Reduced crystallization time of YBCO in a fluorine-free MOD process using uv-lamp irradiation

We have studied the crystallization time dependence of the epitaxial YBCO films (t = 0.8 μm) grown on CeO₂-buffered SrTiO₃ substrates by fluorine-free metal–organic deposition using uv-lamp irradiation (uv-MOD). As increasing the time (T₀) for heat treatment at the reaction temperature (760 °C) from 0 to 90 min, J_c and the YBCO 0 0 l XRD intensity are steeply increased and reach their maximum values at T₀ = 10 min. This suggests that the heat treatment required for YBCO crystallization is significantly shortened in uv-MOD compared to conventional all-pyrolytic F-free MOD processes, which consume T₀ = 90–150 min for crystallizing 0.4–0.5-μm-thick films. Scanning electron microscope measurement revealed a drastic change in surface morphology between T₀ = 8 and 10 min, showing a good correspondence to the J_c and XRD data which suggest that the epitaxial growth reaches the film surface at the very early stage in the heat treatment.     

Structure,optical spectroscopy and dispersion parameters of ZnGa2Se4 thin films at different annealing temperatures

Thin films of ZnGa₂Se₄ were deposited by thermal evaporation method of pre-synthesized ingot material onto highly cleaned microscopic glass substrates. The chemical composition of the investigated compound thin film form was determined by means of energy-dispersive X-ray spectroscopy. X-ray diffraction XRD analysis revealed that the powder compound is polycrystalline and the as-deposited and the annealed films at T_a = 623 and 673 K have amorphous phase, while that annealed at T_a = 700 K is polycrystalline with a single phase of a defective chalcopyrite structure similar to that of the synthesized material. The unit-cell lattice parameters were determined and compared with the reported data. Also, the crystallite size L, the dislocation density δ and the main internal strain ε were calculated. Analyses of the AFM images confirm the nanostructure of the prepared annealed film at 700 K. The refractive index n and the film thickness d were determined from optical transmittance data using Swanepoel's method. It was found that the refractive index dispersion data obeys the single oscillator model from which the dispersion parameters were determined. The electric susceptibility of free carriers and the carrier concentration to the effective mass ratio were determined according to the model of Spitzer and Fan. The analysis of the optical absorption revealed both the indirect and direct energy gaps. The indirect optical gaps are presented in the amorphous films (as-deposited, annealed at 623 and 673 K), while the direct energy gap characterized the polycrystalline film at 700 K. Graphical representations of ε₁, ε₂, tan δ, ? Im[1/ε*] and ? Im[(1/ε* + 1)] are also presented. ZnGa₂Se₄ is a good candidate for optoelectronic and solar cell devices.     

Effects of growth rate and buffer-layer on Bi2Sr2CaCu2Oy thin film fabrication

The effect of the growth rate on the Bi₂Sr₂CaCu₂O_y (Bi2212) thin film quality on MgO substrate is investigated at several growth rates from 0.175 to 3 nm/min. The maximal step height on the film surface is improved from about 100 to 6 nm by the reduction of growth rate to 0.5 nm/min and simultaneously the superconducting critical temperature attaining to a zero resistance T_c(R=0), is also improved from 50 to 63 K. The surface morphologies of the upmost Bi-superconducting thin films with the intermediate layers on MgO substrate is also studied in contrast to that deposited directly on the MgO substrate.     

La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La_0.7Sr_0.3MnO₃ films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of ?5.56%, Curie temperature (T_c) of 325 K and metal insulator transition temperature (T_MI) of 278 K was achieved at room temperature.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.     

Epitaxial growth of Ce2Y2O7 buffer layers for YBa2Cu3O7−δ coated conductors using reel-to-reel DC reactive sputtering

Biaxially textured Ce₂Y₂O₇ (CYO) films were deposited on Ni–5at.%W (Ni–5W) tapes by a DC reactive sputtering technique in a reel-to-reel system. Subsequent YBa₂Cu₃O_7?δ (YBCO) films were prepared using pulsed laser deposition leading to a simplified coated conductor architecture of YBCO/CYO/Ni–5W. X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively. Microstructural investigations showed a dense, smooth and crack-free surface morphology for CYO film up to a thickness of 350 nm, implying an effective suppression of cracks due to the incorporation of Y in CeO₂. The superconducting transition temperature T_c of about 90 K with a narrow transition of 0.8 K and the inductively measured critical current density J_c of about 0.7 MA/cm² indicate the potential of the single CYO buffer layer.     

Aqueous polymer–nitrate solution deposition of YBCO films

High critical current density YBa₂Cu₃O_7?x (YBCO) films were prepared by solution deposition of aqueous non-fluorine precursors. Non-fluorine polymer-assisted deposition (PAD) processes utilizing rheology modifiers and chelating agents were used to produce 50 nm films with a critical current density (J_c) over 3 MA/cm² and 400 nm films with J_c > 1 MA/cm²_. T_c measurements indicated that films have T_c values near 90 K. The total heat treatment time to produce these high performance films was less than 4 h. Rheology modifiers such as polyvinyl alcohol (PVA) and hydroxyethyl cellulose (HEC) were used to increase the thickness of deposited films independent of the solution cation concentration. Chelating agents such as polyethylene glycol (PEG) and sucrose increased the barium ion solubility. Nitrate crystallization during deposition was controlled through rapid drying with vacuum and coating with hot solutions.     

Influence of thickness and annealing on linear and nonlinear optical properties of manganese (III) chloride tetraphenyl porphine (MnTPPCl) organic thin films

Thin films of manganese (III) chloride 5,10,15,20-tetraphenyl-21H,23H-porphine (MnTPPCl) with different film thickness were deposited by an evaporation technique. Some optical constants were calculated for these films at a thickness of 110, 220 and 330 nm and annealing temperature of 373 and 437 K. IR spectrum demonstrating that the thermal evaporation method is a good one to acquire undissociated and stoichiometric MnTPPCl films. Our perceptions demonstrate that the mechanism of the optical absorption obeys with the indirect transition. It was found that the energy gap, E_g, affected by the film thickness and annealing. Dispersion of the refractive index is described using single oscillator model. Dispersion parameters are calculated as a function of the film thickness and annealing temperature. In addition, the third-order nonlinear susceptibility, χ⁽³⁾, and the nonlinear refractive index, n₂, were calculated.     

Preparation of solution-based YBCO films with BaSnO3 particles

The YBCO films with BaSnO₃ (BSO) particles were prepared on LAO (0 0 1) substrates by metal organic deposition using trifluoroacetates (TFA-MOD) via introducing SnCl₄ powders into the YBCO precursor solution. It was found that with the increase of the SnCl₄ contents, the slower decomposition and higher temperature for nucleation during the reaction were requested compared to that of pure YBCO film. The YBCO films with different contents of Sn with dense surface and well c-alignment were obtained under optimized heat treatment, and the BaSnO₃ phases were detected by XRD analysis. Litter effect of BSO particles on the T_c and J_c values of YBCO films was found. All YBCO films with BSO particles had T_c values over 90 K and J_c values over 1 MA/cm². A significant enhancement of J_c was observed for YBCO films with BSO particles compared to that of pure YBCO film by the field dependence of J_c values. The best property was obtained for YBCO film with 6 mol.% Sn at 77 K under magnetic field. The results showed that the J_c value of YBCO film with 6 mol.% Sn was enhanced by a factor of 2 in 2 T, and over a factor of 10 beyond 4 T compared to that of pure YBCO film.     

Preparation of YBCO film for microwave filter using a hybrid route

Pure (0 0 l)-textured CeO₂ buffer layers were deposited on single crystal r-plane Al₂O₃ (1–102) substrate by a hybrid process which was combined with magnetron sputtering for the seed layer and metal–organic deposition for the subsequent layer. Strongly c-axis oriented YBCO films were deposited on the CeO₂ buffered r-cut Al₂O₃ (1–102) substrates. Atomic force microscope and scanning electronic microscopy results show that the prepared buffers and YBCO films are relatively dense and smooth. The critical current of the YBCO films exceeds 1.5 MA/cm² at 77 K with the superconducting transition temperature of 90 K. The surface resistivity is as below as 14 μΩ at 1 GHz frequency. The results demonstrate that the hybrid route is a very promising method to prepare YBCO films for microwave application, which can combine the sputtering advantage for preparing of highly c-axis oriented CeO₂ buffer layers and the advantages of metal–organic deposition with rapid processing, low cost and easy preparation of large-area YBCO films.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

Magnetic properties of nanocrystalline Fe86.7Zr3.3B4Ag6 thin film

The changes of magnetic properties with annealing temperature were studied in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film. The thin films were deposited by a DC magnetron sputtering method, annealed at 300–700°C for 1 h in vacuum under a field of 1.5 kOe parallel to the film plane, and then furnace-cooled. As a result, it has been found that the Ag addition to Fe–Zr–B amorphous thin films resulted in the decrease of crystallization temperature to 400°C due to promoted crystallization ability. Also, it gave rise to formation of fine BCC α-Fe crystalline precipitates with a grain size smaller than 10 nm in the amorphous matrix near 400°C, and led to prominent enhancement in the magnetic properties of the Fe_86.7Zr_3.3B₄Ag₆ thin films. Significantly, excellent magnetic properties such as a saturation magnetization of 1.7 T, a coercive force of 1 Oe and a permeability of 7800 at 50 MHz were obtained in the amorphous Fe_86.7Zr_3.3B₄Ag₆ thin film containing 7.2 nm-size BCC α-Fe, which was annealed at 400°C. Also, core loss of 1.4 W cm⁻³ (B_m=0.1 T) at 1 MHz in the thin film was obtained, and it is a much lower value than had been obtained in any existing soft magnetic materials. Such excellent properties are inferred to originate from the uniform dispersion of nano-size BCC α-Fe in the amorphous matrix.     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide

Submonolayer films of C₆₀ have been deposited on ultrathin SiO₂ films for the purpose of characterizing the initial stages of nucleation and growth as a function of temperature. Capture zones extracted from the initial film morphology were analyzed using both the gamma and generalized Wigner distributions. The calculated critical nucleus size i of the C₆₀ islands was observed to change over the temperature range 298 K to 483 K. All fitted values of i were found to be between 0 and 1, representing stable monomers and stable dimers, respectively. With increasing temperature of film preparation, we observed i first increasing through this range and then decreasing. We discuss possible explanations of this reentrant-like behavior.     

Temperature dependence of effective thermal conductivity and effective thermal diffusivity of Se90In10 bulk chalcogenide glass

Measurement of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) of twin pellets of Se₉₀In₁₀ bulk chalcogenide glass has been carried out in the temperature range from 303 to 323 K and cooling from 323 to 303 K using transient plane source (TPS) technique. In the heating process variation of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) is observed. Both quantities are found to be maximum at 313 K, which lies in the vicinity of glass transition temperature (T_g). During the cooling process λ_e and χ_e remain same at all temperatures. Such type of behavior shows thermal hysteresis in this sample, which can be explained on the basis of structural change of the Se₉₀In₁₀ bulk chalcogenide glass.     

Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films

Nanostructured Zn_1−xMn_xS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10⁻⁶ m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.     

The growth and field evaporation of Er and deuterated Er films

The morphological structure of clean and deuterated Er films deposited on W substrates and their removal by field evaporation have been investigated as part of a program directed toward the development of deuterium ion sources for neutron generators. Annealed Er films up to ~ 20 monolayers in thickness deposited on W < 110 > substrates appear pseudomorphic. Thicker annealed films form a hexagonal close-packed < 0001 > orientated over-layer with the Pitsch–Schrader orientation relation. The pseudomorphic and hexagonal close-packed character of the films is retained up to the last atomic layer that forms the film-substrate interface. Deuterated Er films appear polycrystalline. At 77 K in Ar, annealed Er films field evaporate at 2.5 V/Å primarily as Er^2 + and deuterated Er films evaporate at ~ 2.4 V/Å primarily as ErD_x^2 +. Field evaporation of both clean and deuterated Er films shows signs of space charge induced field lowering when film thicknesses exceeding ~ 10 layers were field evaporated using 20 ns duration voltage pulses.     

A novel selenization technique for fabrication of superconducting FeSex thin film

A combinative method with reactive sputtering deposition and selenization technique was applied to prepare superconducting FeSe_x films on LaAlO₃ substrates successfully. The influence of selenizing temperature on film components was studied. FeSe_0.96 and FeSe films had similar and good performances in transport measurement but little difference in magnetic property. The critical onset temperature got to 11.2 K and T_c,0 got to 4 K approximately. X-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy were used to analyze the ratio of constituents and morphology of several selenized films. FeSe_x film had a porous structure on surface and no well preferred orientation, which were confirmed to have little influence on superconducting properties.     

Cathodoluminescence studies of un-doped and (Cu,Fe, and Co)-doped tin dioxide films deposited by spray pyrolysis

Un-doped and (Cu, Fe, and Co)-doped SnO₂ were studied using films deposited by spray pyrolysis. Room temperature cathodoluminescence (CL) was measured. Differences in CL spectra were observed as a function of deposition parameters (T_sub-350–550 °C), the nature and concentration of dopants (0–16 at.%), and the resulting high annealing temperature (T_an = 700–950 °C). A possible luminescence mechanism has been discussed. It was established that changes taking place in CL spectra were caused by the change of both the grain size and crystallinity (stoichiometry) of the surface layer. It was concluded that radiative recombination occurs through shallow donor levels associated with O-vacancies and trapped centers. It was assumed that in SnO₂ there are apparently three types of defects forming deep levels located at 0.8–0.9, 1.3–1.4, and ∼1.6 eV from the top of the valence band.