一种新型信息处理器件:神经形态器件

人工智能时代呈现指数增长的待处理数据量对计算机能效提出了更高的要求。因此,在后摩尔时代显然迫切需要开发新型的计算机技术来应对这种挑战。受人脑并行运算架构的启发,模拟突触器件基于“存算一体”架构被认为是突破传统冯·诺依曼瓶颈的有效技术。本文着重梳理了神经形态器件的忆阻机制,按照编程方式对近期突触器件的相关工作开展了分类解读,并结合器件特性介绍了它们在感知模拟等方面的潜在应用。最后,总结了当前神经形态器件所面临的关键技术挑战,并对其未来的发展前景进行了展望。     

Domain-specific innovativeness and new product adoption: A case of wearable devices

Wearable technology has recently started gaining mass market attention, but the actual adoption of the technology is not up to expectations. The current study examines the effects of consumers’ domain-specific innovativeness (DSI) on the adoption of wearable technology. In this study, consumer DSI is first conceptualized to have two dimensions namely, product-possessing innovativeness (PPI) and information-possessing innovativeness (IPI). The effects of PPI and IPI on perceived attributes of wearable technology (relative advantage, social image, aesthetics, and novelty) are then examined, which influence purchase intention. Exploratory and confirmatory factor analyses were conducted on a survey data from young consumers. Structural equation modeling was employed to evaluate the proposed research model. Results demonstrate that 1) the DSI construct must be examined in the two dimensions so that it can properly measure the nature and characteristics of DSI, 2) IPI plays an important role, having a positive effect on all four perceived attributes of IT innovations, 3) PPI has a positive effect on perceived social image and perceived novelty, and finally 4) all perceived attributes of IT innovations have a positive effect on consumers’ purchase intention of wearable devices. Implications for research and practice are discussed.     

一种可穿戴人体运动轨迹测评装置的液晶显示设计

基于TMS320F28335设计了一种人体运动识别与测评装置。利用运动传感器MPU6050获取人体运动姿态数据,并与标准数据相比较,能够实时提醒使用者动作的规范程度。独特的可编程教练模式,能够现场采集和处理标准数据,适用于体育训练和患者康复。该装置使用串口LCD作为显示模块,能够显示所测人体运动的加速度、角度和人体运动轨迹的测评与分析结果。给出了系统液晶显示电路的硬件设计和软件流程图。实验结果表明,所设计的显示电路模块接口简单,使用方便,体积适中,能够满足可穿戴人体运动轨迹测评的显示要求。     

The chording glove: a glove-based text input device

This paper introduces a new text input device called the chording glove. The keys of a chord keyboard are mounted on the fingers of a glove. A chord can be made by pressing the fingers against any surface. Shift buttons placed on the index finger enable the glove to enter the full ASCII character set. The chording glove is designed as a text input device for wearable computers and virtual environments. An experiment was conducted to assess the performance of the glove. After an average of 80 min of a tutorial, ten subjects reached a continuous text input speed of 8.9±1.4 words/min, and after 10 1-hr sessions, they achieved 16.8±2.5 words/min     

A new semiconductor switching device

A new bipolar-type semiconductor switching device is proposed, fabricated by two diffusion processes and without any isolation technique. The device has an n⁺-diffused small electrode instead of a gate electrode in the MOS transistor structure. This device can have high photo sensitivity in the charge storage mode operation.     

A new three-terminal switching device

A new switching device has been conceived and reduced to practice. This device is a once-programmable three-terminal fuse (TTF) with an on-resistance of a good metallic conductor and an off-resistance which is essentially infinite. In the new structure the fusible circuit path is fully isolated from a control electrode both before and after programming. We discuss the basic concept of the TTF and highlight some of its possible applications     

A new three-terminal tunnel device

A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.     

Two-factor wearable device authentication protocol based on PUF and IPI

Wearable device is pushing the rapid development of mobile health,however,the open architecture of wireless body area network has brought challenges for the security of user data.In order to protect the security of user data,a two-factor authentication protocol between device note and data hub was proposed based on physically unclonable function and interpulse interval.Using dual uniqueness of device physical characteristic and user biometric trait,the protocol can resist compromise and impersonation attacks and was specially suitable for resource constrained wearable devices under body area network.Compared with the existing authentication schemes,the security of the proposed protocol was enhanced.The practicability and effectiveness of the protocol are confirmed by hardware implementation on FPGA.     

移动可穿戴医疗设备的应用发展研究

在物联网迅速发展的时代大背景下,随着个性化医疗观念的普及,移动可穿戴医疗设备迅速进入公众的视野中。可穿戴医疗设备可通过与人体的无缝连接,获取人体的生理健康数据,在慢性病管理、老龄化和特殊人群监护、家庭康复、突发疾病的预防等应用领域能起到至关重要的作用。文章论述了可穿戴医疗设备的发展现状,以及未来发展面临的问题并提出了改进建议。     

A new low-voltage Si-compatible electroluminescent device

Thin film direct-current electroluminescent devices with ZnS:Mn as the active light-emitting layer have been fabricated on Si wafers. The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10^-2A cm^-2dc) through the active layer. A useful luminance of 78 fL has been achieved at 48V, significantly lower voltage than for conventional ac thin film or dc powder electroluminescent devices. The structure also includes a potential energy step at the interface between SiO2and ZnS due to the difference in electron affinities which offers the possibility of hot electron injection into the active layer. The unique combination of efficient cathode emission and hot injection possible in these devices suggests that a solid state analogue of the cathode ray tube may be realizable.     

The resonant-tunneling field-effect transistor: A new negative transconductance device

A new field-effect transistor with a resonant-tunneling barrier in the gate is presented. The gate and the drain currents versus gate voltage exhibit peaks when the resonant-tunneling gate current is quenched. Thus, in addition to negative differential resistance, this structure also exhibits negative transconductance, a unique feature in an n-channel device. Also, by proper gate bias, the same resonance of the double barrier can be used to produce two peaks in the drain current versus drain voltage characteristic at nearly the same current level. This is a very desirable feature for many applications.     

Time-resolving high-intensity laser-light detectors: A possible new photoconductive device

High-power laser-light detectors belong to two main categories: integrated-response detectors (joulemeter) or time-resolving detectors (photomultiplier or high-gain fast diodes). It is shown in this paper that photoconductive materials, such as stannic oxide monocrystals, can reconcile the specifications of both categories: mechanical and thermal strength, response time, linearity, and so on.     

Three-dimensional input device with six degrees of freedom

Commodity priced PCs now come with powerful three-dimensional (3D) graphic capabilities that allow new applications to incorporate 3D interactivity. But, there are few low cost 3D input devices available for the desktop non-immersive virtual reality (VR) applications. Interactive systems that use a 3D world should ideally be complimented with a 3D input device. Such devices have previously been built mainly for immersive virtual reality systems and are not well suited for desktop systems. They are also expensive. Our device is intended to provide a low cost, intuitive full 3D input with six degrees of freedom. As well, it was to be used with the non-dominant hand, freeing the other hand for finer-motor skills to use a conventional mouse or the keyboard. We have built a prototype device that was inspired by the mechanics of the gimbal mount for a gyroscope. We used a field programmable gate array (FPGA) to provide rapid prototyping of the electronics from the sensors to the computer. Initial evaluation shows promise but also some problems together with suggestions for improvements.     

Peristaltic charge-coupled device: a new type of charge-transfer device

A new type of charge-transfer device (c.t.d.) is presented. The main difference from known c.t.d.s is that the bulk transport of majority carriers is used; this, together with a capacitive decoupling of the carriers from the electrode, yields a high transfer efficiency, possibly even up to the gigahertz range. Experiments agree with expectations.     

A new transit-time device using quantum-well injection

The use of such techniques as molecular beam epitaxy has allowed the fabrication of devices in which tunneling is the dominant transport mechanism. In this paper a new transit-time device which uses resonant tunneling through a quantum well is proposed and analyzed. Depending on the bias level, this device may permit injection of carriers into the drift region at more favorable phase angles (hence higher efficiencies) than other transit-time devices. The device promises low noise performance and should be capable of operating at high millimeter-wave frequencies with higher output power than other transit-time devices or pure quantum-well oscillators. Since the device uses quantum-well injection and transit-time effects, it is called a QWITT diode.     

Gridistor—A new field-effect device

This article concerns a new category of field effect transistors currently being developed which are derived from the Tecnetron (known as the Fieldtron in the U.S.A.) and which use the principal of centripetal striction and have a multichannel structure. By this development it is intended that the advantages of bipolar and field effect transistors be combined insofar as this is possible. In the theoretical part of the article the peculiarities of centripetal striction are discussed. It is shown that since the multichannel structure of the Gridistor removes the limitations arising from the restriction on the degrees of freedom, it eliminates the disadvantages of centripetal striction while retaining its advantages. The various geometries of the Gridistor and the techniques for realizing them are then described with particular attention to their remarkable suitability for integrated circuits. The results obtained are then given briefly and prospects for the future are outlined.     

A new device design methodology for manufacturability

As future technology generations for integrated circuits continue to “shrink”, TCAD tools must be made more central to manufacturing issues; thus, yield optimization and design for manufacturing (DFM) should be addressed integrally with performance and reliability when using TCAD during the initial product design. This paper defines the goals for DFM in TCAD simulations and outlines a formal procedure for achieving an optimized result (ODFM). New design of experiments (DOE), weighted least squares modeling and multiple-objective mean-variance optimization methods are developed as significant parts of the new ODFM procedure. Examples of designing a 0.18-μm MOSFET device are given to show the impact of device design procedures on device performance distributions and sensitivity variance profiles