduction in the crystallite size. The temperature-activated transition temperature is suppressed by reducing the grain size in the nanometer range. The electrical dc conductivity increases with the reduction in the grain/crystallite size.     

Electrical and resonance properties of magnetically inhomogeneous La<Subscript>0.775</Subscript>Sr<Subscript>0.225</Subscript>MnO<Subscript>3−δ</Subscript> films

Electrical properties and magnetic-resonance spectra are studied in La_0.775Sr_0.225MnO_3?δ thin films obtained on SrTiO₃ single-crystal substrates through magnetron sputtering. Below 250 K, the essential influence of the intensity of an electric current flowing through a film on the electrical resistance of the sample is observed. It is experimentally shown that as the current density is increased in the low-temperature range, the semiconducting conduction transforms into metallic conduction. Arguments are advanced in favor of the hypothesis that the strong sensitivity of the film properties to external factors is caused by the coexistence of ferromagnetic metallic and charge-or orbital-ordered phases in a sample.     

Improvement of refrigerant capacity of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> single crystal with a few percent Fe doping

Large low-field-induced magnetic entropy changes, ΔS _M, are observed in La_0.67Ca_0.33MnO₃ and La_0.67Ca_0.33Mn_0.96Fe_0.04O₃ single crystals. The peaks of ΔS _M broadened asymmetrically to high temperatures under higher magnetic fields for two materials should be attributed to the first-order magnetic phase transition at T _c. A small amount of iron doping results in an increase in the refrigerant capacity of the material though the magnetic entropy change decreases. The discovery of excellent magnetocaloric features of these single crystals in the low magnetic field can provide some ideas for exploring novel magnetic refrigerants operating under permanent magnet rather than superconducting one as magnetic field source. Supported by the State Key Project of Fundamental Research (Grant No. 2005CB724402), and the National Natural Science Foundation of China (Grant No. 50672126) Contributed by CHENG ZhaoHua     

Insulator-metal transition shift related to magnetic polarons in La<Subscript>0.67-x</Subscript>Y<Subscript>x</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

The magnetic transport properties have been measured for La_0.67-xY_xCa_0.33MnO₃ ( 0 ⩽ x ⩽ 0.14) system. It was found that the transition temperature T _p almost linearly moves to higher temperature as H increases. Electron spin resonance confirms that above T _p , there exist ferromagnetic clusters. From the magnetic polaron point of view, the shift of T _p vs. H was understood, and it was estimated that the size of the magnetic polaron is of 9.7 ∼ 15.4 ? which is consistent with the magnetic correlation length revealed by the small-angle neutron-scattering technique. The transport properties at temperatures higher than T _p conform to the variable-range hopping mechanism. Received 27 August 2002 / Received in final form 2 December 2002 Published online 14 March 2003     

Metal-insulator transition in a radiation-disordered La<Subscript>0.85</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> manganite

The temperature dependences of the electrical resistivity ρ(T) and the ac magnetic susceptibility χ(T, H = 0) are thoroughly investigated for a perovskite-like lanthanum manganite, namely, La_0.85Sr_0.15MnO₃, which is preliminarily exposed to neutron irradiation with a fluence _F = 2 × 10¹⁹ cm^?2 and then annealed at different temperatures ranging from 200 to 1000°C. The results of the electrical resistance measurements demonstrate that neutron irradiation of the samples leads to the disappearance of the low-temperature insulating phase. As the annealing temperature increases, the insulating phase is not restored and the manganite undergoes a transformation into a metallic phase. Analysis of the magnetic properties shows that, under irradiation, the ferromagnet-paramagnet phase transition temperature T_C decreases and the magnetic susceptibility is reduced significantly. With an increase in the annealing temperature, the phase transition temperature T_C and magnetic susceptibility χ(_{T, H} = 0) increase and gradually approach values close to those for an unirradiated sample. This striking difference in the behavior of the electrical and magnetic properties of the radiation-disordered La_0.85Sr_0.15MnO₃ manganite is explained qualitatively.