High pressure and time resolved luminescence spectra of Gd3Ga5O12:Pr crystal

Luminescence spectra and time resolved luminescence spectra of GGG crystal doped with Pr³⁺ were measured at high hydrostatic pressure from ambient to 220 kbar. Effect of pressure results in the red shift of all luminescence lines related to Pr³⁺ ion emission equals from −0.32 to −1.02 cm⁻¹/kbar and in the diminishing of the luminescence lifetimes. The luminescence decay related to emission from ³P₀ state was single-exponential and diminished with pressure from 23 μs at ambient pressure to 6.5 μs at 165 kbar. Luminescence decay related to transition form ¹D₂ state was two-exponential with longer decay equal to 162 μs at ambient pressure and 120 μs at 165 kbar. We discussed effect of pressure on the ¹D₂ → ³H₄ luminescence and emission from ³P₀ state in the context of non-radiative processes that depopulate the ³P₀ and populate the ¹D₂ state, considering mainly multiphonon relaxation processes and depopulation via the praseodymium trapped exciton state.     

Preparation and luminescence properties of nanocrystalline La2O3:Eu phosphor

Powders La₂O₃ doped with 1 mol% Eu were prepared via a combustion route using different reducers (urea, glycine and citric acid). The structure and morphology were determined with XRD and HRTEM measurement. The main emission positions centered at 626 nm for ⁵D₀ → ⁷F₂ transition are observed. The variation of CT band with different reducers is observed. The intensity of ⁵D₀ → ⁷F₂ transition centered at 626 nm with respect to that of ⁵D₀ → ⁷F₁ transition is a function of the energy difference ΔE between the two CT band positions.     

Basic study of single crystal fibers of Pr:Lu3Al5O12 scintillator for gamma-ray imaging applications

Single-crystalline fibers were grown from 0.25, 0.70, and 1.50 mol% Pr-doped Lu₃Al₅O₁₂ (LuAG) melts by the micro-pulling down (μ-PD) method with a diameter of 0.3-0.5 mm and a length of about 200 mm. They were cut to 10 mm long specimens, and their scintillation properties, including light yield and decay time profile, were examined. These results were compared with corresponding properties of the specimens (0.8×0.8×10 mm³) cut from the bulk crystals produced by conventional Czochralski (CZ) growth. The μ-PD-grown fibers demonstrated relatively low light yield and had the same decay time constant when compared with those of the samples cut from the CZ-grown crystals. The fiber crystals were used to assemble scintillating arrays with dimensions of Ø 0.5×10 mm²×20 pixels and Ø 0.3×10 mm²×30 pixels coated by a BaSO₄ reflector. After optical coupling with a position sensitive photomultiplier tube, the fiber-based arrays demonstrated acceptable imaging capability with a spatial resolution of about 0.5 mm.     

Improved luminescence from Y2Sn2O7:Tb nanoparticles co-doped with Sb ions

Very small nanoparticles (size 3-5 nm) of Y₂Sn₂O₇, Y₂Sn₂O₇:Tb³⁺ and Sb³⁺ co-doped Y₂Sn₂O₇:Tb³⁺ were prepared at a relatively low temperature of 700 °C. Y₂Sn₂O₇ host is characterised by an emission around 436 nm, which is arising from the oxygen vacancies present in the lattice. Tb³⁺ emission improves significantly when Sb³⁺ ions are co-doped with Y₂Sn₂O₇:Tb³⁺ nanoparticles. Incorporation of Sb³⁺ ions at the Y³⁺ site of Y₂Sn₂O₇ lattice and associated lattice distortion around Tb³⁺/Y³⁺ ions brought about by the difference in the stable coordination number of Sb³⁺ and Y³⁺ ions are responsible for the improved Tb³⁺ emission from the co-doped samples.     

Enhanced photoluminescence of CaTiO3:Pr phosphor films deposited on SiO2 buffered Si substrates

CaTiO₃:Pr³⁺ films have been prepared by pulsed-laser deposition method on SiO₂-buffered Si substrates, and their microstructure and photoluminescence properties have been compared with those of the films deposited directly on bare Si substrates. The SiO₂ buffer layers were prepared using thermal oxidization and HF-etching. Photoluminescence intensities of CaTiO₃:Pr³⁺ films on the SiO₂-buffered Si substrates are significantly higher (up to 800%) than those of the films on bare Si substrates, which is attributed to the low refractive index and low light absorption of the SiO₂ buffer layer. This study reveals that the presence of the buffer layer is effective in improving the red emission brightness of CaTiO₃:Pr³⁺ films without sacrificing the surface roughness.     

La2O3、Nd2O3、Y2O3对高岭石高温相变动力学的影响

利用综合热分析技术、X射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)和扫描电镜(SEM)研究了La_2O_3、Nd_2O_3、Y_2O_3对高岭石高温条件下转变成莫来石过程的作用,并采用Kissinger方程、Ozawa方程以及JMA修正方程(Ⅰ)和(Ⅱ)分析了La_2O_3、Nd_2O_3、Y_2O_3对高岭石高温相变动力学的影响。结果表明:3种稀土氧化物的掺入对高岭石的相变动力学参数产生了影响,相变活化能和频率因子与未掺入稀土氧化物的高岭石相比有所降低,析晶方式则未发生变化,均属于体积晶化。对比掺入3种稀土氧化物的高岭石相变活化能和频率因子可以看出,Y_2O_3对于高岭石高温条件下相变的促进作用最为明显,相变活化能最低。稀土氧化物对于高岭石高温相变产物影响不大,主晶相为莫来石相,次晶相为方石英相,但稀土氧化物的掺入使得方石英相的结晶度明显提高。     

Local thermal effect at luminescent spot on upconversion luminescence in Y2O3:Er,Yb nanoparticles

Y₂O₃:Er³⁺,Yb³⁺ nanoparticles were synthesized using Pechini type sol-gel method and then characterized by XRD, TEM, SEM, Raman spectroscopy, and fluorescence spectrophotometer. Local temperature effect on upconversion luminescence intensities was theoretically analyzed and experimentally tested. These results indicate that a competition process between local temperature at luminescent spot and laser pump power density decides the development trend of upconversion luminescence intensity. Therefore, it can be concluded that the most intensive upconversion luminescence in Y₂O₃:Er³⁺,Yb³⁺ nanoparticles can be achieved at a certain pump power density, which should be slightly below a given constant value (the corresponding threshold of temperature).     

Concentration effects on Pr luminescence in LaAlO3 crystals

Concentration dependant emission spectra and fluorescence dynamic profiles have been investigated in Pr_xLa_1−xAlO₃ single crystals in order to better understand processes responsible for concentration quenching of the praseodymium ³P₀ and ¹D₂ emissions. The cross-relaxation transfer rates were experimentally determined as a function of Pr³⁺ concentration. Decays were modeled and nearest-neighbor trapping rates were calculated.     

Photoluminescence properties of Y2O3:Tb and YBO3:Tb green phosphors synthesized by hydrothermal method

In this work, two Tb³⁺ activated green phosphors: Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺ were prepared by hydrothermal method. Photoluminescence properties of both phosphors were studied in details. Both phosphors exhibit similar luminescent characteristics symbolized by the dominant green emission at 545 nm. Concentration quenching occurs at the Tb³⁺ concentration of 1.60 atomic% and 2.57 atomic% for Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺, respectively. Luminescence decay properties were characterized to better understand the mechanism of concentration quenching. Based on the calculation, the concentration quenching in both phosphors was caused by the dipole–dipole interaction between Tb³⁺ ions.     

Enhanced G4 emission in NaLaF4: Pr, Yb and charge transfer in NaLaF4: Ce, Yb studied by fourier transform luminescence spectroscopy

A high resolution luminescence study of NaLaF₄: 1%Pr³⁺, 5%Yb³⁺ and NaLaF₄: 1%Ce³⁺, 5%Yb³⁺ in the UV to NIR spectral range using a InGaAs detector and a fourier transform interferometer is reported. Although the Pr³⁺(³P₀ → ¹G₄), Yb³⁺(²F_7/2 → ²F_5/2) energy transfer step takes place, significant Pr³⁺¹G₄ emission around 993, 1330 and 1850 nm is observed. No experimental proof for the second energy transfer step in the down-conversion process between Pr³⁺ and Yb³⁺ can be given. In the case of NaLaF₄: Ce³⁺, Yb³⁺ it is concluded that the observed Yb³⁺ emission upon Ce³⁺ 5d excitation is the result of a charge transfer process instead of down-conversion.     

Low temperature luminescence of KMgF3:Eu crystal

Paper presents luminescence spectra and time resolved spectra of KMgF₃:Eu²⁺ system obtained at different temperatures and pressures, under excitation with 325 nm. At temperatures between 200 K and 292 K the spectra consist of sharp line peaked at 27,830 cm⁻¹ related to ⁶P_7/2 → ⁸S_7/2 transition in Eu²⁺ accompanied by the phonon sideband. Under pressure the red spectral shift with the rate equal to −0.6 cm⁻¹/kbar is observed. Luminescence decay is single-exponential with the lifetime equal to 5.2 ms independent of pressure and temperature. The emission spectra obtained at temperatures lower than 125 K consist of 5 sharp lines peaked at 27,590 cm⁻¹, and 27,670 cm⁻¹, 27,722 cm⁻¹, 27,766 cm⁻¹ and 27,809 cm⁻¹, that relative intensity depends on temperature. Pressure shift of these lines was found to be equal to −0.6 cm⁻¹/kbar; the same as ⁶P_7/2 → ⁸S_7/2 transition in Eu²⁺, whereas their lifetime is shorter and is equal to 0.7 ms at 100 K. These new lines disappear at temperature greater than 200 K. We tentatively related them to the luminescence of Eu²⁺-F center (fluorine vacancy with electron) complex.     

Emission properties of (SrTiO3-TiO2):Pr eutectic with self-organized fractal microstructure

An investigation of spectroscopic properties of (SrTiO₃-TiO₂):Pr³⁺ eutectic and, for comparison, of bulk SrTiO₃:Pr³⁺ and TiO₂:Pr³⁺crystals is presented. Luminescence spectra have been measured under both 450 nm and 350 nm excitation wavelength. For UV excitation they are characterized by a dominant red luminescence corresponding to transition from the ¹D₂ level of Pr³⁺ ions. The mechanism responsible for quenching of blue (from ³P₀ state) and intensification of red luminescence is proposed to be thermally-induced radiationless relaxation involving a low-lying Pr³⁺-Ti⁴⁺ intervalence charge transfer state. Measured decay constants of ¹D₂ excited state of Pr³⁺ are compared with values obtained for other praseodymium doped titanate hosts.     

Luminescence and energy transfer of Mn co-doped SrSi2O2N2:Eu green-emitting phosphors

Eu²⁺ and Mn²⁺ co-doped SrSi₂O₂N₂ green-phosphors, with promising luminescent properties (examined by their powder diffuse reflection, photoluminescence excitation and emission spectra) suitable for UV converted white LEDs, were produced by high temperature solid-state reaction method. The produced materials exhibited intense broad absorption bands at 220–500 nm and a broad emission band centered at ca. 530 nm, attributed to 4f–5d transitions of Eu²⁺. The emission intensity of Eu²⁺ ions was greatly enhanced by introducing Mn²⁺ ions into SrSi₂O₂N₂:Eu²⁺ due to the energy transfer from Mn²⁺ to Eu²⁺. The energy transfer probability from Mn²⁺ to Eu²⁺ depends strongly on the Mn²⁺ concentration, which is maximized at a Mn²⁺ concentration of 3 mol%. It drastically decreases for higher concentrations. The results indicated that SrSi₂O₂N₂:Eu²⁺, Mn²⁺ is a promising green-emitting phosphor for white-light emitting diodes with near-UV LED chips.     

Observation of broadband infrared luminescence in a novel Bi-doped P2O5-B2O3-Al2O3 glass

A novel Bi-doped P₂O₅-B₂O₃-Al₂O₃ glass was investigated, and strong broadband NIR (near infrared) luminescence was observed when the sample was excited by 445 nm, 532 nm, 808 nm and 980 nm lasers, respectively. The max FWHM with 312 nm, the lifetime with 580 μs and the σ_emτ product with 5.3 × 10^− 24 cm² s were obtained which indicates that this glass is a promising material for broadband optical amplifier and tunable laser. The effect of the introduction of B₂O₃ on the glass structure and Bi-ions illuminant mechanism were discussed and analyzed. It is suggested that the introduction of B₂O₃ makes the glass structure closer, and the broadband NIR emission derives from Bi⁰:²D_3/2 → ⁴S_3/2 and Bi⁺:³P₁ → ³P₀ transitions.     

微波和真空烧结制备La2O3掺杂Al2O3透明陶瓷

通过共沉淀法制备La2O3掺杂Al_2O_3纳米粉,粉体经压制后分别采用微波和真空烧结制备Al_2O_3透明陶瓷。结果表明:Al_2O_3粉末颗粒大小均匀,近似球形,为40~60nm;两种烧结方式制备的试样XRD图中均为α-Al_2O_3,未检测到其它相。La2O3掺杂量为1%时,随烧结温度升高,两种烧结方法得到的Al_2O_3陶瓷的相对密度和抗弯强度均呈上升趋势,且微波烧结陶瓷的相对密度和抗弯强度明显高于真空烧结。1500℃烧结时,随La2O3掺杂量的增加,Al_2O_3陶瓷的相对密度均先增大后减小,当La2O3掺杂量为1%时,Al_2O_3陶瓷的相对密度和抗弯强度均最大。微波烧结陶瓷的透光率明显高于真空烧结,且其断口晶粒比真空烧结明显细少。     

添加La2O3对粉煤灰合成Al2O3-SiC复合粉体的影响

以粉煤灰和活性炭为原料,通过碳热还原反应在Ar气氛下合成Al_2O_3-SiC粉体,探究了一条低成本合成Al_2O_3-SiC粉体的可行途径。研究了添加La_2O_3对合成过程的影响。采用XRD和SEM表征了材料的物相组成和显微形貌。结果表明:当粉煤灰与活性炭质量比为100∶44,在1 550℃下保温5h,添加6%(质量分数)的La_2O_3时,可合成性能良好的Al_2O_3-SiC粉体,颗粒分布均匀,平均粒径为0.5~1μm,较不添加La_2O_3合成温度降低约50℃。     

Thermo-optic properties of TiO2, Ta2O5 and Al2O3 thin films for integrated optics on silicon

The direct measurement of the thermo-optic coefficients of aluminium oxide, tantalum pentoxide and titanium dioxide thin films is presented. Using ellipsometry on monolithically integrated permutations of the layers of silicon, silicon dioxide and the material under test, allows the direct measurement of the overall thermo-optic coefficient accounting for thermally induced changes in the dielectric permittivity and density of the materials as well as the elasto-optic effect due to the non-matching thermal expansion coefficients of the different materials.     

Low-temperature synthesis of Y2SiO5:Eu powders using mesoporous silica and their luminescence properties

This paper reports the synthesis of Eu³⁺ ions-doped Y₂SiO₅ (Y₂SiO₅:Eu³⁺) powders by mesoporous template route. Using mesoporous silica SBA-15 as silica source, Y₂SiO₅:Eu³⁺ powders were prepared by solid-state reaction at a calcination temperature of 1300 °C without fluxes. The prepared Y₂SiO₅:Eu³⁺ powders were characterized by X-ray diffraction, scanning electron microscope, nitrogen adsorption-desorption isotherms, and photoluminescence spectroscopy. The results show that the crystalline Y₂SiO₅:Eu³⁺ particles are dense and have a morphology similar to SBA-15. The low calcination temperature is attributed to the high reactive activity of SBA-15 with large surface area and non-crystalline structure. The Y₂SiO₅:Eu³⁺ powders prepared at a low calcination temperature show luminescence properties similar to the reported results of Eu³⁺ doped-Y₂SiO₅ samples prepared at high temperatures.     

Effect of Y3+ codoping on luminescence decays of the 4I13/2 level in Er3+-doped Al2O3 powders prepared by a sol-gel method

The luminescence lifetime of the 0.01 mol.%-0.1 mol.% Er³⁺- and 0–20 mol.% Y³⁺-codoped Al₂O₃ powders prepared at a sintering temperature of 900°C in a non-aqueous sol-gel method has been investigated to explore the enhanced mechanism of photoluminescence properties of the Er³⁺-doped Al₂O₃ by Y³⁺ codoping. For the 0.1 mol.% Er³⁺-Y³⁺-codoped Al₂O₃ powders, the measured lifetime of Er³⁺ gradually increases with increasing Y³⁺ concentration. Consequently, codoping with 20 mol.% Y³⁺ leads to an increase in the measured lifetime from 3.5 to 5.8 ms. By comparing the measured lifetime for different Er³⁺ concentrations in the Al₂O₃ powders, the radiative lifetime of both the Er³⁺-doped and the Er³⁺-Y³⁺-codoped Al₂O₃ powders is estimated to be about 7.5 ms. Infrared absorption spectra indicate that Y³⁺ codoping does not change the-OH content in the Er³⁺-Y³⁺-codoped Al₂O₃ powders. The prolonged luminescence lifetime of the ⁴I_13/2 level of Er³⁺ in Er³⁺-doped Al₂O₃ powders by Y³⁺ codoping is ascribed to the decrease in the energy transfer rate between the Er³⁺ ions and the Er³⁺ and -OH, respectively, due to the suppressed interaction between Er³⁺ ions.     

CaSc2O4:Eu: A tunable full-color emitting phosphor for white light emitting diodes

We report an intense full-color emission originating from ⁵D_0,1,2,3 to ⁷F_0,1,2,3,4 transitions of Eu³⁺ in CaSc₂O₄ upon 395 nm excitation. The emission spectra vary with increasing Eu³⁺ concentration, demonstrating tunable color coordinates from white to red region in the CIE chromaticity diagram. Considering the relaxation from ⁵D_J to ⁵D_J−1 through cross energy transfer, the Eu³⁺ concentration dependent emission spectra are well simulated based on the analysis of steady state rate equations and the measured lifetimes of the ⁵D_J levels. It is suggested that CaSc₂O₄:Eu³⁺ could be a potential single-phased full-color emitting phosphor for near-ultraviolet InGaN chip pumped white light emitting diodes.