Texture effect on the electrochemical properties of LiCoO2 thin films prepared by PLD

LiCoO₂ thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO₂/Si (Pt) and Au/MgO/Si (Au) substrates, respectively. Crystal structures and surface morphologies of thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The LiCoO₂ thin films deposited on the Pt substrates exhibited a preferred (0 0 3) texture with smooth surfaces while the LiCoO₂ thin films deposited on the Au substrates exhibited a preferred (1 0 4) texture with rough surfaces. The electrochemical properties of the LiCoO₂ films with different textures were compared with charge-discharge, dQ/dV, and Li diffusion measurements (PITT). Compared with the (1 0 4)-textured LiCoO₂ thin films, the (0 0 3)-textured thin films exhibited relatively lower electrochemical activity. However, the advantage of the (1 0 4)-textured film only remained for a small number of cycles due to the relatively faster capacity fade. Li diffusion measurements showed that the Li diffusivity in the (0 0 3)-textured film is one order of magnitude lower than that in the (1 0 4)-textured film. As discussed in this paper, we believe that Li diffusion through grain boundaries is comparable to or even faster than Li diffusion through the grains.     

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb_0.90Ca_0.10TiO₃ (PCT10) thin films deposited using La_0.50Sr_0.50CoO₃ (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO₆ octahedron unit due to the reduction of lattice parameters. Remnant polarization (P_r) values are about 30 μC/cm² and 12 μC/cm² for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films.     

The effect of Bi2O3 compensation during thermal treatment on the crystalline and electrical characteristics of bismuth titanate thin films

Bismuth titanate thin films are deposited on ITO/glass substrates by rf magnetron sputtering at room temperature using a Bi₄Ti₃O₁₂ ceramic target. The deposited Bi₄Ti₃O₁₂ films are annealed in a conventional furnace in ambient air for 10 min at temperatures ranging from 550 to 640 °C. One specimen is annealed in a crucible containing additional Bi₂O₃ compensation powder, while the other specimen is annealed in ambient air. XRD analysis shows that the crystal phases of films annealed with Bi₂O₃ powder are better than those of films annealed without Bi₂O₃ powder. Furthermore, the EDS results reveal that the bismuth weight percentage of the former is higher than that of the latter. SIMS analysis shows that the bismuth decreases near the surface of Bi₄Ti₃O₁₂ film annealed without Bi₂O₃ powder, but reveals a stable distribution throughout the film annealed with Bi₂O₃ powder. These results imply that bismuth is readily evaporated during the thermal treatment process, particularly from the region near the film surface. Finally, the dielectric and polarization properties of the thin films annealed with Bi₂O₃ powder are found to be superior to those of the films annealed in ambient air.     

As-deposited LiCoO2 thin film cathodes prepared by rf magnetron sputtering

LiCoO₂ thin films were deposited using radio frequency (rf) magnetron sputtering system on stainless steel substrates. Different rf powers, up to 150 W, were applied during deposition. The as-deposited films exhibited (1 0 1) and (1 0 4) preferred orientation and the nanocrystalline film structure was enhanced with increasing rf power. The film crystallinity was examined using X-ray diffraction, Raman scattering spectroscopy and transmission electron microscopy. The compositions of the films were determined by inductively coupled plasma-mass spectroscopy. The average discharge capacity of as-deposited films is about 59 μAh/(cm² μm) for cut-off voltage range of 4.2 and 3.0 V. From the electrochemical cycling data, it is suggested that as-deposited LiCoO₂ films with a nanocrystalline structure and a favorable preferred orientation, e.g. (1 0 1) or (1 0 4) texture, can be used without post-annealing at high temperatures for solid-state thin film batteries.     

Sintering of glass-added BaZn1/3Nb2/3O3 ceramics

The complex perovskite oxide Ba(Zn_1/3Nb_2/3)O₃ (BZN) has been studied for its attractive dielectric properties which place this material interesting for applications as multilayer ceramics capacitors or hyperfrequency resonators. This material is sinterable at low temperature with combined glass phase–lithium salt additions, and exhibits, at 1 MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 2 wt.% of ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of LiF-added BZN sample sintered at 900 °C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?_r of 39, low dielectrics losses (tan(δ) < 10⁻³) and a temperature coefficient of permittivity τ_? of 45 ppm/°C⁻¹. The 2 wt.% ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of B₂O₃-added BZN sintered at 930 °C exhibits also attractive dielectric properties (?_r = 38, tan(δ) < 10⁻³) and it is more interesting in terms of temperature coefficient of the permittivity (τ_? = −5 ppm/°C). Their good dielectric properties and their compatibility with Ag electrodes, make these ceramics suitable for L.T.C.C applications.     

Investigation of Tb-doping on structural transition and multiferroic properties of BiFeO3 thin films

Pure BiFeO₃ (BFO) and Bi_1−xTb_xFeO₃ (BTFO) thin films were successfully prepared on FTO (fluorine doped tin oxide) substrates by the sol–gel spin-coating method. The effects of Tb-doping on the structural transition, leakage current, and dielectric and multiferroic properties of the BTFO thin films have been investigated systematically. XRD, Rietveld refinement and Raman spectroscopy results clearly reveal that a structural transition occurs from the rhombohedral (R3c:H) to the biphasic structure (R3c:H+R-3m:R) with Tb-doping. The leakage current density of BTFO_x=0.10 thin film is two orders lower than that of the pure BFO, i.e. 5.1×10⁻⁷ A/cm² at 100 kV/cm. Furthermore, the electrical conduction mechanism of the BTFO thin films is dominated by space-charge-limited conduction. The two-phase coexistence of BTFO_x=0.10 gives rise to the superior ferroelectric (2P_r=135.1 μC/cm²) and the enhanced ferromagnetic properties (M_s=6.3 emu/cm³). The optimal performance of the BTFO thin films is mainly attributed to the biphasic structure and the distorted deformation of FeO₆ octahedra.     

Properties of nano-crystalline LiMn2O4 thin films deposited by pulsed laser deposition

Properties of LiMn₂O₄ thin films deposited on polished stainless steel substrates at 400 °C and 200 mTorr of oxygen by pulsed laser deposition have been characterized by electrochemical measurements and physical analyses. The film was mainly composed of nano-crystals less than 100 nm. A maximum specific capacity of 141.9 mAh/g cycled between 3.0 and 4.5 V with a current density of 20 μAh/cm² has been achieved. The film exhibited an excellent cycling stability up to 500 cycles. The low charge-transfer resistance at high potentials as revealed by AC impedance resulted in high charge/discharge potential and more capacity. The effect of overdischarge was limited and Jahn-Teller effect was overcome to a significant extent in this nano-crystalline film. Ex situ XRD, Raman and XPS provided supporting evidence in the changes in structure, reactivity and cycling stability of nano-crystalline LiMn₂O₄ film cathodes under different charge/discharge states and cycling tests. SEM images also revealed the stability of the surface topography after a long-term cycling test.     

Dielectric,ferroelectric properties and photoconductivity effect of sol-gel grown SrTiO3/BaTiO3 thin film heterostructure

SrTiO₃/BaTiO₃ (ST/BT) thin-film heterostructure was deposited on Pt/Ti/SiO₂/Si(100) substrate by spin-coating. X-ray diffraction pattern shows that the heterostructure is a perovskite structure composed of ST and BT without any impurity peaks. The dielectric constant and loss of the heterostructure at 10?kHz are 704 and 0.024, respectively. The electric-field dependence of dielectric response was investigated and the tunability of the sample under 200?kV/cm applied field is 21.5%. Compared with pure ST thin film, the polarization-electric field loops of ST/BT heterostructure display high polarization and good symmetry, which could be attributed to the introduction of BT with high dielectric constant and inhibition of the potential pitfalls movement for high barrier at ST/BT interface. Moreover, the heterostructure demonstrates photoconductivity behavior with 405?nm light illumination. The results indicate that ST/BT heterostructure is a potential material in application as multifunctional photoelectric devices.     

Synthesis and characterization of highly stable optically passive CeO2-ZrO2 counter electrode

Transparent and adherent CeO₂-ZrO₂ thin films having film thicknesses ∼543-598 nm were spray deposited onto the conducting (fluorine doped tin oxide coated glass) substrates from a blend of equimolar concentrations of cerium nitrate hexahydrate and zirconium nitrate having different volumetric proportions (0-6 vol.% of Zr) in methanol. CeO₂-ZrO₂ films were polycrystalline with cubic fluorite crystal structure and the crystallinity was improved with increasing ZrO₂ content. Films were highly transparent (T ∼ 92%), showing decrease in band gap energy from 3.45 eV for pristine CeO₂ to 3.08-3.14 eV for CeO₂-ZrO₂ films. The different morphological features of the film obtained at various CeO₂-ZrO₂ compositions had pronounced effect on the ion storage capacity and electrochemical stability. CeO₂-ZrO₂ film prepared at 5 vol.% Zr concentration exhibited higher ion storage capacity of 24 mC cm⁻² and electrochemical stability of 10,000 cycles in 0.5 M LiClO₄ + PC electrolyte due to its film thickness (584 nm) coupled with relatively larger porosity (8%). The optically passive behavior of such CeO₂-ZrO₂ film (with 5 vol.% Zr) is affirmed by its negligible transmission modulation irrespective of repeated Li⁺ and electron insertion/extraction. The coloration efficiency of spray deposited WO₃ thin film is found to enhance from 47 to 107 cm² C⁻¹ when CeO₂-ZrO₂ is coupled as a counter electrode with WO₃ in an electrochromic device (ECD). These films can be used as stable ‘passive’ counter electrodes in electrochromic smart windows as they retain full transparency in both the oxidized and reduced states and ever-reported longevity.     

Composition-dependent characterization and optimal control of electrodeposited Bi2Te3 films for thermoelectric application

A method to control composition of Bi₂Te₃ films by mass transfer manipulation has been developed. The film composition can be varied by a diffusion-controlled method, which is related to the change of Bi³⁺/HTeO₂⁺ ratios in a controlled diffusion layer. A homogeneous and dense film with precise chemical composition could thus be obtained under constant electrode polarization. Meanwhile, the solo dependence of film properties on composition change of both Te-rich and Bi-rich films were investigated. Firstly, the studies of XRD and FE-SEM showed that different Te contents in deposit would lead to different dimensions of unit cell and grain sizes. The Seebeck coefficient increased apparently when the Te content was over 60 at.% Te. Te-rich films had higher carrier concentration but slower mobility than Bi-rich films. Inverse relations were observed between carrier concentration and carrier mobility and between Seebeck coefficient and conductivity. Therefore, an optimal power factor of 7 × 10⁻⁴ W/m K² was realized near the stoichiometric Bi₂Te₃.     

One-step electrochemical preparation of the ternary (BixSb1−x)2Te3 thin films on Au(1 1 1): Composition-dependent growth and characterization studies

This study reports on the synthesis of ternary semiconductor (Bi_xSb_1−x)₂Te₃ thin films on Au(1 1 1) using a practical electrochemical method, based on the simultaneous underpotential deposition (UPD) of Bi, Sb and Te from the same solution containing Bi³⁺, SbO⁺, and HTeO₂⁺ at a constant potential. The thin films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and reflection absorption-FTIR (RA-FTIR) to determine structural, morphological, compositional and optic properties. The ternary thin films of (Bi_xSb_1−x)₂Te₃ with various compositions (0.0 ≤ x ≤ 1.0) are highly crystalline and have a kinetically preferred orientation at (0 1 5) for hexagonal crystal structure. AFM images show uniform morphology with hexagonal-shaped crystals deposited over the entire gold substrate. The structure and composition analyses reveal that the thin films are pure phase with corresponding atomic ratios. The optical studies show that the band gap of (Bi_xSb_1−x)₂Te₃ thin films could be tuned from 0.17 eV to 0.29 eV as a function of composition.     

Electrochemical characterization of amorphous LiFe(WO4)2 thin films as positive electrodes for rechargeable lithium batteries

Amorphous LiFe(WO₄)₂ thin films have been fabricated by radio-frequency (R.F.) sputtering deposition at room temperature. The as-deposited and electrochemically cycled thin films are, respectively, characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectra techniques. An initial discharge capacity of 198 mAh/g in Li/LiFe(WO₄)₂ cells is obtained, and the electrochemical behavior is mostly preserved in the following cycling. These results identified the electrochemical reactivity of two redox couples, Fe³⁺/Fe²⁺ and W⁶⁺/W^x+ (x = 4 or 5). The kinetic parameters and chemical diffusion coefficients of Li intercalation/deintercalation are estimated by cyclic voltammetry and alternate-current (AC) impedance measurements. All-solid-state thin film lithium batteries with Li/LiPON/LiFe(WO₄)₂ layers are fabricated and show high capacity of 104 μAh/cm² μm in the first discharge. As-deposited LiFe(WO₄)₂ thin film is expected to be a promising positive electrode material for future rechargeable thin film batteries due to its large volumetric rate capacity, low-temperature fabrication and good electrode/electrolyte interface.     

LiCoO2 thin film cathode fabrication by rapid thermal annealing for micro power sources

The rapid thermal annealing (RTA) process was employed to obtain crystalline LiCoO₂ thin films. XRD analyses of the LiCoO₂ thin film show increased crystallinity with an increase in the RTA time. The Auger electron spectroscopic analysis of the LiCoO₂ film strongly suggests that the RTA process is more advantageous to obtain a stable inter layer between the substrate and the deposited film and between each deposited layer than the conventional annealing process. All-solid-state thin film cells composed of Li/lithium phosphorous oxynitride (Lipon)/LiCoO₂ systems were fabricated using the LiCoO₂ cathode treated with RTA. The optimum condition of RTA would be 900 s at 650 °C, which exhibited a good rate capability for high power applications. Two cells were connected in parallel to obtain a higher discharge current, and they showed a specific capacity of 38.4 μAh cm⁻² μm⁻¹ even at a 25C rate (current density: 7.96 mA cm⁻²).     

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Bismuth selenide thin films were grown on Pt substrate via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behaviors of Bi and Se on bare Pt, Se on Bi-covered Pt, and Bi on Se-covered Pt were studied by cyclic voltammetry and coulometry. A steady deposition of Bi₂Se₃ could be attained after negatively stepped adjusting of underpotential deposition (UPD) potentials of Bi and Se on Pt in the first 40 deposition cycles. X-ray diffraction (XRD) analysis indicated that the films were single phase Bi₂Se₃ compound with orthorhombic structure, and the 2:3 stoichiometric ratio of Bi to Se was verified by EDX quantitative analysis. The optical band gap of the as-deposited Bi₂Se₃ film was determined as 0.35 eV by Fourier transform infrared spectroscopy (FTIR), which is consistent with that of bulk Bi₂Se₃ compound.     

Li diffusion in LiNi0.5Mn0.5O2 thin film electrodes prepared by pulsed laser deposition

Kinetic and transport parameters of Li ion during its extraction/insertion into thin film LiNi_0.5Mn_0.5O₂ free of binder and conductive additive were provided in this work. LiNi_0.5Mn_0.5O₂ thin film electrodes were grown on Au substrates by pulsed laser deposition (PLD) and post-annealed. The annealed films exhibit a pure layered phase with a high degree of crystallinity. Surface morphology and thin film thickness were investigated by field emission scanning electron microscopy (FESEM). The charge/discharge behavior and rate capability of the thin film electrodes were investigated on Li/LiNi_0.5Mn_0.5O₂ cells at different current densities. The kinetics of Li diffusion in these thin film electrodes were investigated by cyclic voltammetry (CV) and galvanostatic intermittent titration technique (GITT). CV was measured between 2.5 and 4.5 V at different scan rates from 0.1 to 2 mV/s. The apparent chemical diffusion coefficients of Li in the thin film electrode were calculated to be 3.13 × 10⁻¹³ cm²/s for Li intercalation and 7.44 × 10⁻¹⁴ cm²/s for Li deintercalation. The chemical diffusion coefficients of Li in the thin film electrode were determined to be in the range of 10⁻¹²-10⁻¹⁶ cm²/s at different cell potentials by GITT. It is found that the Li diffusivity is highly dependent on the cell potential.     

The influence of preparation conditions on electrochemical properties of LiNi0.5Mn1.5O4 thin film electrodes by PLD

LiNi_0.5Mn_1.5O₄ thin films were prepared by pulsed laser deposition (PLD) on stainless steel substrates. The growth of the films has been studied as a function of substrate temperature and oxygen partial pressure in deposition, using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). Electrochemical properties of LiNi_0.5Mn_1.5O₄ thin film cathodes were investigated using cyclic voltammetry and galvanostatic charge/discharge against a lithium anode. The initial capacity and capacity retention of the films are highly dependent on the crystallinity and purity of the films. LiNi_0.5Mn_1.5O₄ thin films grown at 600 °C in an oxygen partial pressure of 200 mTorr are well crystallized with high purity, exhibiting excellent capacity retention between 3 and 5 V with a LiPF₆-based electrolyte.     

Structural and electrical properties of LaNiO3 thin films grown on (1 0 0) and (0 0 1) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO₃ thin films were deposited on SrLaAlO₄ (1 0 0) and SrLaAlO₄ (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700 °C in tube oven. Structural, morphological, and electrical properties of the LaNiO₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO₃ thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO₃ grown onto (1 0 0) and (0 0 1) oriented SrLaAlO₄ single crystal substrates reveled average grain size by AFM approximately 15–30 nm and 20–35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

Cyclic durable high-capacity Sn/Cu6Sn5 composite thin film anodes for lithium ion batteries prepared by electron-beam evaporation deposition

Sn/Cu₆Sn₅ alloy composite thin films were directly prepared by electron-beam deposition for anodes of lithium ion batteries. The thin film was comprised of micro/sub-microcrystalline Sn and Cu₆Sn₅, where the polyhedral micro-sized Sn grains were uniformly dispersed in the loose Cu₆Sn₅ matrix. Lithiation reaction kinetics were confirmed to be controlled by a diffusion step and the diffusion coefficient of Li⁺ in the thin film anode was determined to be 1.91 × 10⁻⁷ cm²/s. The galvanostatic cycling behavior of Sn/Cu₆Sn₅ composite thin film anodes was studied under different conditions. Stable capacities of more than 370 mAh/g were obtained by discharging from 1.25 to 0.1 V. Structure changes and fading mechanism of the thin film electrodes was discussed based on SEM, XRD and EDX investigations. The present results demonstrated that the multi-phase composite structure can improve electrochemical performance of the Cu-Sn alloy thin film electrodes.     

Giant dielectric permittivity and non-linear electrical behavior in CaCu3Ti4O12 varistors from the molten-salt synthesized powder

CaCu₃Ti₄O₁₂ (CCTO) powder has been prepared by a molten salt method using the NaCl–KCl mixture. Crystal structure and microstructure of the powder and the resulting ceramics have been characterized by using X-ray diffraction (XRD) and scanning electron microcopy (SEM). Impedance analyzer and current–voltage meter were employed to analyze dielectric and nonlinear (I–V) properties of the CCTO ceramics with different sintering durations and subsequent cooling rates. The values of dielectric permittivity and nonlinear coefficient of the quenched sample were found to be higher than those of the slowly cooled sample. More specifically, the cooling methods (quenching and furnace-cooling) have allowed to adjust; (?) the breakdown voltage within a rather low range of 0.3–4.4 kV cm⁻¹; (??) the nonlinear coefficient between 2 and 6 and (???) the giant dielectric permittivity for the ceramics within a range from 5000 to 20000. A double Schottky barrier can be evidenced from the linear behavior between the ln J and E^1/2 in grain boundary regions. The relationship between the electrical current density and the applied electrical field indicates that the potential barrier height Φ_B is holding time dependent.