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Spindt型真空微三极管按比例缩小的CE规则 总被引:5,自引:1,他引:4
本文根据恒定电场原理,提出了Spindt型真空微三极管按比例缩小规则。研究指出,Spindt型真空微三极管按比例缩小后,性能明显改进,工作电压降低。 相似文献
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对于场发射三极管,提高使用频率,增加跨导以提高增益是设计的关键。因此,本文在研究场发射三极管工作原理的基础上,重点分析了场发射三极管结构参数与电参数的关系,设计出了两种结构、四种尺寸的自对准栅场发射三极管单元结构参数,并对它们的性能进行了讨论。 相似文献
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对于场发射三极管,提高使用频率,增加跨导以提高增益是设计的关键。因此,本文在研究场发射三级管工作原理的基础上,重点分析了场发射三极管结构参数与电参数的关系。 相似文献
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真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。 相似文献
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本文采用SiO2作锥尖的塑模,再利用塑模制备出场发射金属尖阴极阵列,并给出SEM金属尖照片,分析了工艺因素对金属尖的影响,同时提出了真空微电子二极管和三极管的设想。 相似文献
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平面纳米真空三极管只需要平面工艺,与现有的微电子工艺兼容,与基于经典Spindt阴极的真空微电子三极管相比,具有工艺相对简单等特点,同样具备纳米真空电子器件抗辐射、温度稳定性好等优点。本文采用粒子模拟方法对平面型纳米真空三极管的场发射特性进行了计算机模拟研究,模拟中考虑了空间电荷的影响。典型器件的模拟结果表明,平面型纳米真空三极管具有信号响应速度快,工作电压较低等优点。研究了该三极管结构中的尖端曲率半径、尖端相对高度、栅极电压和阳极电压对场发射特性的影响,有助于设计和优化该类器件结构。这种平面型纳米真空三极管可望成为真空集成电路的基础器件,并在卫星等航空航天领域等需要抗辐射领域获得应用。 相似文献
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硅薄膜场发射阴极的制造和性能 总被引:1,自引:0,他引:1
本文评述了薄膜场发射阴极的一般制造方法后,介绍了我们的制造技术。我们用硅材料为基体,用各向同性的湿法化学腐蚀工艺制出尖端,用氧化增尖和自对准栅极工艺制成TFFEC—薄膜场发射阴极。外加阳极就构成了三极管。本文给出了TFFEC和三极管的测试性能。 相似文献
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为发展场致发射冷阴极毫米波电真空辐射源器件, 对利用大面积碳纳米管冷阴极产生大电流、高电流密度电子注的电子光学系统进行了研究.通过在Pierce电子枪阴极表面引入栅网结构, 解决了碳纳米管冷阴极场致发射所需的强电场和电子聚束问题.在碳纳米管冷阴极实验测试数据的基础上, 采用粒子模拟软件对上述电子光学系统进行了仿真.研究了栅网对注电流、注腰半径和电子注散射的影响, 分析了阳极电压和外加轴向磁场对电子注的聚束作用.优化后的仿真结果表明在阴极发射面为3.03 cm2时, 该电子光学系统能够产生210 mA、60 kV, 电流密度为6.7 A/cm2, 最大注半径为1mm的电子注. 相似文献
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以场发射基本原理为基础,建立四种四极管模型,采用有限差分法对微孔径场发射阵列进行了模拟.在建立模型时,采用的是相同的结构参数,如栅极到阳极间的距离,发射体尖锥的材料和形状,绝缘层的厚度以及各个结构体的电压.各个模型不同的地方在于聚焦级的位置和厚度不同.通过调整聚焦级的位置找到各种结构的最佳发射性能位置,然后通过比较在不同栅极电压的情况下,比较四种结构发射的特性如聚焦性和电流大小,得到一般性结论,并讨论分析了导致电子束光斑大小变化的原因,得出与实际相符合的数值模拟和优化结构,为试验提供设计依据. 相似文献
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对采用阳极氧化法及阴极还原表面处理技术制备的性能稳定的纳米多孔硅,用原子力显微镜(AFM)表征了其微观结构,多孔硅颗粒粒径在30 nm左右.室温条件下测试了多孔硅场电子发射的特性,结果表明,多孔硅具有很好的场致发光性能,在5 V/μm的电场下就可以产生场发射电流.多孔硅的开启电压在1 000 V左右,发射电流随着电压的增大而不断增大,发射电压在2 000 V以上.Abstract: Nanoscale porous silicon (PS) was prepared by anodic oxidation, cathode reduction and surface treatment technique. The porous silicon particles with the average diameter of about 30 nm were obtained by characterizing their microstructure with atomic force microscope (AFM). Electron field emission characteristics of porous silicon were investigated at room temperature. The resuhs demonstrate that porous silicon has favorable electroluminescence properties, and the field emission current can be generated only under the electric field of 5 V/ μm. And the turn - on voltage is about 1 000 V. With the increase of the offered voltage, the emission current is enhanced and the emission voltage is over 2 000 V. 相似文献
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Jun‐Tae Kang Jae‐Woo Kim Jin‐Woo Jeong Sungyoul Choi Jeongyong Choi Seungjoon Ahn Yoon‐Ho Song 《ETRI Journal》2013,35(6):1164-1167
We correlate the failure in miniature X‐ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X‐ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X‐ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X‐ray tubes. 相似文献
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《Electron Devices, IEEE Transactions on》1985,32(4):822-830
Focussing attention to the performance of high-speed high off-state voltage and large current provided in the buried-gate-type static induction (SI) thyristor, a 2300-V 150-A low-voltage-drop high-speed medium-power SI thyristor was developed. Irrespective of the magnitude of switching current, the SI thyristor has the characteristics of fast turn-on time and less on-gate current compared to that of the GTO thyristor. The characteristics of this SI thyristor obtained as the result of manufacturing this prototype were such that the forward blocking voltage was 2300 V at a gate reverse voltage of -5 V, the reverse blocking voltage was 2350 V, and the forward voltage drop was 1.4 V at an anode current of 150 A and 2.2 V at an anode current of 450 A. The switching characteristics were such that the turn-on time was 1.5 µs when an anode current IA of 150 A becomes ON, turnoff time was 2.5 µs at IA = 100 A and 3.6 µs at IA = 200 A. This SI thyristor is able to break the anode current of 1000 A at a gate current of 95 A. Performance exceeding 1100 A/µs was confirmed for the di/dt capability and even for dv/dt, and these normally can be operatable even at 100 times higher current compared with maximum average current. 相似文献
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A low-cost ceramic grid was used as a stand-alone focusing electrode in field emitter arrays to obtain high brightness and small electron beam size. The ceramic grid with an array of 200-μm holes was made from DuPont 591 with low-cost equipment. Beam size is controllable by the voltage applied to the focusing grid. Light intensity profiles were measured and analyzed. The full width at half maximum (FWHM) of the light profile excited by electron emission from 30-μm wide field emitter arrays is 60 μm at 5000 V with 6 mm anode-cathode separation. At an anode voltage of 2000 V and gate voltage of 55 V, focusing is optimized at a focusing voltage of 30 V. Arc-free operation at 10 kV was achieved, thereby promoting improved phosphor efficiency. This focusing approach may lead to improve lifetimes for field emission displays and other vacuum microelectronic devices by significantly increasing the total vacuum volume and providing a means for improved getter utilization 相似文献
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Kang W.P. Wisitsora-at A. Davidson J.L. Kerns D.V. 《Electron Device Letters, IEEE》1998,19(10):379-381
A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp2 content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters 相似文献