微波化学反应器内等离子体空间温度的测量研究

针对矩形波导微波化学反应器,在低气压,低功率,纯甲烷微波放电情况下,用朗缪尔探针测量了石英反应管内等离子体的分布,用热偶计测量了微波等离子体在空间的温度分布。在谐振腔中心位置,等离子体的空间温度可以达到829℃;而在等离子体边缘区域,空间温度仅为78℃。     

激光诱导荧光在低温等离子体诊断中的应用

激光诱导荧光技术(LIF)应用到等离子体中已经有超过20年的历史,在等离子体处理中的应用也已经持续了十多年。激光诱导荧光系统可以用于刻蚀、溅射以及薄膜沉积等离子体源的诊断研究。离子密度和速度分布及对流、传播参数等,都可以用LIF直接测量或间接计算得到。LIF可以得到时间分辨和空间分辨的离子分布方程,可用于等离子体热力学和等离子体迁移的研究。     

HT-7托卡马克装置上微波辐射测量研究

15道组成的电子回旋辐射温度测量系统，已安装在HT-7装置上，可以测量98GHz～124GHz来自于HT-7托卡马克等离子体的电子回旋辐射波的强度，从而获得电子温度。和其他电子温度诊断，如软x射线能谱记数，汤姆逊散射诊断以及边界静电探针相比，具有较好的时间分辨并可以给出电子温度分布。实验结果显示，在欧姆放电条件下，可以给出电子温度的时间演变，并在大于1．8T的纵场条件下，给出等离子体电子温度的分布。     

利用行波产生微波等离子体

在沿介质线的180×300mm~2的大范围内,行波产生了2.45GHz 的均匀有源微波等离子体。氩(Ar)等离子体的亮度温度在644±17℃以内。在200帕的气压下,电子温度和密度相应为4eV 和4×10~(11)cm~(-3),与小微波等离子体发生器具有相同的数量级。能容易地扩大等离子体面积。     

HT-7 托卡马克装置上微波辐射测量研究

15道组成的电子回旋辐射温度测量系统,已安装在HT-7装置上,可以测量98GHz～124GHz来自于HT-7托卡马克等离子体的电子回旋辐射波的强度,从而获得电子温度.和其他电子温度诊断,如软x射线能谱记数,汤姆逊散射诊断以及边界静电探针相比,具有较好的时间分辨并可以给出电子温度分布.实验结果显示,在欧姆放电条件下,可以给出电子温度的时间演变,并在大于1.8T的纵场条件下,给出等离子体电子温度的分布.     

钨电极辅助微波等离子体水蒸汽制氢的多物理场计算

通过电磁场和等离子体场耦合的方法对钨电极辅助微波等离子体制氢过程进行多物理场耦合计算, 并对制氢过程中的电子密度、电子温度、氢气和水蒸汽的浓度进行计算。计算结果表明,在10-16 s 到10-15 s 过程中, 电子密度和电子温度增加并由电极向四周扩散,氢气浓度缓慢增加。在10-15 s 到10-14 s 过程中,电子密度和电子温 度分别达到最大值5.45×1017个电子/ m3 和1.83×105 eV,氢气浓度增加了1.783×10-15 mol/ m3 远大于其它时间段。 在10-14 s 到10-13 s 过程中,电子密度和电子温度不增反降,氢气浓度增加也趋于平缓。由此表明,在10-15 s 到10-14 s 过程中,电子密度和电子温度达到最大时制氢速率也达到最大。     

金属表面激光烧蚀的发射光谱分析

时间和空间分辨发射光谱方法被用来研究短脉冲（５ｎｓ）激光烧蚀钛靶过程中产生的等离子体羽。通过测量其中钛原子和离子的发射光谱，计算了等离子体羽的膨胀速度，讨论了钛原子和一价离子密度的时间分布和时间演化以及激光参数的影响。     

微波频率与功率对微波等离子体参数的影响

本文研究了微波功率和微波频率对等离子体参数,如电子密度、电子温度、气体温度以及火焰长度的影响。对等离子体的多物理场数值仿真是在基于有限元法的COMSOL Multiphysics中进行的。计算结果显示,等离子体电子密度、电子温度、气体温度都会随着输入微波功率的增大而增大;2450 MHz的微波等离子体相比于915 MHz的微波等离子体,具有更好的性能。同时,本文对不同输入功率下等离子体火焰长度进行了实验测量,结果显示输入功率对火焰长度仅有很微弱的影响。     

激光诱导铝合金等离子体的时间演化过程研究

为了深入研究激光诱导等离子体的物理特性,提高激光诱导击穿光谱(LIBS)技术的测量精度和可靠性,对激光诱导等离子体的时间演化过程进行了实验研究。采用ICCD相机对激光诱导铝合金等离子体进行快速成像,发现激光诱导铝合金等离子体的寿命大约为30μs,等离子体呈现明显的分层结构,并且不同区域的面积和温度在等离子体的时间演化过程中呈现不同的特征。通过玻尔兹曼斜线法和Stark展宽法计算了铝合金等离子体电子温度和电子数密度的时间演化规律。实验结果表明,等离子体的电子激发温度在6000K~9000K之间,且前3μs下降较快;等离子体电子数密度为1017 cm-3量级,并随ICCD探测延迟时间缓慢降低。等离子体电子温度和电子数密度的时间演化规律与ICCD相机快速成像结果一致。     

微波气体击穿过程的模拟计算

本文利用流体模型,将无外加恒定磁场的等离子体当作各项同性的有耗媒质,求得圆柱腔结构中的微波场分布。耦合电子、离子运动的流体方程,对微波等离子体的初始形成过程进行了数值模拟计算。结果表明,在电离的初始阶段,电子、离子密度分布与场分布同步。同时,存在一关键电子密度。超过此密度后,微波场在表面快速衰减,气体电离主要在表面进行。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.