共查询到11条相似文献,搜索用时 62 毫秒
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本文报道了薄膜SIMOX/SOI材料上全耗尽MOSFET的制备情况,并对不同硅膜厚度和不同背面栅压下的器件特性进行了分析和比较.实验结果表明,全耗尽器件完全消除了"Kink"效应,低场电子迁移率典型值为620cm2/V·s,空穴迁移率为210cm2/V·s,泄漏电流低于10-12A;随着硅膜厚度的减簿,器件的驱动电流明显增加,亚阈值特性得到改善;全耗尽器件正、背栅之间有强烈的耦合作用,背表面状况可以对器件特性产生明显影响.该工作为以后薄膜全耗尽SIMOX/SOI电路的研制与分析奠定了基础. 相似文献
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The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeO1 n- MOSFETs is investigated on the basis of the density-gradient model in TCAD software. The effects of the channel thickness (Tch) and back-gate bias (Vbg) on the electrical characteristics of GeOI MOSFETs are examined, and the simulated results are compared with those using the conventional semi-classical model. It is shown that when T~h 〉 8 rim, the electron conduction path of the GeOI MOSFET is closer to the front-gate interface under the QC model than under the CL model, and vice versa when Tch 〈 8 rim. Thus the electrically controlled ability of the front gate of the devices is influenced by the quantum effect. In addition, the quantum-mechanical mechanism will enhance the drain-induced barrier lowering effect, increase the threshold voltage and decrease the on-state current; for a short channel length (≤ 30 nm), when Tch 〉 8 nm (or 〈 8 nm), the quantum-mechanical mechanism mainly impacts the subthreshold slope (or the threshold voltage). Due to the quantum-size effect, the off-state current can be suppressed as the channel thickness decreases. 相似文献
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The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium (Ge) channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect (SCE) and drain-induced barrier lowering (DIBL) effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and (5-9)×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved: on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV. 相似文献
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晶圆超薄磨片工艺是为减小功率开关管导通电阻,工艺中存在超薄晶圆磨片后转运过程中破片及超薄晶圆背面蒸镀金属等问题.现有的晶圆磨片的一般厚度为200μm,超薄磨片的目标是100μm.本研究采用同一批次晶圆,分批,2片超薄研磨,其他采用正常工艺减薄,封装测试条件相同.对比封装测试完毕的器件的导通电阻,超薄研磨器件的导通电阻减小约10%. 相似文献