大尺寸硅片自旋转磨削的试验研究

利用基于自旋转磨削原理的硅片超精密磨床,通过试验研究了砂轮粒度、砂轮转速、工件转速及砂轮进给速度等主要因素对材料去除率、砂轮主轴电机电流以及磨削后硅片表面粗糙度的影响关系。研究结果表明,增大砂轮轴向进给速度和减小工件转速,采用粗粒度砂轮有利于提高磨削硅片的材料去除率,砂轮轴向进给速度对材料去除率的影响最为显著;适当增大砂轮转速,减小砂轮轴向进给速度,采用细粒度砂轮可以减小磨削表面粗糙度;在其它条件一定的情况下,砂轮速度超过一定值会导致材料去除率减小,主轴电机电流急剧增大,表面粗糙度变差;采用比#2000粒度更细的砂轮磨削时,材料去除率减小,硅片表面粗糙度没有明显改善。     

硅片自旋转磨削中基于作用力的微观接触仿真研究

采用杯型金刚石砂轮进行硅片自旋转磨削是典型的硅片超精密磨削加工形式。本试验从其磨削过程中抽象出砂轮微单元与硅片的微观接触作为研究对象,建立基于作用力的仿真模型,采用软件LS-DYNA对自旋转磨削微观作用过程进行了模拟,对作用过程中硅片与砂轮微单元的应力应变情况进行了有限元分析。结果表明:硅片材料存在相应弹性转塑性和塑性转脆性的临界位移与载荷;在硅片塑性区域切向滑动时可在硅片表面产生塑性沟槽与隆起;砂轮微单元上的磨损可依据其仿真数据作出判断。研究为硅片磨削及砂轮磨损机理研究提供支撑。      

大尺寸硅片自旋转磨削运动分析及仿真

本文利用数学矩阵方法,建立大尺寸硅片自旋转磨削运动的理论模型,研究了砂轮半径、硅片和砂轮旋转速度、旋转方向等因素的选择及各因素对磨削轨迹的影响,同时还研究了磨粒合成运动速度的变化规律。研究结果表明,随着砂轮半径的增大,磨削轨迹的曲率减小,选用较小直径砂轮将更有利硅片表面质量的提高。当转速比i大于零,随着i值的增大,磨削轨迹的曲率逐渐减小。在转速比i小于零的情形,当转速比i=-2时,磨削轨迹曲率为0,磨削轨迹的形状接近一条直线。磨粒合成运动速度随砂轮转速和硅片转速的增大而增大。     

金刚石线锯电解磨削切割多晶硅片的试验研究

基于金刚石线锯切割系统,开展了金刚线电解磨削切割多晶硅片试验。结果表明:电解磨削复合加工方法在机械磨削的同时复合了阳极氧化和腐蚀,在硅片表面产生了机械损伤缺陷和电化学腐蚀缺陷。酸制绒时腐蚀反应在两种类型缺陷处顺利进行,形成均匀致密的绒面结构,有效降低硅片表面反射率,有利于后续电池片光电转换效率的提高。     

树脂结合剂金刚石砂轮精密磨削单晶硅片的磨削力研究

通过对树脂结合剂金刚石砂轮磨削单晶硅片的轴向磨削力Fz的变化规律的研究,分析了单晶硅片在磨削过程中轴向磨削力与磨削工艺参数之间的关系。通过改变砂轮的轴向进给速度、砂轮线速度和砂轮粒度等工艺参数,找出了这些工艺参数对轴向磨削力Fz的影响规律,并建立了轴向磨削力的经验公式。结果表明:树脂结合剂金刚石精密磨削单晶硅片时,轴向磨削力随着砂轮的轴向进给速度vf和磨粒粒径的增大而增大,随着砂轮线速度vs的增大而减小,且这三个工艺参数中,砂轮轴向进给速度vf对轴向磨削力的影响最大。     

硅片塑性方式电泳磨削试验研究

分析了在电泳磨削（ＥＰＧ）中实现塑性方式磨削（ＤＲＧ）的机理。试验结果表明,半导体硅片材料能通过塑性变形被去除,从而获得良好的表面质量。     

工程陶瓷磨削表面质量试验研究

本文研究了在不同磨削条件下氧化铝陶瓷表面形成机理，以及影响陶瓷表面粗糙度的诸因素。试验表明：在一定加工条件下陶瓷表面也会发生塑性变化，这说明陶瓷材料是有可能通过机械加工方法获得可靠的表面质量的。     

Microstructure studies of the grinding damage in monocrystalline silicon wafers

1. Introduction The monocrystalline silicon wafer, as an impor-tant substrate of the integrated circuit, is widely used in IC manufacturing. Various processes are needed to transfer a silicon crystal ingot into wafers. Silicon crystallizes in the diamond lattice, with covalent bonding, ensuring an extremely stable spatial ar-rangement of the Si atoms in the monocrystal. It is a brittle material. Most processes can induce me-chanical damage. The depth and nature of the sub-surface damage will…     

An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated.     

Fine grinding of silicon wafers

Silicon wafers are used for the production of most microchips. Various processes are needed to transfer a silicon crystal ingot into wafers. As one of such processes, surface grinding of silicon wafers has attracted attention among various investigators and a limited number of articles can be found in the literature. However, no published articles are available regarding fine grinding of silicon wafers. In this paper, the uniqueness and the special requirements of the silicon wafer fine grinding process are introduced first. Then some experimental results on the fine grinding of silicon wafers are presented and discussed. Tests on different grinding wheels demonstrate the importance of choosing the correct wheel and an illustration of the proper selection of process parameters is included. Also discussed are the effects of the nozzle position and the flow rate of the grinding coolant.     

碳化硅磨削亚表面损伤检测方法

反应烧结碳化硅(reaction bonded SiC,RBSiC)有着良好的物理和机械性能,在空间光学领域应用广泛。分别采用截面显微法和角度抛光法研究了金刚石砂轮磨削反应烧结碳化硅的亚表面损伤。实验结果表明:应用截面显微法能更直观地反映出损伤的形态和分布特征,角度抛光法测量损伤深度更为精确,亚表面损伤主要以凹坑和微裂纹的形式存在,主要发生在SiC颗粒上,且砂轮粒度对损伤影响很大。     

硅片纳米磨削过程中磨粒切削深度的测量

分析了硅片纳米磨削过程中磨粒切削深度的特点,采用基于扫描白光干涉原理的三维表面轮廓仪对磨削后硅片表面的磨削沟槽的深度和宽度进行了测量,进而对磨削沟槽的深度和未变形切屑的横截面的宽高比进行了统计分析。研究表明,采用硅片自旋转磨削方法对硅片进行纳米磨削时,参与切削的磨粒数量极少,起主要切削作用的磨粒只占有效磨粒数量的一小部分,此部分磨粒的切削深度大于砂轮的切削深度,甚至可达后者的2倍;未变形切屑的截面为三角形,其宽高比在21～153之间,平均值为69。     

Experimental investigation of surface/subsurface damage formation and material removal mechanisms in SiC grinding

The difficulty and cost involved in the abrasive machining of hard and brittle ceramics are among the major impediments to the widespread use of advanced ceramics in industries these days. It is often desired to increase the machining rate while maintaining the desired surface integrity. The success of this approach, however, relies in the understanding of mechanism of material removal on the microstructural scale and the relationship between the grinding characteristics and formation of surface/subsurface machining-induced damage. In this paper, grinding characteristics, surface integrity and material removal mechanisms of SiC ground with diamond wheel on surface grinding machine have been investigated. The surface and subsurface damages have been studied with scanning electron microscope (SEM). The effects of grinding conditions on surface/subsurface damage have been discussed. This research links the surface roughness, surface and subsurface damages to grinding parameters and provides valuable insights into the material removal mechanism and the dependence of grinding-induced damage on grinding conditions.     

Grinding induced subsurface cracks in silicon wafers

Silicon wafers are used for production of most microchips. Various processes are needed to transfer a silicon crystal ingot into wafers. To ensure high surface quality, the damage layer generated by each of the machining processes (such as lapping and grinding) has to be removed by its subsequent processes. Therefore it is essential to assess the subsurface damage for each machining process. This paper presents the observation of subsurface cracks in silicon wafers machined by surface grinding process. Based on cross-sectional microscopy methods, several crack configurations are identified. Samples taken from different locations on the wafers are examined to investigate the effects of sample location on crack depth. The effects of grinding parameters such as feedrate and wheel rotational speed on the depth of subsurface crack have been studied by a set of factorial design experiments. Furthermore, the relation between the depth of subsurface crack and the wheel grit size is experimentally determined.     

旋转磨削硅片加工应力与亚表面损伤的研究

采用一种获得硅片局部位置应力状态的方法,通过测量硅片在局部位置的面形数据,结合反演计算获得该位置的平面主应力及其方向。对金刚石砂轮磨削（100）硅片的分析结果表明:不同位置的应力状态并不完全与以往的研究中通常采用的Stoney公式所计算出的平均应力相符,而是与其在整个硅片上所处的位置有关。采用角度抛光法检测亚表面损伤深度的结果表明:各种条件下损伤层深度均在0.4 μm左右,加工应力与亚表面损伤深度没有明确的对应关系。      

Edge chipping of silicon wafers in diamond grinding

Although diamond grinding is the most commonly used machining technique in silicon wafer thinning, it often induces edge chipping which leads to wafer breakage. This study investigates edge chipping of silicon wafer in diamond grinding. The study correlates edge chipping with the crystallographic orientation and thickness of a silicon wafer, as well as grinding process conditions, such as wheel grit size, grinding mode and feed rate. It identifies edge chipping in terms of critical thickness, geometry and dimensions. The study discusses the mechanisms of edge chipping based on machining mechanics and energy theories. Conclusions are drawn to summarize the study.     

Surface damage in wire-cut silicon wafers

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