大面积金刚石薄膜的均匀性

金刚石膜具有优异的电学、热学性质,均匀的大面积金刚石膜是其在电子领域工业化应用的前提。利用自行设计微波等离子体化学气相沉积装置在直径51 mm和76 mm硅片上制备金刚石薄膜。用扫描电子显微镜观察所得金刚石膜的表面形貌,用ZC36高阻仪测量金刚石薄膜的电阻率。通过电阻率和形貌的均匀性判断金刚石薄膜的均匀性。结果表明,基片位置的变化引起沉积温度和含碳基团的种类、浓度与原子氢浓度的改变,从而影响了金刚石薄膜的形核和生长过程,最终影响金刚石膜的均匀性。直径51 mm金刚石薄膜表面形貌比直径76 mm的薄膜更均匀,但两种尺寸金刚石膜中间和四周的电阻率数值都接近,达到108 Ω·cm,电阻率均匀性好。     

超疏水铜表面的电化学制备及其耐腐蚀性能

通过用电沉积法在铜片表面上生长了具有双尺寸粗糙度的铜膜,并用扫描电镜(SEM)、X射线能量色散谱(EDX)、X射线衍射仪(XRD)、接触角测量仪以及电化学工作站等对其进行详细表征。结果表明,所得铜表面是由纳米片组成的微米花组成。经硬脂酸修饰后,所得铜表面具有优异的超疏水性、不粘附性和耐腐蚀性能;与水的表面接触角高达167°,滚动角低至1.8°。超疏水性能归因于铜片表面上的微纳米结构以及低表面能的硬脂酸分子。     

电阻率法用于高性能混凝土养护程度的评价

提出了一种新的用于判断混凝土养护程度的电阻率法:采用内置铜电极和改进电阻率测量方法,选取自然养护、标准养护、水中养护3种典型的养护制度,通过不同深度的电阻率变化来反应混凝土内部的湿度梯度变化,进而反映混凝土养护状况.试验结果表明:混凝土的电阻率受养护条件的影响十分显著,通过距离表面不同深度处的电阻率差异能够很好反映混凝土的养护程度,不同养护制度主要影响距离表面1～3 cm处混凝土的电阻率.基于混凝土的电阻率,可以将养护质量划分为三个等级,即养护充分、养护一般和养护不良.对于粉煤灰高性能混凝土来说,28 d距离混凝土的表面2 cm处电阻率＜15 kΩ·cm为养护充分,15 kΩ·cm～100 kΩ·cm为养护一般,而＞100 kΩ·cm则养护不良.电阻率法可以有效应用于现场混凝土工程检测.     

处理工艺对纯镁表面植酸转化膜性能的影响

文章采用植酸水溶液对纯镁进行化学转化处理,通过SEM、EDS、电化学极化曲线法研究了温度、时间、浓度以及pH值对表面转化膜性能的影响.结果表明,转化膜的厚度和表面裂纹尺寸随着转化处理液浓度及处理时间的增加而增大,但时间过长或浓度过大均会导致转化膜的耐蚀性下降;溶液pH从1增大到5时,转化膜的裂纹尺寸呈现减小趋势,耐蚀性先增大后减小;转化膜表面裂纹尺寸随温度升高先增大后减小,温度在20℃～60℃之间,形成的转化膜耐蚀性较好,80℃和90℃时,形成的转化膜耐蚀性显著降低.     

硫化过程中FeS2薄膜组织结构和电学性能的变化

采用Fe膜热硫化法在673 K和773 K温度下形成了FeS2多晶薄膜.分析了不同硫化时间对晶体结构、化学成分、晶粒大小、电阻率和载流子浓度的影响.673 K下硫化超过20 h及773 K温度下硫化超过1 h,Fe膜生成FeS2比较充分.随硫化时间延长,673 K下硫化的薄膜晶粒直径基本保持在50 nm左右,但电阻率增大,载流子浓度下降.773 K下硫化的薄膜晶粒尺寸及电阻率均随硫化时间延长而明显增大,但载流子浓度变化不明显,通常低于1×1025m-3的水平.     

片状锌粉的可控钝化及电性能研究

采用水/酒精、双氧水溶液为氧化剂,制备了表面钝化Zn(OH)2的片状锌粉.采用X射线衍射(XRD)、热重分析(TG)、扫描电镜(SEM)对钝化锌粉进行了表征,考察了钝化增重对锌粉压片电阻率和漏电流密度的影响.结果表明,锌粉钝化后在表面形成鼓包状组织,随着氧化剂浓度和时间的增加,锌粉钝化增加;随着钝化膜的增厚,钝化锌粉的电阻率增加,漏电流密度减小.     

印刷电路板用导电胶的研究

在印刷电路板用铜导电胶中,铜粉表面氧化层的处理是关键,呋喃—环氧系列作胶粘剂,选用胺类处理剂最佳。本文研究了铜粉含量、处理剂含量、稀释剂以及固化温度对电阻率的影响。并且研制成体积电阻率约10~(-3)Ω·cm的铜导电胶,该种导电胶适合于制作印刷电路板,测试结果符合国家标准。     

铜和铜合金表面自组装缓蚀膜的研究进展

在铜和铜合金表面构建自组装膜是一种有效简单的防护方法.综述了近年来铜和铜合金表面自组装缓蚀膜的研究进程及存在的问题,并指出了有关铜和铜合金自组装缓蚀膜的发展方向.     

金属薄膜的电阻率温度系数

利用同时考虑表面散射和晶界散射的金属薄膜电导理论,得到金属薄膜的电阻率温度系数与厚度的关系式。金属Cu膜、Ag膜和Au膜的电阻率温度系数随膜厚变化的实验结果表明,计算曲线与实验结果符合较好,弥补了F－S理论在较薄厚度时与实验结果不相符的缺陷。分析得出,薄膜厚度较薄时马希森定律仍成立。     

浸泡时间对B10铜镍合金钼酸盐转化膜性能的影响

B10铜镍合金具有优异的耐蚀性能和力学性能,因此被广泛应用于海洋工程。但是,由于其服役环境复杂,B10铜镍合金易发生腐蚀而导致泄漏,造成不可挽回的损失。制备了B10铜镍合金表面防腐转化膜,以提高合金表面的耐蚀性能;进行了电化学阻抗、塔菲尔极化曲线(Tafel极化曲线)、扫描电镜与能谱分析,并通过X射线光电子谱(XPS)观察了转化膜的表面覆盖腐蚀产物。结果表明,当B10铜镍合金试样在含钼酸盐的溶液中浸泡120 min时,溶液转移电阻(R_ct)和膜电阻(R_p)达到峰值,且缓蚀率高达92.5%;转化膜中含有Cu和Ni的氧化物以及氢氧化物,Mo以+4价和+6价氧化物的形式存在于转化膜中。     

Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy

In the present study,anodic films on aluminium alloy was used as the dielectric layer for Cu thinfilm temperature sensor,and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer.Microstructure and surface morphologies of Cu film were investigated by optical microscope（OM）,atomic force microscope（AFM） and scanning electron microscope（SEM）.Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter.The results showed that the surface roughness of anodic films can be reduced from Ra 58.096 nm to Ra 16.335 nm by proper polishing.Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing.The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 12.48 mΩ·cm,5.48 mΩ·cm and 4.83 mΩ·cm,respectively.The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 946.5 Ω and 761.15 Ω respectively.The temperature coefficient of resistivity（TCR） of the sensor is 3479 × 10^{- 6} /℃.     

Growth,Characterization and Micro-pattern Fabrication of Iridium/Si3N4/Si（100） Thin Films

Iridium thin films have been deposited on Si3N4（100 nm）/Si（100） substrates by magnetron sputtering. And then iridium film micro-patterns were fabricated by ion milling technique. The atomic force microscopy （AFM） measurements reveal that there is a very fiat and smooth surface with an average roughness of 0.64 nm for the iridium films. The X-ray diffraction also reveals that the deposited iridium films have a polycrystalline microstructure with （111） plane preferential orientation. The electrical resistivity of the iridium films was also measured and discussed.     

溅射时间对CIGS薄膜的结构及性能影响

选择铜铟镓硒(CIGS)四元合金靶材,采用一步磁控溅射法在钠钙硅玻璃衬底上制备CIGS薄膜。重点研究了溅射时间对CIGS薄膜结构及性能的影响。采用XRD、SEM、UV-Vis及四探针测试仪对薄膜进行表征。结果表明,随着溅射时间的增加,薄膜增厚,薄膜的结晶度变好,颗粒增大尺寸约1mm,电阻率明显降低,可见光的吸收系数接近105 cm-1。CIGS吸收层的性能对改善CIGS薄膜光伏电池的光转换效率非常有利。     

Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe_2 thin films

1　INTRODUCTIONCuInSe2 based solar cells show their greatpromise with high conversion efficiency in commer cial applications[1]. But thus far the recorded effi ciency approaching 20% was achieved in laboratoryon the cells with small size using co evaporationdeposition technique which would face several chal lenges in volume production for large area solarcell. In order to realize the potential of CuInSe2(CIS) as photovoltaic material, it is important todeve…     

Preparation of ZAO film by low-temperature hydrothermal approach and its electrical property

Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.     

Characterization of Ti-Cu Films Deposited by HPPMS and Effect on NO Catalytic Release and Platelet Adhesion Behavior

Ti-Cu films with different Cu concentrations were fabricated by high-power pulsed magnetron sputtering(HPPMS) to release copper ions and catalyze NO to improve the blood compatibility. The Cu concentrations of films were 25.7 at% and 68.8 at%. Pure Ti films were also fabricated. Copper release, catalytic release of nitric oxide(NO), and blood platelet adhesion of Ti-Cu films were studied. Ti-Cu films released copper ions in PBS solution and more Cu ions were released from films with 68.8 at% Cu. Ti-Cu films had excellent ability of catalytical decomposition of exogenous donor S-nitroso-N-acetyl-DL-penicillamine(SNAP) and as a result, nitric oxide(NO) was generated. The NO generation catalyzed by Ti-Cu films was significantly higher than that by pure Ti films. This was more eminent in the Ti-Cu films with 68.8 at% Cu. The platelet adhesion and activation of Ti-Cu films were significantly inhibited compared to that of pure Ti films in the presence of SNAP. The Ti-Cu film fabricated by HPPMS showed the ability of releasing Cu ions to catalyze SNAP to generate NO to inhibit platelet adhesion and activation.     

Influence of deposition pressure on properties of ZnO: Al films fabricated by RF magnetron sputtering

Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10~(-4) Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

磁控溅射CdTe薄膜的光电学特性

采用射频磁控溅射方法在玻璃和Si(111)衬底上制备了碲化镉(CdTe)薄膜,并研究了溅射功率对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明,所有样品均沿(111)面择优取向; 平均晶粒尺寸随溅射功率的增加而增加,即从73.0 nm(70 W)增加到123.6 nm(110 W).紫外 - 可见 - 近红外光谱分析表明, CdTe薄膜在可见光范围内具有较高的吸光度; 薄膜的带隙随着溅射功率的增加而减小,最小值为1.38 eV.CdTe薄膜的导电性随溅射功率的增加而明显增强,当溅射功率为110 W时电阻率仅为21.5 Ω?cm.该研究结果可为制备高导电性和高吸收率的半导体薄膜提供参考.     

Effect of annealing on composition, structure and electrical properties of Au layers grown on different thickness Cr layers

110 nm-thick Au layers were sputter-deposited on unheated glasses coated about a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealed in a vacuum of 1 mPa at 300~C for 2, 5 and 30 min, respectively. Auger electron spectroscopy, X-ray diffraction and Field emission scanning electron microscopy were used to analyze the composition and structure of the Au layers. The resistivity of the bilayer films was measured by using four-point probe technique. The adhesion of the bilayer films to the substrate was tested using tape tests. The amount of Cr atoms diffusing into the Au layer increases with increasing the annealing time, resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. The content of Cr inside the Au layer grown on the thinner Cr layer is less than that grown on the thicker Cr layer. For the Au/Cr bilayer films, the lower resistivity and the good adhesion to the glass substrate can be obtained at a shorter annealing time for a thinner Cr layer.