溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

吲哚方酸菁半导体在场效应晶体管中的应用

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质, 通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式, 并在Si/SiO₂基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件. 通过对器件性能与沟道形态的研究, 我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变, 从而使薄膜晶体管的迁移率从10^-5 cm²?V^-1?s^-1量级提高到10^-3 cm²?V^-1?s^-1量级. 顶接触结构单晶器件获得了7.8×10^-2 cm²?V^-1?s^-1的迁移率. 未封装的方酸菁晶体管在大气中也表现出较好的稳定性.     

阴离子为羧酸根和芳环共轭的离子液体在染料敏化太阳能电池中的应用

提出了利用p-π共轭效应设计离子液体的方法, p-π共轭效应可以有效分散阴离子的负电荷, 降低离子液体中阴阳离子之间的库仑引力, 以得到低粘度的离子液体. 所设计的离子液体为1-乙基-3-甲基咪唑苯甲酸(EMIB)和1-乙基-3-甲基咪唑异烟酸(EMIIN) (它们的阴离子中羧酸根和芳环为p-π共轭结构), 这两种离子液体都达到了较低的粘度(EMIB为42 mPa·s, EMIIN为27 mPa·s). 进一步将这两种离子液体做成电解质, 应用在染料敏化太阳能电池中, 通过优化电解质的组成, EMIB基电解质达到了1.43 mS·cm^-1的电导率和1.45×10^-7cm²·s^-1的I₃^?的扩散系数, 而EMIIN基电解质的电导率和I₃^?扩散系数分别为1.63 mS·cm^-1和2.01×10^-7 cm²·s^-1,后者电导性能的提高主要和EMIIN粘度较低有关系. 进一步将这两种电解质组装成电池, 在300 W·m^-2的光强下测得EMIB基电池和EMIIN基电池的效率分别为2.85%和4.30%.     

C2(X1Σg+)自由基与不饱和碳氢化合物反应的温度效应

运用脉冲激光光解-激光诱导荧光(PLP-LIF)的方法在293-573 K的温度范围内测量了C₂(X¹Σ_g⁺)自由基与不饱和碳氢化合物(C₂H₄和C₂H₂)气相反应的双分子反应速率常数. 获得的速率常数可以用Arrhenius 公式表达如下(单位: cm³·molecule^-1·s^-1): k(C₂H₄)=(1.16±0.10)×10^-10exp[(290.68±9.72)/T], k(C₂H₂)=(1.36±0.02)×10^-10exp[(263.85±7.60)/T], 误差为2σ. 由获得的双分子反应速率常数及其所呈现的负温度效应, 我们认为在293-573 K温度范围内C₂(X¹Σ_g⁺)自由基和不饱和碳氢化合物的反应遵循加成机理.     

尿素作为造孔剂对聚乙烯支撑的PAMS聚合物电解质性能的改进

采用乳液聚合法合成聚(丙烯腈-甲基丙烯酸甲酯-苯乙烯) (P(AN-MMA-ST)或者共聚物PAMS), 并利用尿素作为造孔剂制备了聚乙烯(PE)支撑的PAMS聚合物膜(PE-PAMS-U)及凝胶聚合物电解质(GPE). 利用傅里叶变换红外(FTIR)光谱、X射线衍射(XRD)、扫描电子显微镜(SEM)、热重(TG)分析、线性电位扫描(LSV)、电化学阻抗谱(EIS)以及充放电等方法对PAMS聚合物以及PE支撑的聚(丙烯腈-甲基丙烯酸甲酯-苯乙烯) (PE-PAMS)聚合物隔膜及凝胶聚合物电解质的性能进行了研究. 结果表明, 利用尿素作为造孔剂可以提高PE-PAMS凝胶聚合物的性能. 由于尿素的加入, 聚合物膜呈现均匀的微孔结构, 室温下的电导率从1.1×10^-3 S·cm^-1提高到2.15×10^-3 S·cm^-1. 同时, 锂电极/聚合物电解质界面上的电荷传递电阻也从480 Ω·cm²降低到 250 Ω·cm². 电化学稳定窗口为5.0 V. 电池(Li/PE支撑的GPE/LiCoO₂)的测试证明, 用尿素作为造孔剂的凝胶聚合物锂离子电池表现出优良的倍率性能和循环性能.     

脉冲辐解研究吩噻嗪与CCl3OO·、·OH的反应

采用纳秒级脉冲辐解技术研究了吩噻嗪与CCl₃OO^·、^·OH的反应, 提出了相应的反应机理, 得到了相关的反应速率常数. 研究结果表明: 吩噻嗪与CCl₃OO^·、^·OH反应得到的瞬态产物的最大吸收峰都位于380 nm左右, 该吸收峰归属于CCl₃OO^·、^·OH夺取吩噻嗪氮原子上的氢而产生的吩噻嗪氮自由基. 吩噻嗪与CCl₃OO^·、^·OH反应的速率常数分别为1.1×10⁹和4.0×10⁹ L·mol^-1·s^-1. 这些结果将为进一步研究吩噻嗪的抗氧化活性提供理论基础.     

高结晶度方酸菁染料全溶液制备平面异质结有机太阳能电池

高结晶度有机半导体材料由于分子紧密堆叠,电荷迁移率高,但其在普通有机溶剂中溶解度低,溶液可加工性较差,限制了其在有机光电产品中的应用。本文设计合成了一种甲基修饰的高结晶度方酸菁类染料(DM-SQ),利用三氟乙酸溶剂溶液涂布制备DM-SQ薄膜。研究发现溶液制备的DM-SQ薄膜结晶度高,与真空沉积的DM-SQ薄膜比较,空穴迁移率更高(5.28×10_^-4 vs. 7.53×10_^-5 cm_² v_^-1 s_^-1)。以DM-SQ作为给体,PC₆₁BM作为受体,制备了平面异质结太阳能电池。溶液法制备的器件平均能量转换效率明显高于真空沉积器件(6.08±0.19％和3.56±0.22％)。     

侧链型磺化聚芳醚酮/磺化聚乙烯醇复合型直接甲醇燃料电池用质子交换膜

通过溶液共混法制备了不同磺化聚乙烯醇(SPVA)含量的侧链型磺化聚芳醚酮/磺化聚乙烯醇(S-SPAEK/SPVA)复合膜. 应用红外光谱(FTIR)对复合膜进行了表征, 扫描电镜(SEM)显示SPVA均匀分布在复合膜中. 通过对复合膜的性能测试发现该系列复合膜具有良好的热性能、较高的吸水率和保水能力. SPVA中的羟基能有效地阻碍甲醇的透过, 甲醇渗透系数从S-SPAEK/SPVA5 复合膜的7.9×10^-7 cm²·s^-1降低到S-SPAEK/SPVA30的1.3×10^-7 cm²·s^-1, 比S-SPAEK膜的11.5×10^-7 cm²·s^-1降低了一个数量级. SPVA的引入增加了亲水基团数量, 增加了复合膜的吸水和保水能力, 有利于质子按照“Vehicle”机理和“Grotthuss”机理进行传递, 柔软的SPVA链段与S-SPAEK侧链聚集成亲水相区, 形成连续的质子传输通道, 提高了复合膜的质子传导率. 在25 和80℃ 时, S-SPAEK/SPVA30 复合膜的质子传导率分别达到了0.071 和0.095 S·cm^-1. 可见,S-SPAEK/SPVA复合膜有望在直接甲醇燃料电池中得到应用.     

具有双孔径分布的介孔C-Al2O3-TiO2纳米复合材料的合成及其红外发射率

以嵌段共聚物F127 (PEO₁₀₆PPO₇₀PEO₁₀₆, M_W=12600)为模板剂, 异丙醇铝和钛酸四丁酯为金属源, 低分子量的酚醛树脂为碳源, 通过溶胶-凝胶三元共组装法合成了具有双孔径分布的C-Al₂O₃-TiO₂纳米复合材料.用X射线衍射(XRD)、透射电子显微镜(TEM)、扫描电子显微镜(SEM)及N₂吸附-脱附对该复合材料进行结构表征. 结果显示, 当铝钛原子的摩尔比为1:10 时, 对应的纳米复合材料具有较好的有序介孔结构, 其双孔径分别为3.9和6.5 nm, 比表面积可达259 m²·g^-1, 孔容0.37 cm³·g^-1. 以三元乙丙橡胶(EPDM)为粘结剂, 与介孔纳米复合材料混合制备涂层. 通过调节复合材料中铝钛摩尔比和涂层厚度, 红外发射率在0.450-0.617之间可调.     

Sb掺杂ZTO透明导电薄膜的结构和性能

采用溶胶凝胶法和旋涂法制备Sb掺杂钙钛矿结构ZTO（ZnSnO₃）透明电薄膜,并借助XRD、SEM、XPS、UV-Vis和Hall效应测试等手段研究了其结构和性能。比较了Sb离子单独置换ZnSnO₃晶体中的Zn²⁺或Sn⁴⁺,以及同时置换Zn²⁺和Sn⁴⁺等3种置换方式所得薄膜的结晶状态,分析了不同置换方式形成的薄膜中Sb离子实际占有的晶格位置,以及Sb⁵⁺与Sb³⁺的比例变化。探讨了不同置换方式晶体中氧空位（V_O^..）、锌间隙（Zn_i^..）和锡离子变价（Sn_Sn"）等结构缺陷相应的含量变化,并研究Sb离子掺杂浓度对薄膜晶体结构、结构缺陷和电阻率的影响。研究表明,3种置换方式的Sb掺杂ZTO薄膜均保持单一ZnSnO₃晶相,并且Sb离子均按设计的方案进入了相应的晶格位置,但不同置换方式的薄膜中,Sb⁵⁺与Sb³⁺的比例不同,并且会随Sb离子浓度增大而逐渐减小。研究证明Sb离子置换方式以及掺杂浓度均会显著影响薄膜中载流子的浓度和迁移率,从而影响其电性能。在所制备的薄膜中,Sb离子单独置换Zn²⁺且组成为Sb_0.15Zn_0.35Sn_0.5O_1.5的薄膜电阻率最低,为0.423 Ω·cm。此外,所有Sb掺杂ZTO薄膜在360~800 nm波长范围内透过率均在78%以上。     

Characterization of monolayer formation on aluminum-doped zinc oxide thin films

The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.     

紫外光照射对掺铝氧化锌薄膜导电和透光性质的影响

本文采用光助溶胶—凝胶法制备了掺铝氧化锌(AZO)透明导电薄膜.研究了紫外光照射对薄膜导电性和透光性质的影响.结果表明:光照使薄膜的导电性显著提高,且光照后薄膜方阻的降低幅度随薄膜晶粒尺寸的减小而逐渐增加;而随着紫外光照射时间延长,薄膜的紫外吸收边蓝移,近红外区透光率降低.以上实验现象可能与表面吸附氧解吸引起的载流子浓度增加、迁移率升高以及分层退火处理形成的薄膜结构有关.     

Evaluation of the structural,optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics

Aluminum doped zinc oxide (AZO) thin films for electrode applications were deposited on glass substrates using chemical bath deposition (CBD) method. The influence of deposition time on the structural, morphological, and opto-electrical properties of AZO films were investigated. Structural studies confirmed that all the deposited films were hexagonal wurtzite structure with polycrystalline nature and exhibited (002) preferential orientation. There is no other impurity phases were detected for different deposition time. Surface morphological images shows the spherically shaped grains are uniformly arranged on to the entire film surface. The EDS spectrum confirms the presence of Zn, O and Al elements in deposited AZO film. The observed optical transmittance is high (87%) in the visible region, and the calculated band gap value is 3.27 eV. In this study, the transmittance value is decreased with increasing deposition time. The room temperature PL spectrum exposed that AZO thin film deposited at (60 min) has good optical quality with less defect density. The minimum electrical resistivity and maximum carrier concentration values were observed as 8.53 × 10⁻³(Ω cm) and 3.53 × 10¹⁸ cm⁻³ for 60 min deposited film, respectively. The obtained figure of merit (ϕ) value 3.05 × 10⁻³(Ω/sq)^{- 1} is suggested for an optoelectronic device.     

Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of （002）. The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%（molar fraction）. Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%（molar fraction）.     

Influences of preferred orientation growth on electrical properties of ZnO:Al films by sol–gel method

Using different precursor preparation, heating methods, and initial layers, this work investigated the relation between the micro-structural and electrical properties of ZnO:Al (AZO) films prepared by sol–gel method on glass and silicon substrates. It was found that adding monoethanolamine (MEA), using initial layers, or an intentionally produced steep temperature gradient obviously promoted film growth along the (002) direction. However, the carrier mobility rose only a little while the carrier concentration was not affected or even reduced. Generally speaking, the film conductivity was not evidently improved. It could be concluded that all three methods are advantageous for enhancing the crystallographic quality and therefore the mobility of the AZO films, but the major reason for the poor conductivity of the sol–gel derived ZnO films was the low activation of the dopant, which is the key factor for further improvements and should be solved first.     

电沉积-退火工艺制备铜铟硒太阳能电池薄膜及表征

CuInSe₂ (CIS) films with good crystalline quality were synthesized by electrodeposition followed by annealing in Se vapor at 530 oC. The morphology, composition, crystal structure, optical and electrical properties of the CIS films were investigated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, UV-VIS-NIR spectroscopy, and admittance spectroscopy. The results revealed that the annealed CIS films had chalcopyrite structure and consisted of relatively large grains in the range of 500-1000 nm and single grain of films extend usually through the whole film thickness. The band gap of CIS films was 0.98 eV and carrier concentration was in the order of 10¹⁶ cm^-3 after etching the Cu-Se compounds on the film surface. Solar cells with the structure of AZO/i-ZnO/CdS/CIS/Mo/glass were fabricated. Current density vs. voltage test under standard reported condition showed the solar cells with an area of 0.2 cm² had a conversion efficiency of 0.96%. The underlying physics was also discussed.     

Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating method

In this study, we investigated the influences of gallium concentration and a rapid thermal annealing process on the electrical and optical properties of ZnO:Ga (GZO) films prepared by sol–gel method. Experimental data indicated that the preferential growth directions of ZnO crystallites were the (002) and (103) axes. This phenomenon implied that the nucleation and growth behaviors of ZnO crystallites were changed by the infrared heating procedure and monoethanolamine. Furthermore, since the deposited sol films were heated simultaneously, evenly, and rapidly, dopant material Ga got the opportunity to replace Zn instead of forming oxides embedded in grain boundary areas. Thus, carrier concentration of the GZO films can be considerably enhanced while the mobility of the GZO films was not apparently affected in our experiments. It was also found that the carrier concentration was not sensitive to Ga/Zn ratio even though higher Ga concentration led to lower mobility. The best sample with a resistivity of 2.20 × 10⁻³ Ω cm and a transmittance of over 80% in visible region was achieved with 1.0 at.% Ga.     

Structure and properties of single crystalline CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

Single crystals of CaMg(2)Bi(2), EuMg(2)Bi(2), and YbMg(2)Bi(2) were obtained from a Mg-Bi flux cooled to 650 °C. These materials crystallize in the CaAl(2)Si(2) structure-type (P ?3m1, No. 164), and crystal structures are reported from refinements of single crystal and powder X-ray diffraction data. EuMg(2)Bi(2) displays an antiferromagnetic transition near 7 K, which is observed via electrical resistivity, magnetization, and specific heat capacity measurements. Magnetization measurements on YbMg(2)Bi(2) reveal a weak diamagnetic moment consistent with divalent Yb. Despite charge-balanced empirical formulas, all three compounds are p-type conductors with Hall carrier concentrations of 2.0(3) × 10(19) cm(-3) for CaMg(2)Bi(2), 1.7(1) × 10(19) cm(-3) for EuMg(2)Bi(2), and 4.6(7) × 10(19) cm(-3) for YbMg(2)Bi(2), which are independent of temperature to 5 K. The electrical resistivity decreases with decreasing temperature and the resistivity ratios ρ(300 K)/ρ(10 K) ≤ 1.6 in all cases, indicating significant defect scattering.     

Rare earth Eu<Superscript>3+</Superscript> co-doped AZO thin films prepared by nebulizer spray pyrolysis technique for optoelectronics

Rare earth element (i.e.) europium co-doped aluminum zinc oxide (Eu:AZO) thin films were deposited on microscope glass slides by nebulizer spray pyrolysis with different Eu-doping concentrations (0, 0.5, 1, and 1.5%). The deposited films were investigated using X-ray diffraction, AFM, EDAX, FT-Raman, UV–visible, PL, and Hall effect measurements. X-ray confirmed the incorporation of aluminum and europium ions into the ZnO structure. All films have polycrystalline nature with hexagonal wurtzite structure at (002) direction. Topological depictions exhibited minimum surface roughness and low film thickness for pristine AZO thin film. EDAX study authorizes the existence of Zn, O, Al, and Eu in Eu: AZO thin films. Raman spectra exhibited the characteristic of ZnO-wurtzite structure (E₂-high) mode at 447?cm^?1. The deposited film showed high optical transmittance of ~90% in visible region, and the direct energy gap was around 3.30?eV for pristine AZO thin film. The PL spectra emitted a powerful UV emission situated at 388?nm, and it indicates that the film has good optical quality. The obtained large carrier concentration and less resistivity values are 4.42?×?10²¹?cm^?3 and 3.95?×?10^?4?Ω?cm, respectively, for 1.5% Eu-doped AZO thin film. The calculated figure of merit value is 17.29?×?10^?3 (Ω/sq)^?1, which is more suitable for the optoelectronic device.

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热处理气氛对α-Fe2O3光阳极光电化学性能影响研究

分别在空气和氮气中对水热制备的薄膜进行热处理获得了纳米棒状α-Fe₂O₃光阳极。对样品分别进行了X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)、紫外-可见吸收光谱和光电化学性能测试。与空气热处理获得的α-Fe₂O₃Air光阳极相比,氮气气氛热处理获得的α-Fe₂O₃光阳极正面光照电流密度显著提升达到0.42mA·cm^-2。正面光照下,α-Fe2O3N2光阳极的体内电荷分离效率ηbulk和表面电荷注入效率ηsurface都有较大增加,说明N2热处理明显增加了α-Fe₂O₃膜的载流子浓度,增强了体内载流子的传输和表面载流子注入效率。