Enhanced thermal conductivity in Si3N4 ceramic by addition of a small amount of carbon

In order to fabricate Si₃N₄ ceramic with enhanced thermal conductivity, 93 mol%α-Si₃N₄-2 mol%Yb₂O₃-5 mol%MgO powder mixture was doped with 5 mol% carbon, and sintered firstly at 1500 °C for 8 h and subsequently at 1900 °C for 12 h under 1 MPa nitrogen pressure. During the first-step sintering, the carbothermal reduction process significantly reduced the oxygen content and increased the N/O ratio of intergranular secondary phase, resulting in the precipitation of Yb₂Si₄O₇N₂ crystalline phase, higher β-Si₃N₄ content and larger rod-like β-Si₃N₄ grains in the semi-finished Si₃N₄ sample. After the second-step sintering, the final dense Si₃N₄ product acquired coarser elongated grains, lower lattice oxygen content, tighter Si₃N₄-Si₃N₄ interfaces and more devitrified intergranular phase due to the further carbothermal reduction of oxynitride secondary phase. Consequently, the addition of carbon enabled Si₃N₄ ceramic to gain a significant increase of ∼25.5% in thermal conductivity from 102 to 128 W∙m⁻¹ K⁻¹.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

Electrical resistivity of Si3N4 ceramics with Yb2O3 additive

Si₃N₄ ceramics with excellent mechanical properties are used for heat dissipation substrates and so on. In order to improve their reliability and expand their application fields, it is desirable to understand and control the electrical properties of Si₃N₄ ceramics. In this study, the electrical resistivity of Si₃N₄ ceramics with Yb₂O₃ additive was investigated by applying various voltages at temperatures ranging from 25°C to 300°C. When Yb₂O₃ was added as a sintering aid to Si₃N₄ ceramics, a crystalline J-phase (Yb₄Si₂O₇N₂) was formed and their electrical resistivity was significantly lower than that of Y₂O₃ additive. The electrical resistivity of the Yb₂O₃-added ceramics decreased with an increase in temperature and applied voltage. Yb existed in multiple valence states, Yb²⁺ and Yb³⁺, in the Si₃N₄ ceramics and the decrease in the electrical resistivity can be attributed hopping conduction through the J-phase. The J-phase in the Si₃N₄ ceramics was observed to be continuous, and percolation analysis suggested that the J-phase formed an infinite cluster. Therefore, the decrease in the electrical resistivity of the Yb₂O₃-added Si₃N₄ ceramics was found mainly to result from the formation of an infinite cluster of J-phase, which exhibits hopping conduction.     

Microstructure and thermal conductivity of gas-pressure-sintered Si3N4 ceramic: the effects of Y2O3 additive content

Si₃N₄ ceramics were sintered at 1900 °C under a nitrogen pressure of 1 MPa using Y₂O₃-MgO additives. The effects of Y₂O₃ content (0.5-4 mol%) on microstructure and thermal conductivity were systematically investigated. The increasing Y₂O₃ content led to increases in amount and viscosity of liquid phase during sintering, which induced a “bimodal to normal” transition in distribution of grain size, decreased Si₃N₄/Si₃N₄ contiguity and enhanced devitrification degree of intergranular phase in sintered bulks. Moreover, the decreasing Y₂O₃ content was found to improve the elimination efficiency of SiO₂ impurity during sintering, resulting in lower lattice oxygen content in densified specimens. The microstructure had a strong effect on thermal conductivity. The samples sintered for 3 h gained an increase of thermal conductivity from 65 to 73 W·m^-1 K^-1 with increasing Y₂O₃ content, while the samples sintered for 12 h obtained a substantial increase of thermal conductivity from 87 to 132 W·m^-1 K^-1 with decreasing Y₂O₃ content.     

Fabrication of Si3N4 ceramics substrates with high thermal conductivity by tape casting and gas pressure sintering

In this paper, high thermal conductivity Si₃N₄ ceramics were successfully fabricated through exploring and optimizing the tape casting process. The impact of various organic additives on the rheological characteristics of Si₃N₄ slurry was explored, and the pore size distribution and microstructure of the green tapes at different solid loadings were investigated, as well as the microstructure of Si₃N₄ ceramics. Green tapes with a narrow pore size distribution, a small average pore size, and a high density of 1.88 g cm⁻³ were prepared by the investigation and optimization of the Si₃N₄ slurry formulation. After gas pressure sintering, Si₃N₄ ceramics with a density of 3.23 g cm⁻³, dimensions of 78 mm × 78 mm, and a thickness of 0.55 mm were obtained. The microstructure of the Si₃N₄ ceramics showed a bimodal distribution and a low content of glassy phases. The thermal conductivity of the Si₃N₄ ceramics was 100.5 W m⁻¹ K⁻¹, the flexural strength was 735 ± 24 MPa, and the fracture toughness was 7.17 MPa m^1/2.     

Enhanced thermal conductivity and flexural strength of sintered reaction-bonded silicon nitride with addition of (Y0.96Eu0.04)2O3

Sintered reaction-bonded silicon nitride (SRBSN) with high thermal conductivity was obtained using (Y_0.96Eu_0.04)₂O₃ and MgO as sintering additives. Green compacts were nitrided at 1400°C for 4 h. Post-sintering was carried out at 1850 and 1900°C for 4 h, respectively. In reaction-bonded silicon nitride (RBSN) doped with Y₂O₃ and MgO, the β-Si₃N₄ content and nitridation degree were 51.1% and 93.8%, respectively. However, the β-Si₃N₄ content and nitridation degree were 72.6% and 96.7% in a nitrided compact doped with (Y_0.96Eu_0.04)₂O₃ and MgO. After post-sintering, the phase composition, microstructure, mechanical properties, and thermal conductivity were investigated. After sintering at 1900°C for 4 h, the thermal conductivity of SRBSN doped with (Y_0.96Eu_0.04)₂O₃ and MgO was increased by 16.5% compared to that of the samples doped with Y₂O₃ and MgO. The highest hardness of 1639 HV and the good flexural strength of 776.4 MPa were also achieved in the sample doped with 2-mol.% (Y_0.96Eu_0.04)₂O₃ and 5-mol.% MgO.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Microstructure evolution of Si3N4 ceramics with high thermal conductivity by using Y2O3 and MgSiN2 as sintering additives

Silicon nitride (Si₃N₄) ceramics were prepared by gas-pressure sintering using Y₂O₃–MgSiN₂ as a sintering additive. The densification behavior, phase transition, and microstructure evolution were investigated in detail, and the relevance between the microstructure and the performance (including thermal conductivity and mechanical properties) was further discussed. A significant change from a bimodal to a homogeneous microstructure and a decreased grain size occurred with increasing Y₂O₃–MgSiN₂ content. When the small quantity of preformed β-Si₃N₄ nuclei grew preferentially and rapidly in a short time, an obvious bimodal microstructure was obtained in the sample with 4 mol% and 6 mol% Y₂O₃–MgSiN₂. When more β-Si₃N₄ nuclei grew at a relatively rapid rate, the sample with 8 mol% Y₂O₃–MgSiN₂ showed a microstructure consisting of numerous abnormally grown β-Si₃N₄ grains and small grains. When more β-Si₃N₄ nuclei grew simultaneously and slowly, there was a homogeneous microstructure and smaller grains in the sample containing 10 mol% Y₂O₃–MgSiN₂. Benefitting from the completely dense, significant bimodal microstructure, low grain boundary phase, and excellent Si₃N₄–Si₃N₄ contiguity, the sample containing 6 mol% Y₂O₃–MgSiN₂ exhibited great comprehensive performance, with a maximum thermal conductivity and fracture toughness of 84.1 W/(m⋅K) and 8.97 MPa m^1/2, as well as a flexural strength of 880.2 MPa.     

Investigation on thermal conductivity and mechanical properties of Si3N4 ceramics via one-step sintering

High thermal conductivity Si₃N₄ ceramics were fabricated using a one-step method consisting of reaction-bonded Si₃N₄ (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)^-1 and 12.0 MPa m^1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si₃N₄ phase was observed, which can effectively confine O atoms into the β-Si₃N₄ lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si₃N₄ ceramics with a good combination of thermal conductivity and mechanical properties.     

Synthesis of well‐dispersed β‐Si3N4 with equiaxed structures using carbothermal reduction–nitridation method

Well‐dispersed β‐Si₃N₄ powders with a novel equiaxed structure and eminent crystal integrity were prepared by carbothermal reduction–nitridation (CRN) strategy with the assistance of CaF₂ additive. The growth mechanism of Si₃N₄ particles in the CRN process was elucidated. It is proposed that the liquid phase formed by SiO₂ and CaF₂ additive is crucial to the formation of equiaxed β‐Si₃N₄, and with an appropriate content of CaF₂, Si₃N₄ powders with pure β phase, superior dispersity and crystal integrity can be obtained.     

常压烧结Si3N4-MgO-Y2O3-CeO2陶瓷的研究

本研究了Si3N4-MgO—Y2O3-CeO2陶瓷的烧结过程和微观结构,常压烧结氮化硅陶瓷的致密化主要通过液相烧结实现。微观分析结果表明,氮化硅烧结体的显微结构为等轴状的α—Si3N4和长柱状的β—Si3N4相互交织,这种结构有利于提高烧结体的强度和韧性。     

Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

Si₃N₄ ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si₃N₄ with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si₃N₄ particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si₃N₄ ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si₃N₄ compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m^?1·K^?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates.     

Enhanced thermal conductivity in Si3N4 ceramics by carbonizing polydopamine coatings

To enhance the thermal conductivity of Si₃N₄, a polydopamine (PDA) coating was creatively introduced into ceramics sintered with different additive contents through a two-step sintering process consisting of a first treatment at 1500 °C for 8 h followed by 12 h at 1900 °C under 1 MPa nitrogen pressure. After the first-step sintering, the PDA-coated sample exhibited a higher elimination effect of the liquid phase and an increase in the N/O ratio, which allowed the additives to directly interact with the Si₃N₄ grains, resulting in a microstructure with more and larger rod-shaped grains. After the second-step sintering, the densified samples of the PDA-coating attained slightly coarser rod-shaped grains, lower O content, higher N/O ratio and peak intensity (XRD) of the Y₂Si₃O₃N₄ phase, thicker grain boundary film, and secondary phases mainly residing in multigrain junctions. Consequently, the thermal conductivity of all the PDA-coated samples typically showed a 10–12% increment in comparison to the PDA-free samples for each additive content.     

Synthesis and growth mechanism of approximate spherical β‐Si3N4 particles via carbothermal reduction‐nitridation method

In this work, an efficient carbothermal reduction‐nitridation (CRN) strategy was rationally designed to directly synthesize β‐Si₃N₄ powders with eminent dispersity and granularity uniformity. With the aid of CaO additive, the obtained β‐Si₃N₄ particles were endowed with approximate spherical morphology and smooth surface. The size of β‐Si₃N₄ particles could be regulated in submicro and microscale by altering N₂ pressures. More significantly, the underlying growth mechanism of the β‐Si₃N₄ under elevated N₂ pressure was comprehensively analyzed and tentatively put forward. Benefiting from the remarkable merits, the as‐synthesized β‐Si₃N₄ powders showed great potential for alternative fillers in the application of high thermal conductivity plastic packages.     

A novel method of strong and tough Si3N4 ceramic from the particle-stabilized foam

The brittleness of Si₃N₄ ceramics has always limited its wide application. In this paper, Si₃N₄ ceramics were prepared based on foam. Combining the unique honeycomb structure of the ceramic foams and the self-toughening mechanism of Si₃N₄, the strengthening and toughening of Si₃N₄ ceramics can be further achieved by adjusting the microstructure of Si₃N₄ ceramic foams. The powder particles are self-assembled by particle-stabilized foaming to form a foam body with a honeycomb structure. It was pretreated at different temperatures (1450–1750°C). The microstructure evolution of foamed ceramics at different pretreatment temperatures and the conversion rate of α-Si₃N₄ to β-Si₃N₄ at different pretreatment temperatures were explored. Then the foamed ceramics with different microstructures are hot-press sintered to prepare Si₃N₄ dense ceramics. The effects of different microstructures of foamed ceramics on the strength and toughness of Si₃N₄ ceramics were analyzed. The experimental results show that the relative density of Si₃N₄ ceramics prepared at a particle pretreatment temperature of 1500°C is 97.8%, and its flexural strength and fracture toughness are relatively the highest, which are 1089 ± 60 MPa and 12.9 ± 1.3 MPa m^1/2, respectively. Compared with the traditional powder hot-pressing sintering, the improvement is 21% and 33%, respectively. It is shown that this method of preparing Si₃N₄ ceramics based on foam has the potential to strengthen and toughen Si₃N₄ ceramics.     

Synthesis and growth mechanism of single crystal β‐Si3N4 particles with a quasi‐spherical morphology

Single‐crystal β‐Si₃N₄ particles with a quasi‐spherical morphology were synthesized via an efficient carbothermal reduction‐nitridation (CRN) strategy. The β‐Si₃N₄ particles synthesized under an N₂ pressure of 0.3 MPa, at 1450°C and with 10 mol% unique CaF₂ additives showed good dispersity and an average size of about 650 nm. X‐ray photoelectron spectroscopy analysis revealed that there was no SiC or Si–C–N compounds in the β‐Si₃N₄ products. Selected‐area electron‐diffraction pattern and high‐resolution image indicated single crystalline structure of the typical β‐Si₃N₄ particles without an obvious amorphous oxidation layer on the surface. The growth mechanism of the quasi‐spherical β‐Si₃N₄ particles was proposed based on the transmission electron microscopy and energy dispersive X‐ray spectroscopy characterization, which was helpful for controllable synthesis of β‐Si₃N₄ particles by CRN method. Owing to the quasi‐spherical morphology, good dispersity, high purity, and single‐crystal structure, the submicro‐sized β‐Si₃N₄ particles were promising fillers for preparing resin‐based composites with high thermal conductivity.     

Texture,microstructures, and mechanical properties of AlN‐based ceramics with Si3N4–Y2O3 additives

Textured AlN‐based ceramics with improved mechanical properties were prepared by hot pressing using Si₃N₄ and Y₂O₃ as additives. The introduction of Si₃N₄–Y₂O₃ into AlN matrix led to the formation of secondary Y₃AlSi₂O₇N₂ and fiber‐like 2H^δ AlN‐polytypoid phases, the partial texture of all crystalline phases, and the fracture mode change from intergranular to transgranular. Consequently, Vickers hardness, fracture toughness and flexural strength of AlN‐based ceramics by the replacement of Y₂O₃ by Si₃N₄–Y₂O₃ increased significantly from 10.4±0.3 GPa, 2.4±0.3 MPa m^½ and 333.3±10.3 MPa to 14.2±0.4 GPa, 3.4±0.1 MPa m^½ and 389.5±45.5 MPa, respectively.     

Laser-induced metallization of porous Si3N4 ceramic and its brazing to TiAl alloy

The poor wettability of traditional brazing filler alloys on the surface of ceramics always lead to the formation of defects in the joints and weaken the bonding strength eventually, especially the porous ceramics. Metallization on ceramics is an effective way to improve the wettability. In this work, laser-induced cladding process was applied to metalize the surface of porous Si₃N₄ ceramic, and the traditional AgCu eutectic filler alloy can wet on the metalized surface completely. The metalized porous Si₃N₄ ceramic brazed to TiAl alloy successfully using AgCu filler alloy. The interfacial microstructure and mechanical property of the porous Si₃N₄/TiAl alloy brazed joint was significantly improved by the novel laser-induced metallization process.     

Novel polycarbosilazanes with Si?C and Si?N bonds in the main chain

Novel polycarbosilazanes possessing Si–CH₂ Si N linkage in their backbone are described. Their preparation involves thermal cross-linking of poly[(dimethylsilylene)-co-(1,3-dimethyl-1,3-disilazane)]s at 300 350 C. Thus, under controlled conditions, soluble and fusible preceramic polymrs were obtained. Upon pyrolysis, these materials gave good yields of silicon carbonitride-based ceramics containing low free carbon percentages and controlled nitrogen proportions.     

Sintered reaction-bonded silicon nitrides with high thermal conductivity: The effect of the starting Si powder and Si3N4 diluents

Silicon nitride ceramics with high thermal conductivity were fabricated by employing the reaction bonding method. It was revealed that the addition of Si₃N₄ diluents affected both the nitriding reaction and the post-sintering behavior by changing the size of the silicon particle during the milling process. The reduced size of silicon particle led to an increased degree of nitridation. Further, narrower pore channels in the nitrided bodies caused by the reduced size of silicon particle enhanced the final density, by promoting the easier elimination of finer pores during post-sintering. The positive effect of the finer silicon particle was confirmed by a back-up experiment employing a variety of silicon particle sizes, produced by milling the raw silicon powder for different milling times. Thermal conductivity was dominated by material density rather than variation of the microstructure or oxygen content in the current research.