偶联剂对聚酰亚胺／纳米Al2O3杂化薄膜结构与性能的影响

将经不同种类硅烷偶联剂改性的纳米Al2O3粒子借助超声波以一定方式均匀分散于聚酰胺酸胶液中,制备聚酰亚胺/纳米Al2O3杂化薄膜,并对该杂化薄膜的微观形貌、分子链有序度、热稳定性、力学性能、电击穿场强进行表征与测试.结果表明,偶联剂种类影响杂化薄膜的分子链有序度,在使用4种偶联剂改性纳米Al2O3制备的PI杂化薄膜中,使用偶联剂KH550的Pl杂化薄膜的热稳定性、力学性能最好;使用AE3012的PI杂化薄膜的电击穿场强最高.     

纳米Al2O3的晶型对聚酰亚胺杂化薄膜性能的影响

将经偶联剂处理的纳米Al2O3粉体,借助超声波以一定方式均匀分散于聚酰胺酸溶液中,制备出Al2O3不同晶型、不同含量的PI/纳米Al2O3杂化薄膜,并对杂化薄膜微观形貌、聚集态结构、光透过率、热稳定性、电击穿场强进行研究,分析Al2O3晶型和含量对PI/纳米Al2O3杂化薄膜的结构和性能的影响.结果表明:PI/纳米Al2O3杂化薄膜的热稳定性,电击穿场强均高于纯PI薄膜,且随着纳米Al2O3含量的提高热稳定性也随之提高,电击穿场强先升高后降低;填充Al2O3粉体的晶型对PI薄膜分子链堆积密度有较大的影响,导致添加不同晶型Al2O3的杂化薄膜性能的差异.     

无机组分对聚酰亚胺杂化薄膜电性能的影响

初步探讨了聚酰亚胺薄膜在电场作用下的电学行为,采用溶胶-凝胶工艺制备了聚酰亚胺/二氧化硅纳米杂化薄膜,并对薄膜进行浸水24 h处理,利用原子力显微镜对制备的薄膜进行表面形貌表征,讨论了无机组分SiO2和水对薄膜电性能的影响.结果表明:无机组分的引入及两相间的界面形态将对杂化薄膜的电学性能产生重大的影响;偶联剂的引入使得两相间产生紧密的微相结合,并对电性能产生一定的影响.     

新型耐电晕聚酰亚胺杂化薄膜的制备与性能研究

通过超声分散和原位聚合法制备了以s-BPDA/1,3,4-APB为树脂基体,以具有不同SiO2添加量的新型球型SiO2/聚酰亚胺杂化薄膜,所制备的杂化薄膜具有优异的力学、热学和耐电晕性能.通过SEM、TEM、FT-IR、UV-vis、DSC、TGA等实验手段对产物进行了分析和表征,并系统研究了SiO2的添加量对杂化薄膜...     

纳米杂化聚酰亚胺薄膜分形特征研究

无机纳米杂化聚酰亚胺薄膜是一种新型纳米功能复合材料，具有非常广阔的应用前景。研究了无机纳米杂化聚酰亚胺薄膜的表面形貌和微结构，测试结果表明，纳米颗粒为α-Al2O3，颗粒尺寸在3-5nm范围内主要分布在聚酰亚胺基体畴界处。薄膜具有分形特征，其分形雏数接近扩散限制凝聚模型的理论值。     

聚酰亚胺/纳米Al_2O_3三层复合薄膜的制备

将掺杂纳米Al2O3的聚酰胺酸与未掺杂聚酰胺酸在玻璃板上逐层涂膜,热亚胺化制备了3层聚酰亚胺/纳米Al2O3复合薄膜.采用扫描电镜(SEM)对该薄膜的微观形貌进行了表征,测试了薄膜的热稳定性、力学性能及电击穿场强.结果表明,复合薄膜的热性能及电击穿场强均高于掺杂薄膜及未掺杂膜,当热失重达到10%时,复合薄膜的热分解温度达到了629.1℃;与掺杂薄膜相比,复合薄膜的力学性能得到明显提高,拉伸强度和断裂伸长率分别为117.4 MPa和18.5%.     

高模量、低热膨胀系数聚酰亚胺杂化薄膜的制备

通过在聚酰胺酸中加入正硅酸乙酯(TEOS)和硅烷偶联剂(KH550),制备了不同SiO2含量的PI/SiO2杂化薄膜.采用FTIR、TMA、SEM以及TGA分析了PI/SiO2杂化薄膜的性能和结构.结果表明,TEOS经水解缩合与聚酰亚胺(PI)形成了有机-无机杂化网络结构,SiO2均匀分散在聚酰亚胺基体中;SiO2和偶联剂的引入提高了杂化薄膜的热稳定性;随着SiO2含量的增加,PI/SiO2杂化薄膜的拉伸强度降低,但当SiO2含量达到20%时,弹性模量增大到3.4GPa.     

聚酰亚胺/多壁碳纳米管杂化薄膜力学性能研究

采用不同长径比的多壁碳纳米管通过原位聚合法制备一系列多壁碳纳米管改性的聚酰胺酸胶液,并经热亚胺化途径制备聚酰亚胺杂化薄膜。利用扫描电子显微镜(SEM)观察薄膜的断面形貌,采用红外光谱仪(FT-IR)分析酸化前后多壁碳纳米管表面官能团的变化,并采用电子万能试验机对薄膜的力学性能进行测试,分析了多壁碳纳米管的含量和长径比对杂化薄膜力学性能的影响。结果表明,小掺杂量下,长径比大的多壁碳纳米管更有利于增强PI杂化薄膜的拉伸强度;而长径比小的多壁碳纳米管使杂化薄膜拉伸强度提高的碳纳米管掺杂量范围更宽。     

超导用低温绝缘材料-聚酰亚胺杂化薄膜

聚酰亚胺薄膜在1966年由美国杜邦公司首次推向市场,初期主要用于航空航天和军事等高端领域,20世纪80年代以来,该材料以其优良的电气性能、阻燃性能、耐高温和耐辐射等性能作为高性能绝缘材料大量应用于电子和电气领域。近年来,聚酰亚胺开始应用于低温环境,如HT-7U托克马克装置,其中关键部位低温超导磁体中的层间绝缘、匝间绝缘及整个磁体的对地绝缘等都是使用聚酰亚胺薄膜。目前,高温超导限流器、高温超导电缆和高温超导储能装置都需要使用大量绝缘薄膜材料。长期以来,由于西方国家对我国高科技领域实行技术封锁,我国聚酰亚胺薄膜一直落后…     

杂化聚酰亚胺薄膜无机相形貌和介电性能研究

采用溶胶-凝胶法制备纳米二氧化硅及氧化铝溶胶,将其掺入聚酰胺酸溶液中,制得聚酰亚胺/二氧化硅-氧化铝杂化薄膜,利用原子力显微镜对杂化薄膜的无机相微观形貌进行表征,用精密阻抗分析仪测试杂化膜介电性能.研究表明:掺入无机组分含量均为4%时,随着掺入二氧化硅所占比例的增大,无机纳米粒子的平均粒径增加,当其与氧化铝质量比为8:1时无机相呈网络状,与聚酰亚胺基体界面模糊;掺入无机组分对杂化薄膜的介电性能产生影响,介电常数ε和介电损耗tgδ随频率增加而减小,在相同频率下随掺入二氧化硅所占比例增大,介电常数ε和介电损耗tgδ增大.     

含硅聚酰亚胺/纳米钛酸钡杂化膜的热机械性能研究

由偏钛酸和氢氧化钡为原料制得纳米钛酸钡粉体.X射线衍射分析表明,制备的钛酸钡具有典型的钙钛矿结构,平均晶粒尺寸为16.5nm.将纳米钛酸钡粉体分散于聚酰胺酸中经热酰亚胺化制得聚酰亚胺/纳米钛酸钡杂化膜.杂化膜具有比本体聚酰亚胺高的玻璃化转变温度和热稳定性.随着钛酸钡含量的增加,杂化膜的储存模量增加,而力学内耗的最大值下降.     

Synthesis and optical properties of photosensitive polyimide/silica hybrid thin films

In this study, the photopatternable fluorinated polyimide/silica hybrid materials were synthesized by 4,4′-hexafluoroisopropylidenediphthalic anhydride (6FDA), oxydianiline (ODA), aminopropyltriethoxysilane (APrTEOS), and 12 nm colloidal silica with a coupling agent. The monodispersed colloidal silica was used to form a silica domain instead of alkoxysilanes in the conventional process. The coupling agents used were 3-methacryloxypropyl trimethoxysilane (MPTMS) or (4-vinylphenethyl)trimethoxysilane (VPTMS). The coupling agent and the silica domain were designed to reduce the volume shrinkage and enhance the thermal properties, respectively. The retention of 2-methyl acrylic acid 2-dimethylamino-ethyl ester (MDAE) in the prepared hybrid films was supported by X-ray photoelectron spectroscopy (XPS) and thickness variation during the curing process. The particle size of silica in the hybrid materials based on SEM analysis was in the range of 10–25 nm. The prepared hybrid materials also exhibited a reduced refractive index after increasing the silica content. The SEM diagram suggested the prepared photosensitive hybrid materials could obtain lithographical patterns with a good resolution. These results indicate that the newly prepared photosensitive polyimide/silica hybrid materials may have potential applications for optical devices.     

Preparation of surface-silvered graphene-CNTs/polyimide hybrid films: Processing,morphology and properties

Silver nanoparticles modified graphene-carbon nanotubes/polyimide (Gr-CNTs/PI) films have been prepared by electrochemical reduction of silver nitrate on potassium hydroxide hydroxylated of Gr-CNTs/PI films surface. The as-prepared nanocomposites were characterized by transmission electron microscopy, scanning electron microscopy, X-ray diffraction analyzer and semiconductor characterization system. The lower content of Gr-CNTs (≤10 wt. %) doping in PI matrix can improve the conductivity of PI films more clearly than pure CNTs. The conductivity can be regulated by controlling Gr-CNTs content in PI matrix. These silver nanoparticles into Gr-CNTs/PI films presented here can act as deposition seeds which can initiate subsequent electroless silver or copper or electrodeposition other metal.     

溶胶-凝胶法制备无机纳米/聚酰亚胺杂化膜及其表征

采用溶胶-凝胶法制备了SiO2及A12O3溶胶,并将其掺入到聚酰胺酸基体中,得到无机纳米SiO2-Al2O3/聚酰亚胺杂化膜,并对其结构性能进行了研究.实验表明,薄膜材料中无机纳米SiO2和Al2O3粒子分散均匀,与有机相存在键合;材料热分解温度有所提高.     

Dielectric properties of on-chip-cured polyimide films

Spin-coated polyimide thin films were locally cured using microelectromechanical system microhotplates as an alternative approach to the conventional wafer-level curing process. The on-chip cured polyimide films were characterized Fourier transform infrared spectroscopy. The polyimide was found to be fully cured at a temperature over 350 °C for 1 h. The dielectric properties of 350 °C-cured polyimide films were measured over broad frequency, temperature, and humidity ranges. As is expected for most polymer materials, the dielectric constant decreased with increasing frequency due to dielectric relaxation, which may be due to the fact that multiple relaxation times (i.e., several types of polarization), rather than a single one are involved. The dissipation factor was very low and nearly flat for excitation frequencies less than 1 MHz. Both the dielectric constant and the dissipation factor increased with increasing temperature from 10 °C to 90 °C, and relative humidity (RH) from 30%RH to 95%RH, with a steeper slope at lower frequencies. These results indicate that on-chip-cured polyimide films have weak low frequency dispersion due to the aging effect at high temperature and humidity.     

Dielectric properties of pyrolysed polyimide films

We have studied the dielectric properties, in the frequency range 10^–4–10⁷ Hz, of polyimide films that were heat treated in vacuum in order to increase their conductivity. Films with electrical properties at the threshold between the insulating and conducting states show an anomalous low frequency dispersion composed of two power laws. The experimental results are consistent with electrical conduction in random one-dimensional chains. Also contact effects are present in our spectra. We conclude that the conducting inclusions formed upon heat treatment of polyimide films are arranged in linear chains.