Synthesis and characterization of sol–gel derived calcium hydroxyapatite thin films spin-coated on silicon substrate

The goal of this study was to demonstrate that sol–gel processing route is suitable for the fabrication of calcium hydroxyapatite (Ca₁₀(PO₄)₆(OH)₂, CHA) thin films on Si substrate by spin-coating technique. The substrate was spin-coated by precursor sol solution 1, 5, 15 and 30 times. The samples were annealed after each spin-coating procedure at 1000 °C for 5 h in air. In the sol–gel process ethylendiamintetraacetic acid and 1,2-ethandiol, and triethanolamine and polyvinyl alcohol were used as complexing agents and as gel network forming agents, respectively. The coatings were characterized using X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman spectroscopies, profilometry and the contact angle measurements (CAM). It was demonstrated, that properties of calcium hydroxyapatite thin films depend on spinning and annealing times.     

Structural and optical studies on sol–gel derived ZnO thin films by excimer laser annealing

High-quality polycrystalline ZnO thin films were deposited onto alkali-free glasses at a temperature of 300°C in air ambience by combining sol–gel spin coating and KrF excimer laser annealing. The effects of laser irradiation energy density on the crystallization, microstructure, surface morphology, and optical transmittance of as-prepared ZnO thin films were investigated and compared to the results of thermally annealed ZnO thin films. The crystallinity level and average crystallite size of laser annealed ZnO thin films increased as laser energy density increased. The crystallinity levels and average crystallite size of excimer laser annealed (ELA) thin films were greater than those of the thermally annealed (TA) thin films. However, laser annealed thin films had abnormal grain growth when irradiation energy density was 175 mJ/cm². Experimental results indicated that the optimum irradiation energy density for excimer laser annealing of ZnO sol–gel films was 150 mJ/cm². The ELA 150 thin films had a dense microstructure, an RMS roughness value of 5.30 nm, and an optical band gap of 3.38 eV, close to the band gap of a ZnO crystal (3.4 eV).     

Effects of annealing temperature on structure and electrical properties of sol–gel derived 0.65PMN-0.35PT thin film

0.65Pb(Mg_1/3Nb_2/3)O₃-0.35PbTiO₃ (0.65PMN-0.35PT) thin films were deposited on Pt/Ti/SiO₂/Si substrates annealed from 550 to 700 °C using sol-gel process. The effects of annealing temperature on microstructure, insulating, ferroelectric and dielectric properties were characterized. The result reveals that 0.65PMN-0.35PT thin films possess a polycrystalline structure, matching well with the perovskite phase despite the existence of a slight pyrochlore phase. The film samples annealed at all temperatures exhibit relatively dense surfaces without any large voids and the grain size increases generally with the increase of the annealing temperature. Meanwhile, pyrochlore phase is considerably generated because of the deformation of perovskite phase caused by volatilization of Pb at an excessive high-temperature. The film annealed at 650 °C exhibits superior ferroelectricity with a remanent polarization (P_r) value of 13.31 μC/cm², dielectric constant (ε_r) of 1692 and relatively low dielectric loss (tanδ) of 0.122 at 10⁴ Hz due to the relatively homogeneous large grain size of 130 nm and low leakage current of approximately 10^-6 A/cm².     

Effect of annealing temperature on ferroelectric electron emission of sol–gel PZT films

In this work, the influence of annealing temperature on the ferroelectric electron emission behaviors of 1.3-μm-thick sol–gel PbZr_0.52Ti_0.48O₃ (PZT) thin film emitters was investigated. The results revealed that the PZT films were crack-free in perovskite structure with columnar-like grains. Increasing annealing temperature led to the growth of the grains with improved ferroelectric and dielectric properties. The remnant polarization increased slightly from 35.3 to 39.6 μC/cm² and the coercive field decreased from the 56.4 to 54.6 kV/cm with increasing annealing temperature from 600 to 700 °C. The PZT film emitters exhibited remarkable ferroelectric electron emission behaviors at the threshold voltage above 95 V. The film annealed at 700 °C showed a relatively lower threshold voltage and higher emission current, which is related to the improved ferroelectric and dielectric properties at higher annealing temperature. The highest emission current achieved in this work was around 25 mA at the trigger voltage of 160 V.     

Effects of annealing temperature on the microstructure,optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method

Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550 °C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650 °C is between 2.306 eV and 2.453 eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550 °C are higher than the thin films annealed at higher temperature.     

Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol–gel BaxSr1−xTiO3 thin films

In this work, Ba_xSr_1?xTiO₃ sol–gel thin films (x = 0.7, 0.5 and 0.3) deposited on Pt/Si substrate and post-annealed at different temperatures have been investigated. A systematic study of the structure, microstructure and dielectric properties has been achieved for each composition. To our knowledge, for the first time, a systematic effect of post-deposition annealing temperature and composition is reported. For each Ba/Sr ratio, higher annealing temperature leads to crystallinity improvement and to grain growth. A shift of the ferroelectric to paraelectric transition toward the bulk Curie temperature with the increase of the annealing temperature is shown. These results are correlated with the increase of the permittivity, tunability and dielectric losses measured on MIM capacitors at low frequency. Moreover, the high frequency results, between 800 MHz and 30 GHz, are in very good agreement with low frequency measurements, and show a huge tunability up to 80% under 600 kV/cm.     

Influence of the sintering temperature on the structural feature and bioactivity of sol–gel derived SiO2–CaO–P2O5 bioglass

A sol–gel method was utilized to synthesize the gel with the composition of 58 mol% SiO₂–38 mol% CaO–4 mol% P₂O₅. The thermal properties were studied using thermogravimetric and differential thermal analysis (TG/DTA). Then the gels were sintered at 700, 900, 1000 and 1200 °C. The structure features were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM), in addition in vitro assays were carried out in simulated body fluid (SBF). The results revealed that at sintering temperature above 900 °C, crystallization occurred and glass-ceramics with pseudowollastonite and wollastonite were formed. Furthermore with the increase of sintering temperature, the amount of pseudowollastonite decreased while that of wollastonite increased. In vitro tests indicated that the crystallization did not inhibit the samples bioactivity. After soaking in SBF, the formation of apatite was confirmed on glass and glass-ceramics surface, and the bioactivity of the glass-ceramics was based on the formed pseudowollastonite and wollastonite.     

Impedance spectroscopic studies of sol–gel derived barium strontium titanate thin films

In the present work electroceramic thin films of barium strontium titanate (Ba_1?xSr_xTiO₃ – BST) were deposited on stainless steel substrates by sol–gel technique. Homogeneous Ba_0.6Sr_0.4TiO₃ thin films as well as spatially inhomogeneous BST thin films exhibiting artificial gradients in composition normal to the growth surface were deposited. Both up- and down-graded BST films were fabricated by depositing successive layers with Sr mole fraction x ranging from x = 0.5 to x = 0.3. In the present study the tool of impedance spectroscopy has been used to study the dielectric properties of BST thin films at room temperature. To analyze the impedance spectroscopy data the Nyquist (Z″ vs. Z′) plots as well as the simultaneous representation of the imaginary part of impedance and electrical modulus (Z″, M″) vs. frequency were used. Experimental data were fitted using the CNLS fitting method. Agreement between experimental and simulated data was established. The data indicated that the thin film samples fabricated can be represented by an equivalent circuit with two relaxation frequencies.     

Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV–Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200 °C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49 nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70–80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10⁻³ Ω cm.     

Powder characteristics,sintering behavior and microstructure of sol–gel derived ZTA composites

A series of alumina/zirconia composites of varying compositions of zirconia were prepared through the sol–gel technique. Precursors were calcined at different temperatures ranging from 300 to 1400°C and sintered at 1530°C for 3 h. Compacts made from the powder calcined at 950°C yielded density up to >99% of theoretical density by pressureless sintering. Pore size distribution and the densification behavior were explained with respect to calcination temperature. Microstructural analysis of the sintered compacts revealed the uniform distribution of the zirconia grains in the alumina matrix. It is also observed that the faceted intergranular zirconia grains are at the grain junctions and the corners of the alumina matrix.     

Influence of transition metal doping on the structural,optical, and magnetic properties of TiO2 films deposited on Si substrates by a sol–gel process

Transition metal (TM)-doped TiO₂ films (TM = Co, Ni, and Fe) were deposited on Si(100) substrates by a sol–gel method. With the same dopant content, Co dopants catalyze the anatase-to-rutile transformation (ART) more obviously than Ni and Fe doping. This is attributed to the different strain energy induced by the different dopants. The optical properties of TM-doped TiO₂ films were studied with spectroscopic ellipsometry data. With increasing dopant content, the optical band gap (E_OBG) shifts to lower energy. With the same dopant content, the E_OBG of Co-doped TiO₂ film is the smallest and that of Fe-doped TiO₂ film is the largest. The results are related to electric disorder due to the ART. Ferromagnetic behaviors were clearly observed for TM-doped TiO₂ films except the undoped TiO₂ film which is weakly magnetic. Additionally, it is found that the magnetizations of the TM-doped TiO₂ films decrease with increasing dopant content.     

Morphological,structural and ellipsometric investigations of Cr doped TiO2 thin films prepared by sol–gel and spin coating

Pure and chromium doped titanium dioxide (TiO₂) thin films at different atomic percentages (0.5%, 1.3% and 2.9%) have been elaborated on ITO/Glass substrates by sol–gel and spin–coating methods using titanium (IV) isopropoxide as a precursor. The surface morphology of films was investigated by scanning electron microscopy (SEM) and Atomic Force Microscopy (AFM), the structure was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and high resolution transmission microscopy (HRTEM). SEM and HRTEM show homogenous and polycrystalline films. XRD patterns indicate a phase transition from anatase to anatase-rutile leading to expand the absorption band of TiO₂ molecules around 520 cm⁻¹ in FTIR spectra. The optical constants such as the refractive index (n), the extinction coefficient (K) and the band gap (E_g) as well as the film thickness are determined using spectroscopic ellipsometry technique and Fourouhi–Blommer dispersion model. Results show three major changes; (i) the thickness of pure TiO₂ layer is 54 nm, which linearly decreases when the layer is doped with chromium and reaches 33 nm for a doping concentration of 2.9%, (ii) the band gap energy (E_g) is also linearly reduced from 3.24 eV to 2.80 eV when the Cr-doping agent increases, and, (iii) a phase transition from anatase to anatase-rutile is observed causing an increase in values of n(λ) for wavelength greater than 350 nm.     

A comparative study of the effect of Pd-doping on the structural,optical, and photocatalytic properties of sol–gel derived anatase TiO2 nanoparticles

Pd-doped anatase TiO₂ nanoparticles were synthesized by a modified sol–gel deposition technique. The synthetic strategy is applicable to other transition and post-transition metals to obtain phase-pure anatase titania nanoparticles. This is important in the sense that anatase titania forms the most hydroxyl radicals (compared to other polymorphs like rutile, brookite, etc.) for better photocatalytic performance. XRD and Raman data confirm the phase-pure anatase formation. Doping of Pd²⁺ into Ti⁴⁺ sites (for substitutional doping) or interstitial sites (for interstitial doping) creates strain within the nanoparticles and is reflected in the XRD peak broadening and Raman peak shifts. This is because of the ionic radii difference between Ti⁴⁺(∼68 pm) and Pd²⁺(∼86 pm). XPS data confirm the formation of high surface titanol groups at the nanoparticle surface and a large number of loosely bound Ti³⁺–O bonds, both of which considerably enhance the photocatalytic activity of the doped nanoparticles. A comparative study with other metal doping (Ga) shows that TiO₂: Pd nanoparticles have more Ti³⁺–O bonds, which enhance the charge transfer rate and hence improve the photocatalytic activity compared to other transition and post-transition metal-doped titania nanostructures.     

Influence of sol–gel derived ZrO2 and ZrC additions on microstructure and properties of ZrB2 composites

ZrB₂ powder was coated with 5% ZrOC sol–gel precursor and sintered by SPS. Relative densities >98% were achieved at 1800 °C with minimal grain growth and an intergranular phase of ZrC. Carbon content in the precursor determined the type of reinforcing phase and porosity of the sintered composites. XRD, SEM and EDS studies indicated that carbon deficiency resulted in ZrO₂ retention, improving ZrB₂ densification with oxide particle reinforcement. Excess carbon resulted in ZrC formation as the reinforcing phase, but could yield porosity and residual carbon at grain boundaries. These two types of ZrB₂ composites displayed different densification and microstructural evolution that explain their contrasting properties. In the extreme oxidative environment of oxyacetylene ablation, the composites with ZrC-C maintained superior leading edge geometry; whereas for mechanical strength, a bias towards the residual ZrO₂ content was beneficial. This highlighted the sensitivity of processing carbon-precursors in the initial sol–gel process and the carbon content in ZrB₂-based composite systems.     

Effect of annealing atmosphere on the structural and electrical properties of BiFeO3 multiferroic ceramics prepared by sol–gel and spark plasma sintering techniques

Phase-pure BiFeO₃ powders were synthesized by sol–gel technique. Based on these powders, high-density BiFeO₃ ceramics were prepared by spark plasma sintering (SPS) at 700 °C along with annealing for 2 and 4 h, respectively, at 650 °C under atmospheres of air and oxygen. X-ray diffraction analysis revealed that the 4 h-oxygen-annealed sample contained a single rhombohedral perovskite phase while the samples annealed in the other conditions contained small quantities of impurity phases besides the rhombohedral perovskite phase. The relative density of the 4 h-oxygen-annealed sample was about 96%, being apparently higher than that of the other samples. In comparison with the 4 h-air-annealed sample, the dielectric constant of the 4 h-oxygen-annealed sample was relatively higher. The activation energy for electrical conduction was about 1.17 eV for the 4 h-oxygen-annealed sample while it was about 0.98 eV for the 4 h-air-annealed sample, showing that the former would have a lower room-temperature conductivity (~2.6×10⁻¹⁴ S cm⁻¹) than the latter (~2.1×10⁻¹³ S cm⁻¹). It is therefore anticipated that the oxygen-annealed sample could possess better ferroelectric properties as compared to the air-annealed sample.     

The effect of laser sintering on the microstructure,relative density,and cracking of sol-gel–derived silica thin films

Combining sol-gel processing and laser sintering is a promising way for fabricating functional ceramic deposition with high dimensional resolution. In this work, crack-free silica tracks on a silica substrate with a thickness from ~360 nm to ~950 nm, have been obtained by direct exposure to a CO₂ laser beam. At a fixed scanning speed, the density and microstructures of the silica deposition can be precisely controlled by varying the laser output power. The porosity of the laser-sintered silica tracks ranged from close to 0% to ~60%. When the thickness of the silica deposition exceeded the critical thickness (eg, ~2.2 µm before firing), cracks occurred in both laser-sintered and furnace-sintered samples. Cracks propagated along the edge of the laser-sintered track, resulting in the crack-free track. However, for the furnace heat-treated counterpart, the cracks spread randomly. To understand the laser sintering effect, we established a finite element model (FEM) to calculate the temperature profile of the substrate during laser scanning, which agreed well with the one-dimensional analytical model. The FEM model confirmed that laser sintering was the main thermal effect and the calculated temperature profile can be used to predict the microstructure of the laser-sintered tracks. Combining these results, we were able to fabricate, predesigned patterned (Clemson tiger paw) silica films with high density using a galvo scanner.     

The influence of temperature and interface strength on the microstructure and performance of sol–gel silica–epoxy nanocomposites

A series of silica–epoxy nanocomposites were prepared by hydrolysis of tetraethoxysilane within the organic matrix at different processing temperatures, i.e., 25 and 60 °C. Epoxy matrices reinforced with 2.0–10.0 wt% silica were subsequently crosslinked with an aliphatic diamine hardener to give optically transparent nanocomposite films. Interphase connections between silica networks and organic matrix were established by in situ functionalization of silica with 2.0 wt% γ-aminopropyltriethoxysilane (APTS). The microstructure of silica–epoxy nanocomposites as studied by transmission electron microscopy indicated the formation of very well-matched nanocomposites with homogeneous distribution of silica at relatively higher temperatures and in the presence of APTS. Thermogravimetric and static mechanical analyses confirmed considerable increase in thermal stability, stiffness, and toughness of the modified composite materials as compared to neat epoxy polymer and unmodified silica–epoxy nanocomposites. A slight improvement in the glass transition temperatures was also recorded by differential scanning calorimetry measurements. High temperature of hydrolysis during the in situ sol–gel process not only improved reaction kinetics but also promoted mutual solubility of the two phases, and consequently enhanced the interface strength. In addition, APTS influenced the size and distribution of the inorganic domain and resulted in better performance of the modified silica–epoxy nanocomposites.     

Plasma-scan sintering of aluminosilicate sol–gel films

The high temperatures and velocities of plasma jets give them uniquely high heat transfer coefficients and the ability for extremely rapid heat transfer. These characteristics have been applied to use plasma scanning to sinter aluminosilicate films prepared by sol–gel processing. The critical thickness, up to which crack-free films can be obtained, was found to be significantly lower for plasma-scan sintering than for conventional furnace sintering. However, crack-free films above the critical thickness were produced by multiple dipping to produce individual layers below the critical thickness and plasma scanning after each dip. Multilayered aluminosilicate films deposited on steel substrates and plasma-scan sintered for 3 min at 600 °C showed the same microstructure and scratch resistance as that of conventionally furnace-sintered films after 60 min at 600 °C. A process model has been developed for the plasma-scan sintering process that can predict temperature profiles within the film–substrate system and form a basis for process control.     

Sol–gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization

We report the influence of boron doping concentration on the microstructure, electrical and optical properties of solution-processed zinc oxide (ZnO) thin films. The B doping concentration in the resultant solutions was varied from 0 to 5 at%, and the pH value of each synthetic solution was adjusted to 7.0. XRD measurements, SEM observations, and SPM examinations revealed that boron doping produced ZnO thin films consisting of a fine grain structure with a flat surface morphology. Moreover, ZnO thin films doped with B raised the texture coefficient along the (002) plane. All B-doped ZnO (ZnO:B) thin films exhibited higher transparency than that of the undoped ZnO thin film in the wavelengths between 350 and 650 nm. The optical band gap and Urbach energy of the ZnO:B thin films were higher than those of the undoped thin film. According to electrical transport characteristics, the 1% B-doped ZnO thin film exhibited the highest Hall mobility of 17.9 cm²/V s, the highest electron concentration of 1.2×10¹⁵ cm⁻³, and the lowest electrical resistivity of 2.2×10² Ω cm among all of the ZnO:B thin films.