夹层压电复合材料的研究

使用碳黑／Ｐ（ＶＤＦ－ＴＦＥ）导电复合材料与０－３型ＰＺＴ／Ｐ（ＶＤＦ－ＴＦＥ）压电复合材料进行二次结构复合,形成夹层压电复合材料,对其压电性能进行了分析测试。研究结果表明,夹层压电复合材料的压电系数（ｄ３３、ｄ３１）比原单层０－３型ＰＺＴ／Ｐ（ＶＤＦ－ＴＦＥ）压电复合材料有明显提高。此外,从理论上分析说明了其压电系数提高的原因在于夹层压电复合材料受到外部应力作用时,产生了内部应力。     

透射电镜观察实验性心肌缺血再灌注时超微结构改变以及硝苯吡啶（心痛定）的保护作用

本文建立家兔心肌缺血再灌注模型，用透射电镜观察心肌细胞超微结构的变化以及应用硝苯吡啶（心痛定）的影响，结果对照组显示超微结构明显破坏，尤其是线粒体和细胞膜系统破坏严重。而用药组心肌细胞改变轻微，表明钙拮抗药能减轻心肌缺血再灌注时细胞超微结构的损伤。     

国产A/D(模/数)、D/A/(数/模)转换器失效模式和失效机理研究

国产Ａ／Ｄ（模／数）、Ｄ／Ａ（数／模）转换器是重点电子产品,属大规模集成电路。我国军用和重点工程对Ａ／Ｄ、Ｄ／Ａ的需求很大,而目前高位数和高精度的该类产品主要仍靠进口。本文通过研究其失效模式和失效机理,可暴露存在问题,总结经验教训,寻找改进措施,促进该类产品研制与生产水平的提高,以利于国产Ａ／Ｄ、Ｄ／Ａ的进一步开发和发展。     

基于CSE／MA的多Agent协同环境的设计

多ａｇｅｎｔ协同环境与客户／服务器模式的分布计算环境的融合是必要且有益的．本文首先提出了一种ａｇｅｎｔ互操作语言ＡＣＯＬ，该语言在ＫＱＭＬ语言的基础上增加了＂共享组＂、＂私有组＂、＂组信号量＂等概念及相应语言成分，然后，提出了一种在基于集成中间件ＣＳＥ／ＭＡ上实现Ａ－ＣＯＬ以建立多ａｇｅｎｔ协同环境的方案．     

高Q Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用

叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。     

P~＋－Ge_（0．3）Si_（0．7）／P－Si异质结内光发射红外探测器77K的特性

首次报导了一种改进结构的Ｐ＋—Ｇｅ０．３Ｓｉ０．７／Ｐ—Ｓｉ异质结内光发射长波长红外探测器在７７Ｋ下的电学特性和光学响应特性。     

宽带ISDN与ATM交换技术 第四讲 B－ISDN中的业务量控制

本文介绍了Ｂ－ＩＳＤＮ中业务量控制的原理和方法，讨论了连接／呼叫接纳控制（ＣＡＣ）和用法／网络参数控制（ＵＰＣ／ＮＰＣ）两个最基本的业务量控制功能，并对网络拥塞控制、业务量成形、优先级控制和快速资源管理等附加的控制功能作了简要的叙述。     

干线系统C／CTB,C／CSO计算及其与频道数的关系

本文说明干线系统如何实际计算Ｃ／ＣＴＢ和Ｃ／ＣＳＯ，认为Ｃ／ＣＴＢ与传输频道数的关系不同于Ｃ／ＣＳＯ与传输频道数的关系，即Δ（Ｃ／ＣＴＢ）≈－２０ｌｇ（实传频道数／额定频道数）３／２，Δ（Ｃ／ＣＳＯ）＝－２０ｌｇ（实传频道数／额定频道数）。     

由相同元件组成的顺序k／n（F）系统可靠性的计算方法

给出了当由ｉ．ｉ．ｄ．元件组成系统的情况下，普通型线状环状顺序ｋ／ｎ（Ｆ）系统和特殊型线状／环状顺序ｋ／ｎ（Ｆ）系统的计算公式。方法简单、实用。     

Au/BIT/PZT/BIT/p-Si(100)存储器

利用准分子激光原位淀积方法制备了BIT／PZT／BIT，PZT／BIT和BIT层状铁电薄膜，获得了电流密度－电压（I－V）回线和极化强度P－V电滞回线。在这三种结构中，Au/BIT/PZT/BIT/p-Si(100）结构的界面电位降、内建电压及频率效应是最小的。在电压转变电VT、饱和极化强度Ps及矫顽场Vc之间有三种关系，他们与I－V回线及P－V回线的关系相匹配，这种匹配关系使得以I－V回线操作的存储器将能够非挥发和非破坏读出及具有保持力。     

GeSi/Si共振隧穿二极管

GeSi/Si共振隧穿二极管主要包括空穴型GeSi/SiRTD、应力型GeSi/SiRTD和GeSi/Si带间共振隧穿二极管三种结构。着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。     

Temperature-sensitive nanocapsules for methane storage

A nanocapsule is investigated for methane storage purposes. The nanocapsule is a dasiabucky shuttledasia (or a nanopeapod) with a hole in its structure. The bucky shuttle has a diameter of a nanotube (10, 10) and is 180dasiaAdasia in length. A K@C₆₀ ¹⁺ endohedral complex is encapsulated into the nanocapsule. Simulations are performed by a molecular dynamics method. The internal dynamics of the system are investigated - the nanocapsule, the K-C₆₀ ¹⁺ endohedral complex and methane molecules. The closing of the nanocapsule can be induced by the K@C₆₀ ¹⁺ ion transition as a result of applying an electric field. There is no need to keep the electric field at the storage stage, because the K@C₆₀ ¹⁺ ion cannot overcome the hole area owing to the effect of forces created in the hole of the nanocapsule. The opening of the nanocapsule takes place under the heating of the system. It is shown that this is a temperature-sensitive nanocapsule for methane molecule storage under zero external pressure and a temperature of 300 K. The nanocapsule retains 71 methane molecules (3.06 mass ) and releases gas at 350 K.     

Target limitation of resolution and signal/noise in mesh storage tubes

By assuming that the mesh holes are square and that the electron beams are Gaussian, both the sine-wave and the cross-scan response may be calculated for a mesh-type storage tube. The sine-wave response is the product of a function of the formsin x/x. from the mesh holes and a Gaussian function from the electron beams. Cross-scan response always exceeds sine-wave response; the resolution at 50 percent cross-scan response is 5/3 times the resolution at 50 percent sine-wave response. The signal current through a mesh hole is directly proportional to the area of the hole. Variations in mesh hole size from point-to-point on the mesh produce errors or disturbance on the output signal. For example, a peak-to-peak signal to peak-to-peak disturbance ratio of 20 dB requires that the variation in mesh hole width be ± 2.5 percent. The disturbance may be observed in the output of an electrical-output mesh storage tube by photographing 50 to 100 superimposed traces from a line-selector oscilloscope display.     

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 /spl mu/m/sup 2/ is fabricated based on 0.13-/spl mu/m technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V/sub t/ in erase while programming is done by lowering a local V/sub t/ through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.     

Effects of the p-AlInGaN/GaN superlattices’structure on the performance of blue LEDs

The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons＇ overflow between multiple quantum-wells （MQWs） and EBL.     

频域光存储偏振极化成孔动力学的研究

报道用偏振光谱对频域存储有机材料ＴＨＰ／ＰＭＭＡ进行持久性光谱烧孔，获得了一般方法难以得到的４００％以上孔深的各向异性孔。着重讨论固体偏振光谱烧孔理论及快速成孔机理，并在实验上观察到各向异性成孔动力学过程，理论和实验上得到很好的拟合。展示了偏振光谱烧孔技术在频域光存储和固体高分辨光谱应用的良好前景。     

Dopant interdiffusion effects in n-i-p structured spiro-OMeTAD hole transport layer of organometal halide perovskite solar cells

In this work we performed dopant diffusion experiments on the hole transport material spiro-OMeTAD. Pure spiro-OMeTAD/F4-TCNQ doped spiro-OMeTAD and pure spiro-OMeTAD/DMC doped spiro-OMeTAD thin films were deposited on Au/Si(100) substrates. The energy levels, chemical states, and surface morphologies of formed films were studied by ultraviolet photoemission spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy as a function of the storage time in ultrahigh vacuum. We found only the pure spiro-OMeTAD/DMC doped spiro-OMeTAD film showed the n-type doping with the Fermi level of the film shifting away from the HOMO edge by 0.3 eV after 36 h. We propose that the diffusion of DMC dopant leads to the increase of the efficiencies of perovskite solar cell with the pin-hole free n-i-p structured hole transport layer several days after fabrication.     

一种具有载流子存储层的500 V高速SOI-LIGBT

为了改善LIGBT的关断特性,已有一种采用PMOS管来控制LIGBT阳极空穴注入的方法。在此基础上,提出了一种具有载流子存储效应的高速SOI-LIGBT结构。采用二维仿真软件MEDICI,对器件P-top区的剂量、载流子存储层的长度、掺杂浓度等参数进行优化设计。结果表明,SOI-LIGBT的击穿电压为553 V,正向压降为1.73 V。关断时,引入的PMOS管可以阻止LIGBT阳极向漂移区注入空穴,使器件的关断时间下降到13 ns,相比传统结构下降了87.6%。     

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

The negative threshold voltage (V/sub t/) shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this V/sub t/ shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced V/sub t/ shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative V/sub t/ drift is proposed.     

新型芴-咔唑共聚物电致发光性质的研究

研究了一种新型的芴与咔唑交替共聚合物材料的电致发光(EL)特性,制备了2种不同结构的器件,分别为indium-tin-oxide(ITO)/polymer/tris-(8-hydroxyquinoline)-alumium(Alq3)/Mg:Ag和ITO/polymer/bathocuproine(BCP)/Alq3/Mg:Ag.实验结果表明;前者发射绿色光,为Alq3的本征发光,聚合物起空穴传输层(HTL)的作用;后者发射蓝色光,EL谱与聚合物材料的光致发光(PL)谱一致,说明这种共聚物除了可用做空穴传输材料外,本身亦可做为优良的OLED蓝色发光材料.