Dynamical Magnetoelectric Coupling in Multiferroic BiFeO<Subscript>3</Subscript>

In this study, the magnon excitations in multiferroic BiFeO₃ (BFO) have been discussed. The studies are based on the spin wave theory and Katsura’s model. The influence of the spin wave excitations on the terahertz absorption is discussed. The antiferromagnetic and ferroelectric interactions in multiferroic BFO were included using an effective fermion Hamiltonian. This Hamiltonian is bosonized and diagonalized, using Holstein–Primakoff and Bogoliubov transformations, respectively. An effective boson Hamiltonian is diagonalized to determine the excitation energy of the spin wave. The results obtained in this study are in qualitative agreement with the experimental data.     

Study on the Magnetic and Ferroelectric Properties of Bi<Subscript>0.95</Subscript>Dy<Subscript>0.05</Subscript>Fe<Subscript>0.95</Subscript>M<Subscript>0.05</Subscript>O<Subscript>3</Subscript> (M = Mn,Co) Ceramics

The co-doped Bi_0.95Dy_0.05Fe_0.95M_0.05 O ₃ (M = Mn, Co) samples were successfully prepared by a solid-state reaction method. At room temperature, the structural, ferromagnetic, and ferroelectric properties of the samples were measured and analyzed. An x-ray diffraction (XRD) experiment shows that co-doping leads to some structure changes. Magnetic hysteresis loops indicate that Dy-Mn and Dy-Co co-doping both can increase the ferromagnetic but the latter is superior to the former caused by the different magnetic arrangement. Furthermore, it is found that Dy-Mn co-doping is better than Dy-Co co-doping on enhancing its ferroelectricity.     

Critical Behavior of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>Mn<Subscript>0.95</Subscript>Fe<Subscript>0.05</Subscript>O<Subscript>3</Subscript> Manganite

The critical behavior of perovskite manganite La_0.67Ba_0.33Mn_0.95Fe_0.05O₃ at the ferromagnetic–paramagnetic has been analyzed. The results show that the sample exhibited the second-order magnetic phase transition. The estimated critical exponents derived from the magnetic data using various such as modified d’Arrott plot Kouvel–Fisher method and critical magnetization M(T _C, H). The critical exponents values for the La_0.67Ba_0.33Mn_0.95Fe_0.05O₃ are close to those expected from the mean field model β = 0.504 ± 0.01 with T _C = 275661 ± 0.447 (from the temperature dependence of the spontaneous magnetization below T _C ), γ = 1.013 ± 0.017 with T _C = 276132 ± 0.452 (from the temperature dependence of the inverse initial susceptibility above T _C ), and δ = 3.0403 ± 0.0003. Moreover, the critical exponents also obey the single scaling equation of M(H, ε) = |ε| ^β f _±(H/|ε| ^β+γ ).     

The Multiferroic Properties of (Bi<Subscript>0.9</Subscript>Ba<Subscript>0.1</Subscript>)(Fe<Subscript>0.95</Subscript>Mn<Subscript>0.05</Subscript>)O<Subscript>3</Subscript> Films

(Bi_0.9Ba_0.1)(Fe_0.95Mn_0.05)O₃ films were prepared on LaNiO₃-coated surface oxidized Si substrates. XRD and Raman measurements confirm that the (Bi_0.9Ba_0.1)(Fe_0.95Mn_0.05)O₃ film has pure R3c structure. Clear ferromagnetism with saturated magnetization of about 25 emu/cm³ has been observed at room temperature. The ferroelectric properties of the (Bi_0.9Ba_0.1)(Fe_0.95Mn_0.05)O₃ film was confirmed by the observation of the ferroelectric domains and the converse piezoelectric coefficient d ₃₃ versus applied voltage hysteresis loops by piezoelectric force microscopy (PFM). The observation of ferromagnetism and ferroelectricity in (Bi_0.9Ba_0.1)(Fe_0.95Mn_0.05)O₃ films indicates the potential multiferroic applications.     

Magnetoelectric Ordering of BiFeO<Subscript>3</Subscript> from the Perspective of Crystal Chemistry

In this paper we examine the role of crystal chemistry factors in creating conditions for formation of magnetoelectric ordering in BiFeO₃. It is generally accepted that the main reason of the ferroelectric distortion in BiFeO₃ is concerned with a stereochemical activity of the Bi lone pair. However, the lone pair is stereochemically active in the paraelectric orthorhombic ß-phase as well. We demonstrate that a crucial role in emerging of phase transitions of the metal-insulator, paraelectric-ferroelectric and magnetic disorder-order types belongs to the change of the degree of the lone pair stereochemical activity—its consecutive increase with the temperature decrease. Using the structural data, we calculated the sign and strength of magnetic couplings in BiFeO₃ in the range from 945?°C down to 25?°C and found the couplings, which undergo the antiferromagnetic?→?ferromagnetic transition with the temperature decrease and give rise to the antiferromagnetic ordering and its delay in regard to temperature, as compared to the ferroelectric ordering. We discuss the reasons of emerging of the spatially modulated spin structure and its suppression by doping with La³⁺.     

Toroidal spin ordering in BiFeO<Subscript>3</Subscript>, GaFeO<Subscript>3</Subscript>, and Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> in the Faddeev model with a magnetic field

The Fadeev model is used for describing the recently discovered toroidal spin ordering in piezoelectric and ferrimagnetic GaFeO₃ and piezo- and magnetoelectric Cr₂O₃ and BiFeO₃. A stable toroidal solution of the Faddeev model with the topological charge Q= 1 in an external homogeneous magnetic field was obtained using the trial function method. The energy of a toroid as a function of its radius (R) was determined at various values of the external magnetic field (H). It was shown that the energy minimum is shifted toward smaller R’s with an increase in H. At a critical field value, the torus collapses so that the local spin structure disappears. It is suggested to use magnetic field for controlling the torus size in multiferroics, promising materials of spintronics.     

Giant Magnetoresistance in Topological Insulator Bi<Subscript>1.98</Subscript>Nd<Subscript>0.02</Subscript>Se<Subscript>3</Subscript> Single Crystal

Doped topological insulators (TI) Bi_2?x Nd _x Se₃ single crystals were prepared by the self-flux method. The phase structure, magnetic properties, and electrical transport properties of the samples were studied. The X-ray diffraction (XRD) patterns of the sample indicate an incorporation of Nd into the Bi₂Se₃, and the crystal can be easily cleaved with silvery surface. The Bi_2?x Nd _x Se₃ sample shows a giant magnetoresistance (MR) with different magnetic field. The positive magnetoresistance (MR) can reach 190 % at the field of 9 Tesla when the field is perpendicular to ab-plane of the crystal. In addition, at low magnetic fields, the MR exhibits a weak antilocalization (WAL) cusp.     

Scaling behavior of dynamic hysteresis in Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics

The scaling behavior of dynamic hysteresis was investigated in Bi_3.15Nd_0.85Ti₃O₁₂ bulk ceramics at a frequency of 1–1000 Hz and an external electric field amplitude of 79–221 kV/cm. The scaling behavior at low amplitude (E ₀ ≤ 114 kV/cm) takes the form of \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.7}\) for low frequency (f ≤ 200 Hz) and \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.22}\) for high frequency (f > 200 Hz), where \(\langle A \rangle\) is the area of hysteresis loop and f and E ₀ are frequency and amplitude of external electric field, respectively. At high amplitude (E ₀ > 114 kV/cm), we obtain \(\langle A \rangle \propto f^{0.011} E_{0}^{1.163}\) at low frequency and \(\langle A \rangle \propto f^{ - 0.015} E_{0}^{0.7}\) at high frequency. At low E ₀, the contribution to the scaling relation mainly results from reversible domain switching, while at high E ₀ reversible and irreversible domain switching concurrently contribute to the scaling relation.     

Preparation and microwave absorption properties of BiFeO<Subscript>3</Subscript> and BiFeO<Subscript>3</Subscript>/PANI composites

BiFeO₃(BFO) particle was successfully synthesized by normal citric acid sol–gel method and the size of BiFeO₃ particle is about 200 nm. BiFeO₃/polyaniline (PANI) composites with the different weight ratio were synthesized by in situ emulsion polymerization. The citric acid doped PANI is fibrous and form a loose structure outside the BFO particle. With the increasing of PANI, the conductivity value of composites are increasing to 9.34?×?10^?2 S/cm. Moreover, the permittivity also enhance with the increasing of conductivity, which contribute to the improvement of dielectric loss. Microwave absorbing properties were investigated with a vector network analyzer in 1–18 GHz. The minimum reflection loss (RL) value is about ?40.2 dB at 8.3 GHz when the thickness is 3.5 mm, and the maximum bandwidth less than ?10 dB is 3.5 GHz (from 13.5 to 18 GHz) at the thickness of 2 mm. 3 mm millimeter-wave-attenuation properties were also tested, and the maximum attenuation value of BFO/PANI composites reach 15.71 dB. The composites can dissipate microwave energy into heat effectively by dielectric relaxation because of the suitable conductivity. The interface scattering and multiple reflections also play a important role because of the increasing of a loose structure. The BFO/PANI composite can be taken as a promising lightweight and multiband microwave absorber.     

Electron Spin Resonance Study of Polycrystalline La<Subscript>0.4</Subscript>Bi<Subscript>0.1</Subscript>Ca<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript>

We have inspected the magnetic properties of polycrystalline La_0.4Bi_0.1Ca_0.5MnO₃ using electron spin resonance (ESR) in the temperature range 150–280 K. The temperature dependence of magnetization indicates that the Curie temperature is T _C= 225 K. ESR spectra revealed that the sample is not completely paramagnetic above its Curie temperature through the presence of ferromagnetic interactions in the temperature range 225–270 K which can be attributed to the presence of Griffiths phase in this temperature range. The sample becomes completely paramagnetic above 270 K. The presence of Griffiths phase can be attributed to the disorder induced by the 6 s ² lone pair electrons of Bi³⁺ ions.     

Magnetic,magnetocaloric properties,and critical behavior in a layered perovskite La<Subscript>1.4</Subscript>(Sr<Subscript>0.95</Subscript>Ca<Subscript>0.05</Subscript>)<Subscript>1.6</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

We report the results of magnetic, magnetocaloric properties, and critical behavior investigation of the double-layered perovskite manganite La_1.4(Sr_0.95Ca_0.05)_1.6Mn₂O₇. The compounds exhibits a paramagnetic (PM) to ferromagnetic (FM) transition at the Curie temperature T _C = 248 K, a Neel transition at T _N = 180 K, and a spin glass behavior below 150 K. To probe the magnetic interactions responsible for the magnetic transitions, we performed a critical exponent analysis in the vicinity of the FM–PM transition range. Magnetic entropy change (??S _M) was estimated from isothermal magnetization data. The critical exponents β and γ, determined by analyzing the Arrott plots, are found to be T _C = 248 K, β = 0.594, γ = 1.048, and δ = 2.764. These values for the critical exponents are close to the mean-field values. In order to estimate the spontaneous magnetization M _S(T) at a given temperature, we use a process based on the analysis, in the mean-field theory, of the magnetic entropy change (??S _M) versus the magnetization data. An excellent agreement is found between the spontaneous magnetization determined from the entropy change [(??S _M) vs. M ²] and the classical extrapolation from the Arrott curves (µ₀H/M vs. M ²), thus confirming that the magnetic entropy is a valid approach to estimate the spontaneous magnetization in this system and in other compounds as well.     

Magnetotransport at the LTO-LTT Structural Transition in La<Subscript>1.48</Subscript>Nd<Subscript>0.4</Subscript>Sr<Subscript>0.12</Subscript>CuO<Subscript>4</Subscript>

Magnetoresistance (MR) was measured in a La_1.48Nd_0.4Sr_0.12CuO₄ single crystal in perpendicular magnetic fields H up to 9 T in the region of the structural transition from the low-temperature orthorhombic (LTO) to low-temperature tetragonal (LTT) phase. The hysteretic MR exhibits discrete jumps or avalanches only when the transition is approached from the LTT phase, and only during the first field sweep. The properties of the hysteresis are found to be independent of the field driving rate. The results are consistent with the presence of magnetostructural domains coupled with the charge degrees of freedom.     

Dielectric and Structural Properties of Bi<Subscript>5</Subscript>Ti<Subscript>3</Subscript>FeO<Subscript>15</Subscript> Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

Bi₅Ti₃FeO₁₅ (BTFO), an Aurivillius compound, was synthesized via sintering the Bi₂O₃ and Fe₂O₃ mixture and TiO₂ oxides. The precursor material was ground in a high-energy attritorial mill for (1, 3, 5, and 10) h. The orthorhombic system Bi₅Ti₃FeO₁₅ ceramics was obtained by a solid-state reaction process at 1313 K. Phase formation behavior was investigated using differential thermal analysis (DTA), thermal gravimetric (TG), and X-ray diffraction (XRD) techniques. The frequency-dependent properties of the material were investigated by impedance spectroscopy. The impedance spectroscopic method is widely used to characterize electrical properties of materials and their interfaces with electronically conducting electrodes. These studies indicate that 1h, 3h, and 5h primary high-energy ball milling followed by sintering is a promising technique for pure Bi₅Ti₃FeO₁₅ ceramic preparation, whereas the ceramics obtained from the substrates after 10h milling is a two-phase material. As the result of this investigation, the model of adjusting the Nyquist charts with a three-element R-CPE (constant phase element) series connection was proposed. It was found that the value of the dielectric constant at the Curie temperature decreases when the milling time of the substrates increases. The decrease in the dielectric constant is influenced by the great dispersion of the grains, their dense packing, and location of particular grains in relation to other grains. Moreover, the change of resistivity with frequency indicates that relaxation processes take place in the material. In conclusion, it was reported that the optimal milling time of precursor oxide powders for carrying out the sintering process is equal to 5 h. Then the obtained ceramics contain one phase and exhibit the highest dielectric properties for practical applications.     

The ferroelectric properties and residual stress analysis of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films with a LaNiO<Subscript>3</Subscript> buffer layer

Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin film with a thin LaNiO₃ film as buffer layer was fabricated by sol–gel method on Pt/TiO₂/SiO₂/Si substrate. The BNT thin films have a perovskite phase with a dense microstructure. The P _r and V _c value are 25.5 μc/cm² and 3.7 V, respectively under the applied voltage of 15 V. After the switching of 2 × 10⁹ cycles, the P _r value decreases to 86% of its pre-fatigue value. The leakage current density of the BNT thin films with LaNiO₃ buffer layer were generally in the order of 10⁻⁸ to 10⁻⁶ A/cm². The fatigue and leakage current properties were improved dramatically compared with the BNT film without a LaNiO₃ buffer layer that we prepared before. The measured residual stress was tensile stress and its value was 176 MPa.     

Photoluminescence and raman spectra of (Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>(Sm<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.05</Subscript> crystals

We have measured the photoluminescence and Raman spectra of (Ga₂S₃)_0.95(Sm₂O₃)_0.05 crystals and identified the mechanism of the energy transfer from the host to the rare-earth ion and the vibrational modes of the constituent atoms.     

Spectral optoelectronic features of Cu-containing arsenic sulfide (As<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>Cu<Subscript>0.05</Subscript>

Chalcogenide amorphous thin films of the modification (As₂S₃)_0.95Cu_0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6–2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.     

Interfacial capacitance in epitaxial heterostructures La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO

Epitaxial trilayer heterostructures of the type La_0.67Ca_0.33MnO₃/SrTiO₃/La_0.67Ca_0.33MnO₃ were grown by laser ablation on (001)[(LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7] substrates. The real part of the dielectric permittivity ε and the loss factor tan δ of a 1100-nm-thick SrTiO₃ interlayer were studied in the temperature interval T=4.2–300 K in a nonbiased state and at a bias voltage of ±2.5 V applied to the manganite electrodes. Using the temperature dependence ε(T) measured for the SrTiO₃ layer grown between the manganite electrodes, we have estimated the capacitance of La_0.67Ca_0.33MnO₃/SrTiO₃ interfaces (C₁≈2 μF/cm²) related to the electric field penetrating from the interlayer into La_0.67Ca_0.33MnO₃.     

Compounds WAl<Subscript>4</Subscript>, WAl<Subscript>3</Subscript>, W<Subscript>3</Subscript>Al<Subscript>7</Subscript>, and WAl<Subscript>2</Subscript> and Al-W-N combustion products

X-ray diffraction data are presented for combustion products in the Al-W-N system. New, nonequilibrium intermetallic compounds have been identified, their diffraction patterns have been indexed, and their unit-cell parameters have been determined. The phases α-and β-WAl₄ are shown to exist in three isomorphous forms, differing in unit-cell centering. The phases α′-, α″-, and α?-WAl₄ are monoclinic, with a ₀ = 5.272 Å, b ₀ = 17.770 Å, c ₀ = 5.218 Å, β = 100.10°; point groups C12/c1, A12/n1, I12/a1, respectively. The phases β′-, β″-, and β?-WAl₄ are monoclinic, with a ₀ = 5.465 Å, b ₀ = 12.814 Å, c ₀ = 5.428 Å, β = 105.92°; point groups A112/m, B112/m, I112/m, respectively. The compounds WAl₂ and W₃Al₇, identified each in two isomorphous forms, differ in cell metrics (doubling) but possess the same point group: P222. WAl ₂ ^′ : orthorhombic, a ₀ = 5.793 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. WAl ₂ ^″ : orthorhombic, a ₀ = 11.586 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. W₃Al ₇ ^′ : orthorhombic, Pmm2, a ₀ = 6.225 Å, b ₀ = 4.806 Å, c ₀ = 4.437 Å. W₃Al ₇ ^″ : orthorhombic, Pmm2, a ₀ = 12.500 Å, b ₀ = 4.806 Å, c ₀ = 8.874 Å. The new phase WAl₃: triclinic, P1, a ₀ = 8.642 Å, b ₀ = 10.872 Å, c ₀ = 5.478 Å, α = 104.02°, β = 64.90°, γ = 107.15°.     

Interface roughness influence on exchange bias effect in La<Subscript>2/3</Subscript>Ca<Subscript>1/3</Subscript>MnO<Subscript>3</Subscript>/La<Subscript>1/3</Subscript>Ca<Subscript>2/3</Subscript>MnO<Subscript>3</Subscript> bilayers

A Monte Carlo simulation study of La_2/3Ca_1/3MnO₃/La_1/3Ca_2/3MnO₃ bilayers exchange bias (EB) properties by using a classical Heisenberg model and Monte Carlo method with Metropolis algorithm is addressed. Samples were built atom-by-atom in order to resemble the real roughness. In this model, several contributions included nearest neighbors exchange interactions; two different interface couplings, magnetocrystalline anisotropy and Zeeman term, were considered. Here, an influence of the relaxation steps on the interface roughness is present. Our study focuses on the influence of interface roughness on hysteresis loops, particularly EB field (H _ex) and coercive force (H _c). Results reveal that H _ex and H _c decrease as the interface roughness increases.