共查询到20条相似文献,搜索用时 15 毫秒
1.
本文介绍了一种CMOS自稳零电压比较器的设计。该比较器具有高精度,高灵敏度和较快的速度,其工艺条件及参数与数字电路兼容。文章通过电路设计特点说明其工作原理。对其中的差值电路的设计,特别是放大器的设计,作了具体分析。该比较器完全满足了CM0808八位A/D转换器的要求。 相似文献
2.
3.
4.
This article is presented to describe an area-efficient CMOS folding and interpolating analog-to-digital converter (ADC) for
embedded application, which is fully compatible with standard digital CMOS technology. A modified MOS-transistor-only folding
block contributes to a small chip area. At the input stage, offset averaging reduces the input capacitance and the distributed
track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio (SNDR). An INL/DNL of 0.77 LSB/0.6 LSB was measured. An SNDR figure of 43.7 dB is achieved at 4 MHz input frequencies when operated at full speed of 200 MHz. The chip is realized in a standard digital 0.18 μm CMOS technology and consumes a total power of 181 mW from 3.3 V power supply. The active area is 0.25 mm2. 相似文献
5.
This proposal of a new interpolation technique is presented for application in a double folding A/D converter with interpolation. This interpolation technique is applied in the master latches of the A/D converter without consumption increase. Compared to resistive interpolation, this new interpolation technique has the advantage of avoiding the resistive interpolation ladder adding only three transistors in some master latches and the current is the same as in the simple master latch. A 6-bit A/D converter was designed and implemented in a 1.2 μm BiCMOS process, an FT of 8 GHz, to explain the implementation of interpolation circuitry and evaluate the experimental results. 相似文献
6.
一种CMOS折叠结构ADC中的失调抵消技术 总被引:4,自引:2,他引:2
CMOS折叠预放电路的失调是限制CMOS折叠结构A/ D转换器实现高分辨率应用的主要原因之一.文中提出差分对的动态匹配技术改善了折叠预放电路的失调,从而为研制CMOS工艺中的高分辨率折叠结构A/ D转换器提供了一种可行方案,并给出了MATL AB和电路仿真的实验结果. 相似文献
7.
8.
A single-channel 8-bit low-power high-speed SAR ADC with a novel pre-settling procedure is presented in this paper. The proposed procedure relaxes the settling time significantly and improves the speed of the ADC. Moreover, the asynchronous technique avoids the high frequency internal clocks and further increases the speed of the SAR ADC. Based on SMIC 65 nm 1.2-V CMOS technology, the simulation results demonstrate that DNL and INL are −0.4/0.4 LSBs and −0.9/0.8 LSBs, respectively. At 660 MS/s sampling rate, the ADC consumes 7.6 mW from a 1.2 V supply. The proposed SAR ADC?s SNDR and SFDR are 49.5 dB and 64.2 dB, respectively. 相似文献
9.
实现了一种10位2.5MS/s逐次逼近A/D转换器。在电路设计上采用了R-C混合结构D/A转换、伪差分比较结构以及低功耗电平转换方式实现。为了实现好的匹配性能,在版图布局上分别采用电阻梯伪电阻包围对策以及电容阵列共中心对称布局方式进行布局。整个A/D转换器基于90nm CMOS工艺实现,在3.3V模拟电源电压以及1.0V数字电源电压下,测得的DNL和INL分别为0.36LSB和0.69LSB。在采样频率为2.5MS/s,输入频率为1.2MHz时,测得的SFDR和ENOB分别为72.86dB和9.43bits。包括输出驱动在内,测得整个转换器的功耗为6.62mW。整个转换器的面积约为238um×214um。设计结果显示该转换器性能良好,非常适合多电源嵌入式SoC的应用。 相似文献
10.
A 10-bit 2.5 MS/s SAR A/D converter is presented. In the circuit design, an R-C hybrid architecture D/A converter, pseudo-differential comparison architecture and low power voltage level shifters are utilized. Design chal-lenges and considerations are also discussed. In the layout design, each unit resistor is sided by dummies for good matching performance, and the capacitors are routed with a common-central symmetry method to reduce the nonlin-earity error. This proposed converter is implemented based on 90 nm CMOS logic process. With a 3.3 V analog supply and a 1.0 V digital supply, the differential and integral nonlinearity are measured to be less than 0.36 LSB and 0.69 LSB respectively. With an input frequency of 1.2 MHz at 2.5 MS/s sampling rate, the SFDR and ENOB are measured to be 72.86 dB and 9.43 bits respectively, and the power dissipation is measured to be 6.62 mW including the output drivers. This SAR A/D converter occupies an area of 238×214 μm~2. The design results of this converter show that it is suitable for multi-supply embedded SoC applications. 相似文献
11.
12.
13.
Bengt E. Jonsson Hannu Tenhunen 《Analog Integrated Circuits and Signal Processing》2000,23(2):127-139
The simulated and measured performance of an experimental 10-b wideband CMOS A/D converter design is presented. Fully-differential first-generation switched-current circuits with common-mode feedforward were used to implement a 1.5-b/stage pipelined architecture in order to evaluate the switched-current technique for digital radio applications. With f
in = 1.83, the measured spurious-free dynamic range (SFDR) is 60.3 dB and the signal-to-noise-and-distortion ratio (SNDR) = 46.5dB at 3 MS/s. Although this 3 V design was fabricated in a standard digital 5 V, 0.8 m CMOS process, a high bandwidth was achieved. Since the ADC maintains an SNDR 40 dB for input frequencies of more than 20 MHz, it has the highest input bandwidth reported for any CMOS switched-current A/D-converter implementation. Its sample rate can be increased by parallel, time-interleaved, operation. Measurement results are compared with the measured performance of other wideband switched-current A/D converters and found to be competitive also with respect to area and power efficiency. 相似文献
14.
Traditional and some recently reported low power, high speed and high resolution approaches for SAR A/D converters are discussed. Based on SMIC 65 nm CMOS technology, two typical low power methods reported in previous works are validated by circuit design and simulation. Design challenges and considerations for high speed SAR A/D converters are presented. Moreover, an R-C combination based method is also addressed and a 10-bit SAR A/D converter with this approach is implemented in SMIC 90 nm CMOS process. The DNL and INL are measured to be less than 0.31 LSB and 0.59 LSB respectively. With an input frequency of 420 kHz at 1 MS/s sampling rate, the SFDR and ENOB are measured to be 67.6 dB and 9.46 bits respectively, and the power dissipation is measured to be just 3.17 mW. 相似文献
15.
Traditional and some recently reported low power,high speed and high resolution approaches for SAR A/D converters are discussed.Based on SMIC 65 nm CMOS technology,two typical low power methods reported in previous works are validated by circuit design and simulation.Design challenges and considerations for high speed SAR A/D converters are presented.Moreover,an R–C combination based method is also addressed and a 10-bit SAR A/D converter with this approach is implemented in SMIC 90 nm CMOS process.The DNL and INL are measured to be less than 0.31 LSB and 0.59 LSB respectively.With an input frequency of 420 kHz at 1 MS/s sampling rate, the SFDR and ENOB are measured to be 67.6 dB and 9.46 bits respectively,and the power dissipation is measured to be just 3.17 mW. 相似文献
16.
一种高速电流型CMOS数模转换器设计 总被引:6,自引:3,他引:3
利用 Z参数噪声网络等效电路的分析方法 ,得到了用器件 Z参数表示的微波双极晶体管噪声参数的表达式 ,通过对微波低噪声双极晶体管的高频参数进行测试和分析 ,并把器件的网络参数和物理参数相结合 ,来对器件的最小噪声系数进行计算和分析 . 相似文献
17.
基于传输电流开关理论的电流型CMOS ADC电路设计 总被引:3,自引:3,他引:0
本文利用数字电路设计理论中的舆电流开关理论对A/D转换器的转换过程进行了分析,提出了仅基于该理论的电流型CMOS A/D转换器电路设计。与传统的A/D转换器电路设计比较,它避免了复杂的模拟信号处理部分电路,显著地简化了电路结构。结果表明该电路设计具有正确的逻辑功能。 相似文献
18.
设计了一种低功耗、中速中精度的单端输入逐次逼近A/D转换器,用于微处理器外围接口。其D/A转换器采用分段电容阵列结构,有利于版图匹配,节省了芯片面积;比较器使用三级前置放大器加锁存器的多级结构,应用了失调校准技术;控制电路协调模拟电路完成逐次逼近的工作过程,并且可以控制整个芯片进入下电模式。整个芯片使用UMC 0.18μm混合模式CMOS工艺设计制造,芯片面积1 400μm×1 030μm。仿真结果显示,设计的逐次逼近A/D转换器可以在2.5 V电压下达到12位精度和1 MS/s采样速率,模拟部分功耗仅为1 mW。 相似文献
19.