影响真空自耗电极电弧炉电弧稳定性的因素及对策

本文总结了影响真空自耗电极电弧炉电弧稳定的多种因素。通过理论分析，总结出在设计和控制方面采取的应对方案和方法。     

ZHT100型1 t真空自耗电弧炉的研制

本文介绍了ZHT100型1t真空自耗电弧炉的结构、组成及工作过程。指出了调试过程中存在的问题，这种由我们自行设计、制造的1t真空自耗电弧炉已出口国外，一次试车成功并投入使用。     

脉冲真空弧离子源的质谱分析

本文介绍了脉冲真空弧离子源的特点,建立了脉冲真空弧离子源工作瞬间放气成分的质谱分析系统.应用四极质谱仪记录了真空系统中离子源工作前后的谱图,并通过数据软件的二次处理初步取得了脉冲真空弧离子源放电空间的增量成分分析;开展了不同绝缘介质对脉冲真空弧离子源工作瞬间所产生气体成分的对比研究.     

Structural and optical properties of Ti-doped ZnO thin films prepared by the cathodic vacuum arc technique with different annealing processes

Highly transparent Ti-doped ZnO thin films were prepared on glass substrates at a deposition rate of approximately 33 nm/min using the cathodic vacuum arc technique with a Zn target power of 550 W and a Ti target power of 750 W, respectively. X-ray diffraction measurements have shown that the Ti-doped ZnO thin film with a vacuum post-annealing condition is c-axis oriented but an amorphous phase at the other post-annealing atmosphere and as-deposited condition. Transmittance measurements show that the best optical quality of the Ti-doped ZnO thin films occurred at a post-annealing atmosphere of N₂/H₂ mixed gases. Additionally, the optical transmittance of all films has been found more than 85% in a range of 500-700 nm. The lowest electrical resistivity was 3.48 × 10⁻³ Ω cm, obtained on as-deposited films. However, the post-annealing condition greatly increased the resistivity.     

真空磁过滤电弧离子镀沉积Ti-O薄膜及其血液相容性

采用真空磁过滤电弧离子镀技术在单晶硅(100)和载玻片表面沉积Ti-O薄膜,研究了不同氧分压(0.08、0.13、0.2Pa)对薄膜结构及血液相容性的影响.研究结果表明,随着氧分压的提高,Ti-O薄膜相结构从三氧化二钛转变为金红石结构二氧化钛.扫描电子显微镜观察表明,所制备薄膜表面结构致密,与基体结合紧密.血小板粘附实验结果表明,0.13Pa下制备的薄膜血液相容性优异,优于临床应用的热解碳材料.     

Dynamics of cathode spots in an axial magnetic field on the fall of a current pulse in a high-current vacuum arc

The cathode attachment of a high-current vacuum arc on the fall of a current pulse was studied. Contacts generating an axial magnetic field were used. The revealed transformation of the attachment shape near zero current was explained quantitatively in a way that was in satisfactory agreement with experimental results.     

Tribological property enhancement of CrN films by metal vapor vacuum arc implantation of Vanadium and Carbon ions

CrN films have been extensively used in precision forming and molding applications because of their excellent tribological properties and oxidation-resisting characteristics. Vanadium and carbon ions are introduced into the near surface layer of deposited CrN films via metal vapor vacuum arc implantation to improve the wear performance of CrN films. Dense and smooth CrN film was deposited using a filtered arc deposition system, which provides fully ionized Cr plasma on the substrate surface. Subsequently, surface bombardment of the deposited CrN film with vanadium and carbon ions densifies the film and forms an alloy near the surface. These CrN-based films were characterized by X-ray photoelectron electron and Auger electron spectroscopies. Examinations of the tribological and mechanical film properties, including wear resistance, corrosion resistance and fracture toughness were performed and correlated with respect to the implantation parameters.     

Time and space resolved Langmuir probe measurements of a pulsed vacuum arc plasma

The time and space evolution of pulsed vacuum arc plasma parameters have been measured using a single cylindrical Langmuir probe in a free expansion cup. Electron density n_e, effective electron temperature T_eff and electron energy distribution function (EEDF) are derived from the I-V curves using Druyvesteyn method. Results show that during the discharge time, the electron density n_e is between 0.27 and 1.82 × 10¹⁸ m⁻³ and the effective electron temperature T_eff is between 6.14 and 14.72 eV, both of which decrease as a function of the discharge time. The electron energy distribution function (EEDF) is no-Maxwellian since the high-energy electrons depart from the Maxwellian distribution. Due to the plasma expansion, the electron density n_e decreases as increase of the expansion distance, but the effective electron temperature T_eff is weakly dependent on the distance in the free expansion cup.     

Grain structure in cathode spot trail of low vacuum arc discharge

Low vacuum arc discharge treatment in 10 Pa is applied to cleaning of a stainless steel plate, the surface of which is covered with an oxide layer. During the discharge, several luminous cathode spots move continuously in random directions on the surface of the stainless steel plate. They remove the oxide layer owing to their high energy density and leave their trail on the sample surface. Microscopic observation reveals a chain structure of metallic grains along the center of the cathode spot trail. Some chemical agents put on the oxide layer before cleaning affect on the size and the number density of the grain, which leads to the different surface roughness after treatment.     

两种不同铁芯结构纵磁真空灭弧室触头三维磁场对比分析

本文建立了两种不同铁芯结构的纵向磁场真空灭弧室触头三维模型,一种铁芯为带有断口的环状结构,另一种是由12个柱状铁芯圆周方向排列的结构,采用有限元分析方法对两种结构的三维模型进行仿真计算,分析对比两种铁芯结构对电流峰值时刻纵向磁场和电流过零时剩余磁场以及磁场滞后时间的影响,计算的过程中考虑到了涡流的影响。从仿真结果中可以得到以下结论:1.电流峰值时环状铁芯结构产生的纵向磁场大于柱状铁芯结构,但柱状铁芯结构产生的纵向磁场比环状铁芯结构的均匀;2.电流过零时两种铁芯结构的剩余磁场分布相似,但环状铁芯结构的剩余纵向磁场大于柱状铁芯结构;3.柱状铁芯结构的磁场滞后时间要小于环状铁芯结构,电流过零时剩余磁场强的区域对应的磁场滞后时间也大。     

Filtered vacuum arc deposition of transparent conducting Al-doped ZnO films

Transparent conducting ZnO:Al and ZnO films of 380-800 nm thickness were deposited on glass substrates by filtered vacuum arc deposition (FVAD), using a cylindrical Zn cathode doped with 5-6 at.% Al or a pure Zn cathode in oxygen background gas with pressure P = 0.4-0.93 Pa. The crystalline structure, composition and electrical and optical properties of the films were studied as functions of P. The films were stored under ambient air conditions and the variation of their resistance as function of storage time was monitored over a period of several months.The Al concentration in the film was found to be 0.006-0.008 at.%, i.e., a few orders of magnitude lower than that in the cathode material. However, this low Al content influenced the film resistivity, ρ, and its stability. The resistivity of as-deposited ZnO:Al films, ρ = (6-8) × 10^− 3 Ω cm, was independent of P and lower by a factor of 2 in comparison to that of the ZnO films deposited by the same FVAD system. The ρ of ZnO films 60 days after deposition increased by a factor of ∼ 7 with respect to as-deposited films. The ZnO:Al films deposited with P = 0.47-0.6 Pa were more stable, their ρ first slowly increased during the storage time (1.1-1.4 times with respect to as-deposited films), and then stabilized after 30-45 days.     

真空自耗电极电弧炉闭锁阀研制与使用功效

介绍了能安全可靠地在真空自耗电弧炉中炼钛时的高温、污染的环境下长期使用的闭锁阀的研制、阀的结构原理和实用中提高生产效率的例子。     

影响VAR炉熔炼安全的因素及对策

总结了影响VAR炉熔炼安全的多种因素,通过理论分析,总结出在设计和控制方面采取的应对方案和方法.     

The preparation and blood compatibility of pure iron thin film using filter cathode vacuum arc

用磁过滤阴极真空弧源法在单晶硅基片上制备纯铁薄膜,分析了薄膜表面的组成、元素价态和薄膜的物相结构,研究了薄膜的腐蚀降解行为和抗凝血性能. 结果表明:具有纳米晶粒的纯铁薄膜其腐蚀速率低于普通晶粒的纯铁,在纯铁薄膜表面粘附的血小板数量少于316L不锈钢, 且激活和团聚比较轻微,增生的伪足数量比较少;纯铁薄膜表面对血浆中的凝血因子激活比较轻微,具有较好的抗腐蚀性和血液相容性.     

沉积气压对电弧离子镀制备ZnO薄膜的结构和性能影响

采用阴极真空电弧离子镀技术在玻璃衬底上制备出了具有择优取向的透明ZnO薄膜. 利用X射线衍射仪、扫描电子显微镜及紫外-可见吸收光谱仪分别对ZnO薄膜的结构、表面形貌及可见光透过率进行了分析.XRD结果表明,所制备的ZnO薄膜具有六角纤锌矿结构的(002)和(101)两种取向,在沉积气压＞1.0Pa时所制备的ZnO薄膜具有(002)择优取向,并且非常稳定.SEM图表明,ZnO晶粒大小较为均匀,晶粒尺寸随着气压升高而变小.在400～1000nm范围内,ZnO薄膜的可见光透过率超过80%,吸收边在370nm附近,所对应的光学带隙约为3.33～3.40eV,并随着沉积气压上升而变大.     

Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 × 10⁻³ Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.     

真空开关电弧等离子体特性诊断技术研究进展

阐述了真空电弧等离子体特性诊断的重要意义,列举了常用的诊断方法及其工作原理,综述了近年来国内外关于真空电弧等离子体特性诊断方面的实验研究进展。     

大电流真空电弧阳极熔蚀过程的热力学仿真研究

真空介质开关电弧的主要成分源于故障电流开断过程中触头电极在极间产生的金属蒸气,且真空电弧的微观动力学行为直接影响开关的开断能力。文章通过建立真空介质电弧双温磁流体动力学模型,研究配用不同配比CuCr合金触头电极材料的真空介质开关在故障电流开断下阳极热过程的变化情况,得到阳极触头表面温度和熔池范围沿径向和轴向的分布。仿真结果表明,开断故障电流的增大及电极合金材料中Cu含量的增大均会导致输入阳极的能流密度增大。在200 A电弧电流作用下,阳极表面温度未达到CuCr合金的熔点,未发生熔化;而在6 kA电弧电流作用下,阳极温度先后达到Cu和Cr的熔点,电极熔化程度随合金中Cr含量的增大而减弱。

     

基于模糊控制和PID控制的电弧炉直流电源的研究

本文针对真空电弧炉直流电源在熔炼阶段数字PID控制存在电流超调与响应速度矛盾的问题,提出了模糊控制和PID控制相结合的控制策略,着重介绍了模糊控制方法的应用,并在Matlab中对单个电源模块进行仿真.实验结果证明了这种控制方式的可行性和优势,具有良好的应用前景,且符合直流电源智能化、模块化的发展趋势.     

The influence of deposition rate on the stress and microstructure of AlN films deposited from a filtered cathodic vacuum arc

Aluminium nitride (AlN) thin films have been reactively deposited using a filtered cathodic vacuum arc system. A pulsed substrate bias was applied in order to increase the average energy of the depositing species. The stress and microstructure of the films were determined as a function of the deposition rate and pulse bias amplitude/frequency. The stress generated in films grown with high voltage pulsed bias depended on the deposition rate and a transition from tensile stress to compressive stress occurred as the deposition rate increased. This trend was accompanied by progressive changes in the microstructure. In order of increasing deposition rate, the films exhibited: a porous structure with tensile stress; a dense AlN film with compressive stress; and a dense AlN film showing evidence of a thermally induced reduction in stress.