Damage creation in ion irradiated Si1−xGex/Si structures

Strained SiGe/Si structures have been proposed as substrates for fabrication of high speed metal oxide semiconductor transistors. However, influence of strain and/or presence of Ge atoms on damage creation during ion irradiation have not been explored to a significant extent. In this study, Rutherford backscattering spectrometry (RBS) was used to characterize Si_1−xGe_x/Si structures irradiated by 140 keV He⁺ ions at room temperature. When compared with pure Si, strained samples show enhanced damage accumulation as a function of He fluence. Channeling angular scans did not reveal any specific configuration of displacements. Possible mechanisms for enhanced damage in strained Si are discussed.     

Optical properties of InxGa1−xP/InP grown at high fluence Ga implantation on InP using focused ion beam

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga⁺ ions with fluences of 1 × 10¹⁶-1.5 × 10¹⁷ cm⁻² followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga⁺-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In_xGa_1−xP phase is formed at a critical fluence of 7 × 10¹⁶ cm⁻². The newly grown phase was identified with the appearance of Ga rich TO_InP and In rich TO_GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.     

Flux dependent MeV ion induced modification of nano-Ag/Si system

Thin films of Ag (1.5 nm thick) are grown on Si (1 1 1) substrates using evaporation method in high vacuum condition and due to non-wetting nature of silver, isolated islands of mean size ≈12.0 nm have been formed on the surface. Au²⁺ (1.5 MeV) ions have been used to irradiate the above systems at various fluences (5 × 10¹³-1 × 10¹⁵ cm⁻²) at an impact angle of 5° and at a flux of 6.3 × 10¹² cm⁻² s⁻¹ (corresponding to a beam current density of 2.0 μA cm⁻² for Au²⁺ ions). Ion beam induced embedding is observed to begin at a fluence of 1 × 10¹⁴ cm⁻² for this high flux whereas low flux irradiations (current density ≈ 0.02 μA cm⁻²) of Au²⁺ ions under similar irradiation conditions did not yield embedding (impact angle 5°). High resolution transmission electron microscopy measurement showed no mixing in the form of silicide formation. These results are compared with high flux modifications in Au/Si system.     

Structural characterization of Nd-doped Hf-zirconolite Ca1−xNdxHfTi2−xAlxO7 ceramics

Because of its high incorporation capacity and of the high thermal neutron capture cross-section of hafnium, Hf-zirconolite (CaHfTi₂O₇) ceramic can be envisaged as a potential waste form for minor actinides (Np, Am, Cm) and plutonium immobilization. In this work, Nd-doped Hf-zirconolite Ca_1−xNd_xHfTi_2−xAl_xO₇ (x = 0; 0.01 and 0.2) ceramics have been prepared by solid state reaction. Neodymium has been used as trivalent actinide surrogate. The ceramic samples structure has been studied by X-ray diffraction and refined by the Rietveld method. This revealed that Nd³⁺ ions only enter the Ca site, whereas part of Hf⁴⁺ ions substitute titanium into Ti(1) sites and Al³⁺ ions mainly occupy the Ti(2) split sites and Ti(3) sites of the zirconolite structure. Using various spectroscopic techniques (electron spin resonance, optical absorption and fluorescence), the environment of Nd³⁺ cations in Hf-zirconolite has been studied and compared with that of Nd³⁺ cations in Zr-zirconolite (CaZrTi₂O₇). Different local environments of Nd³⁺ cations have been detected in Hf-zirconolite that can be attributed to the existence of an important disorder around Nd in the Ca site probably due to the statistical occupancy of the next nearest cationic site of neodymium (a split Ti site) by Ti⁴⁺, Al³⁺ cations and vacancies. No significant differences were observed concerning Nd³⁺ cations environment and distribution in Hf- and Zr-zirconolite ceramics.     

Modeling the thermochemical behavior of AmO2−x

A thermochemical representation of the fluorite structure AmO_2−x phase was developed using the compound energy formalism approach assuming constituents of (Am⁴⁺)₁(O²⁻)₂, (Am⁴⁺)₁(Va)₂, (Am³⁺)₁(O²⁻)₂, and (Am³⁺)₁(Va)₂. The Gibbs free energies for the constituents and a set of interaction parameters were determined using reported oxygen potential-temperature-composition data. A good fit to the experimental information was obtained which well-reproduces the behavior. The representation is also in a format that will allow incorporation of other dissolved metals and thus will be useful in generating multi-component compound energy formalism representations for complex oxide nuclear fuel and waste systems. A full assessment relating the fluorite structure phase to the phase equilibria for Am-O, however, must await adequate data for the remainder of the system.     

Synthesis of nanodimensional TiO2 thin films using energetic ion beam

Nanophases of TiO₂ are achieved by irradiating polycrystalline thin films of TiO₂ by 100 MeV Au ion beam at varying fluence. The surface morphology of pristine and irradiated films is studied by atomic force microscopy (AFM). Phase of the film before and after irradiation is identified by glancing angle X-ray diffraction (GAXRD). The blue shift observed in UV-vis absorption edge of the irradiated films indicates nanostructure formation. Electron spin resonance (ESR) studies are carried out to identify defects created by the irradiation. The nanocrystallisation induced by SHI irradiation in polycrystalline thin films is studied.     

Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Oxygen potential measurements of Am0.5Pu0.5O2−x by EMF method

The dependence of the oxygen potentials on oxygen non-stoichiometry and temperature of Am_0.5Pu_0.5O_2−x has been obtained by the electromotive force (EMF) method with the cell: (Pt) air |Zr(Ca)O_2−x| Am_0.5Pu_0.5O_2−x (Pt). The x value of Am_0.5Pu_0.5O_2−x was changed at 1333 K over 0.02 < x ? 0.25 by the coulomb titration method. The temperature dependence of the oxygen potential was also measured over the range of 1173-1333 K. It was found that the oxygen potential decreased from −80 to −360 kJ mol⁻¹ with increasing x from 0.021 to 0.22 at 1333 K and that it remained almost constant at −360 kJmol⁻¹ around x = 0.23. It was concluded that Am_0.5Pu_0.5O_2−x should be composed of the single fluorite-type phase over 0.02 < x ? 0.22 and the mixed phases of fluorite-type and (Am, Pu)₉O₁₆ at around x = 0.23.     

Light ion irradiation effects on stuffed Lu2(Ti2−xLux)O7−x/2 (x = 0, 0.4 and 0.67) structures

We have recently synthesized “stuffed” (i.e., excess Lu) Lu₂(Ti_2−xLu_x)O_7−x/2 (x = 0, 0.4 and 0.67) compounds using conventional ceramic processing. X-ray diffraction measurements indicate that stuffing more Lu³⁺ cations into the oxide structure leads eventually to an order-to-disorder (O-D) transition, from an ordered pyrochlore to a disordered fluorite crystal structure. At the maximum deviation in stoichiometry (x = 0.67), the Lu³⁺ and Ti⁴⁺ ions become completely randomized on the cation sublattices, and the oxygen “vacancies” are randomized on the anion sublattice. Samples were irradiated with 400 keV Ne²⁺ ions to fluences ranging from 1 × 10¹⁵ to 1 × 10¹⁶ ions/cm² at cryogenic temperatures (∼77 K). Ion irradiation effects in these samples were examined by using grazing incident X-ray diffraction. The results show that the ion irradiation tolerance increases with disordering extent in the non-stoichiometric Lu₂(Ti_2−xLu_x)O_7−x/2.     

Compactibility and sintering behavior of nanocrystalline (Th1−xCex)O2 powders synthesized by co-precipitation process

Thoria (ThO₂) based ceramic material is a versatile and very important matrix for immobilization of plutonium and other tetravalent actinides either as a burning or a deposition material for final disposal. The aim of this study was to investigate the influence of the actinide concentration (simulated with cerium), the fabrication conditions and the properties of the produced powders on the compactibility and sinterability of the final products. The (Th_1−xCe_x)O₂ powders with ceria concentration varying from 5 to 50 mol% were synthesized by co-precipitation method. The pellets were then compacted from calcined and ground powders at pressures varying from 250 to 750 MPa. The produced pellets had a homogenous grain size and sintered densities of 0.88% to 0.95% TD, respectively.     

Study of H loss from hydrogenated Hg1−xCdxTe under high electronic excitation by elastic recoil detection analysis (ERDA)

Large erosion (∼1.1 × 10⁴ atoms/ion) of H from hydrogenated MCT wafers is observed due to the bombardment with 80 MeV Ni⁹⁺ ions. The initial H areal concentration and hydrogen depletion rate is monitored by elastic recoil detection analysis. The ion-damaged zones from where depletion of H takes place have been calculated from fluence-dependent hydrogen areal content analysis. The results are explained on the basis of the thermal spike model of ion-solid interaction.     

Ion beam characterization of rf-sputter deposited AlN films on Si(1 1 1)

Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c- or a-axis orientation. The composition, film thickness, impurities and stress are considered to be factors affecting the orientation and have been analyzed by Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and XRD. Their effects on the film growth will be discussed. Surface morphology of the films will be also presented.     

Phase diagram analysis of (U,Pu)O2−x sub-system

The high plutonium, hypo-stoichiometric fuel exists as two phase system at low temperatures. The partial phase diagram of (U,Pu)O_2−x with two coexisting cubic phases was extensively investigated in this work using theoretical models. The critical temperature of the miscibility gap varies with Pu/M and O/M of the system. Based on the similar miscibility gap behaviour observed in PuO_2−x system and the experimental data available on the phase boundaries of (U,Pu)O_2−x for various Pu/M, some semi-empirical relationships and solution models were developed. With the help of these relationships, ternary isothermal sections of the miscibility gap, O/M at different temperatures and the critical temperature of the miscibility gap of (U,Pu)_2−x for different Pu/M values were calculated. These calculated values were compared with the available literature data.     

Thickness and MeV Si ions bombardment effects on the thermoelectric properties of Ce3Sb10 thin films

The three single layer Ce₃Sb₁₀ thin films were grown on silicon dioxide and quartz (suprasil) substrates with thicknesses of 297, 269 and 70 nm using ion beam assisted deposition (IBAD) technique. The high-energy cross plane Si ion bombardments with constant energy of 5 MeV have been performed with varying fluence from 1 × 10¹², 1 × 10¹³, 1 × 10¹⁴, 1 × 10¹⁵ ions/cm². The Si ions bombardment modified the thermoelectric properties of films as expected. The fluence and temperature dependence of cross plane thermoelectric parameters that are Seebeck coefficient, electrical and thermal conductivities were determined to evaluate the dimensionless figure of merit, ZT. Rutherford backscattering spectrometry (RBS) enabled us to determine the elemental composition of the deposited materials and layer thickness of each film.     

New conductive copolymer membranes via track-etched PC templates for biological media ultra-filtration

New microstructurated copolymer membranes have been synthesized using a track-etched polycarbonate (PC) matrix. These membranes proved to be an important device in the field of ultra-filtration and synthetic membranes. These novel structures were obtained by irradiating at various angles (+30°, −30°). Such architecture is expected to improve not only the exchange properties but also, the behaviour under high flow pressure during their use as nanofiltration membranes. Membrane functionalization was performed with an amino acid as a simple biological model. Transmission and ATR-FTIR spectroscopies show that the doping state of copolymer dramatically influences the amino acid coupling rate. UV-vis spectroscopy indicates that the copolymer may be self-doped.     

EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors

Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn₃O₄ and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms.     

Lattice parameters of (U, Pu, Am, Np)O2−x

The solid solutions of (U_{1−z−y’−y”}Pu_zAm_y’Np_y”)O_2−x (z = 0-1, y’ = 0-0.12, y” = 0-0.07) were investigated by X-ray diffraction measurements, and a database for the lattice parameters was updated. A model to calculate the lattice parameters was derived from the database. The radii of the ions present in the fluorite structure of (U, Pu, Am, Np)O_2−x were estimated from the lattice parameters measured in this work. The model represented the experimental data within a standard deviation of σ = ±0.025%.     

Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses

Layered Al₂O₃/HfO₂ structures were deposited on Si by atomic layer deposition and the atomic transport during rapid thermal annealing was investigated by low energy ion scattering, medium energy ion scattering and narrow nuclear resonant reaction profiling. The structures were dissociated during annealing by different mechanisms, such as interdiffusion of the layers and metal loss from the dielectric. The possible detrimental effects on device electrical properties of the observed decomposition are discussed.     

Fabrication and characterisation of U0.85Am0.15O2−x discs for MARIOS irradiation program

This paper describes the developments and results of the fabrication of Am bearing blankets for the MARIOS experiment in the High Flux Reactor (HFR, Petten). This irradiation program aims to asses the influence of the microstructure on the helium release and then fuel swelling for different irradiation temperatures during heterogeneous transmutation mode. In this context, two types of microstructures, dense and tailored porosity, were investigated. The materials were fabricated by a pelletizing-sintering process in the ATALANTE facility. Moreover, dedicated tools were developed to respect the specifications imposed by the program. The results of fabrication indicate that the characteristics of the discs are within the specifications except for open porosity ratio which remains too high for the dense materials.