晶界效应对钙钛矿La_(0.7)Ba_(0.3)MnO_3多晶材料的磁输运特性的影响(英文)

本文通过比较La0.7Ba0.3MnO3多晶和外延薄膜样品磁输运行为之间的差异,讨论了晶界对多晶样品输运特性的影响,并计算了晶界电阻率随温度和磁场的变化关系.与晶粒的本征电阻率相比,晶界的电阻率要大一个量级,并且其金属-绝缘转变温度低约50K.此外,在晶界中观察到了新奇的正磁阻效应.我们认为,晶界在其转变温度附近出现了相分离现象,并形成铁磁金属渗流通道.由于晶界的特殊构型,Ba掺杂锰氧化物材料中大的磁致伸缩效应对其输运行为影响很大,导致了晶界中正磁阻现象的出现.     

Oxygen vacancies effects on phase diagram of epitaxial La_(1-x)Sr_xMnO_3 thin films

We investigated the effects of oxygen vacancies on the structural,magnetic,and transport properties of La_(1-x)Sr_xMnO_3(x=0.1,0.2,0.33,0.4,and 0.5)grown around a critical point(without/with oxygen vacancies)under low oxygen pressure(10 Pa)and high oxygen pressure(40 Pa).We found that all films exhibit ferromagnetic behavior below the magnetic critical temperature,and that the films grown under low oxygen pressures have degraded magnetic properties with lower Curie temperatures and smaller magnetic moments.These results show that in epitaxial La_(1-x)Sr_xMnO_3 thin films,the magnetic and transport properties are very sensitive to doping concentration and oxygen vacancies.Phase diagrams of the films based on the doping concentration and oxygen vacancies were plotted and discussed.     

Surface protonation and oxygen evolution activity of epitaxial La_(1-x)Sr_xCoO_3 thin films

As an alternative electrode material, transition metal oxides are promising candidates due to multivalent nature and oxygen vacancies present in the structure with facilitate redox reactions. The aim of this study is to explore the intrinsic mechanism of oxygen evolution reaction(OER) using two-dimensional thin film La_(1-x)Sr_xCoO_3 electrode as a model. Herein, we report a planar two-dimensional model La_(1-x)Sr_xCoO_3 electrode grown on a Nb-SrTiO_3 single-crystal substrate via pulsed laser deposition. The two-dimensional La_(1-x)Sr_xCoO_3 films offer different oxygen evolution activities at different pH electrolyte solutions. The mechanisms behind the variations of the oxygen evolution activity were discussed after comparing the oxygen evolution activity before and after treatments of the electrodes and measurements by various test methods. The results of this study offer a promising, low-cost electrode material for the efficient OER and a sustainable production of hydrogen fuel.     

Effects of substrate-induced-strain on the structural and transport properties of La0.7Ca0.3MnO3 thin films

We have studied the structural and electrical properties of epitaxial La_0.7Ca_0.3MnO₃ (LCMO) thin films prepared by metal organic deposition under different types and degrees of substrate-induced strain. 40-nm-thick films have been epitaxially grown on single-crystalline (LaAlO₃)_0.3?C(SrAlTaO₆)_0.7 (negligible tensile strain), SrTiO₃ (tensile strain) and LaAlO₃ (compressive strain) substrates. High-resolution X-ray diffraction and reciprocal space maps demonstrate a direct correlation between the crystalline quality and the substrate-induced strain. The electrical properties were found to be strongly dependent on the substrate used. The temperature dependence of resistivity curves was fitted using various approaches in different phases (below and above the ferromagnetic transition temperature T _P). In the ferromagnetic metallic phase, ??(T) follows a T ^?? power law. The obtained values of the coefficient ???(3.5?C4) indicate that the electrical transport in our films is a combination of spin wave scattering processes and electron?Cmagnon or two-magnon scattering phenomena. In the paramagnetic insulator phase, the activation energy E _A and the variable range hopping characteristics (characteristic temperature T ₀) were found to be strongly dependent on the strain-induced lattice mismatch between the LCMO and the substrate used.     

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films

We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage(I–V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures( 253 K), the I–V curve shows an open circuit voltage(OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures( 253 K), the I–V behaviors are governed by both space-charge-limited conduction(SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.     

Current-dependent positive magnetoresistance in La_(0.8)Ba_(0.2)MnO_3 ultrathin films

We report an investigation into the magnetoresistance(MR) of La_(0.8) Ba_(0.2) Mn O_3 ultrathin films with various thicknesses. While the 13 nm-thick film shows the commonly reported negative magnetoresistive effect, the 6 nm-and 4 nmthick films display unconventional positive magnetoresistive(PMR) behavior under certain conditions. As well as the dependence on the film's thickness, it has been found that the electrical resistivity and the PMR effect of the thinner films are very dependent on the test current. For example, the magnetoresistive ratio of the 4 nm-thick film changes from +46%to-37% when the current is increased from 10 n A to 100 n A under 15 k Oe at 40 K. In addition, the two thinner films present opposite changes in electrical resistivity with respect to the test current, i.e., the electroresistive(ER) effect, at low temperatures. We discuss the complex magnetoresistive and ER behaviors by taking account of the weak contacts at grain boundaries between ferromagnetic metallic(FMM) grains. The PMR effect can be attributed to the breaking of the weak contacts due to the giant magnetostriction of the FMM grains under a magnetic field. Considering the competing effects of the conductive filament and local Joule self-heating at grain boundaries on the transport properties, the dissimilar ER effects in the two thinner films are also understandable. These experimental findings provide an additional approach for tuning the magnetoresistive effect in manganite films.     

Effect of charge ordering and disordering on terahertz radiation characteristics of magnetoresistive Pr0.7Ca0.3MnO3 thin films

Terahertz (THz) radiation from voltage-biased photoswitching devices made on magnetoresistive manganite Pr0.7Ca0.3MnO3 have been investigated for thin films grown under different conditions. We find that the temperature dependence of THz radiation near the charge-ordering temperature strongly depends on the growth condition of Pr0.7Ca0.3MnO3, whereas THz radiation shows no such temperature dependence near the spin-ordering temperature.     

Polar dependent in-plane electric transport of epitaxial ZnO thin films on SrTiO(3) substrates

Polar (001) and nonpolar (110) ZnO epitaxial thin films were grown on SrTiO(3) substrates by the pulsed laser deposition method and the in-plane electric transport was investigated. Both films display semiconducting behavior. The polar thin films have linear I-V relations with mobility increasing almost linearly with temperature. In contrast, for nonpolar ZnO thin films, the I-V curves are symmetric and nonlinear with room temperature resistivity 30 times larger than that of polar thin films. We conclude that in nonpolar ZnO thin films the bound polarization charge induced barrier limits the carrier transport. Instead, for polar thin films, the polar effect on the in-plane transport is negligible, and the charged dislocation scattering is dominant. Our observations suggest the polar effect should be considered in the design of ZnO related devices.     

La_(0.7-x)Gd_xSr_(0.3)MnO_3(x=0.20,0.30,0.40,0.50)的TCR研究(英文)

研究了La位Gd掺杂对La0.7-xGdxSr0.3MnO3(x=0.20,0.30,0.40,0.50)体系的电阻温度系数(TCR)的影响.实验结果表明:Gd掺杂将引起电阻率曲线的急剧变化,导致出现大的TCR;而且随Gd掺杂的增加,TCR在x=0.30出现峰值,然后随掺杂量增加逐步降低.体系出现大的TCR,来源于Gd掺杂引起的额外磁性耦合.     

The effect of cycle deformation on the AC conductivity of (Bi0.3Sb0.7)2Te3 films

It has been found that the resistance of the (Bi_0.3Sb_0.7)₂Te₃ porous polycrystalline film fabricated by thermal vacuum evaporation at substrate temperature T _s ≤ 363 K drastically decreases near the threshold AC frequency ω₀ ≈ 10⁵ Hz as low as the resistance of dense films with T _s ≈ 423 K. After the action of N ≈ 10⁵ cycles of mechanical deformation with amplitude ε = ±1 × 10^–3 a.u., the film resistance increases by 1.5 times and the threshold frequency decreases in almost 10² times, which can qualitatively be accounted for by the model of microcontacting blocks.

     

Extrinsic electronic transport in La0.7(Sr,Ca)0.3MnO3 films deposited on step edges and bicrystal substrates

In this paper, the electronic transport of La(0.7)(Sr,Ca)(0.3)MnO(3) films grown by pulsed laser deposition on a LaAlO(3)(001) substrate with deep parallel structured steps and a 30° symmetric bicrystal SrTiO(3)(001) substrate have been discussed. The electronic transport properties have been related to the well-known extrinsic transport of bulk manganite compounds. The spin-glass-like behavior with a characteristic peak at 20 K and domain formation at the grain boundary is observed. Further, it has been quantified from the resonant tunneling model that mixed magnetic interactions play a significant role in the manganite films deposited on step edges.     

Transport properties and anomalous fatigue effect of Ag/Bi_(0.9)La_(0.1)FeO_3/La_(0.7)Sr_(0.3)MnO_3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I–V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I–V curves combined with C– f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I–V cycle state, this structure shows more than one order increase of resistance after 100 cycles of "I–V curve training". The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.1FeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.1FeO3 interface.     

共格外延的La_(0.7)Sr_(0.3)MnO_3薄膜的应变弛豫

厚度为7～100nm La0.7Sr0.3MnO3(LSMO)薄膜是由脉冲激光法生长在(001)(LaAlO3)0.3(Sr2AlTaO6)0.7(LSAT)衬底上.薄膜的结构演变是由高分辨X-射线ω-摇摆曲线及倒易空间(103)反射来表征.我们的结果表明所有的LSMO薄膜是共格生长在LSAT(001)上.对厚度大于(或等于)22nm的LSMO薄膜既显示可调制的单斜(MA)结构,也包含切应变弛豫诱导的有序畴结构和平面内超格子.薄膜的厚度依赖的结构畴宽,以及切应变对薄膜居里温度Tc的影响被仔细研究.作为对比,晶格失配对LSMO薄膜中周期畴形成的影响也被讨论.     

Linear and quadratic magneto-optical effects observed in La0.7Sr0.3MnO3 thin films in transmitted light

Magnetic linear dichroism (MLD) is observed in polycrystalline La_0.7Sr_0.3MnO₃ films in transmitted light. The spectral and temperature dependences of the MLD are determined for the energy E of the light wave ranging from 1.5 to 3.5 eV. The experimental spectra are fitted by a sum of Lorentzian curves. The MLD spectrum exhibits more features in comparison to the spectra of magnetic circular dichroism (MCD), which we measured earlier using the same film samples. Various temperature behaviors of the intensities of the Lorentzian components centered at different E values have been revealed. This can be related to the effect of the surface states on the magneto-optical characteristics of the samples.     

电脉冲对多晶La0.7Ca0.3MnO3比热的影响

对电脉冲诱导的不同电阻态下La_0.7Ca_0.3MnO₃样品的比热进行了研究.实验结果表明,电脉冲导致La_0.7Ca_0.3MnO₃样品比热随电阻状态发生可逆变化.比热随电阻状态的减小而减小.低温比热拟合及不同电阻状态下的比热差与温度关系说明,声子对比热的贡献不随电阻状态变化,磁性和载流子对比热的贡献是导致La_0.7Ca_0.3MnO₃样品比热变化的原因.电脉冲诱导O离子沿一维扩展性缺陷的电化学迁移,导致材料中局部区域的O离子浓度发生变化.O离子浓度的变化导致载流子浓度的变化,同时载流子浓度的变化将使得低温下磁性耦合强度发生变化,从而导致比热发生变化. 关键词： 0.7Ca_0.3MnO₃')" href="#">La_0.7Ca_0.3MnO₃ 比热 氧离子迁移     

Mo掺杂La_(0.7)Ca_(0.2)Ba_(0.1)Mn_(1-x)Mo_xO_3体系的磁电性质

本文采用固相反应法制备了高价态离子Mo掺杂的La0.7Ca0.2Ba0.1Mn1-xMoxO3(x=0,0.01,…,0.06)多晶样品,研究了Mo掺杂对样品的结构、磁性和磁电阻的影响.X射线衍射谱证实所有样品均为具有正交对称性的钙钛矿结构.零场冷却(ZFC)和加场冷却(FCH=0.01T)下其磁化～温度(M～T)曲线的测量表明样品随温度降低发生了从顺磁(PM)到铁磁(FM)的相变,T相似文献   

In-plane structural order of domain engineered La0.7Sr0.3MnO3 thin films

We present a detailed structural study of tensile-strained La_0.7Sr_0.3MnO₃ thin films. We use the substrate miscut to control the number of rhombohedral variants in the films and study the in-plane order and structural distortions. Using high-resolution X-ray diffraction, we demonstrate that step-edge induced lattice modulations occur in 4-variant films, whereas periodic twinning is the dominant in-plane order for 2-variant films. We show that the in-plane twinning angle is almost completely relaxed. However, the relaxation of shear strain by the out-of-plane twinning angle and the monoclinic distortion is only partial. Furthermore, the film thickness dependence of the domain width reveals that domain formation is a universal mechanism for shear strain relaxation. Finally, we show that the structural response to the transition from the paramagnetic to the ferromagnetic phase of La_0.7Sr_0.3MnO₃ at 345?K is smaller in 4-variant films compared to 2-variant films.     

Structural,photoluminescent, and dielectric properties of Eu3+-doped Ba0.7Sr0.3TiO3 thin films

Eu³⁺-doped Ba_0.7Sr_0.3TiO₃ thin films were prepared by a chemical solution deposition method and characterized by X-ray diffraction, field emission scanning electron microscopy, photoluminescence and dielectric measurements. The thin films were well crystallized with a pure perovskite structure. A contraction of the unit cell was observed upon incorporation of Eu³⁺ ions below 2 mol%, while an expansion occurred as the Eu³⁺ concentration was further increased above 2 mol%, indicating that Eu³⁺ ions with different concentrations occupied different lattice sites. Photoluminescence spectra showed two prominent transitions of Eu³⁺ ions at 594 nm (⁵D₀ → ⁷F₁) and 618 nm (⁵D₀ → ⁷F₂) upon excitation at 395 nm (⁷F₀ → ⁵L₆). There existed two quenching concentrations at 2 mol% and 4 mol% due to different lattice sites of the Eu³⁺ ions. We also investigated the dielectric properties of the thin films. Our study suggests that Eu³⁺-doped Ba_0.7Sr_0.3TiO₃ thin films have potential applications in multifunctional optoelectronic devices.     

High-quality epitaxial LaNiO3 thin films on SrTiO3(100) and LaAlO3(100)

LaNiO₃ thin films have been deposited by pulsed laser deposition on SrTiO₃(100) and LaAlO₃(100) substrates. The processing conditions have been investigated in order to optimize electrical resistivity, crystal quality, and surface morphology. Excellent properties are achieved at moderate substrate temperature and relatively low oxygen pressure, without the need for annealing. Thickness exerts an important influence on electrical transport, as the electrical resistivity increases quickly in films thicker than a few tens of nanometer. The surface of the films on LaAlO₃ is very flat in all the studied thickness range, but the films on SrTiO₃ develop a pattern of boundaries and even cracks as the thickness is higher. Below the critical thickness, high-quality epitaxial films with very smooth surface and low electrical resistivity are obtained under the optimum conditions of substrate temperature and oxygen pressure. The optimum processing conditions are different depending on the substrate, and control is especially critical in films deposited on SrTiO₃.