一种氧化锌薄膜的制备方法

本发明涉及一种氧化锌薄膜的制备方法，属于半导体光电与器件领域。首先将锌盐、乙二胺溶于去离子水中，并用氢氧化钠溶液调节pH至10．50～12．00，制备成薄膜生长反应液，然后将处理过的基片平置于陶瓷加热板上，浸入到制备好的薄膜生长反应液中，控制加热温度100～150℃。反应20-加min后即可获得致密的氧化锌薄膜。本方法操作简单，成本低，生产周期短。     

掺铝氧化锌薄膜的制备及应用研究进展

综述了掺铝氧化锌薄膜的各种制备方法,包括磁控溅射法、脉冲激光法和溶胶凝胶法等;重点分析了掺铝氧化锌(ZAO)薄膜的结构、导电机理及光电性能;最后对薄膜的存在问题和应用情况进行了分析。     

关于半导体光电信息和功能材料的研究

材料技术水平的高低直接影响了国家工业技术的发展,因此当前各国都十分重视在材料技术方面的研发和投入.半导体光电信息功能材料是当前在世界范围内材料科学研究的重点领域之一,这主要是基于半导体材料同时具有光子性能和电子性能,在光电信息时代中有着巨大的发展潜力,能够提高人们的生活水平,促进社会经济发展.本文主要介绍了光电信息功能...     

氧化锌纳米线的制备及其应用研究

氧化锌纳米线是一种性能优异的新型功能材料,应用前景广阔。综述了氧化锌纳米线的常用制备方法,如化学气相法、电化学法、溶胶-凝胶法和溶液法,以及近年来新的应用领域和研究前沿。     

氧化锌晶须吸波材料研究应用进展

叙述了四针状氧化锌晶须(T–ZnOw)的制备方法和在吸波材料方面的应用现状,重点介绍了T–ZnOw磁改性方面的研究,即在T–ZnOw表面包覆磁性材料形成具有磁损耗和介电损耗的新型复合材料,不仅赋予复合材料良好的微波吸收性能,而且使材料表现出优异的综合性能,最后对T–ZnOw吸波材料的未来应用进行了展望。     

平面磁控溅射氧化锌（ZnO）薄膜的几个问题

Ｃ轴取向一致的氧化锌（ＺｎＯ）薄膜是一种良好的压电材料。采用平面磁控溅射是制备ＺｎＯ薄膜较为理想的一种方法。为讨论溅射用靶体的掺杂、溅射功率和基片温度等问题，本实验溅射使用掺有２￣５ｗｔ％碳酸锂（Ｌｉ２ＣＯ３）的烧结陶瓷靶；溅射功率６００Ｗ左右；沉积薄膜基片温度３００℃，并注意其他有关条件的调节，对获得的薄膜用ＸＲＤ等方法评价性能。     

氧化锌压敏材料研究与发展进展

本文简要回顾了ＺｎＯ压敏陶瓷的历史，阐述了ＺｎＯ压敏陶瓷的特点以及当前ＺｎＯ压敏陶瓷基础性研究的现状，最后对其进展进行了展望。     

超细氧化锌的制备及紫外屏蔽性能研究

以硝酸锌为主要原料,采用沉淀反应结合水热处理的方法制备超细氧化锌,并将其制备成紫外屏蔽膜,采用紫外分光光度仪测试屏蔽膜的紫外屏蔽性能。结果表明：添加微量氧化锌粉体的紫外屏蔽膜具有很好的可见光透光性和紫外屏蔽特性。氧化锌紫外屏蔽膜制备最佳工艺为：硝酸锌浓度为0.5　mol/L,固体氢氧化钠、硝酸锌晶体和十二烷基硫酸钠（SDS）物质的量比为15∶7∶1,水热温度为120　℃,水热时间为0.5　h,沉淀反应温度为70　℃,沉淀反应时间为0.5　h。     

载银氧化锌复合材料制备及其光催化性能研究

以滤纸为生物模板,二水合乙酸锌为原料制备ZnO,再以硝酸银为前驱体,通过光还原法制备Ag/ZnO复合材料。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和紫外可见漫反射(Uv-Vis DRS)对制备样品的物相形貌、组成及光吸收性能进行表征。以亚甲基蓝(MB)的光催化降解为目标反应评价其光催化活性。实验结果表明:载银含量为10%(质量分数)时,催化效果最佳;最佳催化条件下,10%Ag/ZnO对亚甲基蓝的150 min光催化降解率为96.5%;降解过程符合一级动力学模型,反应速率常数为单独ZnO的2.3倍;催化剂循环使用四次后,降解率仍高于90%;活性物种捕获实验表明,超氧自由基和空穴是主要反应活性物质,其中空穴起到关键作用。     

不同退火温度In掺杂ZnO薄膜的表面形貌和光学性质

用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计观察4%(原子分数)In掺杂ZnO薄膜的微结构、表面形貌和光学性质.微结构分析表明:薄膜仍为六角纤锌矿结构,由于In杂质的掺入,使得薄膜结晶度劣化,退火温度对薄膜微结构影响较小;表面形貌观察结果显示:薄膜表面凹凸不平,450 ℃退火处理薄膜表面最平坦,尺寸在50～100 nm之间小颗粒致密、均匀地分布于起伏的表面;紫外可见透射谱研究结果表明:随着退火温度升高,薄膜光学带宽E_g由3.267 eV减小到3.197 eV,该结果可能与薄膜表面残余应力发生变化密切相关.     

Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film

A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700°C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, small turn-on voltage, and high rectification ratio. By using ZnO as the QDs’ matrix, the carrier transport is dominated by the multistep tunneling mechanism, the same as in a n-ZnO/p-Si heterojunction diode, which clearly differs from that using the traditional matrix materials. Hence, the carriers transport mainly in the ZnO matrix, not through the Si QDs. The unusual transport mechanism using ZnO as matrix promises the great potential for optoelectronic devices integrating Si QDs.     

ZnO薄膜的制备及应用研究进展

ZnO作为一种新型的宽禁带半导体材料,具有很好的化学稳定性和热稳定性,抗辐射损伤能力强,在光电器件、压电器件、表面声波器件等诸多领域有着很好的应用潜力。本文主要介绍制备ZnO薄膜的技术和方法,并简要的介绍了ZnO薄膜的应用进展。     

ZnO nanowires decoration on carbon fiber via hydrothermal synthesis for paper-based friction materials with improved friction and wear properties

Two-step growth of ZnO nanowires (NWs) on carbon fiber (CF) surface via hydrothermal synthesis was studied and their application in the preparation of paper-based friction materials by wet-forming process was also investigated. SEM and EDS results showed a dense and uniform ZnO NWs layer with vertical alignment was well established on surface of CFs. UV–vis spectra and XRD characterization further confirmed the formation of ZnO NWs on CFs surface. In comparison with control sample (paper-based friction material containing pristine CFs), the modified sample (paper-based friction material containing modified CFs) exhibited higher and more stable dynamic friction coefficient and greater wear resistance. It was concluded that the CFs@ZnO NWs had excellent tribological properties and was highly promising for wet paper-based friction material.     

共掺杂ZnO纳米材料的制备及光学性能研究

利用共沉淀法制备了Y和Cd共掺杂的ZnO纳米材料。X-射线衍射分析表明,样品为单一相的ZnO纤锌矿结构,随着掺杂量的增加,样品的晶粒尺寸减小。光学性能测试结果表明,样品具有较强的紫外发射峰和较弱的可见光发射峰,紫外发射峰强度随着掺杂量的增加而减弱并发生红移。     

Microstructure-related piezoelectric properties of a ZnO film grown on a Si substrate

We investigated the effect of grain size on the piezoelectric properties of ZnO using films of different grain sizes and a fixed thickness of 800 nm deposited on a Si substrate by pulsed laser ablation in the temperature range of 300–700 °C. All of the deposited films have a crystal structure with a c-axis orientation. The grain size of the grown films, characterized by transmission electron microscopy (TEM), increases with the deposition temperature. In contrast, their piezoelectric efficiency (PE, d₃₃), characterized by piezoelectric force microscopy (PFM), was found to initially increase with the deposition temperature up to 500 °C, after which it decreased with further increases in temperature. The maximum PE value is observed for the film deposited at 500 °C with a grain size of approximately 60 nm. The peculiar PE behavior observed was theoretically explained by a competition between the contribution of the c-axis orientation favoring a larger d₃₃ value due to the enhanced static asymmetry and the strong grain size effect that influences the piezoelectric polarization as a result of domain motion.     

The evolution behavior of microstructures and optical properties of ZnO films using a Ti buffer layer

ZnO thin films without and with Ti buffer layer were prepared on Si and glass substrates by radio frequency (RF) magnetron sputtering. The effects of Ti buffer layer with different sputtering time on the microstructure and optical properties of ZnO thin films had been investigated by means of X-ray diffraction (XRD), energy dispersive spectrometer, X-fluorescence spectrophotometer and ultraviolet–visible spectrophotometer. The XRD results showed that the full-width at half-maximum (FWHM) for the ZnO (002) diffraction peak gradually decreased with the increase of sputtering time of Ti buffer layer, indicating that the crystalline quality of ZnO thin films was improved. The UV peak located at 390 nm, two blue peaks located at about 435 and 487 nm, two green peaks located at about 525 and 560 nm were observed from PL spectra. The PL spectra showed that the strongest blue light emission of ZnO films was obtained from Ti buffer layer with the sputtering time of 10 min. Meanwhile, the origins of the emission peaks were discussed through the Gaussian deconvolution. We also studied the optical band gaps.     

Effect of nanowires in microporous structures on the thermoelectric properties of oxidized Sb-doped ZnO film

Sb-doped ZnO thermoelectric films with microporous structures are fabricated by oxidizing evaporated Zn-Sb thin films in a leaf-like surface. High magnetic field (HMF) and Sb are employed to tune the formation of nanowires and nanorods in the microporous films and conduction type. Nanowire is formed in the film with Sb content of 3.0% and nanorod is formed with 4.6% Sb with the absence of HMF. P-type ZnO films with a wuterzite are formed. The resistivity of the films decreases by two orders of magnitude by increasing Sb content. The resistivity of films decreases 45% and 80% by forming nanowires and nanorods, respectively. The power factor of the nanorod structures increases by two orders of magnitude by comparison with others and reaches to 52.6 μW/m?K². This indicates that the nanorod structures with a higher Sb content are easy to obtain stable p-type semiconductor with a higher power factor.     

ZnO薄膜材料的缺陷和光谱特性

ZnO是一种新型的Ⅱ-Ⅵ族半导体材料,具有许多优异的性能,可望成为新一代光电材料。但ZnO薄膜中存在各种缺陷,它们是制约ZnO发光性能的一个关键因素。本文在查阅文献的基础上,总结了ZnO薄膜材料中可能存在的缺陷和发光谱特性,并就缺陷对发光性能影响的研究现状做了综合评述。     

SnO2/ZnO复合中空纤维材料的制备及其光催化性能

采用天然棉花为模板制备了具有高光催化活性的SnO2/ZnO复合中空纤维光催化材料;利用X-射线衍射(XRD)、扫描电子显微镜(SEM)技术对其相结构和形貌进行了表征;以亚甲基蓝(MB)的脱色降解为模型反应,考察了Sn4+和Zn2+物质的量比为0.1∶1时煅烧温度对其催化性能的影响。实验结果表明:制备的样品为复制了棉花纤维模板形貌、具有中空结构的SnO2和ZnO半导体复合材料(SnO2/ZnO);煅烧温度对材料SnO2/ZnO的结晶度、晶粒大小﹑表面微结构和催化性能等有显著影响;650℃左右所得样品在太阳光下的催化活性最好,1 h可使MB溶液的脱色降解率达100%;该材料易于离心分离,具有良好的催化活性和重复使用性能。