聚焦离子束(FIB)快速制备透射电镜样品

高性能聚焦离子束系统(简称FIB)具有许多独特且重要的功能，已广泛地应用于半导体工业中。近年来，FIB在材料科学研究领域也有了广泛的应用。本文主要介绍利用FIB快速制备TEM样品的方法。实验设备为日本精工公司生产的型号为Seiko SM12200的聚焦离子束系统。     

Fabrication of silicon micro-mould for polymer replication using focused ion beam

Focused ion beam sputtering was used to fabricate microscale moulds of circular conical structures in silicon. As scan strategy, a continuous slicing method (CSM) modified from a two-dimensional (2D) slice-by-slice approach combined with a spiral scan was tested experimentally. With carefully chosen ion beam conditions and processing parameters, moulds were fabricated as a function of the ion dose for specific dwell times. Using the fabricated moulds, polymeric polydimethylsiloxane (PDMS) and polyurethane acrylate (PUA) microstructures were replicated and compared with the mould dimensions. Using PUA, the resolution of the polymer structure was examined on a nanoscale. In addition, mould-making failure due to both beam overlap and the field of view (FOV) is discussed. Finally, micro-lenses of different sizes were fabricated successfully.     

Probe modification for scanning-probe microscopy by the focused ion beam method

The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.     

Side-milling technique of preparing device cross-sections for electron holography based on a focused ion beam micro-sampling system

A new milling technique based on a focused ion beam (FIB) microsampling system is proposed to avoid the curtaining effect, commonly occurring in other FIB milling methods, in order to obtain a crosssectional device specimen with uniform thickness can be obtained for electron holographic observation.     

琼脂铸模法制备透射电镜样品

本文介绍用琼脂铸模法制备透射电镜样品，如悬浮培养细胞、细菌、蓝藻、原生动物和花粉等细小分散的生物样品。该技术不但能将这类样品高度浓缩在一个微小的空间内，而且可简化样品制备步骤，减少样品损失，提高可观察样品的信息量。     

Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling

We have developed a focused ion beam (FIB)-Ar ion-milling technique for high-resolution transmission electron microscopy. A micrometresized specimen was mounted on a cross section of metal foil of a few micrometres thick, using FIB microsampling. Following this, a 2 degrees wedgeshaped part was made in the specimen using FIB. Finally, the specimen was milled using an Ar ion beam to remove the FIB-damaged layers. We applied the FIB-Ar ion milling technique to a CeO(2)/Gd(2)Zr(2)O(7) multilayer specimen, resulting in the crystal lattice fringes of both layers being clearly observable in comparison to a specimen finished using a Ga ion beam at an accelerating voltage of 10 kV.     

聚焦离子束技术制备超薄TEM样品-X2样品台的应用

聚焦离子束技术在制备TEM样品方面得到了广泛的应用。普通传统的制样减薄方法存在远端薄区极易弯曲和薄区厚度不均匀的问题。针对存在的这些问题本文使用Zeiss公司的X2样品台采取交叉减薄的方法制备一个具有均匀的极薄的TEM样品。本文主要介绍X2样品台的工作原理和交叉减薄的实验过程,并分析了该方法在制备TEM样品时存在的优缺点以及其独特的适用性。     

Development of new TEM specimen holder for cathodoluminescence detection

A simple, new TEM specimen holder to detect cathodoluminescence (CL) in a transmission electron microscope has been developed. This holder accommodates a flat light-collecting reflector below the specimen and CL signals are guided to an optical spectrometer outside of the microscope through a quartz optical fibre. The compact system requires no modification of the microscope itself and allows large-angle specimen tilting and easy combination with other associate analytical tools. Test data are presented to aid the future application of the holder.     

Comparison of TEM specimen preparation of perovskite thin films by tripod polishing and conventional ion milling

In this article, the effects of the transmission electron microscopy (TEM) specimen preparation techniques, such as ion milling and tripod polishing on perovskite oxides for high-resolution TEM investigation, are compared. Conventional and liquid nitrogen cooled ion milling induce a new domain orientation in thin films of SrRuO(3) and LaFeO(3) grown on (001)-oriented SrTiO(3) substrates. This is not observed in tripod-polished specimens. Different ion milling rates for thin films and substrates in cross-section specimens lead to artefacts in the interface region, degrading the specimen quality. This is illustrated by SrRuO(3) and PbTiO(3) thin films grown on (001)-oriented SrTiO(3). By applying tripod polishing and gentle low-angle, low-energy ion milling while cooling the sample, the effects from specimen preparation are reduced resulting in higher quality of the TEM study. In the process of making face-to-face cross-section specimens by tripod polishing, it is crucial that the glue layer attaching the slabs of material is very thin (<50 nm).     

Prediction of nanopattern topography using two-dimensional focused ion beam milling with beam irradiation intervals

Beam irradiation intervals are a critical parameter in the fabrication of nanopatterns via focused ion beam (FIB) milling. The beam irradiation intervals are defined in terms of the overlap. In this paper, the nanopattern height on a silicon surface is predicted using a mathematical FIB milling model that varies the overlap. The proposed model takes into account the angle dependence of the sputtering yield and redeposition effect, together with the superposition of a bi-Gaussian beam. The model was verified by comparing the results of a nanopattern machining experiment to those of a simulation based on the model. The simulation calculated the final two-dimensional geometry from ion milling parameters. The results of the simulation indicate that the proposed model is more precise than one that only considers the superposition of a Gaussian beam.     

A comparison of focused ion beam and electron beam induced deposition processes

Focused ion and electron beams are used for local deposition of conducting or insulating films. Major applications are integrated circuit design edit, prototype modification, repair of masks, and machining of microsystems. In this paper, the dependence of the deposition rates versus the beam parameters for both, ion beam and electron beam induced deposition were investigated and compared with each other. At the same time, a more precise consideration of the influence of secondary electrons on the deposition process was accomplished.     

Morphological influence of the beam overlap in focused ion beam induced deposition using raster scan

Material addition using focused ion beam induced deposition (FIBID) is a well-established local deposition technology in microelectronic engineering. We investigated FIBID characteristics as a function of beam overlap using phenanthrene molecules. To initiate the localization of gas molecules, we irradiated the ion beams using a raster scan. We varied the beam overlap between ?900% and 50% by adjusting the pixel size from 300 nm to 15 nm. We discuss the changes in surface morphologies and deposition rates due to delocalization by the range effect of excited surface atoms, the divided structure by continuous effect from the raster scan, enhanced localization by discrete effect from replenished gas molecules, the competition between deposition and sputtering processes, and the change in processing time with scan speed (smaller overlap case).     

基于聚焦离子束注入的微纳加工技术研究

提出了聚焦离子束注入（focused ion beam implantation,FIBI）和聚焦离子束XeF2气体辅助刻蚀（gas assisted etching,GAE）相结合的微纳加工技术。通过扫描电镜观察FIBI横截面研究了聚焦离子束加工参数与离子注入深度的关系。当镓离子剂量大于1.4×1017ion/cm2时,聚焦离子束注入层中观察到均匀分布、直径10～15nm的纳米颗粒层。以此作为XeF2气体反应的掩膜,利用聚焦离子束XeF2气体辅助刻蚀（FIB-GAE）技术实现了多种微纳米级结构和器件加工,如纳米光栅、纳米电极和微正弦结构等。结果表明该方法灵活高效,很有发展前途。     

Crystallographic orientation contrast associated with Ga+ ion channelling for Fe and Cu in focused ion beam method

In this study, Cu and Fe single crystals are used to examine the change in secondary electron intensity associated with Ga(+) ion channelling in a focused ion beam (FIB) system. The single crystals having three different orientations are tilted with respect to the beam incidence and the resulting variation in the secondary electron intensity is measured through the variation in brightness of the crystals. It is shown that intensity minima appear at the beam directions normal to the lower indices of the crystal orientations. The appearance of the intensity minima including the magnitude of the minima is consistent with the prediction based on the event of ion channelling in the crystal and is affected by the crystal structure. The effect of background on the intensity minima is discussed in this study. It is suggested that the presence of the intensity minima may be used to identify a crystal orientation including a crystal structure.     

Systematic features of the formation of semiconductor nanostructures using a focused ion beam

The systematic features of three-dimensional nanostructure fabrication using a focused ion beam are studied. The dependence of the depth of ion-beam-modified structures on the number of etching passes for the same ion dose is revealed with the aim of achieving accurate and predictable nanostructure formation. At the qualitative level, the effect of the thermodynamic parameters of Si, GaAs, and GaN semiconductors on the results of etching is analyzed.     

双束沉积ZrO_x薄膜时O~+束流密度对其折射率的影响

双离子束技术制备薄膜有以下几个特点:(1)沉积工艺参数可分别调节、控制,相互牵制性小,因而可自动控制程序进行薄膜的制备,从而提高了重复性;(2)由于离子轰击的混合效应,薄膜与基体具有很好的结合强度;(3)离子束能量的适当选择以及辅以加热等手段,可容     

A novel one step integration of edge-emitting laser diode withmicro-elliptical lens using focused ion beam direct deposition

An edge-emitting laser diode (LD) integrated with a microlens on its emitting surface for the purpose of collimating and fiber coupling is introduced in detail in this paper. A micro-elliptical lens is adopted for the integration in terms of divergence angle in both parallel and transverse directions. The lens with dimensions of 50 μm×30 μm×4 μm is microfabricated on the emitting surface of the laser diode with operating wavelength of 635 nm directly by focused ion beam (FIB) deposition function. The SiO₂ deposition is realized by programming of the FIB machine. It is shown by test results that the focused spot size in the parallel and transverse propagation directions are 7.9 and 9.1 μm (at site of 1/e²), respectively, and the coupling efficiency of the compact and miniaturized system can reach as high as 71%. Measured far-field angles (full angle) with the microlens in both parallel and transverse directions are 2.2° and 1.2°, respectively. Compared with the original divergence angles of 31° and 14° without the micro-elliptical lens, they were greatly reduced by this method     

Spectral engineering of terahertz quantum cascade lasers using focused ion beam etched photonic lattices

Focused ion beam etching has been used to introduce one-dimensional photonic lattices, of periods 9.11, 9.24, 9.44 /spl mu/m, between the cleaved facets of three 4.44 THz Fabry-Perot quantum cascade lasers. Singlemode lasing has been achieved at precisely defined wavelengths of 67.59, 68.48, 70.00 /spl mu/m, respectively.     

Electron beam testing of VLSI circuits assisted by focused ion beam etching

Electron beam testing assisted by focused ion beam etching was examined. Before electron beam testing (EB testing), a small window was made in the passivation film by focused ion beam etching (FIB etching). EB testing was performed through this window. This method was useful because charge buildup on the passivation film is avoided during EB testing. The threshold voltage shift caused by FIB etching was permitted until the residual film thickness on the gate electrode became 0.5μm. This technique was applied to measure the internal voltage waveform of the 256K bit dynamic RAM and confirmed that it was effective for functional testing and failure analysis of VLSI circuits.