Evaluating strength of thermally sprayed Al2O3 on aluminum

We evaluated the strength of thermally sprayed Al₂O₃ on aluminum. The thermally sprayed Al₂O₃ films were processed using low-pressure plasma spraying. The thickness of the thermally sprayed Al₂O₃ was 0.3 mm and 0.7 mm. We arranged a 4-point bending test and a heating test to evaluate the strength of the thermally sprayed Al₂O₃. We also investigated the effect of residual stress on the strength by measuring deformation of the thermally sprayed Al₂O₃ after removing the aluminum substrates. The bending strength was 120 MPa, regardless of thickness. We assumed that the bending strength would be equal to the tensile strength because the thermally sprayed Al₂O₃ films were very thin. A crack was generated at 433 K, regardless of thickness. The thermal stress was 160 MPa when the crack was generated. It was 40 MPa higher than we estimated. We found that the residual stress was compression stress that measured 40 MPa, which contributed to the prevention of the crack generation. We presume that the tensile strength was lower than the thermal stress because the residual stress was reduced by stress-relaxing of the aluminum near the interface in the bending test. The influence of heat-resisting strength is dominant over residual stress. Therefore, strength design should take into account residual stress.     

Mechanomaking of Fe/Al2O3 and FeCr/Al2O3 nanocomposites powders fabrication

Nanocomposite powders (Fe or Fe-Cr alloy)/-Al₂O₃ (75 and 85 vol.%) were obtained by room-temperature high-energy milling powder mixtures of hematite (and chromium oxide) with aluminum and alumina in a high-capacity mill for 8-10 h. The composition of iron and iron alloys was followed by Mössbauer spectroscopy, while the appearance of other phases was revealed by X-ray diffraction. The powder particles produced are assemblies of grains (10–20 nm in size) with a wide size distribution (from well below 1 μm up to several hundreds) and low porosity (fully dense particles). Both the metallic and ceramic phases have crystallite sizes below 15 nm for all the compositions investigated. Nano-nano type ceramic nanocomposites were, therefore, obtained.     

Al2O3颗粒形貌对注凝成型ZrO2/Al2O3陶瓷性能的影响

采用3种不同形貌的Al₂O₃原料对注凝成型制备ZrO₂/Al₂O₃（ZTA）陶瓷工艺中悬浮体的流变性能进行了研究。以低毒的单体N,N-二甲基丙烯酰胺（DMAA）制备了ZrO₂/Al₂O₃坯体和陶瓷。讨论了3种不同形貌的Al₂O₃原浆料的分散剂用量、球磨时间和固含量对浆料流变性的影响。Al₂O₃粉体呈扁平状有利于降低浆料的黏度,Al₂O₃粉体呈棒状对生坯强度的提高有利。制得的3种ZrO₂/Al₂O₃坯体颗粒间结合紧密,抗弯强度分别达到21.45,19.87,25.90 MPa。Al₂O₃粉体呈颗粒状有利于最终陶瓷力学性能的提高,陶瓷的抗弯强度及断裂韧性分别为680 MPa和7.49 MPa·m^1/2,453.1 MPa和6.8 MPa·m^1/2,549.4 MPa和6.34 MPa·m^1/2。     

Formation process of Al2O3 thin film by reactive sputtering

Al and Al₂O₃ films were deposited by RF magnetron sputtering using a mixed gas of Ar and O₂. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O₂ flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O₂ flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5-7 nm at an O₂ flow ratio of 100% by ellipsometry.     

陶瓷氧化铝—金刚石薄膜复合材料的研究

以有机高分子化合物酒精和氢气为反应气体,用热丝CVD法在Al2O3陶瓷基片上沉积出金刚石薄膜,用拉曼光谱,X射线衍射等方法进行了表征,探索了碳源浓度、热丝温度、基片温度和预处理工艺对金刚石薄膜结构和性能的影响。并且得到了最佳的工艺条件。探讨了金刚石在Al2O3衬底上的成核和生长机理。     

Al2O3基多孔隔热材料表面Al2O3/MoSi2涂层的制备及其性能

采用刷涂法在Al₂O₃基多孔隔热材料表面制备Al₂O₃/MoSi₂涂层,涂层以硅溶胶作为粘结剂,纳米Al₂O₃与Al₂O₃纤维作为耐高温组分,MoSi₂为高发射率组分。通过SEM、XRD对Al₂O₃/MoSi₂涂层微观表面结构、物相组成进行分析。研究纳米Al₂O₃与Al₂O₃纤维的质量比和MoSi₂含量对Al₂O₃/MoSi₂涂层耐温性能的影响,并对Al₂O₃/MoSi₂涂层的抗热震性能、发射率进行表征。结果表明,当纳米Al₂O₃与Al₂O₃纤维的质量比小于1∶1时,热考核后Al₂O₃/MoSi₂涂层表面无裂纹产生;当纳米Al₂O₃与Al₂O₃纤维的质量比在1∶2~1∶4之间时,Al₂O₃/MoSi₂涂层中的纤维网络较完整。MoSi₂的含量为20%时,Al₂O₃/MoSi₂涂层抗热震实验循环25次后表面保持完好,热考核后在2.5~25 μm波段的平均发射率在0.85左右,具有较高的发射率。      

Effect of Al2O3 particle size on vacuum breakdown behavior of Al2O3/Cu composite

In order to clarify the effect of Al₂O₃ particle size on the arc erosion behavior of the ceramic-reinforced Al₂O₃/Cu composite, Al₂O₃/Cu composites with different sizes of Al₂O₃ particles were prepared by powder metallurgy, the effect of Al₂O₃ particle size on the characteristics of arc motion was studied, and the mechanism of arc erosion of Al₂O₃/Cu composites was discussed as well. The results show that with decrease in the size of Al₂O₃ particles, the erosion area increases significantly and the erosion pits become shallower. The vacuum breakdown is preferred to appear in the area between Al₂O₃ particle and the copper matrix. Based on the experimental results and theoretical analysis, a particle partition arc model is proposed.     

机械化学合成Ni2Al3/Al2O3去合金化制备Raney-Ni/Al2O3复合粉体

以NiO粉和Al粉为原料,采用机械球磨诱发化学反应制备了Ni_2Al_3/Al_2O_3复合粉体。利用X射线衍射仪(XRD)和附带能量色散谱仪(EDS)的扫描电子显微镜(SEM)对复合粉体球磨过程中的固态反应过程、表面形貌进行表征。将Ni_2Al_3/Al_2O_3复合粉体用浓度为20%的NaOH溶液腐蚀2h,可得到纳米晶结构的Ni/Al_2O_3复合粉体。利用XRD和TEM对其物相和结构进行了表征。结果表明,球磨1h后混合粉末仍为NiO粉和Al粉,球磨3h后NiO粉和Al粉在机械力的作用下反应形成Ni_2Al_3和Al_2O_3粉体,机械力诱发的NiO和Al之间的反应属于突发型反应,继续球磨10h后形成Ni_2Al_3/Al_2O_3复合粉体。Ni_2Al_3/Al_2O_3复合粉体在70℃、质量比为20%NaOH溶液中刻蚀2h,可获得Ni/Al_2O_3复合粉体。     

CoAl2O4/Al2O3纳米复合陶瓷的结构与表征

利用溶胶-凝胶方法制备了的CoAl2O4/Al2O3纳米复合陶瓷,并用X-ray分析(XRD)、红外光谱(IR)和扫描电镜分析(SEM)对其结构进行了分析.结果表明,随Al2O3含量增多,CoAl2O4尖晶石相从CoAl2O4/Al2O3凝胶中的析晶温度升高.SEM形貌也说明,随Al2O3含量增多,CoAl2O4/Al2O3陶瓷中形成一定的层状结构.     

Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Aiming for the investigation of insulating properties of aluminum oxide (Al₂O₃) layers, as well as the combination of this oxide with tin dioxide (SnO₂) for application in transparent field effect transistors, Al thin films are deposited by resistive evaporation on top of SnO₂ thin films deposited by sol–gel dip-coating process. The oxidation of Al films to Al₂O₃ are carried out by thermal annealing at 500 °C in room conditions or oxygen atmosphere. X-ray diffraction data indicate that tetragonal Al₂O₃ is indeed obtained. A simple device and electric circuit is proposed to measure the insulating properties of aluminum oxide and the transport properties of SnO₂ as well. Results indicate a fair insulation when four layers or Al₂O₃ are grown on the tin dioxide film, concomitant with thermal annealing between each layer. The current magnitude through the insulating layer is only 0.2% of the current through the semiconductor film, even though the conductivity of the SnO₂ alone is not very high (the average resistivity is 2 Ω cm), because no doping is used. The presented results are a good indication that this combination may be useful for transparent devices.     

Lightweight geopolymer made of highly porous siliceous materials with various Na2O/Al2O3 and SiO2/Al2O3 ratios

The syntheses of lightweight geopolymeric materials from highly porous siliceous materials viz. diatomaceous earth (DE) and rice husk ash (RHA) with high starting SiO₂/Al₂O₃ ratios of 13.0-33.5 and Na₂O/Al₂O₃ ratios of 0.66-3.0 were studied. The effects of fineness and calcination temperature of DE, concentrations of NaOH and KOH, DE to RHA ratio; curing temperature and time on the mechanical properties and microstructures of the geopolymer pastes were investigated. The results indicated that the optimum calcination temperature of DE was 800 °C. Increasing fineness of DE and starting Na₂O/Al₂O₃ ratio resulted in an increase in compressive strength of geopolymer paste. Geopolymer pastes activated with NaOH gave higher compressive strengths than those with KOH. The optimum curing temperature and time were 75 °C and 5 days. The lightweight geopolymer material with mean bulk density of 0.88 g/cm³ and compressive strength of 15 kg/cm² was obtained. Incorporation of 40% RHA to increase starting SiO₂/Al₂O₃ and Na₂O/Al₂O₃ ratios to 22.5 and 1.7 and enhanced the compressive strength of geopolymer paste to 24 kg/cm² with only a marginal increase of bulk density to 1.01 g/cm³. However, the geopolymer materials with high Na₂O/Al₂O₃ (>1.5) were not stable in water submersion.     

Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputtering

A thin-film structure comprising Al₂O₃/Al-rich Al₂O₃/SiO₂ was fabricated on Si substrate. We used radio-frequency magnetron co-sputtering with Al metal plates set on an Al₂O₃ target to fabricate the Al-rich Al₂O₃ thin film, which is used as a charge storage layer for nonvolatile Al₂O₃ memory. We investigated the charge trapping characteristics of the film. When the applied voltage between the gate and the substrate is increased, the hysteresis window of capacitance-voltage (C-V) characteristics becomes larger, which is caused by the charge trapping in the film. For a fabricated Al-O capacitor structure, we clarified experimentally that the maximum capacitance in the C-V hysteresis agrees well with the series capacitance of insulators and that the minimum capacitance agrees well with the series capacitance of the semiconductor depletion layer and stacked insulator. When the Al content in the Al-rich Al₂O₃ is increased, a large charge trap density is obtained. When the Al content in the Al-O is changed from 40 to 58%, the charge trap density increases from 0 to 18 × 10¹⁸ cm^− 3, which is 2.6 times larger than that of the trap memory using SiN as the charge storage layer. The device structure would be promising for low-cost nonvolatile memory.     

Bi2O3助熔剂对CaO-B2O3-SiO2/Al2O3玻璃陶瓷复合材料性能的影响

以CaO-B₂O₃-SiO₂(CBS)玻璃粉体和Al₂O₃陶瓷粉体为原料,通过在CBS与Al₂O₃的质量比固定为50:50的玻璃-陶瓷复合材料中添加适量的Bi₂O₃作为烧结助熔剂,探讨了Bi₂O₃助熔剂对CBS/Al₂O₃复合材料的烧结性能、介电性能、抗弯强度和热膨胀系数的影响规律.研究表明:Bi₂O₃助熔剂能通过降低CBS玻璃的转变温度和黏度促进CBS/Al₂O₃复合材料的致密化进程,于880 ℃下烧结即能获得结构较致密、气孔较少的CBS/Al₂O₃复合材料.然而,过量添加Bi₂O₃将使玻璃的黏度过低,从而恶化CBS/Al₂O₃复合材料的烧结性能、介电性能及抗弯强度.当Bi₂O₃的添加量为CBS/Al₂O₃复合材料的1.5wt%时,于880 ℃下烧结即能获得最为致密的CBS/Al₂O₃复合材料,密度为2.82 g·cm^-3,这一材料具有良好的介电性能(介电常数为7.21,介电损耗为1.06×10^-3),抗弯强度为190.34 MPa,0~300 ℃的热膨胀系数为3.52×10^-6 K^-1.     

Al2O3-TiC/Al2O3-TiC-CaF2复合叠层陶瓷材料摩擦磨损性能

将Al₂O₃-TiC陶瓷材料与具有固体润滑特性的Al₂O₃-TiC-CaF₂陶瓷材料进行叠层, 通过真空热压烧结制备Al₂O₃-TiC/Al₂O₃-TiC-CaF₂复合叠层陶瓷材料。在环盘式摩擦磨损试验机上进行摩擦磨损实验, 研究该材料在不同载荷、 转速条件下的摩擦系数和磨损率, 分别用SEM及EDS观察材料磨损前后的微观形貌和分析其成分组成, 研究其磨损机制。结果表明: 在相同载荷条件下, Al₂O₃-TiC/Al₂O₃-TiC-CaF₂复合叠层陶瓷材料的摩擦系数和磨损率随着转速的升高而下降, 在相同转速条件下, 其摩擦系数和磨损率随着载荷的增加而下降; Al₂O₃-TiC/Al₂O₃-TiC-CaF₂复合叠层陶瓷材料的磨损机制主要是磨粒磨损和黏着磨损。     

Electrical characteristics of Ti-O/Ta2O5 thin film sputtered on Ta/Ti/Al2O3 substrate

The electrical characteristics of Ti-O/Ta₂O₅ films sputtered on Ta/Ti/Al₂O₃ substrate were investigated. Ta (tantalum) was used for the bottom and upper electrodes for the purpose of simplifying the fabrication process and Al₂O₃ substrates were used, which are needed in integral passive devices. Ta/Ti-O/Ta₂O₅/Ta/Ti/Al₂O₃ capacitors were annealed at 700 °C for 60 s in vacuum. The X-ray diffraction pattern (XRD) results showed that as-deposited Ta had a highly preferred orientation, but Ta₂O₅ film had amorphous structure, which was transformed to crystallization structure by rapid thermal heat treatment. We examined the log J-E and C-V characteristics of the dielectric thin films deposited on the Ta bottom electrode. From these results, we concluded that the leakage current could be reduced by introducing a Ti-O buffer layer. The conduction mechanisms of Ta/Ti-O/Ta₂O₅/Ta/Ti/Al₂O₃ capacitors could be interpreted appropriately by hopping conduction in lower field (E<1×10⁵ V/cm) and space-charge-limited current in higher fields (1×10⁵ V/cm<E).     

Surface and catalytic properties of MoO3/Al2O3 system doped with Co3O4

Thermal solid-solid interactions in cobalt treated MoO₃/Al₂O₃ system were investigated using X-ray powder diffraction. The solids were prepared by wet impregnation method using Al(OH)₃, ammonium molybdate and cobalt nitrate solutions, drying at 100 °C then calcination at 300, 500, 750 and 1000 °C. The amount of MoO₃, was fixed at 16.67 mol% and those of cobalt oxide were varied between 2.04 and 14.29 mol% Co₃O₄. Surface and catalytic properties of various solid samples precalcined at 300 and 500 °C were studied using nitrogen adsorption at −196 °C, conversion of isopropanol at 200-500 °C and decomposition of H₂O₂ at 30-50 °C.The results obtained revealed that pure mixed solids precalcined at 300 °C consisted of AlOOH and MoO₃ phases. Cobalt oxide-doped samples calcined at the same temperature consisted also of AlOOH, MoO₃ and CoMoO₄ compounds. The rise in calcination temperature to 500 °C resulted in complete conversion of AlOOH into very poorly crystalline γ-Al₂O₃. The further increase in precalcination temperature to 750 °C led to the formation of Al₂(MoO₄)₃, κ-Al₂O₃ besides CoMoO₄ and un-reacted portion of Co₃O₄ in the samples rich in cobalt oxide. Pure MoO₃/Al₂O₃ preheated at 1000 °C composed of MoO₃-αAl₂O₃ solid solution (acquired grey colour). The doped samples consisted of the same solid solution together with CoMoO₄ and CoAl₂O₄ compounds.The increase in calcination temperature of pure and variously doped solids from 300 to 500 °C increased their specific surface areas and total pore volume which suffered a drastic decrease upon heating at 750 °C. Doping the investigated system with small amounts of cobalt oxide (2.04 and 4 mol%) followed by heating at 300 and 500 °C increased its catalytic activity in H₂O₂ decomposition. This increase, measured at 300 °C, attained 25.4- and 12.9-fold for the solids precalcined at 300 and 500 °C, respectively. The increase in the amount of dopant added above this limit decreased the catalytic activity which remained bigger than those of un-treated catalysts. On the other hand, the doping process decreased the catalytic activity of treated solids in isopropanol conversion especially the catalysts precalcined at 300 °C. This treatment modified the selectivities of treated solids towards dehydration and dehydrogenation of reacted alcohol.The activation energies of H₂O₂ decomposition were determined for pure and variously doped solids. The results obtained were discussed in light of induced changes in chemical composition and surface properties of the investigated system due to doping with cobalt oxide.     

Bond strength and microstructure investigation of Al2O3/Al/Al2O3 joints with surface modification of alumina by titanium

Joints of Al₂O₃/Al/Al₂O₃ are formed by liquid-state bonding of alumina substrates covered with thin titanium film of 800 nm thickness using an Al interlayer of 30 or 300 μm at 973 K under a vacuum of 0.2 mPa for 5 min and an applied pressure of 0.01 MPa. The bond strength of the joints is examined by a four-point bend testing at room temperature coupled with optical, scanning and transmission electron microscopy. Results show that: (i) bonding occurs due to the formation of a reactive interface on the metal side of the joint with the presence of Al₃Ti precipitates (ii) a decrease in Al layer thickness leads to stronger Al₂O₃/Al/Al₂O₃ bonds accompanied by a change of both the distribution of reaction products (Al₃Ti) in the region of the interface and the failure surface characteristics.     

不锈钢基Al2O3/SiC双层薄膜的制备和性能

用磁控溅射法在奥氏体不锈钢上分别制备了SiC单层膜和Al2O3/SiC双层膜,研究了溅射气压,溅 射功率以及退火温度对性能的影响.对比了二者的结构、硬度以及耐腐蚀性.结果表明,Al2O3缓冲层降低了SiC薄膜与奥氏体不锈钢基底的热失配和晶格失配,减少了因其而产生的缺陷,从而改善了奥氏体不锈钢上SiC薄膜的结晶质量.     

Microstructure of Al2O3 nanocrystalline/cobalt-based alloy composite coatings by laser deposition

Composite coatings, made of nano-Al₂O₃/cobalt-based alloy, produced by a 5-kW CO₂ laser on Ni-based superalloy were investigated. The coatings were examined to reveal their microstructure using optical microscope, scanning electron microscope, transmission electron microscope and X-ray diffraction instrument. The results showed that some equilibrium or non-equilibrium phases, such as γ-Co, Cr₂₃C₆, CoAl₂O₄, Al₂O₃ and ε-Co existed in the coatings. Fine and short dendritic microstructure and columnar to equiaxed transition occurred by adding nano-Al₂O₃ particle. With the increase of nano-materials (1%, mass fraction), fully equiaxed crystallization appeared. These were contributed to that nano-Al₂O₃ particles acted as new nucleation site and rapid solidification of the melted pool. The results also showed inhomogeneous dispersion of nano-Al₂O₃ that resulted in the formation of ε-Co phase in the coatings. The sub-microstructure of the clad was stacking fault. The mechanism of formation of equiaxed grains was also analyzed.     

Observations of Al2O3 and free silicon at the interface between aluminum films and SiO2

Auger electron spectroscopy in conjunction with ion sputter profiling was used to study the physical distribution and chemistry of aluminum, silicon and oxygen at the interface between sputter-deposited aluminum films and SiO₂ substrates. It is expected from thermodynamic considerations that the aluminum will reduce the SiO₂ wherever the two are in direct contact, leaving Al₂O₃ and free silicon. We describe the capabilities of this experimental technique in the analysis of the reaction. Our observations of the atomic percentages of the solid state reaction products and their variation with distance through the interface show that the reduction does occur, that it results in regions with up to approximately 10% free silicon and Al₂O₃ and that the reaction products are distributed over a layer approximately 400 Å thick.