Photovoltaic property dependence of dye-sensitized solar cells on sheet resistance of FTO substrate deposited via spray pyrolysis

F-doped SnO₂ (FTO) glass substrate was successfully fabricated via spray-pyrolysis deposition for use as a transparent conducting substrate in dye-sensitized solar cells (DSSCs). To investigate the performance dependence of DSSCs on the sheet resistance of the FTO films, three types of FTO films with sheet resistance values of 2 Ω/□, 4 Ω/□, and 10 Ω/□ were fabricated. Commercial FTO films having a sheet resistance of 15 Ω/□ were prepared for comparison. The structural, electrical, and optical properties of FTO films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), the four-point probe method, and UV–vis spectrometry. The photocurrent–voltage data show that DSSCs fabricated with a sheet resistance of 2 Ω/□ exhibit the best photoconversion effciency (～5.5%) among the four samples. The performance improvement of DSSCs is due to improved short-circuit current density (～13.7 mA/cm²) and fill factor (～62.3%).     

Preparation of dye sensitized solar cell by using supercritical carbon dioxide drying

Dye-sensitized solar cells (DSSC) derived from TiO₂ aerogel film electrodes were fabricated. TiO₂ aerogels were obtained by using sol–gel method and supercritical carbon dioxide (sc-CO₂) drying. First, TiO₂ wet gels were obtained by sol-gel method. Then, the solvents in the TiO₂ wet gels were replaced by acetone. The TiO₂ aerogels were obtained by using sc-CO₂ drying from the TiO₂ wet gels. The conditions of sc-CO₂ drying were at 313, 323 K and 7.8–15.5 MPa. The electrodes with TiO₂ aerogel films were obtained by deposition of the aerogels on glass substrates. The electrodes with TiO₂ aerogel films and a commercial particle film of various thickness were obtained by repetitive coatings and calcinations. The amount of dye adsorbed on the TiO₂ films with sc-CO₂ drying was higher than that of commercial particle film. The amount of dye adsorbed on the TiO₂ films increased with increasing surface area of the TiO₂ film. DSSCs were assembled by using the TiO₂ aerogel film electrodes and their current–voltage performance was measured. The power performance of DSSC made by supercritical drying was higher than that of commercial particles. The DSSC with the film electrode made at 313 K and 15.5 MPa showed the best power performance (J_sc = 7.30 mA/cm², V_oc = 772 mV, η = 3.28%).     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Using Al2O3 defect levels to enhance the photoelectrocatalytic activity of SnS2 nanosheets

Hexagonal SnS₂ nanosheets and Al₂O₃/SnS₂ composites were fabricated via a one-step hydrothermal synthesis method. The investigation indicates that hexagonal SnS₂ with diameters of 100–200 nm are well dispersed on the surface of Al₂O₃. The band gap of SnS₂ after coupling with 11 wt%-Al₂O₃ is reduced by 0.042 eV compared with the pure SnS_2. The composite with 11 wt%-Al₂O₃ shows the highest photocurrent density of 37 μA/cm² at 0.49 V (vs. Ag/AgCl) under visible light (λ>420 nm), which is approximately 1.2 times that of the pure SnS₂ nanosheets. Photoelectrocatalytic measurements demonstrate that an appropriate amount of Al₂O₃ can enhance the photoelectrocatalytic efficiency of SnS₂. The 11 wt%-Al₂O₃/SnS₂ composite (AOSS-11) can degrade 85.9% MB after 3 h under visible light illumination at an applied potential of 0.49 V (vs. Ag/AgCl). The highly effective photoelectrocatalytic activity of the Al₂O₃/SnS₂ composite is attributed to the efficient separation of photoinduced electron-hole pairs based on the defect levels. This work may provide a new design idea for constructing the effective SnS₂-based photocatalysts with other defective semiconductors.     

Coupling CoFe2O4 and SnS2 nanoparticles with reduced graphene oxide as a high-performance electromagnetic wave absorber

The reduced graphene oxide (RGO)/CoFe₂O₄/SnS₂ composites have been successfully synthesized by two-step hydrothermal processes. TEM results show that CoFe₂O₄ and SnS₂ nanoparticles with both diameters about 5–10 nm are well dispersed on the surface of graphene. Compared with RGO/CoFe₂O₄ composites, the as-prepared RGO/CoFe₂O₄/SnS₂ composites exhibit excellent electromagnetic (EM) wave absorption properties in terms of both the maximum reflection loss and the absorption bandwidth. The maximum reflection loss of RGO/CoFe₂O₄/SnS₂ composites is −54.4 dB at 16.5 GHz with thickness of only 1.6 mm and the absorption bandwidth with the reflection loss below −10 dB is up to 12.0 GHz (from 6.0 to 18.0 GHz) with a thickness in the range of 1.5–4.0 mm. And especially, they cover the whole X band (8.0–12.0 GHz), which could be used for military radar and direct broadcast satellite (DBS).     

Electrical and optical properties of diamond-like carbon films deposited by pulsed laser ablation

Pulsed laser ablation of a graphite target was carried out by ArF excimer laser deposition at a laser wavelength of 193 nm and fluences of 10 and 20 J/cm² to produce diamond-like carbon (DLC) films. DLC films were deposited on silicon and quartz substrates under 1 × 10^? 6 Torr pressure at different temperatures from room temperature to 250 °C. The effect of temperature on the electrical and optical properties of the DLC films was studied. Laser Raman Spectroscopy (LRS) showed that the DLC band showed a slight increase to higher frequency with increasing film deposition temperature. Spectroscopic ellipsometry (SE) and ultraviolet–visible absorption spectroscopy showed that the optical band gap of the DLC films was 0.8–2 eV and decreased with increasing substrate temperature. These results were consistent with the electrical resistivity results, which gave values for the films in the range 1.0 × 10⁴–2.8 × 10⁵ Ω cm and which also decreased with deposition temperature. We conclude that at higher substrate deposition temperatures, DLC films show increasing graphitic characteristics yielding lower electrical resistivity and a smaller optical band gap.     

Dye sensitized solar cells based on hydrothermally grown TiO2 nanostars over nanorods

A rutile titanium dioxide nanostar over nanorods is synthesized by a simple and cost-effective hydrothermal deposition method onto conducting glass substrates. In order to study the effect of precursor concentrations on the growth of TiO₂, the amount of Ti precursor is varied from 0.1 mL to 0.5 mL at the interval of 0.1 mL. These TiO₂ thin films are characterized for their morphological, structural, optical and J–V properties using various characterization techniques. SEM images showed the formation of densely packed nanostars over nanorods for 0.3 mL titanium tetraisopropoxide (TTIP). XRD patterns show the formation of polycrystalline TiO₂ with tetragonal crystal structure possessing rutile phase. Further, the TiO₂ thin films are used for dye sensitized solar cells using N3-dye.The films were photoelectrochemically active and can be viewed as a promising application in DSSC with maximum current density of 1.459 mA/cm² with enhanced photovoltage of 696 mV for the sample prepared at 0.3 mL TTIP.     

Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films

Aluminum oxide (Al₂O₃) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10^?3 mbar in the substrate temperatures range 300–973 K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible spectroscopy and nanoindentation. The X-ray diffraction studies showed that the films deposited at low substrate temperatures (300–673 K) were amorphous Al₂O₃, whereas those deposited at higher temperatures (≥773 K) were polycrystalline cubic γ-Al₂O₃. The transmission electron microscopy studies of the film prepared at 673 K, showed diffuse ring pattern indicating the amorphous nature of Al₂O₃. The surface morphology of the films was examined by atomic force microscopy showing dense and uniform nanostructures with increased surface roughness from 0.3 to 2.3 nm with increasing substrate temperature. The optical studies were carried out by ellipsometry in the energy range 1.5–5.5 eV and revealed that the refractive index increased from 1.69 to 1.75 (λ=632.8 nm) with increasing substrate temperature. The UV–visible spectroscopy analysis indicated higher transmittance (>80%) for all the films. Nanoindentation studies revealed the hardness values of 20.8 and 24.7 GPa for the films prepared at 300 K and 973 K respectively.     

Semiconducting amorphous carbon thin films for transparent conducting electrodes

Semiconducting amorphous carbon thin films were directly grown on SiO₂ substrate by using chemical vapor deposition. Raman spectra and transmission electron microscopy image showed that the a-C films have a short-range ordered amorphous structure. The electrical and optical properties of the a-C thin films were investigated. The films have sheet resistance of 3.7 kΩ/□ and high transmittance of 82%. They exhibit metal-oxide-semiconductor field effect transistor mobility of 10–12 cm² V⁻¹ s⁻¹ at room temperature, which is comparable to previous reported mobility of amorphous carbon. The optical band gap was calculated by Tauc’s relationship and photoluminescence spectra showed that the films are semiconductor with an optical band gap of 1.8 eV. These good physical properties make the a-C films a candidate for the application of transparent conducting electrodes.     

Simple self-assembly of SnS2 entrapped graphene aerogel and its enhanced lithium storage performance

In this work, SnS₂ nanoplates entrapped graphene aerogel has been successfully prepared by simple self-assembly of reduced graphene oxide obtained through mild chemical reduction. Structural and morphological investigations demonstrated that SnS₂ nanoplates are highly dispersed in the three dimensional (3D) porous graphene matrix. When served as anode material for lithium-ion batteries, the electrochemical properties of SnS₂/graphene aerogel (SnS₂/GA) were evaluated by galvanostatic discharge–charge tests, cyclic voltammetry and impedance spectroscopy measurement. Compared with pristine SnS₂, the SnS₂/GA nanocomposite achieved a much higher initial reversible capacity (1186 mAh g⁻¹), superior cyclic stability (1004 mAh g⁻¹ after 60 cycles, corresponding to 84.7% of the initial reversible capacity), as well as better rate capability (650 mAh g⁻¹ at a current density of 1000 mA g⁻¹). This significantly improved lithium storage performance can be attributed to the good integration of SnS₂ nanoplates with 3D porous graphene network, which can not only provide much more active sites and easy access for Li ions intercalation, but also prevent the aggregation of SnS₂ nanoplates and facilitate fast transportation of Li ions and surface electrons during the electrochemical process.     

Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition

The variation of the chemical composition and properties of PZT films as a function of oxygen pressure and laser fluence during pulsed laser deposition is used to tune the electrical properties of the PZT thin films. It is found that the deposition using a 248 nm laser fluence of 1.7 J/cm² and an oxygen pressure of 400 mtorr results the PZT films very similar to that of target material. Changing the laser fluences or oxygen pressure, affects the lead content of the deposited film. In the range of oxygen pressure 50–200 mtorr, the Zr/Zr+Ti and Ti/Zr+Ti ratio varies with oxygen pressure while the Pb/Zr+Ti ratio is almost uniform. Using oxygen pressure as a control parameter to tune the chemical compound and electrical properties of the deposited PZT films, the remnant polarization of the PZT films is tuned in the range of 6.6–42.2 µC/cm², the dielectric constant is controlled in the range of 29–130, and the piezoelectric constant d₃₃ is controlled in the range of 3.82–4.96 pm/V for a 40 nm thick PZT film.     

Dielectric properties and bright red emission of Y3+/Eu3+-codoped ZrO2 thin films prepared by chemical solution deposition

We report on an effective combination of good dielectric properties with bright red emission in Y³⁺/Eu³⁺-codoped ZrO₂ thin films. The thin films were deposited on fused silica and Pt/TiO₂/SiO₂/Si substrates using a chemical solution deposition method. The crystal structure, surface morphology, electrical and optical properties of the thin films were investigated in terms of annealing temperature, and Y³⁺/Eu³⁺ doping content. The 5%Eu₂O₃–3%Y₂O₃–92%ZrO₂ thin film with 400 nm thickness annealed at 700 °C exhibits optimal photoluminescent properties and excellent electrical properties. Under excitation by 396 nm light, the thin film on fused silica substrate shows bright red emission bands centered at 593 nm and 609 nm, which can be attributed to the transitions of Eu³⁺ ions. Dielectric constant and dissipation factor of the thin films at 1 kHz are 30 and 0.01, respectively, and the capacitance density is about 65.5 nf/cm² when the bias electric field is less than 500 kV/cm. The thin films also exhibit a low leakage current density and a high optical transmittance with a large band gap.     

SnS2/TiO2 nanocomposites with enhanced visible light-driven photoreduction of aqueous Cr(VI)

SnS₂/TiO₂ nanocomposites have been synthesized via microwave assisted hydrothermal treatment of tetrabutyl titanate in the presence of SnS₂ nanoplates in the solvent of ethanol at 160 °C for 1 h. The physical and chemical properties of SnS₂/TiO₂ were studied by XRD, FESEM, EDS, TEM, XPS and UV–vis diffuse reflectance spectra (DRS). The photocatalytic activity of SnS₂/TiO₂ nanocomposites were evaluated by photoreduction of aqueous Cr(VI) under visible light (λ>420 nm) irradiation. The experimental results showed that the SnS₂/TiO₂ nanocomposites exhibited excellent reduction efficiency of Cr(VI) (~87%) than that of pure TiO₂ and SnS₂. The SnS₂/TiO₂ nanocomposites were expected to be a promising candidate as effective photocatalysts in the treatment of Cr(VI) wastewater.     

Anode-supported SOFCs based on Sm0.2Ce0.8O2−δ electrolyte thin-films fabricated by co-pressing using microwave combustion synthesized powders

Decreasing the electrolyte thickness is an effective approach to improve solid oxide fuel cells (SOFCs) performance for intermediate-temperature applications. Sm_0.2Ce_0.8O_2−δ (SDC) powders with low apparent density of 32±0.3 mg cm⁻³ are synthesized by microwave combustion method, and SDC electrolyte films as thin as ~10 μm are fabricated by co-pressing the powders onto a porous NiO–SDC anode substrate. Dense SDC electrolyte thin films with grain size of 300–800 nm are achieved at a low co-firing temperature of 1200 °C. Single cells based on SDC thin films show peak power densities of 0.86 W cm⁻² at 650 °C using 3 vol% humidified H₂ as fuel and ambient air as oxidant. Both the thin thickness of electrolyte films and ultra-fine grained anode structure make contributions to the improved cell performance.     

Preparation of (0 2 0)-oriented BaTi2O5 thick films and their dielectric responses

Barium dititanate (BaTi₂O₅) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (0 2 0)-oriented BaTi₂O₅ films were investigated using several equivalent electric circuit models. BaTi₂O₅ films in a single phase were obtained at a Ti/Ba molar ratio (m_Ti/Ba) of 1.72–1.74 and deposition temperature (T_dep) of 908–1065 K as well as m_Ti/Ba = 1.95 and T_dep = 914–953 K. (0 2 0)-oriented BaTi₂O₅ films were obtained at m_Ti/Ba = 1.72–1.74 and T_dep = 989–1051 K. BaTi₂O₅ films had columnar grains, and the deposition rate reached 93 μm h^?1. The maximum relative permittivity of the (0 2 0)-oriented BaTi₂O₅ film prepared at T_dep = 989 K was 653 at 759 K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (0 2 0)-oriented BaTi₂O₅ films.     

Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density

Microwave plasma assisted synthesis of diamond is experimentally investigated using high purity, 2–5% CH₄/H₂ input gas chemistries and operating at high pressures of 180–240 Torr. A microwave cavity plasma reactor (MCPR) was specifically modified to be experimentally adjustable and to enable operation with high input microwave plasma absorbed power densities within the high-pressure regime. The modified reactor produced intense microwave discharges with variable absorbed power densities of 150–475 W/cm³ and allowed the control of the discharge position, size, and shape thereby enabling process optimization. Uniform polycrystalline diamond films were synthesized on 2.54 cm diameter silicon substrates at substrate temperatures of 950–1150 °C. Thick, freestanding diamond films were synthesized and optical measurements indicated that high, optical-quality diamond films were produced. The deposition rates varied between 3 and 21 μm/h and increased as the operating pressure and the methane concentrations increased and were two to three times higher than deposition rates achieved with the MCPR operating with equivalent input methane concentrations and at lower pressures (≤ 140 Torr) and power densities.     

Molecular structure of SiOx-incorporated diamond-like carbon films; evidence for phase segregation

Silicon-oxide incorporated amorphous hydrogenated diamond-like carbon films (SiO_x–DLC, 1 ≤ x ≤ 1.5) containing up to 24 at.% of Si (H is excluded from the atomic percentage calculations reported here) were prepared using pulsed direct current plasma-enhanced chemical vapour deposition (DC-PECVD). Molecular structure, optical properties and mechanical properties of these films were assessed as a function of Si concentration. The spectroscopic results indicated two structural regimes. First, for Si contents up to ~ 13 at.%, SiO_x–DLC is formed as a single phase with siloxane, O–Si–C₂, bonding networks. Second, for films with Si concentrations greater than 13 at.%, SiO_x–DLC with siloxane bonding and SiO_x deposit simultaneously as segregated phases. The variations in mechanical properties and optical properties as a function of Si content are consistent with the above changes in the film composition.     

Transparent and high infrared reflection film having sandwich structure of SiO2/Al:ZnO/SiO2

New transparent and high infrared reflection films having the sandwich structure of SiO₂/Al:ZnO(AZO)/SiO₂ were deposited on the soda-lime silicate glass at room temperature by radio frequency (R.F.) magnetron sputtering. The optical and electrical properties of SiO₂ (110 nm)/AZO (860 nm)/SiO₂ (110 nm) sandwich films were compared with those of single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. The results show that these sandwich films exhibit high transmittance of over 85% in the visible light range (380–760 nm), and low reflection rate of below 4.5% in the wavelength range of 350–525 nm, which is not shown in the conventional single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. Further these sandwich films display a low sheet resistance of 20 Ω/sq by sheet resistance formula and high infrared reflection rate of above 80% in the wavelength range of 15–25 μm. In addition, the infrared reflection property of these sandwich films is determined mainly by the AZO film. The outer SiO₂ film can diminish the interference coloring and increase transparency; the inner SiO₂ film improves the adhesion of the coating to the glass substrate and prevents Ca²⁺ and Na⁺ in the glass substrate from entering the AZO film.     

Low temperature processed SnO2 films using aqueous precursor solutions

We present a comparison study of the microstructure developments during aqueous solution deposition of SnO₂, particularly, through chemical bath deposition (CBD) and liquid phase deposition (LPD) at very low temperatures (40–75 °C). The effects of solution chemistry on the microstructural details and electrical properties of SnO₂ thin films are presented and discussed. Smooth, nanoparticulate SnO₂ films were obtained from supersaturated precursor solutions with lower precursor concentrations while more aggregated SnO₂ films were generated from higher precursor concentrations. Loosely-packed and porous structures were obtained from low supersaturation solutions with very low pHs. The deposition rates were also evaluated under various deposition conditions. XRD result shows that annealing process helps improve the degree of crystallinity of the as-deposited films that are composed of 3–10 nm nanocrystalline particles. One advantage of LPD of SnO₂ films is in-situ fluorine doping during deposition. The resulting electrical resistivity of F-doped SnO₂ films was about 18.7 Ω cm after the films were annealed at 450 °C.     

YBO3: Ce3+, Yb3+ based near-infrared quantum cutting phosphors: Synthesis and application to solar cells

Ce³⁺ and Yb³⁺ co-doped YBO₃ phosphors were facilely fabricated by a hydrothermal method. The investigations reveal that hexagonal YBO₃: Ce³⁺, Yb³⁺ nanoparticles aggregate to form cyclic structure after annealing at 900 °C. An efficient near-infrared (NIR) quantum cutting phenomenon involving the emission of two NIR photons (971 nm) for each ultraviolet (UV) photon (360 nm) absorbed is observed based on the cooperative energy transfer (CET) from Ce³⁺ to Yb³⁺ in YBO₃ with a CET efficiency of 41.9%. Moreover, YBO₃: Ce³⁺, Yb³⁺/SiO₂ films with anti-reflection and NIR quantum cutting abilities were prepared by dip-coating method. The as prepared composite films can convert UV photons into NIR photons between 950 nm and 1050 nm, which well matched with the spectral response of the silicon-based solar cell. The experimental results indicate that the photoelectric conversion efficiency of silicon solar cell can be effectively improved by assembling the YBO₃: Ce³⁺, Yb³⁺/SiO₂ bi-functional film, and the corresponding conversion efficiency is about 0.521% higher than the pure glass and 0.252% higher than the pure SiO₂ anti-reflection (AR) film. In a word, this work provides a simple strategy to develop optical films with AR and NIR quantum cutting abilities for solar energy conversion.