共查询到19条相似文献,搜索用时 265 毫秒
1.
基于傅里叶分析的功率谱密度只能反映1/f噪声的整体频率特性,子波变换模极大值能够反映1/f噪声的奇异性和非规整性,而后者才是1/f噪声最本质的特征所在.本文将这一特性用于MOSFET 1/f噪声的相似性分析.从子波变换模极大值匹配原理出发,定义了一个1/f噪声的相似系数,利用它对不同形成机制、不同微观缺陷状态、不同偏置应力作用下的MOSFET 1/f噪声进行了相似性分析,发现它可作为鉴别1/f噪声的物理起源,分析1/f噪声的微观动力学机制,筛选有潜在缺陷或损伤的MOS器件的有效手段. 相似文献
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引言
MOSFET在模拟和射频电路中得到了广泛的应用.但是,MOSFET中的低频噪声,尤其是较高频率的1/f噪声,是模拟和射频电路应用中人们关注的重要因素.此外,随着器件特征尺寸的缩小,1/f噪声会大大增加[参考文献].因此,在测量1/f噪声时设计一套可靠的、重复性好的、精确的测量方法和系统是非常必要的. 相似文献
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光导探测器的噪声包括:热噪声、产生复合噪声和1/f噪声。其中热噪声和产生复合噪声取决于制备器件所用材料本身的一些基本参数(如:φ_v,τ,n_o等)。而影响1/f噪声的因素较多,诸如制备探测器时的表面工艺,材料参数,以及电极的结构形式等等,在一定的频率范围内(低频),1/f噪声与频率的倒数成正比。因而在使用器件时,选择合适的工作频率,尽量避开1/f噪声的影响,使器件尽可能地工作在产生复合噪声范围,这样 相似文献
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本文从表面载流子数涨落机构出发,对MOSFET的1/f噪声性质作了较全面的理论和实验研究。将MOSFET的表面1/f噪声理论推广到了所有的偏置区,包括沟道均匀区,线性区和饱和区。对MOSFET的等效输入噪声电压的频率特性、偏置特性和几何特性等进行了实验测试,结果表明与理论规律符合良好。 相似文献
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文章将相关积分方法用于MOSFET 1/f噪声分析,发现器件的1/f噪声与RTS叠加模型产生的1/f噪声相关积分极其相似.通过对MOSFET噪声物理模型的分析和讨论,证明n-MOSFET的1/f噪声以载流子数涨落模型为主,p-MOSFET的1/f噪声以迁移率涨落模型为主结论的正确性.研究表明,相关积分方法可用于鉴别电子器件测量噪声所属的模型类型. 相似文献
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基于深亚微米MOSFET的短沟道效应(迁移率退化、热载流子效应、体电荷效应、沟道长度调制效应等),提出了一种高频沟道噪声分析模型.该分析模型不仅具有较高的精确性,而且只包括MOSFET的工艺参数和电学参数,不含有微积分和拟合参数,较大地提高了MOSFET高频噪声模型的易用性.根据MOSFET的高频等效电路,得出了MOSFET的噪声系数模型.实验结果证明,提出的深亚微米MOSFET高频噪声模型的仿真结果与测试结果的平均误差不到0.4 dB,并与其他高频沟道噪声分析模型进行了比较. 相似文献
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一种敏感的MOSFET ESD潜在损伤检测方法 总被引:3,自引:3,他引:0
MOSFET ESD潜在损伤的有效检测一直是一个难以解决的问题.实验对比发现,MOSFET沟道电流的1/f噪声比传统的电参数更能敏感地反映栅氧化层中ESD潜在损伤的情况.在相同的静电应力条件下,1/f噪声的变化要比常规电参数敏感的多,其功率谱幅度的相对变化量比跨导的最大相对退化量大6倍以上,因此可以作为 MOSFET ESD潜在损伤的一种敏感的检测方法.在给出实验结果的同时,对这一敏感性的机理进行了较深入的分析. 相似文献
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《Electronics letters》2005,41(22):1208-1210
A statistical model for MOSFET 1/f noise implemented as an extension to BSIM and integrated into a process design kit is presented. Excellent model to hardware correlation is shown on measured noise statistics from over 200 devices. The statistical model enables circuit designers to run Monte Carlo and corner noise simulations, and captures the device area and bias dependence of noise variance. 相似文献
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This paper presents an analytical 1/f noise model of fully overlapped lightly doped drain MOSFET incorporating the voltage drop in the n- region due to the parasitic resistance. The FOLD structure has lesser noise effect than LDD MOSFET and the predicted results are verified with experimental data 相似文献
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The impact of post-oxidation annealing on the low-frequency noise, threshold voltage, and subthreshold swing of p-channel MOSFET is reported. The low-frequency noise is improved significantly with post-oxidation annealing and a modest V/sub T/ and S reduction is observed. Oxide traps are primarily extracted from measured noise. They are also extracted from threshold voltage and subthreshold slope shift. The contribution of oxide traps to threshold voltage shift and 1/f noise is analyzed through quantitative approach in the light of correlated fluctuation theory. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise, suggesting that experimental results are in agreement with mobility fluctuation theory whereas correlated number fluctuation theory explains the result assuming only a fraction of total oxide charge at a given energy level participates in the generation of low-frequency noise. 相似文献
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Low-frequency (1/f) noise in near-fully-depleted Thin-Film Silicon-On-Insulator (TFSOI) CMOS transistors designed for sub-l-V applications is investigated in the subthreshold region, linear region, and saturation region of operation for the first time. The noise in these surface-channel devices is composed of a bias invariant 1/f component and a bias dependent generation-recombination (G/R) component that becomes enhanced in the subthreshold region of operation for both n- and p-channel MOSFETs. Results presented in this letter are consistent with the noise being dominated by a number fluctuation model. These results demonstrate that the bias independent 1/f noise spectrum of the n-channel TFSOI MOSFET is comparable to the 1/f noise level found in conventional bulk silicon submicron CMOS fabrication processes 相似文献
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The paper gives the criteria to calculate the width of the front end transistor integrated next to the charge sensing electrode of CCDs or, in general, of semiconductor detectors, in order to reach the minimum noise in the readout of the signal charge. It accounts for white, series and parallel, and 1/f noise contributions. In addition, it points out two different design criteria depending whether a JFET or a MOSFET is used. The attention given to the JFET is due to a lower 1/f noise component, which makes these transistors more appealing as input devices in very high resolution detectors. The paper shows that there is a characteristic width of the FET gate that practically does not depend on the noise sources but depends only on the capacitance seen by the charge sensing electrode of the detector, making possible the optimum design of the transistor prior to knowledge of the real values of the spectral density of the noise sources, which are usually precisely known only at the end of the fabrication process. The paper shows that the pixel noise raises sharply as the transistor gate width departs from its optimum value 相似文献
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研究了DC应力n.MOSFET热载流子退化的Sfγ噪声参量.提出了用噪声参数和Sfγ表征高、中、低三种栅应力下n-MOSFET抗热载流子损伤能力的方法.进行了高、中、低三种栅压DC应力下热载流子退化实验.实验结果和本文模型符合较好. 相似文献
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Hamid N.H. Murray A.F. Roy S. 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(1):245-257
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Morf T. Brys C. Van Daele P. Demeester P. Benedickter H. Bachtold W. 《Electron Devices, IEEE Transactions on》1996,43(9):1489-1494
In this paper, we present the results of RF and noise measurements of MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and subsequently reattached to a new host substrate. In the experiments described here a 800 mm thick GaAs film containing MESFETs or complete microwave circuits is transplanted onto semi-insulating InP. Gate leakage current, RF characteristics, and noise performance of MESFETs and GaAs circuits are compared before and after ELO. Special attention was given to low-frequency (1/f) noise, 1/f noise is believed to be caused by surface as well as bulk effects. An increase in 1/f noise could have been predicted since a new surface is exposed during the transplantation process. The mechanical stress during the transplantation could cause crystal damage creating additional traps which could also result in an increase in 1/f noise 相似文献