电沉积Cu_（2x）In_（2－2x）Se_2薄膜的光电化学研究

用电沉积法制得Ｃｕ＿（２ｘ）Ｉｎ＿（２－２ｘ）Ｓｅ＿２（铜铟硒）（０＜ｘ＜１）薄膜￣［１］并用ＥＤＡＸ对其组成进行分析．对薄膜电极的光电化学性能、光谱响应、能隙与ｘ的依赖关系进行了研究．借助于现场微区扫描光电流谱观察了热处理、薄膜厚度、光极化对薄膜电极的光电性能影响．研究了Ｐｂ（ＮＯ＿３）＿２有效的浸渍对薄膜光电性能的影响．     

PZT薄膜的MOD制备及形成机理研究

采用金属有机物热分解（ＭＯＤ）工艺在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上制备锆钛酸铅（ＰＺＴ）薄膜。ＸＲＤ分析显示薄结晶状态良好,无焦绿石相存在。ＡＥＳ测量表明：薄膜成分沿膜厚均匀分布,膜中无碳存在,表面不富含铅。分析了薄膜的形成机理,安性地解释了晶粒的生长过程。     

光催化多孔TiO2薄膜的表面形貌对亲水性的影响

从含聚乙二醇（ＰＥＧ）的钛醇盐溶胶前驱体中通过溶胶－凝胶工艺在普通钠钙玻表面制备了多孔锐钛矿型ＴｉＯ２纳米薄膜。用扫描电镜（ＳＥＭ）,Ｘ射线光电子能谱（ＸＰＳ）和红外光谱（ＩＲ）分析了ＴｉＯ２薄膜表面的微结构,结果表明,随着前驱物中聚乙二醇的加入量和分子量的增加,聚乙二醇热分解后的薄膜中产生的气孔就越多且孔径越大,同时ＴｉＯ２薄膜表面的羟基含量增加且表面粗糙度增大。接触角测试表明：随着薄膜中气孔数     

浅色云母导电颜料制备工艺研究

用化学共沉积方法在微细云母基片上包覆一层ＳｎＯ＿２－Ｓｂ＿２Ｏ＿３半导体化合物，经煅烧制得一种新型浅色导电颜料，克服了纯ＳｎＯ＿２或Ｓｂ＿２Ｏ＿３导电颜料易聚集、难分散的缺点，且大大降低成本。研究了影响颜料性能的各种因素。     

不同衬底上ZnO:Al透明导电薄膜的性能

室温下,采用射频磁控溅射法在玻璃和聚对苯二甲酸乙二醇酯（polyethylene terephthalate,PET）上沉积了掺铝的氧化锌（ZnO：Al,AZO）透明导电薄膜。通过X射线衍射仪分析不同衬底上AZO薄膜的结构,采用四探针测试仪及紫外可见光分光光度计测试薄膜的光电性能。结果表明：沉积在两种衬底上的AZO薄膜都具有六方纤锌矿结构,最佳取向均为[002]方向;玻璃衬底和PET衬底上制备的AZO薄膜的方阻分别为19/sq和45/sq,薄膜透光率均高于90%。实验表明,柔性衬底透明导电氧化物薄膜可以代替硬质衬底透明导电薄膜使电子器件向小型化、轻便化方向发展。     

浅色云异导电颜料制备工艺研究

用化学共沉积法方法在微细云母基片上包覆 Ｓｎｏ２－Ｓｂ２Ｏ３半导体化合物，经煅烧制得一种新型浅色导电颜料，克服了纯ＳｎＯ２或ＳｂＯ３导电颜料易聚焦，难分散的缺点，且大大降低成本。了影响颜料性能的各种因素。     

掺铝钛酸锶薄膜及其与CrOx复合膜的制备及氧敏性能的研究

以ＴｉＣｌ４,ＳｒＣｌ２．６Ｈ２Ｏ为主要原料,采用溶胶－凝胶法制备出掺Ａｌ＾３＋的钛酸锶薄膜,分析了薄膜的表面形貌和晶相组成,并比较了铝含量不同的ＳｒＴｉ１－ｘＡｌｘＯ３－δ薄膜的氧敏性能,实验结果表明：掺摩尔分类为０．０１的铝的钛酸锶薄膜表现出较高的氧敏性,但是,铝的掺入并没有消除钛酸锶薄膜的半导体特在中性气氛附近从ｎ型向ｐ型转变。在此基础上,又合了了ＳｒＴｉ０．９９Ａｌ０．０１Ｏ３－δ－ＣｒＯ     

平面磁控溅射氧化锌（ZnO）薄膜的几个问题

Ｃ轴取向一致的氧化锌（ＺｎＯ）薄膜是一种良好的压电材料。采用平面磁控溅射是制备ＺｎＯ薄膜较为理想的一种方法。为讨论溅射用靶体的掺杂、溅射功率和基片温度等问题，本实验溅射使用掺有２￣５ｗｔ％碳酸锂（Ｌｉ２ＣＯ３）的烧结陶瓷靶；溅射功率６００Ｗ左右；沉积薄膜基片温度３００℃，并注意其他有关条件的调节，对获得的薄膜用ＸＲＤ等方法评价性能。     

用等离子化学气相沉积工艺制备Al2O3薄膜

以乙酰丙酮铝Ａｌ（ａｃａｃ）３为前驱体用等离子化学气相沉积工艺在玻璃、石英、Ｓｉ（１００）和Ｎｉ等底材上沉积出了Ａｌ２Ｏ３薄膜。所获得的沉积膜或无碳、透明、致密（平均３．８ｇ·ｃｍ＾－３），或为透明致密的硬质（硬度Ｈｋ达２３７０）涂层。研究了各种实验参数对沉积速率、薄膜组成及膜层硬度的影响，认为偏压是具影响的参数。     

流态化CVD技术制备Al_2O_3－SnO_2复合粒子

在内径４０ｍｍ的流化床反应器中，利用ＳｎＣｌ＿４气相水解反应，制备了超细Ａｌ＿２Ｏ＿３－ＳｎＯ＿２复合粒子。通过ＸＲＤ，ＥＰ－ＭＡ，ＨＲＥＭ等现代化分析手段确定了产物中ＳｎＯ＿２的晶型及其在Ａｌ＿２Ｏ＿３团聚物中和在Ａｌ＿２Ｏ＿３原生颗粒表面的分散包敷形态。研究结果表明：３００℃下制备的产物中ＳｎＯ＿２呈无定态，经８００℃热处理２ｈ，ＳｎＯ＿２转化成金红石型，产物中ＳｎＯ＿２均匀分散于整个Ａｌ＿２Ｏ＿３团聚物中；１００℃下制备的产物中ＳｎＯ＿２以薄膜形式包敷在超细Ａｌ＿２Ｏ＿３颗粒表面；４５０℃下制备的产物中，ＳｎＯ＿２以６～１０ｎｍ的粒子形式淀积在Ａｌ＿２Ｏ＿３表面。     

退火工艺对Pb(Zr_(0.55)Ti_(0.45))O_3铁电薄膜结晶取向的影响

用射频磁控溅射法在Pt(111)/Ti/SiO2/Si上成功的制备了Pb(zr0.55Ti0.45)O3(PZT)铁电薄膜,通过传统退火(CFA)和快速退火(RTA)不同的退火方式,获得了(100)和(111)择优取向的铁电薄膜。对薄膜电学特性的测试表明,薄膜的织构对其电学性能有很大影响,(111)取向的薄膜与(100)取向的薄膜相比,剩余极化Pr和矫顽场Ec较大,但抗疲劳特性却较差。     

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.     

Hysteretic properties of Mn-doped Pb(Zr,Ti)O3 thin films

Pb(Zr,Ti)O₃ (PZT 30/70) and Mn-doped Pb(Zr,Ti)O₃ (PMZT 30/70) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition technique. The experiments found that the addition of Mn in PZT thin films greatly improves the ferroelectric properties of thin films. It is demonstrated that the Mn-doped (1 mol%) PZT showed fatigue-free characteristics at least up to 10¹⁰ switching bipolar pulse cycles under 10 V and excellent retention properties. The Mn-doped PZT thin films also exhibited well-defined hysteresis loops with a remnant polarization (Pr) of 34 μC/cm² and a coercive field (Ec) of 100 kV/cm for the thickness of 300 nm. Dielectric constant and loss (tanδ) for Mn doped PZT thin films are 214 and 0.008, respectively. These figures compare well with or exceed the values reported previously. In this paper, the mechanism by which Mn influences on the ferroelectric properties of PZT thin films has also been discussed.     

Multiferroic CoFe2O4-Pb(Zr(0.52)Ti(0.48))O3 core-shell nanofibers and their magnetoelectric coupling

Multiferroic CoFe(2)O(4)-Pb(Zr(0.52)Ti(0.48))O(3) core-shell nanofibers have been synthesized by coaxial electrospinning in combination with a sol-gel process. The core-shell configuration of nanofibers has been verified by scanning electron microscopy and transmission electron microscopy, and the spinel structure of CoFe(2)O(4) and perovskite structure of Pb(Zr(0.52)Ti(0.48))O(3) have been confirmed by X-ray diffraction and selected area electron diffraction. The multiferroic properties of core-shell nanofibers have been demonstrated by magnetic hysteresis and piezoresponse force microscopy, and their magnetoelectric coupling has been confirmed by evolution of piezoresponse under an external magnetic field, showing magnetically induced ferroelectric domain switching and changes in switching characteristics. The lateral magnetoelectric coefficient is estimated to be 2.95 × 10(4) mV/cmOe, two orders of magnitude higher than multiferroic thin films of similar composition.     

Metalorganic chemical vapor deposition of ferroelectric Pb(ZrxTi1- xO3thin films

Ferroelectric Pb(Zr_xTi_1-x)O₃ (PZT) thin films were successfully deposited on Pt/Ti/SiO₂Si substrates by metalorganic chemical vapor deposition (MOCVD). Pb(C₂H₅)₄, Zr(O-t-C₄H₉)₄, and Ti(O-i-C₃H₇)₄ were used as metalorganic precursors. Variations in crystalline structure, surface morphology, and grain size of deposited films were systematically investigated as a function of process parameters by using X-ray diffraction and scanning electron microscopy. The deposition temperature and gas composition in the reactor are the main parameters that control the microstructure and composition of films. An interrelationship between the grain orientation and surface roughness of the films was found. Films with (111) preferred orientation are significantly smoother than films with other preferred orientations. The ferroelectric properties of the films were also measured by RT66A ferroelectric tester for hysteresis loop and fatigue property. Electrical measurements revealed that the films had good ferroelectric characteristics with the high remanant polarization (32 μC/cm₂) and low coercive voltage (1.1 V).     

Fabrication of Pb(Zr,Ti)O3 thin films utilizing unconventional powder magnetron sputtering (PMS)

Pb(Zr,Ti)O3 (PZT) ferroelectric ceramic films exhibit highly superior ferroelectric, pyroelectric and piezoelectric properties which are promising for a number of applications including non-volatile random access memory devices, non-linear optics, motion and thermal sensors, tunable microwave systems and in energy harvesting (EH) use. In this research, a thin layer of PZT was deposited on two different substrates of Strontium Titanate (STO) and Strontium ruthenate (SRO) by powder magnetron sputtering (PMS) system. The preliminary powders, consisting of PbO, ZrO₂ and TiO_2, were manually mixed and placed into the target holder of the PMS. The deposition was performed at an elevated temperature reaching up to 600 °C via a ceramic heater. This high temperature is required for PZT thin film crystallinity, which is never achieved in conventional physical vapour deposition processes. The phase structure, crystallite size, stress-strain and surface morphology of deposited thin films were characterized using X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscopy (FESEM). The composition of the PZT thin films were also analysed by X-ray photoelectron spectroscopy (XPS). The mechanical properties of the thin films were evaluated with micro-scratch adhesive strength and micro hardness equipment. FESEM results showed that the PZT thin films were successfully deposited on both SRO and STO substrates. The surfaces of the coated samples were free from cracks, relatively smooth, uniform and dense. The profile of X-ray diffraction confirmed the formation of single-c-domain/single crystal perovskite phase grown on both substrates. The XPS analysis have shown that the PZT thin film grown by this method and that a target of PZT+10% PbO is a proper target for growing nominal PZT thin films. The adhesion strength and micro hardness results have confirmed the stability and durability of the thin film on the substrates, although higher values have been reported for thin film of PZT deposited on SRO surfaces.     

热处理对BiO_x薄膜的组成和结构的影响

采用反应磁控溅射法在氧气和氩气比例为20∶100的混合气体中制备了非化学计量的氧化铋薄膜。薄膜分别在真空和空气中400℃退火30min。采用X射线光电子能谱(XPS)和X射线衍射(XRD)研究了薄膜在真空和空气中退火对其组成和结构的影响。分析表明,在真空退火条件下薄膜中的金属铋和次氧化铋发生了相变,金属铋晶粒长大;而在空气中退火时薄膜主要发生了金属铋和次氧化铋的氧化过程,得到了四方Bi2O3。     

Electrical properties of sputtered PZT films on stabilized platinum electrode

PZT (54/46) thin films were deposited by r.f. magnetron sputtering followed by a post-annealing treatment on silicon substrates. The crucial role of a Ti adhesion layer on the Ti/Pt bottom electrode is presented. The deposition conditions and the thickness of Ti have dominant effects on the interactions between Ti and Pt during the annealing treatment. The Pt layer, whatever its thickness, did not act as a barrier against Ti-out diffusion. The stability of the bottom electrode was achieved by using a TiO_x layer instead of a pure metallic Ti adhesion layer. The electrical properties of PZT films in terms of dielectric and ferroelectric performance were evaluated, particularly as a function of the PZT film thickness.     

Microstructure and ferroelectric properties of sol–gel graded PZT (40/52/60) and (60/52/40) thin films

Graded Pb(Zr_x,Ti_1−x)O₃ films with Zr compositions varied across the thickness direction were deposited on Pt/Ti/SiO₂/Si substrate using a conventional spin-coating method. The up- and down-graded PZT films exhibited the perovskite polycrystalline structure. Microstructure investigations of the films showed a dense texture and successive layers of different compositions. The relative permittivities of the up- and down-graded PZT films measured at 1 kHz and room temperature were 1846 and 1019, respectively. Good dielectric and ferroelectric properties as well as the low-temperature processing suggested that the compositionally graded PZT films were promising for memory device applications.     

锰锑酸铅-锌铌酸铅-锆钛酸铅陶瓷的铁电性能

通过电滞回线测试,探讨了xPb(Mn1/3Sb2/3)0.05(Zr1/2Ti1/2)0.95O3(1-x)Pb(Zn1/3Nb2/3)0.28(Zr1/2Ti1/2)0.72O3[xPMnS-(1-x)PZN]陶瓷的铁电性能及铁电相变特性.同时研究了Ba2 取代Pb2 对材料铁电性能的影响.结果表明;三方相含量较高的0.2PMnS-0.8PZN陶瓷具有较高的矫顽场和较大的剩余极化强度;四方相含量较高的0.5PMnS-0.5PZN和0.6PMnS-0.4PZN陶瓷具有较低的矫顽场和较小的剩余极化强度,Ba2 取代使三方相含量增加,铁电性能明显提高.